[go: up one dir, main page]

Zeng et al., 2024 - Google Patents

Approaching the Ideal Linearity in Epitaxial Crystalline‐Type Memristor by Controlling Filament Growth

Zeng et al., 2024

View PDF
Document ID
12765622166369579573
Author
Zeng T
Shi S
Hu K
Jia L
Li B
Sun K
Su H
Gu Y
Xu X
Song D
Yan X
Chen J
Publication year
Publication venue
Advanced Materials

External Links

Snippet

Brain‐inspired neuromorphic computing has attracted widespread attention owing to its ability to perform parallel and energy‐efficient computation. However, the synaptic weight of amorphous/polycrystalline oxide based memristor usually exhibits large nonlinear behavior …
Continue reading at advanced.onlinelibrary.wiley.com (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/12—Details
    • H01L45/122—Device geometry
    • H01L45/1233—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/14—Selection of switching materials
    • H01L45/145—Oxides or nitrides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
    • H01L45/16—Manufacturing
    • H01L45/1608—Formation of the switching material, e.g. layer deposition
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00 using resistance random access memory [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00 using optical elements using other beam accessed elements, e.g. electron, ion beam

Similar Documents

Publication Publication Date Title
Zeng et al. Approaching the Ideal Linearity in Epitaxial Crystalline‐Type Memristor by Controlling Filament Growth
Choi et al. SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations
Ge et al. A ferrite synaptic transistor with topotactic transformation
Yan et al. Self‐assembled networked PbS distribution quantum dots for resistive switching and artificial synapse performance boost of memristors
Lee et al. On‐demand reconfiguration of nanomaterials: when electronics meets ionics
Nikam et al. Controlled ionic tunneling in lithium nanoionic synaptic transistor through atomically thin graphene layer for neuromorphic computing
Guo et al. Control of synaptic plasticity learning of ferroelectric tunnel memristor by nanoscale interface engineering
Lin et al. Adaptive synaptic memory via lithium ion modulation in RRAM devices
Miao et al. Continuous electrical tuning of the chemical composition of TaO x-based memristors
Ismail et al. Mimicking biological synapses with a-HfSiOx-based memristor: implications for artificial intelligence and memory applications
Kim et al. Reliable multistate data storage with low power consumption by selective oxidation of pyramid-structured resistive memory
Lee et al. Reliable multivalued conductance states in tao x memristors through oxygen plasma-assisted electrode deposition with in situ-biased conductance state transmission electron microscopy analysis
Kapur et al. Back‐End‐of‐Line SiC‐Based Memristor for Resistive Memory and Artificial Synapse
Guo et al. High-performance neuromorphic computing and logic operation based on a self-assembled vertically aligned nanocomposite SrTiO3: MgO film memristor
Lee et al. Sputtering-deposited amorphous SrVOx-based memristor for use in neuromorphic computing
Ismail et al. Robust resistive switching constancy and quantum conductance in high-k dielectric-based memristor for neuromorphic engineering
Lahteenlahti et al. Electron Doping Effect in the Resistive Switching Properties of Al/Gd1–x Ca x MnO3/Au Memristor Devices
Chee et al. Frequency-dependent synapse weight tuning in 1S1R with a short-term plasticity TiO x-based exponential selector
Kumar et al. Site‐Specific Regulated Memristors via Electron‐Beam‐Induced Functionalization of HfO2
Nikam et al. On-chip integrated atomically thin 2D material heater as a training accelerator for an electrochemical random-access memory synapse for neuromorphic computing application
Hadiyal et al. Bio-inspired artificial synapse for neuromorphic computing based on NiO nanoparticle thin film
Kundale et al. Multilevel Conductance States of Vapor‐Transport‐Deposited Sb2S3 Memristors Achieved via Electrical and Optical Modulation
Gawai et al. Oxygen vacancies controlled highly stable bilayer analog synapse used for neuromorphic computing systems
Bou et al. Kinetics of volatile and nonvolatile halide perovskite devices: The conductance-activated quasi-linear memristor (CALM) Model
Yu et al. MoTe2-based low energy consumption artificial synapse for neuromorphic behavior and decimal arithmetic