[go: up one dir, main page]

Adler et al., 1982 - Google Patents

Theoretical basis for field calculations on multi-dimensional reverse biased semiconductor devices

Adler et al., 1982

View PDF
Document ID
1928335591106408232
Author
Adler M
Temple V
Rustay R
Publication year
Publication venue
Solid-State Electronics

External Links

Snippet

In this report the theory and the computational methods used to perform numerical field calculations on reverse biased two-dimensional (or three-dimensional with circular symmetry) structures are fully described and completely justified. Finite difference methods …
Continue reading at www.academia.edu (PDF) (other versions)

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers
    • G06G7/20—Arrangements for performing computing operations, e.g. operational amplifiers for evaluating powers, roots, polynomes, mean square values, standard deviation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Similar Documents

Publication Publication Date Title
Adler et al. Theoretical basis for field calculations on multi-dimensional reverse biased semiconductor devices
US2997604A (en) Semiconductive device and method of operating same
Reiser A two-dimensional numerical FET model for DC, AC, and large-signal analysis
Buturla et al. Finite-element analysis of semiconductor devices: The FIELDAY program
Wada et al. Physical basis of short-channel MESFET operation
Slotboom Iterative scheme for 1-and 2-dimensional dc-transistor simulation
Yoshii et al. A three-dimensional analysis of semiconductor devices
Barnes et al. Finite-element methods in semiconductor device simulation
Joyce et al. Steady‐state junction‐current distributions in thin resistive films on semiconductor junctions (solutions of▿ 2 v=±ev)
Hamilton et al. Comparison of large signal models for junction transistors
Jourdana et al. Three-species drift-diffusion models for memristors
Kennedy et al. On the mathematical theory of the linearly-graded pn junction
Edmonds Extension of the ADC charge-collection model to include multiple junctions
Hamel et al. The general transient charge control relation: A new charge control relation for semiconductor devices
Machek et al. A novel finite-element approach to device modeling
US3683417A (en) Apparatus and machine-implemented process for determining the terminal characteristics of a bipolar transistor
Yamaguchi A time-dependent and two-dimensional numerical model for MOSFET device operation
Jones et al. Heterostructure barrier varactor simulation using an integrated hydrodynamic device/harmonic-balance circuit analysis technique
Reiser On the stability of finite difference schemes in transient semiconductor problems
Chang The Conduction‐Diffusion Theory of Semiconductor Junctions
Graham Jr et al. Effects of base doping and width on the J V characteristics of the n+− n− p+ structure
Hanihara et al. Efficient dc and ac analysis of I 2 L devices based on quasi-three-dimensional modeling
Pinto et al. Simulation of multiply connected current-voltage characteristics in charge injection transistors
Gruber et al. Can classical statistical mechanics describe an infinite crystal?
Schroder et al. Physically based models of high power semiconductor devices for PSpice