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Tadjer et al., 2010 - Google Patents

On the high curvature coefficient rectifying behavior of nanocrystalline diamond heterojunctions to 4H-SiC

Tadjer et al., 2010

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Document ID
597681749611138500
Author
Tadjer M
Feygelson T
Hobart K
Caldwell J
Anderson T
Butler J
Eddy C
Gaskill D
Lew K
VanMil B
Myers-Ward R
Kub F
Sollenberger G
Brillson L
Publication year
Publication venue
Applied Physics Letters

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Snippet

Heterojunctions of p+ B-doped nanocrystalline diamond (NCD) to n− 4H-SiC were studied by electrical and cathodoluminescence (CL) methods. Current rectification at 30 C had a curvature coefficient γ 0 of 42.1 V− 1 at zero bias, γ max of 105.35 V− 1 at 0.2 V, and a …
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    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1602—Diamond
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    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
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    • H01L29/16—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
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    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
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    • H01L29/36—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H01L29/365—Planar doping, e.g. atomic-plane doping, delta-doping
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    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
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