Thermal boundary resistance measurement and analysis across SiC/SiO2 interface
Silicon Carbide (SiC) is a typical material for third-generation semiconductors. The thermal
boundary resistance (TBR) of the 4H-SiC/SiO 2 interface was investigated by both
experimental measurements and theoretical calculations. The structure of 4H-SiC/SiO 2 was
characterized by using transmission electron microscopy and X-ray diffraction. The TBR was
found to be 8.11× 10− 8 m 2 K/W at 298 K by the 3ω method. Furthermore, the diffuse
mismatch model was employed to predict the TBR of different interfaces, which is in good …
boundary resistance (TBR) of the 4H-SiC/SiO 2 interface was investigated by both
experimental measurements and theoretical calculations. The structure of 4H-SiC/SiO 2 was
characterized by using transmission electron microscopy and X-ray diffraction. The TBR was
found to be 8.11× 10− 8 m 2 K/W at 298 K by the 3ω method. Furthermore, the diffuse
mismatch model was employed to predict the TBR of different interfaces, which is in good …