Burton et al., 1993 - Google Patents

Classifications

• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
  • G02B6/00—Light guides
  • G02B6/10—Light guides of the optical waveguide type
  • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
  • G02B6/122—Light guides of the optical waveguide type of the integrated circuit kind basic optical elements, e.g. light-guiding paths
  • G02B6/1221—Light guides of the optical waveguide type of the integrated circuit kind basic optical elements, e.g. light-guiding paths made from organic materials
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
  • G02B6/00—Light guides
  • G02B6/10—Light guides of the optical waveguide type
  • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
  • G02B6/122—Light guides of the optical waveguide type of the integrated circuit kind basic optical elements, e.g. light-guiding paths
  • G02B6/125—Bends, branchings or intersections
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
  • G02B6/00—Light guides
  • G02B6/10—Light guides of the optical waveguide type
  • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
  • G02B2006/12083—Constructional arrangements
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
  • G02B6/00—Light guides
  • G02B6/24—Coupling light guides
  • G02B6/26—Optical coupling means
  • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
  • G02B6/2804—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
  • G02B6/00—Light guides
  • G02B6/10—Light guides of the optical waveguide type
  • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
  • G02B2006/12166—Manufacturing methods
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
  • G02B6/00—Light guides
  • G02B6/10—Light guides of the optical waveguide type
  • G02B6/12—Light guides of the optical waveguide type of the integrated circuit kind
  • G02B6/12004—Combinations of two or more optical elements
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
  • G02B6/00—Light guides
  • G02B6/24—Coupling light guides
  • G02B6/42—Coupling light guides with opto-electronic elements
  • G02B6/4201—Packages, e.g. shape, construction, internal or external details
  • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
  • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. alGaAs-laser, InP-based laser
  • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. alGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
  • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers)
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers)
  • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
  • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
• • G—PHYSICS
  • G02—OPTICS
  • G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
  • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
  • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
  • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
• • H—ELECTRICITY
  • H01—BASIC ELECTRIC ELEMENTS
  • H01S—DEVICES USING STIMULATED EMISSION
  • H01S5/00—Semiconductor lasers
  • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
  • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
  • H01S5/4031—Edge-emitting structures
  • H01S5/4043—Edge-emitting structures with vertically stacked active layers
• • G—PHYSICS
  • G02—OPTICS
  • G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
  • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
  • G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
  • G02F1/31—Digital deflection, i.e. optical switching
  • G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
  • G02F1/3137—Digital deflection, i.e. optical switching in an optical waveguide structure with intersecting or branching waveguides, e.g. X-switches and Y-junctions

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