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Thandavan et al., 2015 - Google Patents

Evaluation of Williamson–Hall strain and stress distribution in ZnO nanowires prepared using aliphatic alcohol

Thandavan et al., 2015

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Document ID
13410085506742350115
Author
Thandavan T
Gani S
Wong C
Nor R
Publication year
Publication venue
Journal of Nondestructive Evaluation

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Snippet

Abstract Synthesis of ZnO nanowires (NWs) using vapor phase transport (VPT) assisted with thermal evaporation of brass (CuZn) assisted by hotwire was presented. The effects of aliphatic alcohols such as methanol and ethanol as source of oxygen were investigated …
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Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers

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