Preliminary Characterization of an Active CMOS Pad Detector for Tracking and Dosimetry in HDR Brachytherapy
<p>(<b>a</b>) Detector top view: the detector is the light red square in the top-left corner. The CMOS preamplifiers are the pink areas on the right hand and bottom side of the chip; (<b>b</b>) Schematic representation of the diode structure and the external connections used to measured current-voltage characteristics.</p> "> Figure 2
<p>TIA and Probe circuit.</p> "> Figure 3
<p>Schematic of the sensor assembled on the probe and placed in the phantom along with the relative position of the Ir-192 catheter (diagram is not to scale).</p> "> Figure 4
<p>Probe assembled and placed above the PMMA phantom.</p> "> Figure 5
<p>(<b>a</b>) View of the sensor placed inside the vacuum chamber of the accelerator at ANSTO; the arrow describes the direction of the beam incident on the sample (<b>b</b>) beam view of the detector under the microscope.</p> "> Figure 6
<p>Current-Voltage characteristics of the samples fabricated on Wafer10; (<b>a</b>) for a biasing of the pixel (VPIX) with an offset of 1.202 V, (<b>b</b>) with an offset of 2.02 V. The solid lines represent the IV from the un-diced samples.</p> "> Figure 7
<p>(<b>a</b>) Wafer10 energy spectra; (<b>b</b>) Wafer20 energy spectra; (<b>c</b>) charge collection efficiency (CCE) as a function of the bias for W10 and W20 wafers with 100 and 48 micron substrate thicknesses, respectively. Error bars indicate one standard deviation from the mean value of the alpha peak energy.</p> "> Figure 7 Cont.
<p>(<b>a</b>) Wafer10 energy spectra; (<b>b</b>) Wafer20 energy spectra; (<b>c</b>) charge collection efficiency (CCE) as a function of the bias for W10 and W20 wafers with 100 and 48 micron substrate thicknesses, respectively. Error bars indicate one standard deviation from the mean value of the alpha peak energy.</p> "> Figure 8
<p>Direct comparison of charge collection map at −31 V (<b>a</b>) and microphotography of the layout of the sensor. The faint light red mark in (<b>b</b>) shows the actual sensitive area of the detector.</p> "> Figure 9
<p>Wafer10 Median Energy Maps; (<b>a</b>) −28 V, (<b>b</b>) −29 V, (<b>c</b>) −31 V and (<b>d</b>) −32 V. The coordinates in x and y are obtained using a calibration factor that converts the electric potentials applied to the steering magnets of the accelerator to a physical distance of the spot at the plane where the device under test is positioned, please refer to [<a href="#B39-sensors-24-00692" class="html-bibr">39</a>] for details on the calibration procedure adopted at ANSTO. The coordinate frames of the pictures are consistent between the figures but they can be obtained using a different offset, which results in a shift of the map relative to the axis.</p> "> Figure 10
<p>Median energy maps obtained at a bias of −29 V: (<b>a</b>) window set between 0 and 5 MeV; (<b>b</b>) when the window is set between 5–5.1 MeV, (<b>c</b>) between 5.1–5.235 MeV, (<b>d</b>) and between 5.235–5.80 MeV.</p> "> Figure 11
<p>Median energy map when the sensor is biased at −31 V; In the energy window between 0–5 MeV, no events are registered in the area of the sensor nor in the area dedicated to the electronics; (<b>a</b>) is the map of the events registered in the window from 5 to 5.235 MeV and (<b>b</b>) events between 5.235 and 5.60 MeV.</p> "> Figure 12
<p>Variation of the response as a function of the accumulated dose for a bias voltage of −31 V. The symbol in the plot contains the error bars calculated as 1 standard deviation; the red line represents the linear fit used to calculate the calibration factor.</p> "> Figure 13
<p>(<b>a</b>) data from source travelling at 2 mm depth with baseline subtracted, (<b>b</b>) transient of the source travelling 3 mm away from the detector.</p> "> Figure 14
<p>(<b>a</b>) Dose difference respective to TG-43. (<b>b</b>) Reconstructed distance of the source travelling along the catheter placed at 2 mm and (<b>c</b>) 7 mm above the source compared to the TPS nominal plan.</p> "> Figure 15
<p>(<b>a</b>) dwell time at different dwell positions at 2 mm depth, (<b>b</b>) transient time at different dwell position at 2 mm depth.</p> ">
Abstract
:1. Introduction
2. Materials and Methods
2.1. Detector Architecture
2.2. Active Pad Architecture and Probe Assembling
2.3. Phantom
2.4. Electrical Characterization
2.5. Charge Collection Imaging by Ion Beam Induced Charge (IBIC) Microscopy
2.6. Characterization of the Detector Response to an Ir-192 Gamma Source for HDR Brachytherapy
2.6.1. Source Localization and Tracking
2.6.2. Sensitivity
2.6.3. Depth Dose
3. Results
3.1. Charge Collection Mapping (IBIC)
3.2. Sensitivity and Calibration with Ir-192
3.3. High Dose Rate (HDR) Source Localization with Ir-192
4. Discussion and Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Dwell Time (s) | Dose (Gy) | Integral Response (nC) |
---|---|---|
3 | 0.54 ± 0.01 | 53.69 ± 1.00 |
6 | 1.09 ± 0.01 | 106.37 ± 1.04 |
12 | 2.18 ± 0.01 | 209.86 ± 1.21 |
18 | 3.27 ± 0.01 | 315.09 ± 1.48 |
29 | 5.26 ± 0.01 | 501.81 ± 2.02 |
Wafer | Sensitivity (nC Gy−1 mCi−1 mm−2) |
---|---|
W10 | (58 ± 0.21) × 10−3 |
W20 | (36 ± 1.4) × 10−3 |
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Bui, T.N.H.; Large, M.; Poder, J.; Bucci, J.; Bianco, E.; Giampaolo, R.A.; Rivetti, A.; Da Rocha Rolo, M.; Pastuovic, Z.; Corradino, T.; et al. Preliminary Characterization of an Active CMOS Pad Detector for Tracking and Dosimetry in HDR Brachytherapy. Sensors 2024, 24, 692. https://doi.org/10.3390/s24020692
Bui TNH, Large M, Poder J, Bucci J, Bianco E, Giampaolo RA, Rivetti A, Da Rocha Rolo M, Pastuovic Z, Corradino T, et al. Preliminary Characterization of an Active CMOS Pad Detector for Tracking and Dosimetry in HDR Brachytherapy. Sensors. 2024; 24(2):692. https://doi.org/10.3390/s24020692
Chicago/Turabian StyleBui, Thi Ngoc Hang, Matthew Large, Joel Poder, Joseph Bucci, Edoardo Bianco, Raffaele Aaron Giampaolo, Angelo Rivetti, Manuel Da Rocha Rolo, Zeljko Pastuovic, Thomas Corradino, and et al. 2024. "Preliminary Characterization of an Active CMOS Pad Detector for Tracking and Dosimetry in HDR Brachytherapy" Sensors 24, no. 2: 692. https://doi.org/10.3390/s24020692