ABSTRACT Two sets of pin-diodes with epitaxially grown anode regions and implanted anode regions, respectively, were processed on the same low-doped n-type epitaxial layer. The designed breakdown voltage for the epitaxial layer was 5 kV with punch-through at about 2 kV. The almost ideal forward voltage drop of less than 3.5 V at current densities of 100 A cm(-2) of the epitaxial diodes indicates high-level carrier injection into the low-doped epitaxial layer, which is also supported by the results of reverse recovery measurements. At current densities above 10 A cm(-2) the forward voltage drop of the implanted pin-diodes is significantly higher than that of the epitaxial diodes.
