Resistively detected NMR as a probe of the topological nature of conducting edge/surface states

Z Zhuang, VF Mitrović, JB Marston - Physical Review B, 2021 - APS
Physical Review B, 2021APS
Electron spins in edge or surface modes of topological insulators (TIs) with strong spin-orbit
coupling cannot be directly manipulated with microwaves due to the locking of electron spin
to its momentum. We show by contrast that a resistively detected nuclear magnetic
resonance (RDNMR) based technique can be used to probe the helical nature of surface
conducting states. In such experiments, one applies a radio frequency (RF) field to reorient
nuclear spins that then couple to electronic spins by the hyperfine interaction. The spin of the …
Electron spins in edge or surface modes of topological insulators (TIs) with strong spin-orbit coupling cannot be directly manipulated with microwaves due to the locking of electron spin to its momentum. We show by contrast that a resistively detected nuclear magnetic resonance (RDNMR) based technique can be used to probe the helical nature of surface conducting states. In such experiments, one applies a radio frequency (RF) field to reorient nuclear spins that then couple to electronic spins by the hyperfine interaction. The spin of the boundary electrons can thereby be modulated, resulting in changes in conductance at nuclear resonance frequencies. Here, we demonstrate that the conductivity is sensitive to the direction of the applied magnetic field with respect to the helicity of the electrons. This dependence of the RDNMR signal on angle probes the nature of the conductive edge or surface states. In the case of 3D TI in the quantum Hall regime, we establish that the dominant mechanism responsible for the conductance change in a RDNMR experiment is based on the Overhauser field effect. Our findings indicate that the same physics underlying the use of RDNMR to probe TI states also enables us to use RF control of nuclear spins to coherently manipulate topologically protected states, which could be useful for a new generation of devices.
American Physical Society