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Kim et al., 2022 - Google Patents

High mobility p-channel tin monoxide thin-film transistors with hysteresis-free like behavior

Kim et al., 2022

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Document ID
16578434633259260052
Author
Kim T
Lee H
Kim S
Kim J
Jeong J
Publication year
Publication venue
Applied Physics Letters

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Snippet

In this Letter, we report a demonstration of p-channel tin monoxide (SnO) thin-film transistors (TFTs) with high field-effect mobility (μ FE) exceeding 10 cm 2/Vs and hysteresis-free like behavior. We demonstrate that maintaining metallic states before encapsulation is a key …
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