[go: up one dir, main page]

Vidalko et al., 1986 - Google Patents

Mobility of majority carriers in γ‐irradiated oxygen‐containing crystals of n‐Si and n‐Ge

Vidalko et al., 1986

View PDF
Document ID
15656607789734208943
Author
Vidalko E
Gaidar G
Girii V
Savyak V
Shakhovtsov V
Publication year
Publication venue
physica status solidi (a)

External Links

Snippet

The effect of small doses of γ‐radiation from 60Co on concentration and mobility of majority carriers in n‐type Si and Ge is investigated. In the oxygen‐containing samples, the mobility is shown to grow anomalously with irradiation dose in the region of combined scattering. A …
Continue reading at onlinelibrary.wiley.com (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Similar Documents

Publication Publication Date Title
US5145794A (en) Formation of shallow junction by implantation of dopant into partially crystalline disordered region
Williams et al. Substitutional solid solubility limits during solid phase epitaxy of ion implanted (100) silicon
US4135951A (en) Annealing method to increase minority carrier life-time for neutron transmutation doped semiconductor materials
US3076732A (en) Uniform n-type silicon
Coates et al. Tunnel assisted hopping in neutron irradiated gallium arsenide
Edmond The Behaviour of Some Impurities in III-V Compounds
Vidalko et al. Mobility of majority carriers in γ‐irradiated oxygen‐containing crystals of n‐Si and n‐Ge
Willardson Transport properties in silicon and gallium arsenide
Blomberg et al. Substrate heating effects in CO2 laser annealing of ion‐implanted silicon
Elliman et al. Kinetics, Microstructure And Mechanisms of Ion Beam Induced Epitaxial Crystallization of Semiconductors.
JPS62202528A (en) Manufacture of semiconductor substrate
Shlimak et al. On the doping of isotopically controlled germanium by nuclear transmutation with a high concentration of shallow donor impurities
Kringho/j et al. Rapid thermal annealing of Ge‐implanted InP
Dixon et al. Effect of Heat Treatment upon the Electrical Properties of Indium Arsenide
Kazakevich et al. The effect of dislocations on the formation of radiation defects in silicon
US4277307A (en) Method of restoring Si crystal lattice order after neutron irradiation
EP0423463A1 (en) Annealing method for II-VI semiconductors
Nedeoglo et al. The effect of thermal treatment and doping on the electrical properties of zinc selenide
Darken et al. Photoconductive response of compensating impurities in photothermal ionization spectroscopy of high‐purity silicon and germanium
Milazzo et al. Ex-situ doping of epitaxially grown Ge on Si by ion-implantation and pulsed laser melting
Rohr et al. Gold and platinum accumulation on buried defects in silicon
Holland et al. Optimized conditions for the formation of buried insulating layers in Si by high dose implantation of oxygen
JPH03159118A (en) Method for thermally treating single-crystal gallium arsenide wafer
Gerasimov et al. The Annealing of Radiation- Induced Defects in Germanium, Irradiated with Fast Electrons at 77 deg K, at the 220 deg K Stage
Large Ion implantation: A new method of doping semiconductors—II