[go: up one dir, main page]

Tong, 1983 - Google Patents

AC model for MOS transistors from transient-current computations

Tong, 1983

Document ID
17906701819961256953
Author
Tong K
Publication year
Publication venue
IEE Proceedings I (Solid-State and Electron Devices)

External Links

Snippet

It is shown how the terminal transient currents in an MOS transistor can be computed from analytical expressions together with the DC model under quasistatic conditions. The channel drift current is solved assuming that the increase in channel charges is supplied …
Continue reading at digital-library.theiet.org (other versions)

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING; COUNTING
    • G06F—ELECTRICAL DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/50—Computer-aided design
    • G06F17/5009—Computer-aided design using simulation
    • G06F17/5036—Computer-aided design using simulation for analog modelling, e.g. for circuits, spice programme, direct methods, relaxation methods
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Similar Documents

Publication Publication Date Title
Toh et al. An engineering model for short-channel MOS devices
Scott et al. An accurate model for power DMOSFETs including interelectrode capacitances
Budihardjo et al. The lumped-charge power MOSFET model, including parameter extraction
US5761082A (en) Method for manufacturing an integrated circuit
Chen et al. A capacitance model for GaAs MESFET's
Sanchez et al. Understanding threshold voltage in undoped-body MOSFETs: An appraisal of various criteria
Sheu et al. An MOS transistor charge model for VLSI design
Sheu et al. Measurement and modeling of short-channel MOS transistor gate capacitances
Tong AC model for MOS transistors from transient-current computations
Park et al. A nonquasi-static MOSFET model for SPICE-transient analysis
Budihardjo et al. A power MOSFET model based on a lumped-charge approach
Van der Tol et al. Buried-channel MOSFET model for SPICE
Sansen et al. A simple model of ion-implanted JFETs valid in both the quadratic and the subthreshold regions
Nawaz et al. A new charge conserving capacitance model for GaAs MESFET's
Hartgring et al. A MESFET model for circuit analysis
D'Halleweyn et al. Charge model for SOI LDMOST with lateral doping gradient
Kang et al. Parametric expression of subthreshold slope using threshold voltage parameters for MOSFET statistical modeling
Smedes et al. Influence of channel series resistances on dynamic MOSFET behaviour
Coyitangiye et al. Compact Modeling of MOSFET with VHDL-AMS language
Subramanian et al. Two lumped-charge based power MOSFET models
Alam Gate capacitances of high electron mobility transistors
Afzali-Kushaa et al. Modelling the MOS transistor
Cho et al. A new deep submicron compact physical model for analog circuits
Kushaa et al. A CAD model for MOS transistors valid in all regions of operation
Wong et al. A new empirical RF model for deep-submicron MOSFET's device