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Su et al., 2000 - Google Patents

Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature

Su et al., 2000

Document ID
3413161549006521216
Author
Su Y
Chang J
Lu Y
Lin C
Wu K
Wu Z
Publication year
Publication venue
IEEE electron device letters

External Links

Snippet

We demonstrate a novel Al/sub 0.66/In/sub 0.34/As/sub 0.85/Sb/sub 0.15/-In/sub 0.53/Ga/sub 0.47/As double-barrier resonant tunneling diode grown by metalorganic vapor phase epitaxy. A high peak-to-valley current ratio of 46 and a peak current density of 22 …
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