An easy-to-use mismatch model for the MOS transistor
JA Croon, M Rosmeulen, S Decoutere… - IEEE Journal of Solid …, 2002 - ieeexplore.ieee.org
JA Croon, M Rosmeulen, S Decoutere, W Sansen, HE Maes
IEEE Journal of Solid-State Circuits, 2002•ieeexplore.ieee.orgIn this paper, a physics-based mismatch model is presented. It is demonstrated on a 0.18-
/spl mu/m technology that a simple mismatch model can still be used to characterize deep-
submicron technologies. The accuracy of the model is examined and found to be within 20%
in the strong inversion region. Bulk bias dependence is modeled in a physical way. To
extract the mismatch parameters, a weighted fit is introduced. It is shown that the width and
length dependence of the mismatch parameters is given by the Pelgrom model.
/spl mu/m technology that a simple mismatch model can still be used to characterize deep-
submicron technologies. The accuracy of the model is examined and found to be within 20%
in the strong inversion region. Bulk bias dependence is modeled in a physical way. To
extract the mismatch parameters, a weighted fit is introduced. It is shown that the width and
length dependence of the mismatch parameters is given by the Pelgrom model.
In this paper, a physics-based mismatch model is presented. It is demonstrated on a 0.18-/spl mu/m technology that a simple mismatch model can still be used to characterize deep-submicron technologies. The accuracy of the model is examined and found to be within 20% in the strong inversion region. Bulk bias dependence is modeled in a physical way. To extract the mismatch parameters, a weighted fit is introduced. It is shown that the width and length dependence of the mismatch parameters is given by the Pelgrom model.
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