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Li et al., 2012 - Google Patents

Top-down silicon nanowire-based thermoelectric generator: design and characterization

Li et al., 2012

Document ID
12411422067092777835
Author
Li Y
Buddharaju K
Singh N
Lee S
Publication year
Publication venue
Journal of electronic materials

External Links

Snippet

A silicon nanowire (SiNW) array-based thermoelectric generator (TEG) was assembled and characterized. The SiNW array had pitch of 400 nm, and SiNW diameter and height of< 100 nm and~ 1 μ m, respectively. The SiNW array was formed using a top-down approach: deep …
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    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
    • H01L35/32—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermo-couple forming the device including details about, e.g., housing, insulation, geometry, module
    • H01L35/325—Cascades of thermo-couples
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    • H01L35/12—Selection of the material for the legs of the junction
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    • H01L35/18—Selection of the material for the legs of the junction using inorganic compositions comprising arsenic or antimony or bismuth, e.g. AIIIBV compounds
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