[go: up one dir, main page]

WO2020048311A1 - 一种化学机械平坦化设备和晶圆传输方法、晶圆平坦化单元 - Google Patents

一种化学机械平坦化设备和晶圆传输方法、晶圆平坦化单元 Download PDF

Info

Publication number
WO2020048311A1
WO2020048311A1 PCT/CN2019/101581 CN2019101581W WO2020048311A1 WO 2020048311 A1 WO2020048311 A1 WO 2020048311A1 CN 2019101581 W CN2019101581 W CN 2019101581W WO 2020048311 A1 WO2020048311 A1 WO 2020048311A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
wafer
transfer
loading
cleaning
Prior art date
Application number
PCT/CN2019/101581
Other languages
English (en)
French (fr)
Inventor
李苍
顾静然
朱铭
杨思远
Original Assignee
杭州众硅电子科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201811043848.7A external-priority patent/CN109015314A/zh
Priority claimed from CN201811466539.0A external-priority patent/CN109262444A/zh
Application filed by 杭州众硅电子科技有限公司 filed Critical 杭州众硅电子科技有限公司
Priority to KR1020217010344A priority Critical patent/KR102533567B1/ko
Priority to SG11202103477TA priority patent/SG11202103477TA/en
Priority to US17/274,183 priority patent/US12251785B2/en
Publication of WO2020048311A1 publication Critical patent/WO2020048311A1/zh

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B24B37/345—Feeding, loading or unloading work specially adapted to lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance

Definitions

  • the present invention relates to the technical field of semiconductor equipment, and in particular, to a chemical mechanical planarization device, a wafer transfer method, and a wafer planarization unit.
  • Chemical mechanical planarization (Chemical Mechanical Planarization, CMP) technology is a combination of chemical and mechanical effects. Its working principle is: first, the surface material of the workpiece chemically reacts with the oxidant and catalyst in the polishing liquid to form a soft layer that is relatively easy to remove, and then the softness of the abrasive in the polishing liquid and the polishing pad removes the soft layer. The surface layer of the workpiece is exposed again, and then a chemical reaction is performed to complete the polishing of the surface of the workpiece in the alternating process of chemical and mechanical processes.
  • Chemical mechanical planarization technology has been developed into a combination of online measurement, online endpoint detection, cleaning and other technologies.
  • Chemical mechanical planarization technology is the development of integrated circuits toward miniaturization, multilayering, thinning, and planarization.
  • the product is also a process technology necessary for the wafer to transition from 200mm to 300mm or even larger diameter, improve productivity, reduce manufacturing costs, and globally planarize the substrate.
  • a typical chemical mechanical planarization equipment usually includes multiple polishing units and auxiliary devices such as cleaning, wafer transport, and drying.
  • the polishing unit usually includes a table, a polishing disk, a polishing head, a polishing arm, a dresser, a polishing liquid arm, etc.
  • the polishing disk, a polishing head, a polishing arm, a dresser, and a polishing liquid arm are arranged on the table according to the processing position.
  • the spatial arrangement of the polishing unit and modules such as cleaning and wafer transportation has a great impact on the overall polishing throughput of the chemical mechanical planarization equipment.
  • the transfer of wafers between the polishing unit and the outside and between the polishing unit is usually achieved by a polishing loading table or a device that plays a similar role.
  • a polishing loading table or a device that plays a similar role Regarding the spatial layout of the polishing loading table and the polishing unit, the industry has already matured models, such as patents In the technical solution disclosed in US Patent No. US5738574, the polishing loading station and the three polishing units are arranged in a square shape. During work, a carousel with four square-shaped polishing heads and a rotatable device (carousel) is moved downward, and the wafer loading and unloading are completed in turn with the polishing loading table.
  • the three polishing units are provided with a cleaning device, which is located adjacent to the polishing unit, and one of them is located between the corresponding polishing unit and the polishing loading table.
  • a polishing loading table needs to provide loading and unloading services for three polishing units by a common rotatable device, the disadvantage of this technical layout is that the process is complicated.
  • Another US patent US8795032B2 discloses another layout, in which four polishing units are arranged side by side, and wafer transfer is completed by a loading and unloading area at the end of the planarization device and two linear transport mechanisms arranged along the arrangement direction of the polishing unit. The other side of the linear transport mechanism is a cleaning area.
  • Each of the above-mentioned linear transport mechanisms provides services for two polishing units, and sets two transfer stations for each polishing unit.
  • the polishing head of the polishing unit can load and unload wafers from one of the transfer stations.
  • This layout uses a linear arrangement of polishing units, but its disadvantage is that although each polishing unit is provided with two transfer stations, the polishing unit directly loads and unloads wafers from only one of them during the polishing process, so from the perspective of wafer transfer efficiency There is still room for improvement.
  • Chemical mechanical planarization equipment typically includes a semiconductor equipment front-end module (EFEM), a cleaning module, and a polishing module.
  • EFEM mainly includes cassettes, wafer transfer robots, and air purification systems for storing wafers
  • cleaning modules mainly include megasonic cleaning parts of varying numbers, roller cleaning parts, drying parts, and devices for transferring wafers between parts, etc.
  • the polishing module includes a varying number of polishing units, and each polishing unit mainly includes a polishing table, a polishing head, a polishing liquid supply system, and a polishing pad dressing system.
  • a wet wafer transfer robot that can transfer wet wafers is usually installed between the cleaning module and the polishing module.
  • the typical path of a wafer in a chemical mechanical planarization device is as follows.
  • the wafer to be polished in the cassette is placed on a polishing turntable by a wafer transfer robot in EFEM.
  • the wet wafer transfer robot transfers the wafer to be polished to polishing.
  • the wafer is transferred to the cleaning module by a wet wafer transfer robot.
  • the wafer In the general chemical mechanical planarization process, the wafer is transferred between various regions.
  • the wafer transfer from the polishing turntable to the polishing module of the polishing module requires the transfer robot and wet wafer transfer robot to work together. From the perspective of transmission efficiency, there is still room for improvement.
  • CMP equipment is a key technology in the chip manufacturing process. Relying on CMP equipment, chip manufacturing can be expanded from flat to three-dimensional, and the size of the chip can be made smaller and smaller, so it is a very critical process in the wafer processing production chain.
  • the structure of the existing CMP equipment usually consists of a turret mechanism and a four-station device (three flattening rotary tables and a loading station) and four polishing heads on the turret mechanism.
  • the disadvantage of the above equipment is that the entire mechanism is relatively large and the structure is complicated. Because the cross turret needs to rotate a large angle range frequently, the data line mounted on the sensor may rotate a large angle following it, which will easily affect the measurement stability of the sensor. When one part of the equipment needs to be repaired, the whole machine needs to stop working, which greatly reduces the utilization rate of the equipment, and will cause poor process stability during wafer processing.
  • One of the objectives of the present invention is to propose a new type of chemical mechanical planarization device for polishing unit array layout based on the problems of low wafer transfer efficiency and complicated transfer mechanism structure in existing chemical mechanical planarization devices, and based on the array layout.
  • a wafer transfer module is proposed. The wafer transfer module is disposed above the polishing unit array, so the wafer transfer unit of the wafer transfer module can pass through the polishing unit at any time without being disturbed.
  • Another object of the present invention is to provide a chemical mechanical planarization device and a wafer transfer method thereof, which are responsible for transferring the entire process between a polishing transfer stage, a polishing loading stage, and a cleaning transfer stage; that is, integration At the same time as the wafer transfer robot and wet wafer transfer robot, the wafer transfer between the various polishing loading stations is also completed.
  • a third object of the present invention is to propose a modularized wafer flattening unit for the above problems.
  • This modularized planarization unit can define the required number of units according to customer process requirements. This unit is divided into two areas. One part is called a flattening unit inside the unit, which contains a polishing platform, a polishing turntable, a polishing head, a polishing swing arm, a dresser swing arm, and a polishing liquid spraying arm. The other area is for the loading platform. The role of wafer loading and unloading.
  • the technical solution adopted by the present invention is a chemical mechanical planarization device, which includes a polishing module, a cleaning module, and a wafer transfer module.
  • the cleaning module cleans the polished wafer.
  • the polishing module includes two columns of polishing unit arrays, each column of polishing units includes two or more groups of polishing units, and the polishing loading tables corresponding to the two columns of polishing unit arrays are longitudinally arranged in the column direction of the polishing unit array, and the cleaning module Arranged in two rows, corresponding to two rows of polishing unit arrays, the working part of the wafer transfer module is located vertically above the polishing loading table arranged in the longitudinal direction, and the wafer is completed in other loading and unloading areas and the polishing loading table and the polishing. Transfer between loading stations.
  • the other loading and unloading areas are cleaning transfer tables, and wafers entering and exiting the polishing unit are temporarily stored through the cleaning transfer tables.
  • the wafer transfer module includes one or more sets of wafer transfer units, and each group of wafer transfer units includes a guide device, a horizontal movement driving device, a vertical movement mechanism, a wafer chuck and a wafer jaw, and the horizontal movement drive
  • the device drives the vertical movement mechanism to slide horizontally along the guide device.
  • the vertical movement mechanism is connected to the wafer chuck and can control the wafer chuck to work in two modes: high and low.
  • the wafer jaws are mounted on the wafer chuck. On, you can do the opening and closing operations.
  • each of the above-mentioned multiple sets of wafer transfer units forms a cascade along the column direction of the two columns of polishing units to complete the wafer in other loading and unloading areas, such as cleaning the transfer table. , And transfer between each polishing loading station and each polishing loading station.
  • the multiple sets of wafer transfer units can cooperate with each other to achieve wafer flow in the entire polishing unit array.
  • the wafer chuck is a flip structure, and two sets of wafer claw mechanisms are arranged on both sides thereof.
  • the above polishing loading table can be moved longitudinally in the column direction of the polishing unit array.
  • Such a polishing loading table can correspond to more than one polishing unit. For example, in a 2 column ⁇ 3 group layout, only 3 polishing loading tables are needed. Corresponds to 6 polishing units.
  • a polishing door which can be opened and closed is provided between the polishing unit and the polishing loading table.
  • the invention further proposes a method for wafer transfer using the chemical mechanical planarization equipment, which specifically includes the following steps:
  • the vertical movement mechanism controls the wafer chuck to be high, so that the wafer chuck can walk freely in the horizontal direction;
  • the vertical movement mechanism controls the wafer chuck to descend to a low position, and the wafer claws on the wafer chuck perform a wafer release operation;
  • the present invention Compared with the existing chemical mechanical planarization equipment technology, the present invention has the following beneficial technical effects:
  • the layout in which the polishing units are arranged in two rows and the wafer transfer unit is centered helps reduce the transfer stroke.
  • the processing efficiency of the chemical mechanical planarization equipment is increased by about 50% year-on-year.
  • the wafer transfer unit above the polishing loading stage can transfer wafers from one polishing loading stage to another polishing loading stage, or take the wafer into or out of the polishing module, the wafer transfer unit is arranged in the The polishing head is described above, so when the polishing head is loading or unloading a wafer on the polishing head, the wafer transfer unit can pass through the polishing unit at any time without interference;
  • the cleaning modules arranged on the left and right can choose to place the wafer in any cleaning module through the cleaning robot, resulting in the efficiency of the polishing plus cleaning combined unit being improved;
  • the wafer transfer unit can be two or more sets to meet the needs of two rows and multiple sets of polishing unit arrays, and the equipment has good scalability.
  • the present invention provides a chemical mechanical planarization device, wherein the wafer transfer module includes at least one set of wafer transfer robots; the wafer transfer robot includes: a horizontal transmission mechanism, and the horizontal transmission A vertical transmission mechanism connected to the mechanism and a wafer grasping device connected to the vertical transmission mechanism; the vertical transmission mechanism drives the wafer grasping device to perform vertical linear movement up and down; the horizontal transmission mechanism drives the vertical transmission The mechanism performs horizontal and linear motion, thereby driving the wafer gripping device to perform horizontal linear motion; a polishing transfer table, a cleaning transfer table, and a polishing loading table are arranged within the range of movement of the wafer grasping device in the horizontal linear movement direction. .
  • the wafer gripping devices of the two or more sets of wafer transfer robots are respectively located in different regions of different heights while moving along a horizontal straight line to avoid collision.
  • the polishing transfer table, the cleaning transfer table, and the polishing loading table are sequentially arranged along a straight line; the polishing transfer table and the cleaning transfer table are provided with cleaning modules on both sides thereof; and the polishing load Polishing modules are set on both sides of the table.
  • the wafer transfer robot is provided above the polishing transfer table, the cleaning transfer table, and the polishing loading table by lifting.
  • the present invention also provides a method for wafer transfer using the above-mentioned chemical mechanical planarization equipment, which includes the following steps:
  • the horizontal transmission mechanism drives the wafer grasping device to move above the polishing transfer table, and the wafer grasping device descends to the polishing transfer table position along the vertical transmission mechanism to grasp the wafer;
  • the wafer grasping device carries the wafer to a certain height along the vertical transmission mechanism, and is then driven by a horizontal transmission mechanism in a horizontal straight direction to a position above a polishing loading table;
  • the wafer gripping device carries the wafer down to the corresponding polishing loading table position along the vertical transmission mechanism to release the wafer; at this time, the wafer transfer robot can move other wafers;
  • the wafer grasping device is driven by the horizontal transmission mechanism to the polishing loading table on which the polished wafers are loaded, and the wafer grasping device is lowered to the polishing loading table position along the vertical transmission mechanism to grasp the wafer;
  • the wafer grasping device carries the wafer to a certain height along the vertical transmission mechanism, and is driven by the horizontal transmission mechanism to above the cleaning transfer table. The wafer grasping device descends to the cleaning transfer table position along the vertical transmission mechanism and releases the crystal. circle;
  • S7 The wafer is transferred to the cleaning module through the cleaning transfer table, and the cleaning process after polishing is completed.
  • the present invention has the following beneficial effects:
  • the wafer transfer robot provided by the present invention can directly transfer wafers from the polishing transfer table to the polishing loading table. Since no transfer is required, the number of wafer transfers is reduced, the wafer transfer time is shortened, the transfer efficiency is improved, and the crystal is reduced. The probability of the circle being damaged due to transmission.
  • the chemical mechanical planarization equipment provided by the present invention can symmetrically arrange two sets of the above-mentioned wafer transfer robots and work independently of each other. According to polishing requirements, only one set of wafer transfer robots or two sets can be used at the same time. Select the amount of wafer transfer robots used to make the configuration and use of wafer transfer robots more flexible, and improve the overall production capacity and production efficiency.
  • the technical solution adopted by the present invention is a wafer planarization unit, which includes: a polishing platform chassis and a polishing platform located above the polishing platform; a polishing turntable is arranged on the polishing platform; and a polishing swing arm drives the polishing head to The polishing turntable swings, the polishing liquid spraying arm, the dresser swing arm, the wafer loading and unloading rack and the wafer loading table located above it.
  • a polishing swing arm drives the polishing head to move the wafer to the wafer loading table for loading and unloading.
  • the moving door is closed during the polishing operation, and the moving door is opened during the wafer loading and unloading operation. After the polishing operation is completed, the internal and external gas circulation is cut off by the switch of the moving door.
  • the moving door can be driven by a motor or an air cylinder.
  • the driving mechanism of the polishing swing arm may be located above or below the polishing platform as a whole.
  • the above driving mechanism includes a motor, a reduction mechanism, and a reduction mechanism flange.
  • the stator of the motor is connected to the casing of the reduction mechanism, and the casing of the reduction mechanism is connected to the polishing pendulum through the reduction mechanism flange. arm.
  • the stator of the motor is connected to the housing of the reduction mechanism through its own flange and screws.
  • the driving mechanism of the polishing swing arm When the driving mechanism of the polishing swing arm is located below the polishing platform as a whole, the driving mechanism includes a motor, a reduction mechanism, a flange of the reduction mechanism, a casing of the motor and a casing of the reduction mechanism, a motor shaft transmission input to the reduction mechanism, and the reduction mechanism passes through the reduction.
  • the mechanism flange is mounted to the lower end face of the drive shaft housing.
  • the output shaft of the speed reduction mechanism is transmitted to the transmission shaft through a coupling, and then the torque is transmitted to the polished swing arm through the swing arm gland.
  • the advantages of the present invention are:
  • the unit contains independent functional structure and processing area to ensure the stability of the process, and because the unit adopts a modular design, the number of CMP groups can be customized by the customer according to demand. The number of CMP groups can be defined to meet different processing. Process requirements.
  • the external wafer loading mechanism can operate independently, so the problem that the operation is stopped due to wafer loading and the processing efficiency is reduced is reduced.
  • the structure of a swing arm the original requirements for both polishing and loading and unloading wafers were met, and the complex structure of the original turret plus linear motion to meet its processing and loading wafer requirements was simplified.
  • the twist angle of the cable of the upper related electrical component that the swing arm rotates is less than 180 degrees, which is half of the previous structural twist angle, which reduces the accident rate caused by torsional fatigue of the cable.
  • FIG. 1 is a top view of a chemical mechanical planarization device (2 ⁇ 3 array) according to the present invention
  • FIG. 2 is a perspective view of the chemical mechanical planarization device shown in FIG. 1;
  • FIG. 3 is a schematic structural diagram of a polishing unit
  • FIG. 4 is a schematic structural diagram of a wafer transfer unit according to the present invention.
  • FIG. 5 is a perspective view of an embodiment having a dual wafer transfer unit
  • FIG. 6 is a perspective view of an embodiment with a movable polishing loading table
  • FIG. 7 is a schematic structural diagram of an embodiment of a wafer transfer robot according to the present invention.
  • FIG. 8 is a schematic structural diagram of an embodiment of a chemical mechanical planarization device according to the present invention.
  • FIG. 9 is an axial perspective view of related equipment of the present invention.
  • FIG. 10 is a schematic half sectional view of a polishing swing arm structure of Embodiment 1;
  • FIG. 11 is a schematic half sectional view of a polishing swing arm structure of Embodiment 2.
  • FIG. 11 is a schematic half sectional view of a polishing swing arm structure of Embodiment 2.
  • a chemical mechanical planarization apparatus includes a polishing module composed of a plurality of polishing units and a plurality of cleaning modules.
  • Each of the polishing units includes a table, a polishing disc, a polishing head, a polishing arm, a dresser, a polishing liquid arm, and the like.
  • a plurality of polishing loading tables are arranged on one side of the plurality of polishing units.
  • the polishing disc, the polishing head, the polishing arm, the dresser, and the polishing liquid arm are arranged on a workbench according to a processing position.
  • the polishing arm can carry a polishing head to move between a polishing disc and a polishing loading table.
  • the dresser grinds the polishing disc with a certain pressure on the polishing disc.
  • the polishing liquid arm can provide the chemical liquid required for polishing.
  • the polishing door of the polishing unit is opened, and the polishing arm rotates the polishing head to the position of the polishing loading table.
  • the polishing arm carries the polishing head to the polishing disk position for polishing.
  • the polishing door is closed to prevent leakage of liquid and water vapor in the polishing area.
  • the polishing liquid arm flows out of the polishing liquid, and the dresser performs the dressing work on the polishing disc.
  • the polishing disc rotates at a certain speed, and the polishing head rotates at a certain speed at the same time.
  • a cleaning module is connected to the polishing unit array.
  • the cleaning modules are arranged in two or more rows to form a polishing and cleaning unit.
  • a cleaning transfer table is installed at the interface between the polishing unit array and the cleaning module, and wafers entering and leaving the polishing module are temporarily stored through the cleaning transfer table.
  • a robot is installed in the cleaning module, which can transfer the wafer between the polishing unit and the cleaning module.
  • the wafer transfer passes through the cleaning transfer table.
  • the chemical mechanical planarization apparatus of the present invention generally also integrates an equipment front-end unit module (EFEM).
  • EFEM equipment front-end unit module
  • the cleaning unit generally includes megasonic cleaning, roller brush cleaning, wafer drying, and the like.
  • the polishing module is a polishing unit array composed of two columns and multiple sets of polishing units. All the polishing loading tables of the two columns and multiple sets of polishing units are arranged longitudinally in the column direction of the two columns of polishing units.
  • the polishing unit array Can also be expanded to 2 columns and multiple groups. In order to facilitate the introduction of the principles of the present invention and the implementation of the present invention by those skilled in the art, the following descriptions of the embodiments are based on the layout of 2 columns and 3 groups, and are hereby described.
  • Figures 1 and 2 show a top view and a perspective view of a (2 ⁇ 3 array) chemical mechanical planarization device.
  • the chemical mechanical planarization device includes a polishing unit array 100, a cleaning module combination 200, and a wafer transfer unit 120.
  • the polishing unit array 100 is composed of two columns and three rows of polishing units 110.
  • Each group of polishing units 110 includes, as shown in FIG. 3, a table 115, a polishing disc 117, a polishing head 112, a polishing arm 111, a dresser 114, a polishing liquid arm 113, a polishing door 119, and the like.
  • a polishing door 119 is provided between the polishing unit 110 and the polishing loading table 116.
  • the polishing door 119 of the polishing unit 110 is opened, and the polishing arm 111 carries the polishing head 112 to the polishing loading table 116.
  • the polishing arm 111 rotates the polishing head 112 to the position of the polishing disk 117 for polishing.
  • the polishing door 119 is closed to prevent leakage of liquid and water vapor in the polishing area.
  • the wafer that needs to be chemically mechanically polished enters the polishing unit array 100 through the cleaning transfer table 118 or other areas that serve as temporary wafer loading and unloading areas.
  • the chemically mechanically polished wafer leaves the polishing unit array 100 through the cleaning transfer table 118.
  • the wafer transfer between the cleaning transfer table 118 and each polishing loading station 116 and the wafer transfer between each polishing loading station 116 are completed by the wafer transfer unit 120.
  • a polishing disc 117, a polishing head 112, a polishing arm 111, a dresser 114, and a polishing liquid arm 113 are disposed on a table 115.
  • the polishing disc 117 is connected to the table 115 through a bearing system, and the polishing disc 117 can be continuously rotated.
  • the polishing arm 111 can carry a polishing head 112 between a polishing disc 117 and a polishing loading table 116. During the polishing process, the polishing arm 111 carries the polishing head 112 slightly swinging within the range of the polishing disc 117.
  • the dresser 114 reciprocates within the radius of the polishing disc 117, and the on-line dressing of the polishing disc 117 is realized by the rotating grinding wheel on the head of the dresser 114.
  • the polishing liquid arm 113 supplies polishing liquid on the polishing disc 117. After the wafer polishing is completed, the polishing arm 113 rotates the polishing head 112 to the position of the polishing loading table 116 to unload the wafer. After the wafer is unloaded, another wafer is reloaded for the next polishing cycle.
  • FIG. 4 is a schematic diagram of a wafer transfer unit 120 as a core component of a wafer transfer module, including: a guide device 121, a horizontal movement driving device 122, a vertical movement mechanism 123, a wafer chuck 124, and a wafer claw. 125 and so on. This part is the working part of the wafer transfer module, which is connected to the chemical mechanical planarization equipment through the connection part (not shown) of the wafer transfer module.
  • the vertical movement mechanism 123 controls the wafer chuck 124 at a high position, so that the wafer chuck 124 can walk freely in the horizontal direction.
  • the horizontal movement driving device 122 drives the vertical movement mechanism 123 to run along the guide 121 to the cleaning transfer table 118 or the polishing loading table 116, the vertical movement mechanism 123 controls the wafer chuck 124 to descend to a low position, and the wafer chuck 124 is loaded.
  • the vertical movement mechanism 123 controls the wafer chuck 124 to rise to a high position, and the horizontal movement driving device 122 drives the vertical movement mechanism 123 to run along the guiding device 121 to Above the next cleaning transfer table 118 or polishing loading table 116, the vertical movement mechanism 123 controls the wafer chuck 124 to descend to a low position, and the wafer claw 125 on the wafer chuck 124 performs a wafer pick-up operation.
  • This reciprocating movement allows the wafer to be transferred between the cleaning transfer table 118 and each polishing loading table 116. In order to improve the wafer transfer efficiency, as shown in FIG.
  • the wafer chuck 124 in the wafer transfer unit 120 is designed as a flip structure, and two sets of wafer claw 125 mechanisms are arranged on both sides of the wafer chuck 124.
  • the example can effectively reduce the walking route of the wafer transfer unit 120 and increase the transfer capacity of the wafer transfer unit 120.
  • the wafer transfer unit above the polishing loading stage can transfer wafers from one polishing loading stage to another polishing loading stage, or take wafers in or out of the polishing module, because the wafer transfer unit is arranged in the polishing Above the loading table, when the polishing head is loading or unloading a wafer on the polishing loading table, the wafer transfer unit can pass through the polishing unit at any time without being disturbed, which constitutes one of the most important advantages of the present invention.
  • the wafer after chemical mechanical polishing is placed on the cleaning transfer table 118 by the wafer transfer unit 120, and the robot of the cleaning module 200 transfers the wafer from the cleaning transfer table 118 to the cleaning module 200. Washing and drying after polishing.
  • the cleaning module 200 is arranged on the left and right. According to requirements, the cleaning robot can choose to place the wafer in any of the cleaning modules 200.
  • the wafer transfer unit 120 may be designed in two or more sets, and a cascade is formed in the column direction of the two rows of polishing units to meet the production capacity requirements of the two rows of multiple polishing unit arrays 100 .
  • the wafer transfer is realized by the cooperation of the wafer transfer unit 120a and the wafer transfer unit 120b.
  • the wafer transfer unit 120a and the wafer transfer unit 120b can share a guiding device 121a.
  • the wafer transfer unit 120a also It includes a horizontal motion driving device 122a, a vertical motion mechanism 123a, a wafer chuck 124a, and a wafer claw provided on the wafer chuck 124a.
  • the wafer transfer unit 120b further includes a horizontal motion driving device 122b, a vertical motion mechanism 123b, The wafer chuck 124b and a wafer claw provided on the wafer chuck 124b.
  • the horizontal motion driving device 122a and the horizontal motion driving device 122b are arranged on both sides of the guide device 121a, and there is a coincidence of movable coverage only in the middle region of the guide device 121a.
  • the transfer unit 120a is responsible for transferring wafers between the cleaning transfer stage 118, the polishing loading stage 116f, the polishing loading stage 116e, and the polishing loading stage 116d.
  • the transfer unit 120b is responsible for the wafers on the polishing loading stage 116d, the polishing loading stage 116c, and the polishing loading. Transfer between the stage 116b and the polishing loading stage 116a.
  • the transfer unit 120a and the transfer unit 120b can reach the position of the polishing loading table 116d at different times, so as to realize the flow of the wafer in the entire polishing unit array 100.
  • a (2 ⁇ 3 array) chemical mechanical planarization device is provided with three movable polishing loading tables, namely a polishing loading table 116a, a polishing loading table 116b, and a polishing loading table. 116c.
  • the polishing loading stage 116a is responsible for the polishing unit 110a and the polishing unit 110b;
  • the polishing loading stage 116b is responsible for the polishing unit 110c and the polishing unit 110d;
  • the polishing loading stage 116c is responsible for the polishing unit 110e and the polishing unit 110f.
  • the chemical mechanical planarization device transfers wafers by a wafer transfer unit 120a.
  • the wafer transfer unit 120a includes a guide 121a, a horizontal movement driving device 122a, a vertical movement mechanism 123a, a wafer chuck 124a, and a wafer Wafer jaws on the circular chuck 124a.
  • the present invention adopts a layout in which the polishing units are arranged in two or more rows and the wafer transfer unit is centered to help reduce the transfer stroke.
  • the processing efficiency of the chemical mechanical planarization equipment is greatly improved year-on-year.
  • the overall layout is more flexible and adaptable.
  • the present invention provides a chemical mechanical planarization device, in which a wafer transfer module includes at least one set of wafer transfer robot 310; the wafer transfer robot 310 includes: a horizontal transmission mechanism 311, and A vertical transmission mechanism 312 connected to the horizontal transmission mechanism 311 and a wafer grasping device 313 connected to the vertical transmission mechanism 312; the vertical transmission mechanism 312 drives the wafer grasping device 313 to perform vertical linear motion up and down; The horizontal transmission mechanism 311 drives the vertical transmission mechanism 312 to perform horizontal linear motion, thereby driving the wafer grasping device 313 to perform horizontal linear motion; at the same time, the wafer grasping device 313 of the wafer transfer robot 310 is horizontal.
  • a polishing transfer table 101, a cleaning transfer table 118, and a polishing loading table 116 are arranged in the movable range covered by the linear motion direction.
  • the wafer gripping device 313 of the wafer transfer robot 310 can reach each position of the polishing transfer table 101, the cleaning transfer table 118, and the polishing loading table 116 arranged in a straight line.
  • the entire process of wafer 401 can be transferred between the polishing transfer table 101, the polishing load table 116 and the cleaning transfer table 118, and between the polishing load tables 116 of the polishing module; therefore, the wafer transfer robot is integrated At the same time as the wet wafer transfer robot, wafer 401 transfer between wafer polishing stages 116 is also completed. Because the wafer 401 can be directly transferred from the polishing transfer table 101 to the polishing loading table 116, since no transfer is required, the number of transfers of the wafer 401 is reduced, the wafer 401 transfer time is shortened, the transfer efficiency is improved, and the wafer 401 is reduced. The probability of damage to the transmission.
  • the polishing transfer table 101, the cleaning transfer table 118, and the polishing loading table 116 can be arranged in order along a straight line. Of course, it can also be specifically arranged according to actual production needs, with the aim of improving transmission efficiency.
  • at least one cleaning module is provided on each side of the polishing transfer table 101 and the cleaning transfer table 118.
  • the cleaning modules on both sides of the cleaning transfer table 118 and the polishing transfer table 101 are respectively configured to include a first cleaning unit 504, a second cleaning unit 503, a third cleaning unit 502, and a drying unit. 501 combination.
  • Polishing modules 116 are provided on both sides of the polishing loading platform 116, and the polishing modules are polishing units 110 arranged in a 2 ⁇ 3 array; the polishing loading platform 116 can be selected according to production conditions.
  • the wafer transfer robot 310 may be provided above the polishing transfer table 101, the cleaning transfer table 118, and the polishing loading table 116 by lifting or other similar methods.
  • the device may include two sets of the wafer transfer robots 310 arranged in parallel and symmetrically to realize the transfer and pick-up of the wafer 401 at the same time.
  • the two sets of wafer transfer robots 310 can work independently without affecting each other.
  • the positioning position of the wafer gripping device 313 can be set to two areas; when it is located in the low area, it should be set higher than possible obstacles such as the polishing head in the polishing unit 110. To avoid collisions.
  • the wafer gripping devices 313 are respectively selected to be located in different areas, so as to avoid collision between the wafer gripping devices 313.
  • the distance between the two vertical transmission mechanisms 312 of the two sets of the wafer transfer robots 310 in the working state is larger than the diameter of the wafer 401.
  • the wafer transfer robot 310 in the present invention can realize the picking and placing of the wafer 401 through the wafer gripping device 313, and can realize the positions of the wafer 401 in the horizontal straight line through the cooperation of the horizontal transmission mechanism 311 and the vertical transmission mechanism 312. Transmission.
  • the movable range of the lifting and horizontal movement of the wafer gripping device 313 can be changed according to the actual situation.
  • the horizontal transmission mechanism 311 and the vertical transmission mechanism 312 in the present invention generally consist of a horizontal / vertical guide device / mechanism plus a horizontal / vertical drive device.
  • Horizontal / vertical guides can be in the form of linear rolling guides, linear sliding guides, linear rolling bearings, etc .
  • horizontal / vertical driving devices can use linear motors, ball screws, synchronous toothed belts, steel belts, etc.
  • the innovation of the present invention lies in the improvement of the conventional wafer 401 transfer method by the structure and positional relationship of the wafer transfer robot 310 described above.
  • the existing technology can be used, as long as the wafer gripping device 313 can perform horizontal linear motion and vertical vertical motion.
  • any combination of the above-mentioned specific embodiments of the guide mechanism and the driving device can be achieved, and the above-mentioned beneficial technical effects achieved by the present invention can be achieved.
  • the horizontal transmission mechanism 311 includes a horizontal guide device 3111, a horizontal drive device 3112, and a horizontal movement platform 3113; the horizontal drive device 3112 drives the horizontal movement platform 3113 along the horizontal guide device 3111 Do horizontal straight motion.
  • the vertical driving mechanism 312 includes a vertical driving device 3122 and a vertical guiding device 3121 connected to the horizontal moving platform 3113.
  • the vertical driving device 3122 drives the wafer grasping device 313 to make vertical straight lines along the vertical guiding device 3121. motion.
  • the wafer grasping device 313 includes a claw 3131 and a pushing claw 3132 connected to the vertical driving device 3122.
  • the pushing claw 3132 drives the claw 3131 to move horizontally and cooperates with the claw 3131 to obtain Put wafer 401.
  • the innovation of the chemical mechanical planarization equipment provided by the present invention is that the wafer transfer robot 310 provided by the present invention is used, and a polishing turntable is arranged within the movable range of the horizontal and linear movement direction of the wafer grasping device 313. 101. Cleaning the transfer table 118 and the polishing loading table 116. While integrating the wafer transfer robot and the wet wafer transfer robot, the wafer 401 transfer between the polishing polishing tables 116 is also completed. According to polishing requirements, only one set of wafer transfer robots can be used or more sets can be used simultaneously. The amount of wafer transfer robots can be selected according to the polishing workload, which makes the configuration and use of wafer transfer robots more flexible and improves the overall production capacity. And productivity.
  • the present invention also provides a method for specifically performing wafer transfer during the actual processing of wafer 401 by using the chemical mechanical planarization equipment, which specifically includes the following steps:
  • the horizontal transmission mechanism 311 drives the wafer grasping device 313 to move above the polishing transfer table 101, and the wafer grasping device 313 descends to the position of the polishing transfer table 101 along the vertical transmission mechanism 312 to grasp the wafer 401;
  • the wafer gripping device 313 carries the wafer 401 to a certain height along the vertical transmission mechanism 312, and is then driven by the horizontal transmission mechanism 311 in a horizontal straight direction to a position above a certain polishing loading table 116;
  • the wafer gripping device 313 carries the wafer 401 down the vertical transmission mechanism 312 to the corresponding polishing loading table 116 position, and releases the wafer 401. At this time, the wafer transfer robot 310 can carry other wafers 401;
  • the wafer grasping device 313 is driven by the horizontal transmission mechanism 311 above the polishing loading table 116, and the wafer grasping device 313 descends along the vertical transmission mechanism 312 to the position of the polishing loading table 116 to grasp the wafer 401;
  • the wafer grasping device 313 carries the wafer 401 to a certain height along the vertical transmission mechanism 312, and is driven by the horizontal transmission mechanism 311 to above the cleaning transfer table 118.
  • the wafer grasping device 313 descends to the vertical transmission mechanism 312 to Clean the position of the turntable 118 and release the wafer 401;
  • step S7 The wafer 401 is transferred to the cleaning module through the cleaning transfer table 118 to perform the post-polishing cleaning process, and the first cleaning unit 504, the second cleaning unit 503, the third cleaning unit 502, and the drying unit 501 complete the cleaning process after polishing. .
  • the wafer gripping device 313 can also carry the wafer 401 to a certain height along the vertical transmission mechanism 312, and be driven by the horizontal transmission mechanism 311 to other polishing loading tables 116 to release the wafer 401 in the same manner. And finish polishing again.
  • the wafer transfer robot provided by the present invention can directly transfer wafers from the polishing transfer table to the polishing loading table. Since no transfer is required, the number of wafer transfers is reduced, the wafer transfer time is shortened, and the wafer transfer time is improved. Transfer efficiency, reducing the probability of wafer damage due to transfer.
  • the chemical mechanical planarization equipment provided by the present invention can symmetrically arrange two sets of the above-mentioned wafer transfer robots, and work independently of each other. According to polishing requirements, only one set of wafer transfer robots or two sets can be used at the same time, according to the polishing workload. Select the amount of wafer transfer robots used to make the configuration and use of wafer transfer robots more flexible, and improve the overall production capacity and production efficiency.
  • FIG. 9 The axial schematic diagram of the wafer flattening unit of the present invention is shown in FIG. 9, which includes a wafer loading and unloading rack 1, a wafer loading table 2, a polishing swing arm 3, a moving door 4, a flattening unit cover 5, and a polishing liquid spray.
  • the polishing swing arm 3 carries a polishing head 7 and cooperates with the polishing liquid spraying arm 6 and the dresser swing arm 8 to complete a polishing operation together.
  • the polishing swing arm 3 carries the polishing head 7 and the loaded wafer to swing above the wafer loading table 2 for unloading. After unloading, it swings to the inside while the moving door 4 is closed, and then the second polishing operation is performed.
  • Embodiment 1 As shown in FIG. 10, the driving mechanism of the polishing swing arm 3 is placed above the polishing platform 9.
  • the driving mechanism includes: the rotor of the motor 20 is connected to the speed reduction mechanism 12, and the stator of the motor 20 is connected to the housing of the speed reduction mechanism 12, to reduce the speed
  • the housing of the mechanism 12 is connected to the polishing swing arm 3 through a reduction mechanism flange 13.
  • One side of the polishing swing arm 3 is provided with a polishing head 7.
  • the other end of the swing arm 3 contains a top bearing 18 and a lower bearing 16 to ensure the swing arm.
  • the inner and outer rings of the top bearing 18 are connected to the fixed shaft 22 and the polished swing arm 3 through their own flange screw holes, and the axial movement of the lower bearing 16 is passed through the bearing inner ring nut 15 and the polished swing arm 3 Shoulder blocking.
  • the rotor of the motor 20 is connected to the reduction mechanism 12, and the output shaft of the reduction mechanism 12 is connected to the fixed shaft 22 through the coupling 14.
  • the rotor of the motor 20 rotates and is output through the reduction mechanism 12.
  • the output shaft of the reduction mechanism 12 is connected to the coupling 14, and the coupling 14 and the fixed shaft 4 are connected by a key 19. Since the fixed shaft 4 cannot rotate, the speed is reduced.
  • the output shaft of the mechanism 12 is also fixed and cannot be rotated, and the rotor of the motor 20 cannot be rotated at the same time, but the casing of the reduction mechanism 12 is not fixed, so the entire transmission relationship is that the casing of the motor 20 carries the casing of the reduction mechanism 12 and the polished swing arm. 3 rotate together to realize two movements of the mechanism: swinging during polishing and swinging positioning during wafer loading and unloading. All operations are performed inside the flattening unit cover 5, and the wafer loading table 2 can perform wafer loading and unloading work with an external mechanism at any time without affecting the operation of the internal polishing mechanism.
  • Embodiment 2 As shown in FIG. 11, the driving mechanism of the polishing swing arm 3 is placed below the polishing platform 9.
  • the connection relationship of the driving mechanism is as follows: the housing of the motor 20 is connected with the housing of the reduction mechanism 12 by a screw, and the rotating shaft of the motor 20
  • the transmission input reduction mechanism 12 is mounted to the lower end surface of the transmission shaft housing 27 through the reduction mechanism flange 31.
  • the rotor of the motor 20 is connected to the output shaft of the reduction mechanism 12 and the stator of the motor 20 is connected to the housing of the reduction mechanism 12.
  • the torque of the motor 20 is output through the output shaft of the reduction mechanism 12 and then transmitted to the transmission shaft through the coupling 14
  • the radial and axial directions of the transmission shaft 25 are fixed by two sets of bearings 26, and the movement between the two sets of bearings 26 is blocked by the bearing spacer 29, while the inner ring of the two sets of bearings 26 moves up and down respectively.
  • the upper pair of bearing locks 24 and the lower pair of bearing locks 28 are used for blocking, and the outward movement of the outer ring of the two sets of bearings 26 is prevented by the upper bearing gland 17 and the lower bearing gland 30.
  • the transmission shaft 25 transmits the torque to the polishing swing arm 3 through the swing arm gland 23, thereby realizing the device swinging the wafer on the polishing turntable 11 and positioning the wafer during loading and unloading. All operations are performed inside the flattening unit cover 5, and the wafer loading table 2 can perform wafer loading and unloading work with an external mechanism at any time without affecting the operation of the internal polishing mechanism.
  • the present invention provides a CMP equipment unit (chemical mechanical planarization unit) that can work individually and in a cluster.
  • the unit contains independent functional structures and processing areas to ensure process stability. And because this unit adopts a modular design, customers can customize the quantity according to their needs, and freely define the number of CMP groups to meet different processing technology requirements.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

一种化学机械平坦化设备，包括抛光模块、清洗模块和晶圆传输模块，抛光模块包含两列抛光单元阵列（100），每列抛光单元阵列包含两组或多组抛光单元（110），两列抛光单元阵列（100）对应的抛光装载台（116）在位于抛光单元阵列（100）的列方向上纵向排列，晶圆传输模块的工作部位于沿纵向排列的抛光装载台（116）的垂直上方。化学机械平坦化设备可以直接传输晶圆，无需中转，布局合理，提高了加工效率。还提供了晶圆传输方法以及晶圆平坦化单元。

Description

一种化学机械平坦化设备和晶圆传输方法、晶圆平坦化单元 技术领域
本发明涉及半导体设备技术领域，具体涉及一种化学机械平坦化设备和晶圆传输方法、晶圆平坦化单元。
背景技术
随着半导体行业的飞速发展,集成电路特征尺寸不断趋于微细化,因此半导体薄膜表面的高平坦化对器件的高性能、低成本、高成品率有着重要的影响。
化学机械平坦化(Chemical Mechanical Planarization，CMP)技术是化学作用和机械作用相结合的技术。其工作原理是，首先工件表面材料与抛光液中的氧化剂、催化剂等发生化学反应，生成一层相对容易去除的软质层,然后在抛光液中的磨料和抛光垫的机械作用下去除该软质层，使工件表面重新裸露出来，随后再进行化学反应，藉此在化学作用过程和机械作用过程的交替进行中完成工件表面抛光。
目前，化学机械平坦化技术已经发展成集在线量测、在线终点检测、清洗等技术于一体的，化学机械平坦化技术是集成电路向微细化、多层化、薄型化、平坦化工艺发展的产物，同时也是晶圆由200mm向300mm乃至更大直径过渡、提高生产率、降低制造成本、衬底全局平坦化所必需的工艺技术。
一个典型的化学机械平坦化设备通常包括多个抛光单元以及清洗、晶圆运输、干燥等辅助装置。抛光单元通常包括工作台、抛光盘、抛光头、抛光臂、修整器、抛光液臂等，抛光盘、抛光头、抛光臂、修整器、抛光液臂按照工艺加工位置布置在工作台上。实际的晶圆加工过程中发现，抛光单元与清洗、晶圆运输等模块的空间布置对于化学机械平坦化设备整体的抛光产出(throughput)有极大的影响。晶圆在抛光单元与外部以及在抛光单元之间的传输通常依靠抛光装载台或起类似作用的装置来实现，关于抛光装载台与抛 光单元的空间布局，业界已经有比较成熟的模式，如专利号为US5738574的美国专利文献披露的技术方案中，其抛光装载台(transfer station)与三个抛光单元为正方形布局。工作时，一个带有四个呈正方形分布抛光头的、且可以旋转的装置(carousel)向下运动，依次与抛光装载台完成晶圆的装卸。值得一提的是，上述装置中，三个抛光单元自带一个清洗装置，位置上与抛光单元近邻，其中一个位于对应的抛光单元与抛光装载台之间。很明显，由于一个抛光装载台需要借助一个共用的可以旋转的装置给三个抛光单元提供装卸服务，因此这种技术布局的缺点是工艺过程复杂。另一件美国专利US8795032B2公开了另一种布局，其中的四个抛光单元并排排列，晶圆传输由位于平坦化设备端部的装卸区和沿抛光单元排列方向设置的两个线性运输机构完成，线性运输机构的另一侧为清洗区。上述每一个线性运输机构为两个抛光单元提供服务，并为每个抛光单元设置两个传输工位，抛光单元的抛光头可以从其中一个传输工位装卸晶圆。这种布局采用了抛光单元的直线排列，但其缺点是每个抛光单元虽然设置两个传输工位，但抛光过程中抛光单元只从其中一个直接装卸晶圆，因此从晶圆传输效率的角度说还有需要改进的空间。
化学机械平坦化设备通常包括半导体设备前端模块(EFEM)、清洗模块和抛光模块。EFEM主要包括存放晶圆的片盒、传片机械手和空气净化系统等；清洗模块主要包括数量不等的兆声波清洗部件、滚刷清洗部件、干燥部件和各部件之间传输晶圆的装置等；抛光模块包括数量不等的抛光单元，每个抛光单元主要包括抛光台、抛光头、抛光供液系统和抛光垫修整系统等。
通常在清洗模块和抛光模块之间装有可以传输湿晶圆的湿片传输机械手。晶圆在化学机械平坦化设备中的典型路径如下,片盒中需要抛光的晶圆通过EFEM中的传片机械手放置于抛光中转台上，由湿片传输机械手将需要抛光的晶圆转移到抛光模块；晶圆在抛光模块加工完成后，再通过湿片传输机械手转移到清洗模块；晶圆完成清洗后，由EFEM内的传片机械手放回片盒中。
一般的化学机械平坦化过程中，晶圆在各个区域间的传输，晶圆从抛光中转台到抛光模块的各抛光装载台需要传片机械手和湿片传输机械手两个机械手一起完成，从晶圆传输效率的角度来说，同样还有需要改进的空间。
随着移动技术和智能技术的普及和推广，芯片行业对微型芯片的需求不断扩大，因此晶圆代工厂有限而且高昂的工厂空间对设备产能的要求越来越高。CMP设备是芯片制造工艺上的关键技术。依靠CMP设备，芯片的制造可以实现从平面向立体的拓展，芯片的体积才能越做越小，因此它在晶圆加工生产链中是一个非常关键工序。
作为对CMP设备考核的一个重要指标，CMP设备的生产率十分关键。现有CMP设备的结构通常是由十字转塔机构和四工位装置(三个平坦化旋转工作台和一个装载工位)以及转塔机构上的四个抛光头组成的。工作时，先通过抛光头将装载工位上的晶圆取出，旋转十字转塔将上一个加工完的晶圆放到此时已空置的装载位上，然后装载有晶圆的抛光头按工序放置到各个工位上，作业时通过抛光头沿十字转塔沿径向来回直线移动来实现整个晶圆的覆盖，加工完成后再将晶圆放置到装载工位上由机械手取走。
上述设备的缺点是整个机构较为庞大，结构复杂。由于十字架转塔需频繁旋转大角度范围，导致装载在上面传感器的数据线也许跟着转动大角度,容易影响传感器的测量稳定性。当设备其中一个部件需要维修时就需整机停止工作，这样就大大降低了设备的使用率，而且会导致晶圆加工时的工艺稳定性差。
发明的公开
本发明的目的之一在于针对现有化学机械平坦化设备中存在的晶圆传输效率低、传输机构结构复杂的问题提出一种新型抛光单元阵列布局的化学机械平坦化设备，并基于该阵列布局提出一种晶圆传输模块，该晶圆传输模块设置在抛光单元阵列的上方，因此晶圆传输模块的晶圆传输单元可以随时穿越抛光单元而不会受到干扰。
本发明的目的之二在于提供一种化学机械平坦化设备及其晶圆传输方法，用以负责将晶圆在抛光中转台、抛光装载台和清洗中转台之间整个过程的传输；即在整合传片机械手和湿片传输机械手的同时，还完成晶圆在各个抛光装载台之间的晶圆传输。
本发明的目的之三在于针对上述问题提出一种模块化设计的晶圆平坦化单元，这种模块化设计的平坦化单元可以按客户工艺需求来定义所需要的单 元数量。本单元分两个区域，一部分在单元内部称为平坦化单元，内部含有抛光平台、抛光转台、抛光头、抛光摆臂、修整器摆臂、抛光液喷撒臂，另一区域为装载台承担晶圆装卸的作用。
为达到上述目的一，本发明采用的技术方案为一种化学机械平坦化设备，包括抛光模块、清洗模块和晶圆传输模块，清洗模块对抛光后的晶圆进行清洗。所述抛光模块包含两列抛光单元阵列，每列抛光单元包含两组或多组抛光单元，两列抛光单元阵列对应的抛光装载台在位于抛光单元阵列的列方向上纵向排列，所述清洗模块排成两列，对应两列抛光单元阵列，所述晶圆传输模块的工作部位于沿纵向排列的抛光装载台的垂直上方，完成晶圆在其他装卸区与所述抛光装载台以及所述抛光装载台之间的传输。
上述其他装卸区为清洗中转台，进出抛光单元的晶圆要经过清洗中转台暂存。
进一步，上述晶圆传输模块包括一组或多组晶圆传输单元，每组晶圆传输单元包括导向装置、水平运动驱动装置、垂直运动机构、晶圆卡盘和晶圆卡爪，水平运动驱动装置驱动垂直运动机构沿导向装置做水平方向滑动，垂直运动机构与晶圆卡盘连接，并可以控制晶圆卡盘在高位和低位两个模式下工作，晶圆卡爪安装于晶圆卡盘上，可以做张开和闭合操作。
如果抛光单元阵列的行数较多，上述多组晶圆传输单元中的每组晶圆传输单元沿两列抛光单元的列方向上形成级联，完成晶圆在其他装卸区，如清洗中转台，与各个抛光装载台以及各个抛光装载台之间的传输。所述多组晶圆传输单元可以互相协作，实现晶圆在整个抛光单元阵列中的流转。
作为优选，上述晶圆卡盘为翻转结构，在其两面布置两套晶圆卡爪机构。
上述抛光装载台可在抛光单元阵列的列方向上纵向移动，这样一个抛光装载台可以对应一个以上的抛光单元，如在2列×3组的布局中，只需3个抛光装载台来就可以对应6个抛光单元。
为防止抛光区的液体和水汽外泄，抛光单元与抛光装载台之间设置可开启闭合的抛光门。
本发明还进一步提出一种利用上述化学机械平坦化设备进行晶圆传输的方法，具体包含以下步骤：
S1：在初始状态下，垂直运动机构控制晶圆卡盘处于高位，使得晶圆卡 盘可以沿着水平方向自由行走；
S2：当水平运动驱动装置驱动垂直运动机构沿导向装置运行到清洗中转台或者抛光装载台的上方时，垂直运动机构控制晶圆卡盘下降到低位，晶圆卡盘上安装的晶圆卡爪抓取晶圆；
S3：随后垂直运动机构控制晶圆卡盘上升到高位，水平运动驱动装置驱动垂直运动机构沿导向装置运行到下一个清洗中转台或者抛光装载台的上方；
S4：垂直运动机构控制晶圆卡盘下降到低位，晶圆卡盘上的晶圆卡爪进行释放晶圆操作；
S5：重复以上步骤，使得晶圆可以在清洗中转台和各个抛光装载台之间实现传递。
与现有化学机械平坦化设备技术相比，本发明具有以下有益技术效果：
1、本发明中采用抛光单元排成两列、晶圆传输单元居中的布局有助于减少传输的行程，化学机械平坦化设备加工效率同比提升约50％，而且通过采用模块化的布局，设备布局更灵活；
2、因为抛光装载台上方的晶圆传输单元可以将晶圆从一个抛光装载台转移到另一个抛光装载台，或者将晶圆从抛光模块拿进或者拿出，晶圆传输单元因为布置在所述抛光装载台的上方，所以抛光头在抛光装载台进行装载或者卸载晶圆时，晶圆传输单元可以随时穿越抛光单元而不会受到干扰；
3、与上述抛光单元与晶圆传输单元的布局相对应，左右布置的清洗模块通过清洗机械手可以选择将晶圆放至任一个清洗模块，导致抛光加清洗组合单元的效率也得到提升；
4、根据产能需要，晶圆传输单元可以为两套或者两套以上，以满足2列多组抛光单元阵列的需要，设备的可伸缩性较好。
为达到上述目的二，本发明提供了一种化学机械平坦化设备，其中，晶圆传输模块包括至少一套晶圆传输机械手；所述晶圆传输机械手包括：水平传动机构、与所述水平传动机构连接的垂直传动机构及与所述垂直传动机构连接的晶圆抓取装置；所述垂直传动机构驱动所述晶圆抓取装置做上下垂直直线运动；所述水平传动机构驱动所述垂直传动机构做水平直线运动，进而带动所述晶圆抓取装置做水平直线运动；在所述晶圆抓取装置水平直线运动 方向上的活动范围内布置有抛光中转台、清洗中转台及抛光装载台。
上述的化学机械平坦化设备，其中，该设备包括平行对称设置的两套及以上所述晶圆传输机械手。
上述的化学机械平坦化设备，其中，两套及以上所述晶圆传输机械手各自的晶圆抓取装置沿水平直线同时运动时分别位于高低不同的区域，以避免发生碰撞。
上述的化学机械平坦化设备，其中，所述抛光中转台、清洗中转台及抛光装载台沿直线依次布置；所述抛光中转台和所述清洗中转台两侧设置有清洗模块；所述抛光装载台两侧设置有抛光模块。
上述的化学机械平坦化设备，其中，所述晶圆传输机械手通过吊装设置在所述抛光中转台、清洗中转台及抛光装载台的上方。
本发明还提供了一种利用上述的化学机械平坦化设备进行晶圆传输的方法，其包括以下步骤：
S0：将待加工的晶圆首先被放置在抛光中转台上；
S1：水平传动机构带动晶圆抓取装置移动到抛光中转台上方，晶圆抓取装置沿着垂直传动机构下降到抛光中转台位置，抓取晶圆；
S2：晶圆抓取装置携带晶圆沿着垂直传动机构上升到一定高度，再由水平传动机构沿水平直线方向带动到某个抛光装载台位置上方；
S3：晶圆抓取装置携带晶圆沿着垂直传动机构下降到相应抛光装载台位置，释放晶圆；此时晶圆传输机械手可以再搬运其他晶圆；
S4：抛光装载台上的晶圆在抛光模块上完成抛光加工后，被重新放回抛光装载台上；
S5：晶圆抓取装置由水平传动机构带动到装载有抛光加工后晶圆的抛光装载台上方，晶圆抓取装置沿着垂直传动机构下降到抛光装载台位置，抓取晶圆；
S6：晶圆抓取装置携带晶圆沿着垂直传动机构上升到一定高度，由水平传动机构带动到清洗中转台上方，晶圆抓取装置沿着垂直传动机构下降到清洗中转台位置，释放晶圆；
S7：晶圆通过清洗中转台转移到清洗模块，完成抛光后清洗过程。
相对于现有技术，本发明具有以下有益效果：
本发明所提供的晶圆传输机械手可以将晶圆从抛光中转台直接传输到抛光装载台，由于无需中转，减少了晶圆的中转次数，缩短了晶圆传输时间，提高了传输效率，减少晶圆因传输产生损坏的概率。
本发明所提供的化学机械平坦化设备可以对称地布置两套上述晶圆传输机械手，彼此独立工作，可根据抛光需求选择仅使用一套晶圆传输机械手或两套同时使用，可按抛光工作量选择晶圆传输机械手的使用量，使晶圆传输机械手配置和使用更灵活，提升整机生产能力和生产效率。
为达到上述目的三，本发明采用的技术方案为一种晶圆平坦化单元，包括：抛光平台底架和位于其上方的抛光平台，抛光转台设置在抛光平台上，抛光摆臂带动抛光头在抛光转台上摆动，抛光液喷撒臂，修整器摆臂，晶圆装卸台架子以及位于其上方的晶圆装载台。上述部件中仅晶圆装卸台架子和晶圆装载台两个部件位于平坦化单元外罩的外部，其余部件都位于平坦化单元外罩的内部。平坦化单元外罩上设有移动门，抛光摆臂带动抛光头可通过移动门到晶圆装载台上方进行晶圆装卸。
抛光作业时移动门为关闭状态，晶圆装卸作业时移动门为打开状态，完成抛光作业后，通过移动门的开关来切断内外气体流通。
移动门的驱动方式可以为电机或气缸。
作为本发明的主要技术特点之一，上述抛光摆臂的驱动机构可以整体位于抛光平台的上方或下方。
当抛光摆臂的驱动机构整体位于抛光平台的上方时，上述驱动机构包括电机、减速机构、减速机构法兰，电机的定子连接减速机构的外壳，减速机构的外壳通过减速机构法兰连接抛光摆臂。
作为优选，电机的定子通过自身法兰和螺丝连接减速机构的外壳。
当抛光摆臂的驱动机构整体位于抛光平台的下方时，所述驱动机构包括电机、减速机构、减速机构法兰，电机的外壳和减速机构的外壳，电机转轴传动输入减速机构，减速机构通过减速机构法兰安装到传动轴壳下端面。
上述减速机构的输出轴通过联轴器传递到传动轴上，再通过摆臂压盖将转矩传递到抛光摆臂上。
与十字转塔机构的抛光结构相比，本发明的优势在于：
1，单元内含有独立的功能结构和加工区域，保证了工艺的稳定性，而 且本单元由于采用模块化设计，所以可以由客户按需求订制数量来自由定义CMP群组数量以满足不同的加工工艺要求。
2，在内部机构作业时，外部晶圆装载机构可以单独作业，因此减少了因装载晶圆而停止作业从而影响加工效率的问题。通过一个摆臂的结构就满足了原来既能抛光又能装卸晶圆的要求，简化了原来十字转塔加直线运动才能满足其加工和装载晶圆需求的复杂结构。
3，将装卸晶圆装置从内部加工区域分离，在中间增加自动移门防护隔离，以防加工区域的液体对已完成加工，在等待清洗的晶圆进行二次污染。
4，因结构优化占地面积小，因此净化车间平均每平方米的占地面积上的产出率大大增加。在群组作业时如果有其中单元模块出现故障进入维修的状态时，CMP群组中其它单元无需停止作业。
5，摆臂旋转的上相关电气原件的线缆扭转角度小于180度，是之前结构扭转角度的一半，减少了线缆因扭转疲劳引起的事故率。
附图的简要说明
图1为本发明化学机械平坦化设备(2×3阵列)的俯视图；
图2为图1所示化学机械平坦化设备的立体效果图；
图3为一个抛光单元的结构示意图；
图4为本发明的晶圆传输单元的结构示意图；
图5为一个具有双晶圆传输单元的实施例的立体效果图；
图6为一个具有可移动抛光装载台的实施例的立体效果图；
图7为本发明晶圆传输机械手一实施例的结构示意图；
图8为本发明化学机械平坦化设备一实施例的结构示意图；
图9为本发明相关设备的轴向视意图；
图10为实施例1抛光摆臂结构的半剖示意图；
图11为实施例2抛光摆臂结构的半剖示意图。
实现本发明的最佳方式
以下结合附图通过具体实施例对本发明作进一步的描述，这些实施例仅用于说明本发明，并不是对本发明保护范围的限制。
根据本发明的化学机械平坦化设备，包括由多个抛光单元组成的抛光模块和多个清洗模块。每个所述抛光单元包括工作台、抛光盘、抛光头、抛光臂、修整器、抛光液臂等。多个抛光单元一侧布置有多个抛光装载台。所述抛光盘、抛光头、抛光臂、修整器、抛光液臂按照工艺加工位置布置在工作台上。所述抛光臂可以携带抛光头在抛光盘与抛光装载台之间运动。所述修整器在抛光盘上以一定的压力修磨抛光盘。所述抛光液臂可以提供抛光所需要的化学药液。需要装载或者卸载晶圆时，抛光单元的抛光门打开，抛光臂携带抛光头旋转至抛光装载台位置。装卸晶圆结束后，抛光臂携带抛光头旋转至抛光盘位置进行抛光加工。这时抛光门闭合，防止抛光区液体和水汽外泄。在抛光加工过程中，抛光液臂流出抛光液，修整器对抛光盘进行修整工作。所述抛光盘以一定的速度旋转，所述抛光头同时以一定的速度自转。
跟所述抛光单元阵列连接有清洗模块。所属清洗模块排成两列或多列，构成抛光加清洗组合单元。在抛光单元阵列和清洗模块衔接处装有清洗中转台，进出抛光模块的晶圆都要经过清洗中转台暂存。
所述清洗模块中间装有机械手，可以将将晶圆在抛光单元和清洗模块之间传输。晶圆传输时要经过清洗中转台。
另外，本发明的化学机械平坦化设备一般还集成设备前端单元模块(EFEM)。清洗单元一般包括兆声波清洗、滚刷刷洗、晶圆干燥等。
本发明中，抛光模块为两列多组抛光单元组成的抛光单元阵列，两列多组抛光单元的所有抛光装载台在两列抛光单元的列方向纵向排列，但根据实际的需要，抛光单元阵列也可以扩展到2列多组。为便于介绍本发明的原理和本领域的技术人员实施本发明，以下的实施例说明都是基于2列3组的布局展开，特此说明。
图1、2所示分别为一个(2×3阵列)的化学机械平坦化设备俯视图和立体图，化学机械平坦化设备包括：抛光单元阵列100、清洗模块组合200和晶圆传输单元120。所述抛光单元阵列100由2列3行抛光单元110组合而成。
每一组抛光单元110包括，如图3所示，工作台115、抛光盘117、抛光头112、抛光臂111、修整器114、抛光液臂113、抛光门119等。
在抛光单元110与抛光装载台116之间设置抛光门119，需要装载或者 卸载晶圆时，抛光单元110的抛光门119打开，抛光臂111携带抛光头112旋转至抛光装载台116位置。装卸晶圆结束后，抛光臂111携带抛光头112旋转至抛光盘117位置进行抛光加工。这时抛光门119闭合，防止抛光区液体和水汽外泄。需要进行化学机械抛光的晶圆，通过清洗中转台118或其他起类似晶圆临时装卸区作用的区域进入抛光单元阵列100，化学机械抛光后的晶圆通过清洗中转台118离开抛光单元阵列100。晶圆在清洗中转台118与各个抛光装载台116之间的传输，以及晶圆在各个抛光装载台116之间的传输，通过晶圆传输单元120完成。
如图3所示，抛光盘117、抛光头112、抛光臂111、修整器114、抛光液臂113设置在工作台115上。抛光盘117通过轴承系统与工作台115连接，抛光盘117可以连续旋转。所述抛光臂111可以携带抛光头112在抛光盘117与抛光装载台116之间运动。在抛光过程中抛光臂111携带抛光头112在抛光盘117的范围内小幅摆动。在抛光过程中修整器114在抛光盘117的半径范围内往复运动，通过修整器114头部的旋转砂轮实现对抛光盘117的在线修整。在抛光过程中抛光液臂113会供给抛光液在在抛光盘117上。晶圆抛光结束后，抛光臂113携带抛光头112旋转至抛光装载台116的位置进行卸载晶圆，晶圆卸载后再重新装载另一片晶圆，进行下一个抛光循环。
如图4所示为作为晶圆传输模块的核心部件的晶圆传输单元120的示意图，包括：导向装置121，水平运动驱动装置122，垂直运动机构123，晶圆卡盘124，晶圆卡爪125等。这部分为晶圆传输模块的工作部，其通过晶圆传输模块的连接部(图中未示出)与化学机械平坦化设备连接。
在初始状态下，垂直运动机构123控制晶圆卡盘124处于高位，使得晶圆卡盘124可以沿着水平方向自由行走。当水平运动驱动装置122驱动垂直运动机构123沿导向装置121运行到清洗中转台118或者抛光装载台116的上方时，垂直运动机构123控制晶圆卡盘124下降到低位，晶圆卡盘124上装有可以张开和闭合的晶圆卡爪125。晶圆卡爪125，晶圆卡盘124在低位取放晶圆结束后，垂直运动机构123控制晶圆卡盘124上升到高位，水平运动驱动装置122驱动垂直运动机构123沿导向装置121运行到下一个清洗中转台118或者抛光装载台116的上方，垂直运动机构123控制晶圆卡盘124下降到低位，晶圆卡盘124上的晶圆卡爪125进行取放晶圆操作。如此往复运 动，使得晶圆可以在清洗中转台118和各个抛光装载台116之间实现传递。为了提高晶圆的传输效率，如图4所示，晶圆传输单元120中的晶圆卡盘124设计成翻转结构，在晶圆卡盘124的两面布置两套晶圆卡爪125机构。此时实例可以有效减少晶圆传输单元120的行走路线，增加晶圆传输单元120的传输能力。因为抛光装载台上方的晶圆传输单元可以将晶圆从一个抛光装载台转移到另一个抛光装载台，或者将晶圆从抛光模块拿进或者拿出，因为晶圆传输单元布置在所述抛光装载台的上方，所以抛光头在抛光装载台进行装载或者卸载晶圆时，晶圆传输单元可以随时穿越抛光单元而不会受到干扰，构成本发明的最主要优点之一。
如图1所示，经过化学机械抛光后的晶圆，被晶圆传输单元120放在清洗中转台118上，由清洗模块200的机械手将晶圆从清洗中转台118上转移到清洗模块200进行抛光后的清洗及干燥处理。所述清洗模块200布置左右两个，根据需要，清洗机械手可以选择将晶圆放至任一个清洗模块200。
作为本发明另一个实施例，晶圆传输单元120可以设计成两套或者两套以上，在沿两列抛光单元的列方向上形成级联，以满足2列多组抛光单元阵列100的产能需要。
如图5所示，晶圆的传输由晶圆传输单元120a和晶圆传输单元120b协同实现，晶圆传输单元120a和晶圆传输单元120b可以共用一个导向装置121a，此外晶圆传输单元120a还包括水平运动驱动装置122a、垂直运动机构123a、晶圆卡盘124a及设置在晶圆卡盘124a上的晶圆卡爪；晶圆传输单元120b还包括水平运动驱动装置122b、垂直运动机构123b、晶圆卡盘124b及设置在晶圆卡盘124b上的晶圆卡爪。水平运动驱动装置122a和水平运动驱动装置122b布置在导向装置121a的两侧，并仅在导向装置121a的中部区域有活动覆盖的重合。传输单元120a负责晶圆在清洗中转台118、抛光装载台116f、抛光装载台116e、抛光装载台116d之间的传输，传输单元120b负责晶圆在抛光装载台116d、抛光装载台116c、抛光装载台116b、抛光装载台116a之间传输。传输单元120a和传输单元120b可以在不同的时间到达抛光装载台116d的位置，以实现晶圆在整个抛光单元阵列100中的流转。
作为又一个实施例，如图6所示，一个(2×3阵列)的化学机械平坦化设备设置3个可移动的抛光装载台，分别为抛光装载台116a、抛光装载台 116b、抛光装载台116c。抛光装载台116a负责抛光单元110a和抛光单元110b；抛光装载台116b负责抛光单元110c和抛光单元110d；抛光装载台116c负责抛光单元110e和抛光单元110f。该化学机械平坦化设备由一个晶圆传输单元120a进行晶圆的传输，该晶圆传输单元120a包括导向装置121a、水平运动驱动装置122a、垂直运动机构123a、晶圆卡盘124a及设置在晶圆卡盘124a上的晶圆卡爪。
上述最后两个实施例集中体现了本发明的晶圆传输单元配置的灵活性，以及晶圆传输单元与所服务的抛光装载台的配对时的灵活性，属于本发明的显著优点之一。
本发明中采用抛光单元排成两列或多列、晶圆传输单元居中的布局有助于减少传输的行程，化学机械平坦化设备加工效率同比大幅提升，而且通过采用模块化的布局，设备的整体布局更加灵活，适应性也更强。
如图7和图8所示，本发明提供了一种化学机械平坦化设备，其中晶圆传输模块包括至少一套晶圆传输机械手310；该晶圆传输机械手310包括：水平传动机构311、与所述水平传动机构311连接的垂直传动机构312及与所述垂直传动机构312连接的晶圆抓取装置313；所述垂直传动机构312驱动所述晶圆抓取装置313做上下垂直直线运动；所述水平传动机构311驱动所述垂直传动机构312做水平直线运动，进而带动所述晶圆抓取装置313做水平直线运动；同时在所述晶圆传输机械手310的晶圆抓取装置313水平直线运动方向上所覆盖的活动范围内布置有抛光中转台101、清洗中转台118及抛光装载台116。晶圆传输机械手310的晶圆抓取装置313可以到达沿直线布置的上述抛光中转台101、清洗中转台118及抛光装载台116的各个位置。
通过上述设置，即可实现晶圆401在抛光中转台101、抛光装载台116和清洗中转台118之间，以及在抛光模块各个抛光装载台116之间整个过程的传输；因而在整合传片机械手和湿片传输机械手的同时，还完成晶圆401在各个抛光装载台116之间的晶圆401传输。因为可以将晶圆401从抛光中转台101直接传输到抛光装载台116，由于无需中转，减少了晶圆401的中转次数，缩短了晶圆401传输时间，提高了传输效率，减少晶圆401因传输产生损坏的概率。
在上述实施例的基础上，上述抛光中转台101、清洗中转台118及抛光装载台116可以沿直线按次序依次布置，当然也可以根据实际生产需求具体布置，以提高传输效率为目的。作为化学机械平坦化设备的具体布局的一实施例中，所述抛光中转台101和所述清洗中转台118两侧分别设置有至少一个清洗模块。例如在如图8所示的实施例中，清洗中转台118和抛光中转台101两侧的清洗模块分别设置为包含第一清洗单元504，第二清洗单元503、第三清洗单元502及干燥单元501的组合。所述抛光装载台116两侧设置有抛光模块，该抛光模块为2×3阵列排布的抛光单元110；抛光装载台116可以根据生产情况选择合适的数量。为了实现更简单更方便的布置，所述晶圆传输机械手310可以通过吊装或其他类似方式设置在所述抛光中转台101、清洗中转台118及抛光装载台116的上方。
为了提升整机生产能力和生产效率，该设备可以包括平行对称设置的两套所述晶圆传输机械手310，以同时实现晶圆401的传输和取放。两套晶圆传输机械手310可以独立工作，互不影响。在水平直线运动过程中，晶圆抓取装置313的定位位置可以设置成高低两个区域；当其位于低区域的位置时应设置成高于抛光单元110中的抛光头等可能存在的障碍物，以避免发生碰撞。两套所述晶圆传输机械手310各自的晶圆抓取装置313沿水平直线同时运动时分别选择位于高低不同的区域，以避免晶圆抓取装置313之间发生碰撞，且两者任一都可选择位于高区域或低区域，具体可根据实际需要进行设置。此外为防止晶圆抓取装置313相撞，两套所述晶圆传输机械手310在工作状态时各自的垂直传动机构312之间的距离大于晶圆401的直径。
本发明中的晶圆传输机械手310可以通过晶圆抓取装置313实现晶圆401的取放，并可以通过水平传动机构311和垂直传动机构312的配合实现晶圆401在水平直线方向上各个位置的传输。通过水平传动机构311和垂直传动机构312的具体尺寸设计，可以根据实际情况改变晶圆抓取装置313升降及水平直线运动的活动范围。
本发明中的水平传动机构311和垂直传动机构312一般由水平/垂直导向装置/机构加水平/垂直驱动装置组成。水平/垂直导向装置可以是直线滚动导轨、直线滑动导轨、直线滚动轴承等形式；水平/垂直驱动装置可以采用直线电机、滚珠丝杠、同步齿形带、钢带等方式。本发明的创新之处在于上述晶 圆传输机械手310的结构和位置关系所对传统晶圆401传输方式的改进。至于水平传动机构311和垂直传动机构312的具体结构可以采用现有技术实现，只要实现晶圆抓取装置313能够做水平直线运动和上下垂直直线运动即可。具体地，可以是上述导向机构和驱动装置的具体实施方式的任意组合，皆能够达到本发明所实现的上述有益技术效果。
在一个更为具体的实施例中，所述水平传动机构311包括水平导向装置3111、水平驱动装置3112和水平运动平台3113；所述水平驱动装置3112驱动所述水平运动平台3113沿水平导向装置3111做水平直线运动。所述垂直传动机构312包括垂直驱动装置3122和与所述水平运动平台3113连接的垂直导向装置3121；所述垂直驱动装置3122驱动所述晶圆抓取装置313沿垂直导向装置3121做上下垂直直线运动。所述晶圆抓取装置313包括卡爪3131和与所述垂直驱动装置3122连接的推动爪3132；所述推动爪3132驱动所述卡爪3131水平移动，并与所述卡爪3131配合以取放晶圆401。
本发明所提供的化学机械平坦化设备的创新之处在于使用了本发明所提供的晶圆传输机械手310，并在晶圆抓取装置313水平直线运动方向上的活动范围内布置有抛光中转台101、清洗中转台118及抛光装载台116。在整合传片机械手和湿片传输机械手的同时，还完成晶圆401在各个抛光装载台116之间的晶圆401传输。可根据抛光需求选择仅使用一套晶圆传输机械手或更多套同时使用，可按抛光工作量选择晶圆传输机械手的使用量，使晶圆传输机械手配置和使用更灵活，提升整机生产能力和生产效率。
本发明还提供了利用上述化学机械平坦化设备在晶圆401实际加工过程的具体进行晶圆传输的方法，具体包含如下步骤：
S0：将待加工的晶圆401首先被放置在抛光中转台101上；
S1：水平传动机构311带动晶圆抓取装置313移动到抛光中转台101上方，晶圆抓取装置313沿着垂直传动机构312下降到抛光中转台101位置，抓取晶圆401；
S2：晶圆抓取装置313携带晶圆401沿着垂直传动机构312上升到一定高度，再由水平传动机构311沿水平直线方向带动到某个抛光装载台116位置上方；
S3：晶圆抓取装置313携带晶圆401沿着垂直传动机构312下降到相应 抛光装载台116位置，释放晶圆401；这时，晶圆传输机械手310可以再搬运其他晶圆401；
S4：抛光装载台116上的晶圆401在抛光模块中的抛光单元110上完成抛光加工后，被重新放回抛光装载台116上；
S5：晶圆抓取装置313由水平传动机构311带动到该抛光装载台116上方，晶圆抓取装置313沿着垂直传动机构312下降到抛光装载台116位置，抓取晶圆401；
S6：晶圆抓取装置313携带晶圆401沿着垂直传动机构312上升到一定高度，由水平传动机构311带动到清洗中转台118上方，晶圆抓取装置313沿着垂直传动机构312下降到清洗中转台118位置，释放晶圆401；
S7：晶圆401通过清洗中转台118转移到清洗模块以进行抛光后清洗流程，分别通过第一清洗单元504，第二清洗单元503，第三清洗单元502和干燥单元501，完成抛光后清洗过程。在S5步骤后，晶圆抓取装置313也可以携带晶圆401沿着垂直传动机构312上升到一定高度，由水平传动机构311带动到其它抛光装载台116上方，以相同的方式释放晶圆401，完成再一次抛光加工。
此外，包含多套晶圆传输机械手310的化学机械平坦化设备的使用方法和步骤与上述相同。
综上所述，本发明所提供的晶圆传输机械手可以将晶圆从抛光中转台直接传输到抛光装载台，由于无需中转，减少了晶圆的中转次数，缩短了晶圆传输时间，提高了传输效率，减少晶圆因传输产生损坏的概率。
本发明所提供的化学机械平坦化设备可以对称地布置两套上述晶圆传输机械手，彼此独立工作，可根据抛光需求选择仅使用一套晶圆传输机械手或两套同时使用，可按抛光工作量选择晶圆传输机械手的使用量，使晶圆传输机械手配置和使用更灵活，提升整机生产能力和生产效率。
本发明晶圆平坦化单元的轴向示意图如图9所示，包括晶圆装卸台架子1、晶圆装载台2、抛光摆臂3、移动门4、平坦化单元外罩5、抛光液喷撒臂6、抛光头7、修整器摆臂8、抛光平台9、抛光平台底架10。抛光时，抛光摆臂3带着抛光头7并配合抛光液喷撒臂6和修整器摆臂8共同完成一次抛光作业。移动门4打开后，抛光摆臂3带着抛光头7和装载着的晶圆摆动到晶圆装载台2上方 进行卸载。卸载完毕后摆动到内部，同时移动门4关闭，接着进行第二次抛光作业。
为便于本领域的技术人员实施本发明，现提供以下两个实施例。
实施例1：如图10所示，抛光摆臂3的驱动机构放在抛光平台9的上方，驱动机构包含：电机20的转子连接减速机构12，电机20的定子连接减速机构12的外壳，减速机构12的外壳通过减速机构法兰13连接抛光摆臂3，抛光摆臂3的一边装有抛光头7，摆臂3的另一边内部上端含有顶部轴承18，下端含有下轴承16来保证摆臂3的回转精度，顶部轴承18的内外圈通过自带的法兰螺钉孔和固定轴22以及抛光摆臂3连接，下轴承16的轴向窜动通过轴承内圈螺母15以及抛光摆臂3的轴肩阻挡。电机20的转子连接减速机构12，减速机构12的输出轴通过联轴器14连接固定轴22。
工作时，电机20的转子转动，通过减速机构12输出，减速机构12的输出轴连接联轴器14，联轴器14和固定轴4通过键19连接，由于固定轴4无法转动，因此导致减速机构12的输出轴也固定无法转动，同时电机20的转子也因此无法转动，但是减速机构12的外壳由于没有固定，因此整个传动关系为电机20的外壳带着减速机构12的外壳和抛光摆臂3一起转动，从而实现本机构的抛光时的摆动和装卸晶圆时的摆动定位两个动作。所有的动作是在平坦化单元外罩5内进行，而晶圆装载台2可以随时和外部机构进行晶圆装卸工作，并不影响内部抛光机构的运行。
实施例2：如图11所示，抛光摆臂3的驱动机构放在抛光平台9的下方，驱动机构的连接关系如下：电机20的外壳用螺钉和减速机构12的外壳相连接，电机20转轴传动输入减速机构12，减速机构12通过减速机构法兰31安装到传动轴壳27下端面。
工作时，电机20的转子连接减速机构12的输出轴，电机20的定子连接减速机构12的外壳，电机20的转矩通过减速机构12的输出轴输出，然后通过联轴器14传递到传动轴25上，同时传动轴25的径向和轴向通过两组轴承26固定，两组轴承26之间的窜动通过轴承隔圈29来阻挡，而两组轴承26的内圈上下窜动分别通过上成对轴承锁母24和下成对轴承锁母28来阻挡，两组轴承26的外圈的向外窜动则通过上轴承压盖17和下轴承压盖30来阻止。传动轴25通过摆臂压盖23将转矩传递到抛光摆臂3上，实现该装置使晶圆在抛光转台11上抛光 的摆动和装卸晶圆时的定位。所有的动作是在平坦化单元外罩5内进行，而晶圆装载台2可以随时和外部机构进行晶圆装卸工作，并不影响内部抛光机构的运行。
本发明提供了一种可单独作业可集群作业的CMP设备单元(化学机械平坦化单元)。单元内含有独立的功能结构和加工区域，可保证工艺的稳定性。而且本单元由于采用模块化设计，可以由客户按需求订制数量，自由定义CMP群组数量，以满足不同的加工工艺要求。
以上具体实施方式的描述并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (22)

  1. 一种化学机械平坦化设备，包括抛光模块、清洗模块和晶圆传输模块，清洗模块对抛光后的晶圆进行清洗，其特征在于，所述抛光模块包含两列抛光单元阵列，每列抛光单元包含两组或多组抛光单元，两列抛光单元阵列对应的抛光装载台在位于抛光单元阵列的列方向上纵向排列，所述清洗模块排成两列，对应两列抛光单元阵列，所述晶圆传输模块的工作部位于沿纵向排列的抛光装载台的垂直上方，完成晶圆在其他装卸区与所述抛光装载台以及所述抛光装载台之间的传输。
  2. 如权利要求1所述的化学机械平坦化设备，其特征在于，所述其他装卸区为清洗中转台，进出抛光模块的晶圆要经过清洗中转台暂存。
  3. 如权利要求1所述的化学机械平坦化设备，其特征在于，所述晶圆传输模块包括一组或多组晶圆传输单元，每组晶圆传输单元包括导向装置、水平运动驱动装置、垂直运动机构、晶圆卡盘和晶圆卡爪，水平运动驱动装置驱动垂直运动机构沿导向装置水平方向滑动，垂直运动机构与晶圆卡盘连接，并能够控制晶圆卡盘在高位和低位两个模式下工作，晶圆卡爪安装于晶圆卡盘上，能够做张开和闭合操作。
  4. 如权利要求3所述的化学机械平坦化设备，其特征在于，所述多组晶圆传输单元中的每组晶圆传输单元沿两列抛光单元的列方向上形成级联，完成晶圆在其他装卸区与各个抛光装载台以及各个抛光装载台之间的传输，所述多组晶圆传输单元互相协作，实现晶圆在整个抛光单元阵列中的流转。
  5. 如权利要求3所述的化学机械平坦化设备，其特征在于，所述晶圆卡盘为翻转结构，在其两面布置两套晶圆卡爪机构。
  6. 如权利要求1所述的化学机械平坦化设备，其特征在于，所述抛光装载台能够在抛光单元阵列的列方向上纵向移动，一个抛光装载台对应一个以上的抛光单元。
  7. 如权利要求1所述的化学机械平坦化设备，其特征在于，在所述抛光单元与抛光装载台之间设置可开启闭合的抛光门。
  8. 一种利用权利要求3所述的化学机械平坦化设备进行晶圆传输的方法，其 特征在于，包含以下步骤：
    S1：在初始状态下，垂直运动机构控制晶圆卡盘处于高位，使得晶圆卡盘能够沿着水平方向自由行走；
    S2：当水平运动驱动装置驱动垂直运动机构沿导向装置运行到清洗中转台或者抛光装载台的上方时，垂直运动机构控制晶圆卡盘下降到低位，晶圆卡盘上安装的晶圆卡爪抓取晶圆；
    S3：随后垂直运动机构控制晶圆卡盘上升到高位，水平运动驱动装置驱动垂直运动机构沿导向装置运行到下一个清洗中转台或者抛光装载台的上方；
    S4：垂直运动机构控制晶圆卡盘下降到低位，晶圆卡盘上的晶圆卡爪进行释放晶圆操作；
    S5：重复以上步骤，使得晶圆能够在清洗中转台和各个抛光装载台之间实现传递。
  9. 如权利要求1所述的化学机械平坦化设备，其特征在于，所述晶圆传输模块包括至少一套晶圆传输机械手；所述晶圆传输机械手包括：水平传动机构、与所述水平传动机构连接的垂直传动机构及与所述垂直传动机构连接的晶圆抓取装置；所述垂直传动机构驱动所述晶圆抓取装置做上下垂直直线运动；所述水平传动机构驱动所述垂直传动机构做水平直线运动，进而带动所述晶圆抓取装置做水平直线运动；在所述晶圆抓取装置水平直线运动方向上的活动范围内布置有抛光中转台、清洗中转台及抛光装载台。
  10. 如权利要求9所述的化学机械平坦化设备，其特征在于，该设备包括平行对称设置的两套及以上所述晶圆传输机械手。
  11. 如权利要求10所述的化学机械平坦化设备，其特征在于，两套及以上所述晶圆传输机械手各自的晶圆抓取装置沿水平直线同时运动时分别位于高低不同的区域，以避免发生碰撞。
  12. 如权利要求9所述的化学机械平坦化设备，其特征在于，所述抛光中转台、清洗中转台及抛光装载台沿直线依次布置；所述抛光中转台和所述清洗中转台两侧设置有清洗模块；所述抛光装载台两侧设置有抛光模块。
  13. 如权利要求9所述的化学机械平坦化设备，其特征在于，所述晶圆传输机械手通过吊装设置在所述抛光中转台、清洗中转台及抛光装载台的上方。
  14. 一种利用权利要求9所述的化学机械平坦化设备进行晶圆传输的方法，其特征在于，包括以下步骤：
    S0：将待加工的晶圆首先放置在抛光中转台上；
    S1：水平传动机构带动晶圆抓取装置移动到抛光中转台上方，晶圆抓取装置沿着垂直传动机构下降到抛光中转台位置，抓取晶圆；
    S2：晶圆抓取装置携带晶圆沿着垂直传动机构上升到一定高度，再由水平传动机构沿水平直线方向带动到某个抛光装载台位置上方；
    S3：晶圆抓取装置携带晶圆沿着垂直传动机构下降到相应抛光装载台位置，释放晶圆；此时晶圆传输机械手可以再搬运其他晶圆；
    S4：抛光装载台上的晶圆在抛光模块上完成抛光加工后，被重新放回抛光装载台上；
    S5：晶圆抓取装置由水平传动机构带动到装载有抛光加工后晶圆的抛光装载台上方，晶圆抓取装置沿着垂直传动机构下降到抛光装载台位置，抓取晶圆；
    S6：晶圆抓取装置携带晶圆沿着垂直传动机构上升到一定高度，由水平传动机构带动到清洗中转台上方，晶圆抓取装置沿着垂直传动机构下降到清洗中转台位置，释放晶圆；
    S7：晶圆通过清洗中转台转移到清洗模块，完成抛光后清洗过程。
  15. 一种晶圆平坦化单元，包括：抛光平台底架，位于抛光平台底架上方的抛光平台，设置在抛光平台上的抛光转台，带动抛光头在抛光转台上摆动的抛光摆臂，抛光液喷撒臂，修整器摆臂，晶圆装卸台架子以及位于晶圆装卸台架子上方的晶圆装载台，其特征在于，所述的晶圆装卸台架子和晶圆装载台位于平坦化单元外罩的外部，平坦化单元外罩上设有移动门，抛光摆臂带动抛光头可通过移动门到晶圆装载台上方进行晶圆装卸。
  16. 如权利要求15所述的晶圆平坦化单元，其特征在于，抛光作业时移动门为关闭状态，晶圆装卸作业时移动门为打开状态。
  17. 如权利要求15所述的晶圆平坦化单元，其特征在于，所述移动门的驱动方式为电机或气缸。
  18. 如权利要求15所述的晶圆平坦化单元，其特征在于，所述抛光摆臂的驱动机构整体位于抛光平台的上方或下方。
  19. 如权利要求18所述的晶圆平坦化单元，其特征在于，所述驱动机构包括电机、减速机构、减速机构法兰，电机的定子连接减速机构的外壳，减速机构的外壳通过减速机构法兰连接抛光摆臂。
  20. 如权利要求19所述的晶圆平坦化单元，其特征在于，所述电机的定子通过自身法兰和螺丝连接减速机构的外壳。
  21. 如权利要求18所述的晶圆平坦化单元，其特征在于，所述驱动机构包括电机、减速机构、减速机构法兰，电机的外壳和减速机构的外壳，电机转轴传动输入减速机构，减速机构通过减速机构法兰安装到传动轴壳下端面。
  22. 如权利要求21所述的晶圆平坦化单元，其特征在于，所述减速机构的输出轴通过联轴器传递到传动轴上，再通过摆臂压盖将转矩传递到抛光摆臂上。
PCT/CN2019/101581 2018-09-07 2019-08-20 一种化学机械平坦化设备和晶圆传输方法、晶圆平坦化单元 WO2020048311A1 (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020217010344A KR102533567B1 (ko) 2018-09-07 2019-08-20 화학, 기계적 평탄화 장비와 웨이퍼 이송방법, 웨이퍼 평탄화 유닛
SG11202103477TA SG11202103477TA (en) 2018-09-07 2019-08-20 Chemical-mechanical planarization device, wafer transfer method and wafer planarization unit
US17/274,183 US12251785B2 (en) 2018-09-07 2019-08-20 Chemical mechanical planarization equipment, wafer transfer method, and wafer planarization unit

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
CN201811043848.7A CN109015314A (zh) 2018-09-07 2018-09-07 一种化学机械平坦化设备
CN201811043848.7 2018-09-07
CN201811466539.0A CN109262444A (zh) 2018-12-03 2018-12-03 晶圆平坦化单元
CN201811466539.0 2018-12-03
CN201910481448.2 2019-06-04
CN201910481448.2A CN110026879B (zh) 2018-09-07 2019-06-04 一种化学机械平坦化设备和晶圆传输方法

Publications (1)

Publication Number Publication Date
WO2020048311A1 true WO2020048311A1 (zh) 2020-03-12

Family

ID=69721596

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/101581 WO2020048311A1 (zh) 2018-09-07 2019-08-20 一种化学机械平坦化设备和晶圆传输方法、晶圆平坦化单元

Country Status (4)

Country Link
US (1) US12251785B2 (zh)
KR (1) KR102533567B1 (zh)
SG (1) SG11202103477TA (zh)
WO (1) WO2020048311A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023009116A1 (en) * 2021-07-28 2023-02-02 Applied Materials, Inc. High throughput polishing modules and modular polishing systems
CN216542663U (zh) * 2021-09-07 2022-05-17 杭州众硅电子科技有限公司 晶圆抛光系统
CN113910099A (zh) * 2021-09-07 2022-01-11 杭州众硅电子科技有限公司 一种晶圆抛光系统
TWI834448B (zh) * 2021-12-31 2024-03-01 大陸商杭州眾硅電子科技有限公司 一種晶圓拋光系統及晶圓傳輸方法
CN115565927A (zh) * 2022-07-21 2023-01-03 杨志军 一种芯片抓取结构及芯片加工设备
KR102697317B1 (ko) * 2023-08-21 2024-08-23 주식회사 스맥 반도체 웨이퍼 시편 폴리싱 및 클리닝 장치
CN118431132B (zh) * 2024-07-04 2024-11-12 江苏元夫半导体科技有限公司 晶圆暂存装置和晶圆清洗方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100334691C (zh) * 2002-05-17 2007-08-29 株式会社荏原制作所 衬底加工设备和衬底加工方法
KR20110121511A (ko) * 2010-04-30 2011-11-07 삼성전자주식회사 화학 기계식 연마시스템 및 이의 기판 이송 시스템
US8795032B2 (en) * 2008-06-04 2014-08-05 Ebara Corporation Substrate processing apparatus, substrate processing method, substrate holding mechanism, and substrate holding method
CN205122542U (zh) * 2014-10-24 2016-03-30 K.C.科技股份有限公司 晶元处理装置
CN206105604U (zh) * 2016-09-14 2017-04-19 天津华海清科机电科技有限公司 化学机械抛光系统
CN109015314A (zh) * 2018-09-07 2018-12-18 杭州众硅电子科技有限公司 一种化学机械平坦化设备
CN109262444A (zh) * 2018-12-03 2019-01-25 杭州众硅电子科技有限公司 晶圆平坦化单元

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5738574A (en) 1995-10-27 1998-04-14 Applied Materials, Inc. Continuous processing system for chemical mechanical polishing
US5904611A (en) * 1996-05-10 1999-05-18 Canon Kabushiki Kaisha Precision polishing apparatus
US5947802A (en) * 1997-11-05 1999-09-07 Aplex, Inc. Wafer shuttle system
KR100710915B1 (ko) * 1999-03-05 2007-04-26 가부시키가이샤 에바라 세이사꾸쇼 폴리싱장치
US6358128B1 (en) * 1999-03-05 2002-03-19 Ebara Corporation Polishing apparatus
US20020071756A1 (en) * 2000-12-13 2002-06-13 Gonzalez Jose R. Dual wafer edge gripping end effector and method therefor
JP2003163181A (ja) * 2001-11-28 2003-06-06 Disco Abrasive Syst Ltd 加工機
JP4197103B2 (ja) * 2002-04-15 2008-12-17 株式会社荏原製作所 ポリッシング装置
JP2004106084A (ja) * 2002-09-17 2004-04-08 Ebara Corp ポリッシング装置及び基板処理装置
JP4464113B2 (ja) * 2003-11-27 2010-05-19 株式会社ディスコ ウエーハの加工装置
JP4757580B2 (ja) * 2005-09-16 2011-08-24 株式会社荏原製作所 研磨方法及び研磨装置、並びに研磨装置制御用プログラム
US7198548B1 (en) * 2005-09-30 2007-04-03 Applied Materials, Inc. Polishing apparatus and method with direct load platen
US7335092B1 (en) * 2006-10-27 2008-02-26 Novellus Systems, Inc. Carrier head for workpiece planarization/polishing
JP5406676B2 (ja) * 2009-11-10 2014-02-05 株式会社ディスコ ウエーハの加工装置
JP6239417B2 (ja) * 2014-03-24 2017-11-29 株式会社荏原製作所 基板処理装置
JP6259366B2 (ja) * 2014-07-09 2018-01-10 株式会社荏原製作所 研磨装置
CN105870045B (zh) * 2016-05-04 2018-05-18 中国电子科技集团公司第四十五研究所 晶圆搬运装置及使用方法
JP6727044B2 (ja) 2016-06-30 2020-07-22 株式会社荏原製作所 基板処理装置
KR20180084572A (ko) 2017-01-17 2018-07-25 주식회사 케이씨텍 웨이퍼 처리 시스템
TWM540388U (zh) * 2017-01-17 2017-04-21 Phoenix Silicon Int Corp 晶圓裝卸裝置
JP7339858B2 (ja) * 2019-11-08 2023-09-06 株式会社ディスコ 加工装置及び板状ワークの搬入出方法
CN112207655B (zh) * 2020-10-12 2022-07-15 华海清科股份有限公司 一种具有移动机械手的晶圆磨削设备

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100334691C (zh) * 2002-05-17 2007-08-29 株式会社荏原制作所 衬底加工设备和衬底加工方法
US8795032B2 (en) * 2008-06-04 2014-08-05 Ebara Corporation Substrate processing apparatus, substrate processing method, substrate holding mechanism, and substrate holding method
KR20110121511A (ko) * 2010-04-30 2011-11-07 삼성전자주식회사 화학 기계식 연마시스템 및 이의 기판 이송 시스템
CN205122542U (zh) * 2014-10-24 2016-03-30 K.C.科技股份有限公司 晶元处理装置
CN206105604U (zh) * 2016-09-14 2017-04-19 天津华海清科机电科技有限公司 化学机械抛光系统
CN109015314A (zh) * 2018-09-07 2018-12-18 杭州众硅电子科技有限公司 一种化学机械平坦化设备
CN110026879A (zh) * 2018-09-07 2019-07-19 杭州众硅电子科技有限公司 一种化学机械平坦化设备和晶圆传输方法
CN109262444A (zh) * 2018-12-03 2019-01-25 杭州众硅电子科技有限公司 晶圆平坦化单元

Also Published As

Publication number Publication date
KR20210054566A (ko) 2021-05-13
KR102533567B1 (ko) 2023-05-17
US12251785B2 (en) 2025-03-18
US20210260716A1 (en) 2021-08-26
SG11202103477TA (en) 2021-05-28

Similar Documents

Publication Publication Date Title
CN110026879B (zh) 一种化学机械平坦化设备和晶圆传输方法
WO2020048311A1 (zh) 一种化学机械平坦化设备和晶圆传输方法、晶圆平坦化单元
US6878044B2 (en) Polishing apparatus
CN110815035B (zh) 一种结合研磨和单晶圆清洗模组的化学机械平坦化设备
US20210323119A1 (en) High throughput polishing modules and modular polishing systems
CN114147611B (zh) 一种晶圆抛光系统
CN109304670A (zh) 一种柔性的抛光装卸部件模块
TWI731281B (zh) 包含可移動裝卸模組的研磨裝卸構件模組及其晶圓傳輸方法
CN110103119A (zh) 一种抛光装卸部件模块
TWI825934B (zh) 晶圓拋光系統
CN208744518U (zh) 一种包含可移动装卸模块的抛光装卸部件模块
EP1594653A2 (en) Apparatus and method for polishing semiconductor wafers using one or more pivotable load-and-unload cups
TWI717119B (zh) 化學機械平坦化晶圓傳輸設備及其使用方法
JP2002016028A (ja) 基板処理装置
EP4377047A1 (en) High throughput polishing modules and modular polishing systems

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19858103

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20217010344

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 19858103

Country of ref document: EP

Kind code of ref document: A1

WWG Wipo information: grant in national office

Ref document number: 17274183

Country of ref document: US