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Yang et al., 1995 - Google Patents

Prevention of base dopant out-diffusion using a heterostructure-emitter in GaInP/GaAs heterojunction bipolar transistors

Yang et al., 1995

Document ID
12994265536986201920
Author
Yang Y
Hsu C
Yang E
Publication year
Publication venue
Semiconductor science and technology

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Abstract Zinc-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) grown by MOCVD were fabricated. Characteristics of HBTs with an undoped spacer layer and an n- type GaAs set-back layer (heterostructure-emitter) between base and emitter were …
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