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Nanjo et al., 2013 - Google Patents

AlGaN channel HEMT with extremely high breakdown voltage

Nanjo et al., 2013

Document ID
8230524298123720254
Author
Nanjo T
Imai A
Suzuki Y
Abe Y
Oishi T
Suita M
Yagyu E
Tokuda Y
Publication year
Publication venue
IEEE transactions on electron devices

External Links

Snippet

Enhanced performance of RF power modules is required in a next-generation information society. To satisfy these requirements, we designed a novel high-electron mobility transistor (HEMT) structure employing wider bandgap AlGaN for a channel layer, which we called …
Continue reading at ieeexplore.ieee.org (other versions)

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