US7897920B2 - Radiation sensor device and method - Google Patents
Radiation sensor device and method Download PDFInfo
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- US7897920B2 US7897920B2 US11/436,245 US43624506A US7897920B2 US 7897920 B2 US7897920 B2 US 7897920B2 US 43624506 A US43624506 A US 43624506A US 7897920 B2 US7897920 B2 US 7897920B2
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/041—Mountings in enclosures or in a particular environment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/041—Mountings in enclosures or in a particular environment
- G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0881—Compact construction
- G01J5/0884—Monolithic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/804—Containers or encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
Definitions
- This invention relates to an improved radiation sensor device and method using industry standard package outlines.
- IR sensors such as infrared (IR) sensors include an infra-red sensing element micro-machined in the active surface of an integrated circuit chip and mounted in a windowed metal cap whose window allows the sensor to be exposed to IR radiation to be sensed. While this approach is satisfactory it is also quite expensive.
- Conventional integrated circuit packaging employs a lead frame which together with the integrated circuit chip is encapsulated in epoxy, e.g. Sumitomo G700.
- the lead frame typically includes a paddle supporting the integrated circuit chip and leads for receiving wire bonds for the integrated circuit chip. This is less expensive than the packaging used in conventional radiation sensing devices, but the plastic is generally not transparent to the radiation to be sensed, e.g., infrared and so is unsuitable for use with integrated circuit chips which have radiation sensors.
- the invention results from the realization that an improved radiation sensing device and package which can use industry-standard packaging outlines and produce enhanced operation, can be achieved by attaching a cap to an integrated circuit chip, having a radiation sensor on a surface of the said chip, with the cap spaced from and covering the radiation sensor, at least one of the cap and integrated circuit chip having at least a portion proximate the radiation sensor transparent to the radiation to be sensed.
- This invention features a radiation sensor device including an integrated circuit chip with an integral radiation sensor on a surface of the integrated circuit chip.
- a cap is attached to the integrated circuit chip and spaced from and covering the radiation sensor.
- At least one of the cap and integrated circuit chip have at least a portion proximate the radiation sensor which is transparent to the radiation to be sensed.
- the radiation sensor may be on the active surface of the integrated circuit chip and the cap may include a radiation transparent portion.
- the radiation sensor may be on the inactive surface of the integrated circuit chip and the integrated circuit chip may include a radiation transparent portion.
- the integrated circuit chip may include solder bump connections on its active surface or on its inactive surface.
- the cap and the integrated circuit chip with the radiation sensor may be disposed in an encapsulant with the inactive surface exposed at a boundary of the encapsulant. At least a portion of the integrated circuit proximate the radiation sensor may be transparent to the radiation to be sensed.
- the cap and the integrated circuit chip with the radiation sensor may be disposed in an encapsulant with the cap exposed at the boundary of the encapsulant.
- At least a portion of the cap proximate the radiation sensor may be transparent to the radiation being sensed.
- the cap and integrated circuit chip with the radiation sensor may be disposed in an encapsulant along with the lead frame.
- the lead frame may include an exposed paddle or a hidden paddle.
- the integrated circuit chip may be flip chip attached to the lead frame.
- the cap and the integrated circuit chip with the radiation sensor may be disposed in an encapsulant.
- the encapsulant may include a recess.
- the cap may be exposed in the recess.
- the integrated circuit chip may be exposed in the recess.
- the pre-molded package may be filled with an encapsulant up to and not covering the cap.
- the lid may be a lid above the cap having at least a portion transparent to the radiation to be sensed.
- the sensor may be an infrared radiation sensor.
- the transparent portion may be transparent to infrared radiation.
- the cap may provide a vacuum at the radiation sensor.
- the cap may include a lens.
- the encapsulant may be plastic.
- the encapsulant may be epoxy.
- This invention also features a radiation sensor device including an integrated circuit chip with an integral radiation sensor on a surface of the integrated circuit chip.
- a cap is attached to the integrated circuit chip and spaced from and covering the radiation sensor.
- At least one of the cap and integrated circuit chip have at least a portion proximate the radiation sensor which is transparent to the radiation to be sensed.
- the encapsulant may include plastic.
- the invention also features a method of forming a radiation sensor device including attaching a cap to an integrated circuit chip having a radiation sensor on its surface, with the cap spaced from and covering the radiation sensor.
- the method also includes encapsulating the cap and integrated circuit chip with the radiation sensor in an encapsulant with a transparent portion of at least one of the cap and integrated circuit chip proximate the radiation sensor being exposed at the boundary of the encapsulant.
- the encapsulant may include a plastic.
- the vacuum may be formed about the radiation sensor in the cap.
- a sacrificial layer may be formed over a transparent portion and etched away to remove any mold bleed occurring at the transparent portion.
- the complaint layer may be peripheral with a void.
- FIG. 1 is a schematic side sectional diagram of an improved integrated circuit chip radiation sensor package using an encapsulant with the radiation sensor on the active surface sensing through the exposed inactive surface of the IC, according to this invention
- FIGS. 1A and 1B are side elevational views showing a compliant mold insert used instead of the sacrificial layer in FIG. 1 ;
- FIG. 2 is a view similar to FIG. 1 but with the radiation sensor on the active surface sensing through the exposed cap;
- FIG. 3 is a view similar to FIG. 2 but using a half-etched paddle in the lead frame;
- FIG. 3A is a top plan view of FIG. 3 showing the suspension of the half-etched paddle
- FIG. 4 is a view similar to FIG. 2 but with the active surface connected by vias and solder bumps to the leads of the lead frame;
- FIG. 5 is a schematic side sectional diagram of an improved integrated circuit chip radiation sensor package unencapsulated and with the active surface connected through vias to solder bumps;
- FIG. 6 is a view similar to FIG. 5 with the active surface connected directly to the solder bumps and illustrating mounting on a circuit board with an aperture or window proximate the cap and radiation sensor;
- FIG. 7 is a view similar to FIG. 2 with a hole in the encapsulant above the cap;
- FIG. 8 is a schematic block diagram of a pre-molded package according to this invention.
- FIG. 9 is a block diagram of a method of making a radiation sensor device in a package according to this invention.
- Radiation sensor 14 may be an infrared sensor formed by micromachining on the surface of integrated circuit chip 12 .
- This technique is well known as taught in the article “A batch-fabricated silicon thermopile infrared detector” by G. R. Lahiji, K. D. Wise, IEEE Trans' on Electron Devices, 1982 which is incorporated herein in its entirety by this reference.
- Cap 16 is attached to integrated circuit chip 12 using an adhesive such as Ferro 11-036 available from Ferro Corporation, Cleveland, Ohio, USA taught in U.S. Pat. No. 6,893,574 which is incorporated herein in its entirety by this reference.
- Cap 16 protects radiation sensor 14 from handling and environmental damage.
- Radiation sensor 14 is on the active surface 20 of integrated circuit chip 12 .
- Wires 22 and 24 interconnect the active surface 20 of integrated circuit chip 12 to leads 26 and 28 of lead frame 30 .
- the entire assembly of lead frame 30 , cap 16 , and integrated circuit chip 12 with radiation sensor 14 is encapsulated in an encapsulant 32 which may be plastic, epoxy, or some other material, for example, Sumitomo G700 available from Sumitomo Bakelite Co. Ltd, Japan.
- the inactive surface 34 of integrated circuit chip 12 is exposed at boundary 36 of the encapsulant 32 .
- Assuming radiation sensor is an infrared sensor chip 12 may be formed to have at least a portion 38 of it transparent to the infrared radiation. This can be done by making that a portion of the integrated circuit chip material out of silicon or by making the whole substrate of the integrated circuit chip from silicon which is transparent to infrared radiation. If other types of radiation are used, for example, visible radiation, the transparent medium would not be silicon, e.g. a glass or silicon dioxide material.
- a sacrificial layer 42 deposited on the inactive surface 34 of integrated circuit chip 12 before the encapsulation.
- This can be a water soluble material such as Concoat CM553 available from Concoat Ltd, Surrey, England which can be washed away taking with it the mold bleed 40 and leaving the exposed inactive surface 34 clear.
- a further method of overcoming these problems is to use a mold with a ‘soft’ surface in contact with the cap. This would deform slightly over the cap, preventing mechanical contact damage and any resin flash. This alternative is shown in FIG.
- FIG. 1A where conventional mold cavity 100 , having upper and lower mold cavities 102 , 104 , FIG. 1A , is modified to accept a compliant insert 106 , e.g., a rubber coated insert made by ASM International NV, Bilthoven, Netherlands, which would be replaced after a certain number of cycles.
- a compliant insert 106 e.g., a rubber coated insert made by ASM International NV, Bilthoven, Netherlands, which would be replaced after a certain number of cycles.
- the purpose of this insert is to ensure a compression seal between the insert 106 and surface of the cap 16 h , sufficient to prevent the ingress of molding material that would affect the transmission of IR radiation through the cap.
- the insert may be replaced after a certain number of cycles.
- insert 106 may be replaced with a peripheral insert 106 a , FIG. 1B , with a void 108 .
- FIG. 1B In operation, referring again to FIG.
- infrared radiation 44 passes through the transparent portion 38 of integrated circuit chip 12 to strike the infrared sensor 14 .
- Infrared radiation coming from the other direction, that is, attempting to reach infrared sensor 14 through cap 16 would be prevented by the encapsulant 32 .
- radiation sensor device 10 a places a face 46 of cap 16 a at the boundary 36 a of encapsulant 32 a .
- Cap 16 a then includes a transparent portion 38 a which, for example, in one embodiment would be transparent to infrared radiation 44 a .
- the radiation 44 a would then pass through transparent portion 38 a and vacuum 18 a to the radiation sensor 14 a at the active surface 20 a of integrated circuit chip 12 a .
- the inactive surface 34 a of integrated circuit chip 12 a is here shown on paddle 48 which forms a part of lead frame 30 a , along with leads 26 a and 28 a.
- exposed or full paddle 48 may be replaced by hidden or half etched paddle 48 b which is suspended on spring like support elements 50 , 52 , 54 , and 56 , FIG. 3A , from the corners of lead frame 30 b to provide a biasing force that keeps the face 46 b of cap 16 b against the boundary 36 b of the encapsulant and mold during the encapsulation procedure.
- wire leads 22 , 24 , 22 a , 24 a , 22 b , 24 b , of FIGS. 1 , 2 , and 3 respectively, are replaced by vias 22 c , and 24 c and flip chip solder bumps 22 cc and 24 cc which interconnect the active surface 20 c to leads 26 c and 28 c of lead frame 30 c .
- radiation 44 c which may be infrared radiation penetrates a transparent portion 38 c of cap 16 c whose surface 46 c is revealed at boundary 36 c of encapsulant 32 c . It then passes through the volume 18 c , which contains a vacuum, to reach radiation sensor 14 c.
- the radiation sensor device 10 d employs integrated circuit chip 12 d which carries radiation sensor 14 d which is protected by cap 16 d attached to integrated circuit chip 12 d and covering radiation sensor 14 d to form volume 18 d which contains a vacuum. There is no encapsulant included in this embodiment. Electrical connection is made through vias 22 d , 24 d and flip chip solder bumps 22 dd and 24 dd from the active surface 20 d of integrated circuit chip 12 d .
- radiation 44 d may enter through transparent portion 38 d of cap 16 d then pass through volume or vacuum 18 d to radiation sensor 14 d .
- radiation 44 dd may pass through transparent portion 38 dd of integrated circuit chip 12 d . If required, radiation may be prevented from passing through some or all of the surfaces of 12 d by means of a coating.
- integrated circuit chip 12 e in sensor device 10 e , FIG. 6 , can be flipped so that active surface 20 e is on the bottom and connects directly to solder balls or bumps 22 e , 24 e . In that case radiation 44 e can pass through transparent portion 38 e at surface 46 e of cap 16 e then through volume 18 e to radiation sensor 14 e and/or may penetrate from the inactive surface as through transparent portion 38 ee of integrated circuit chip 12 e as does radiation 44 ee.
- device 10 f may include an opening 60 in encapsulant 32 f above cap 16 f so that radiation 44 f can pass through to transparent portion 38 f , then through volume 18 f to radiation sensor 14 f .
- Opening 60 could be filled with a material 62 which is transparent to radiation 44 f .
- a material 62 which is transparent to radiation 44 f .
- opening 60 could be left empty or filled with an infrared transparent material 62 such as silicon.
- integrated circuit chip 12 g and cap 16 g may be mounted in a conventional pre-molded package 66 including base 30 g with leads 26 g and 28 g and paddle 48 g and wall or walls 68 .
- An encapsulant 32 g may then be added up to but typically no farther than the face 46 g so that the boundary 36 g of the encapsulant 32 g is coincident with face 46 g or below it.
- the encapsulant may be filled to the top as shown as 32 gg but leaving a hole 62 g which may be open or filled with a transparent medium.
- a lid 70 may also be employed with a transparent portion 72 . It would be attached at 74 to wall or walls 68 using an adhesive such as Ablestik 84-3J available from Ablestik Inc, Collinso Dominguez, Calif., USA.
- the method of making a radiation sensor device includes attaching a cap to the integrated circuit chip at the radiation sensor 80 , FIG. 9 .
- a vacuum may be formed under the cap at the radiation sensor 82 .
- a sacrificial layer such as Concoat CM553 may be applied to the cap or the integrated circuit chip at the transparent portion 84 .
- the encapsulant is applied 86 and any sacrificial layer is removed 88 .
- a further variation on this is the use of a mould with a compliant surface. The leadframe and die are located in the mould such that the surface of the cap to be exposed is pressed against the compliant surface. This prevents mould flash from reaching the exposed cap surface.
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Abstract
Description
Claims (28)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
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US11/436,245 US7897920B2 (en) | 2005-09-21 | 2006-05-18 | Radiation sensor device and method |
CNA200680034968XA CN101268345A (en) | 2005-09-21 | 2006-09-20 | Radiation sensor device and method |
EP10075357.3A EP2256471B1 (en) | 2005-09-21 | 2006-09-20 | Radiation sensor device and method |
PCT/US2006/036666 WO2007038144A2 (en) | 2005-09-21 | 2006-09-20 | Radiation sensor device and method |
JP2008532352A JP2009509170A (en) | 2005-09-21 | 2006-09-20 | Radiation sensor device and manufacturing method thereof |
CN201611239967.0A CN106644096B (en) | 2005-09-21 | 2006-09-20 | Radiation sensor device and method |
EP06803925A EP1926979A4 (en) | 2005-09-21 | 2006-09-20 | RADIATION SENSOR DEVICE AND METHOD |
US12/315,541 US8476591B2 (en) | 2005-09-21 | 2008-12-04 | Radiation sensor device and method |
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US71912705P | 2005-09-21 | 2005-09-21 | |
US11/436,245 US7897920B2 (en) | 2005-09-21 | 2006-05-18 | Radiation sensor device and method |
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US12/315,541 Continuation-In-Part US8476591B2 (en) | 2005-09-21 | 2008-12-04 | Radiation sensor device and method |
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US20070063145A1 US20070063145A1 (en) | 2007-03-22 |
US7897920B2 true US7897920B2 (en) | 2011-03-01 |
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US11/436,245 Active 2026-11-17 US7897920B2 (en) | 2005-09-21 | 2006-05-18 | Radiation sensor device and method |
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EP (2) | EP2256471B1 (en) |
JP (1) | JP2009509170A (en) |
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WO (1) | WO2007038144A2 (en) |
Cited By (2)
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US20120007202A1 (en) * | 2009-03-12 | 2012-01-12 | Osram Opto Semiconductors Gmbh | Radiation-Receiving Semiconductor Component and Optoelectronic Device |
US20220024243A1 (en) * | 2018-11-26 | 2022-01-27 | Korea Minting, Security Printing & Id Card Operating Corp. | Plastic product containing luminescent material and method for determining authenticity of same |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8476591B2 (en) | 2005-09-21 | 2013-07-02 | Analog Devices, Inc. | Radiation sensor device and method |
US7880244B2 (en) * | 2008-04-15 | 2011-02-01 | Analog Devices, Inc. | Wafer level CSP sensor |
DE102009001969A1 (en) * | 2009-03-30 | 2010-10-07 | Robert Bosch Gmbh | sensor module |
JP5564681B2 (en) * | 2009-09-09 | 2014-07-30 | 旭化成エレクトロニクス株式会社 | Infrared sensor |
JP5662225B2 (en) * | 2011-03-31 | 2015-01-28 | 旭化成エレクトロニクス株式会社 | Infrared sensor |
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Also Published As
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EP2256471A3 (en) | 2011-06-01 |
JP2009509170A (en) | 2009-03-05 |
US20070063145A1 (en) | 2007-03-22 |
WO2007038144A2 (en) | 2007-04-05 |
CN106644096A (en) | 2017-05-10 |
EP2256471A2 (en) | 2010-12-01 |
CN106644096B (en) | 2019-11-15 |
CN101268345A (en) | 2008-09-17 |
WO2007038144A3 (en) | 2007-07-26 |
EP1926979A2 (en) | 2008-06-04 |
EP2256471B1 (en) | 2016-07-13 |
EP1926979A4 (en) | 2009-10-28 |
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