TW202111786A - Substrate processing method and substrate processing apparatus - Google Patents

Abstract

A substrate processing method according to the present disclosure comprises a preparation step, an embedding step, a surface seed layer removal step, a resin material removal step and a plating step. In the preparation step, a substrate is prepared, said substrate being provided with a recess in the surface, while being provided with a seed layer on the surface and on the inner surface of the recess. In the embedding step, the recess is filled with a resin material. In the surface seed layer removal step, the seed layer formed on the surface of the substrate is removed, while protecting the seed layer formed on the inner surface of the recess by means of the resin material. In the resin material removal step, the resin material filled in the recess is removed after the surface seed layer removal step. In the plating step, the recess is filled with a plating film by forming the plating film in the recess by an electroless plating method after the resin material removal step.

Description

Substrate processing method and substrate processing device

This disclosure relates to a substrate processing method and a substrate processing apparatus.

In the past, in the semiconductor manufacturing process, a plating process was used as a method of embedding a metal such as copper in recesses like trenches and through holes.

In the plating process, before the entire recess is buried in the plating film, the opening of the recess is closed by the plating film, which may cause defects such as voids or seams to be formed in the recess. In order to suppress such defects, it is proposed to add to the plating solution an inhibitor that suppresses the precipitation rate of the metal on the upper portion of the recess or an accelerator that promotes the precipitation rate of the metal on the bottom of the recess. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] JP 2003-328180 A

[The problem to be solved by the invention]

The present disclosure provides a technique for embedding metal in recesses without generating defects such as voids or seams. [Means to solve the problem]

The substrate processing method involved in one aspect of the present disclosure includes a preparation process, an embedding process, a surface seed layer removal process, a resin material removal process, and a plating process. The preparation process prepares a substrate in which recesses are formed on the surface, and a seed layer is formed on the surface and the inner surface of the recesses. The embedding process is to embed the resin material in the recess. The surface seed layer removal process is to protect the seed layer formed on the inner surface of the recess with a resin material, and remove the seed layer formed on the surface of the substrate. The resin material removal process is after the surface seed layer removal process, the resin material buried in the recess is removed. The plating process is after the resin material removal process, a plating film by electroless plating is formed in the recessed portion, and the recessed portion is buried with the plating film. [Effects of Invention]

According to the present disclosure, it is possible to embed metal in the recess without generating defects such as voids or joints.

Hereinafter, the type (hereinafter, referred to as "implementation type") for implementing the substrate processing method and substrate processing apparatus according to the present disclosure will be described in detail with reference to the drawings. In addition, the embodiment is not limited to the substrate processing method and substrate processing apparatus according to the present disclosure. Furthermore, the various implementation types can be appropriately combined within the scope of no contradiction in the processing content. In addition, in the following embodiments, the same symbols are assigned to the same parts, and repeated descriptions are omitted.

In addition, in the drawings referred to below, in order to facilitate the understanding of the description, the X-axis, Y-axis and Z-axis directions that are orthogonal to each other are specified, which means that the positive direction of the Z-axis is set to the right-angled coordinates of the vertical upward direction. The situation of the system. In addition, the direction of rotation with the vertical axis as the center of rotation may be referred to as the θ direction.

＜Constitution of substrate processing equipment＞ FIG. 1 is a diagram showing the structure of a substrate processing apparatus according to an embodiment. As shown in FIG. 1, the substrate processing apparatus 1 includes a carry-in and carry-out station 2 and a processing station 3. The loading/unloading station 2 and the processing station 3 are installed adjacent to each other.

The carry-in and carry-out station 2 includes a carrier mounting table 11 and a transport unit 12. The carrier mounting table 11 is placed in a horizontal state and accommodates a plurality of substrates. In this embodiment, it is a plurality of carriers C of a semiconductor wafer (hereinafter referred to as a substrate W).

A plurality of loading ports are arranged side by side on the carrier mounting table 11 so as to be adjacent to the conveying part 12, and one carrier C is placed on each of the plurality of loading ports.

The conveying unit 12 is provided adjacent to the carrier mounting table 11, and includes a substrate conveying device 13 and a receiving unit 14 inside. The substrate transport device 13 includes a wafer holding mechanism that holds the substrate W. Furthermore, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and rotate around the vertical axis, and transfer the substrate W between the carrier C and the receiving unit 14 using a wafer holding mechanism.

The processing station 3 is provided adjacent to the conveying unit 12. The processing station 3 includes a conveying unit 15, a plurality of pre-processing units 4, and a plurality of plating processing units 5. The plural pre-processing sections 4 and the plating processing sections 5 are arranged on both sides of the conveying section 15 in a row. For example, the plural pre-processing sections 4 are provided on the positive side of the Y axis of the conveying section 15, and the plural plating processing sections 5 are provided on the negative side of the Y axis of the conveying section 15. The structure of the pre-processing part 4 and the plating process part 5 is mentioned later.

The conveying unit 15 includes a board conveying device 17 inside. The substrate transport device 17 includes a wafer holding mechanism that holds the substrate W. Furthermore, the substrate conveying device 17 can move in the horizontal and vertical directions and rotate around the vertical axis, and use a wafer holding mechanism to perform the transfer between the receiving section 14, the pre-processing section 4, and the plating processing section 5. Transport of substrate W.

Furthermore, the substrate processing apparatus 1 includes a control device 9. The control device 9 is, for example, a computer, and includes a control unit 91 and a storage unit 92. The memory 92 stores programs for controlling various processes executed in the substrate processing apparatus 1. The control unit 91 controls the operation of the substrate processing apparatus 1 by reading and executing the program stored in the memory unit 92.

In addition, such a program is recorded in a storage medium readable by a computer, even if it is installed in the storage unit 92 of the control device 9 from the storage medium. As a storage medium that can be read by a computer, there are, for example, hard disk (HD), floppy disk (FD), compact disk (CD), magneto-optical disk (MO), memory card, etc.

In the substrate processing apparatus 1 configured as described above, first, the substrate conveying device 13 carried in the unloading station 2 takes out the substrate W from the carrier C placed on the carrier mounting table 11, and places the taken-out substrate W on the receiving section 14. The substrate W placed on the receiving section 14 is taken out from the receiving section 14 by the substrate conveying device 17 of the processing station 3 and carried into the pre-processing section 4.

The substrate W carried in the pre-processing section 4 is processed by the pre-processing section 4. Although the details will be described later, in the pretreatment section 4, the substrate W is subjected to a specific liquid treatment before the treatment by the plating treatment section 5.

The substrate W processed by the preprocessing unit 4 is conveyed from the preprocessing unit 4 to the plating processing unit 5 by the substrate conveying device 17, and is processed by the plating processing unit 5. Specifically, on the surface of the substrate W, recesses such as trenches or through holes are formed, and the plating treatment section 5 embeds such recesses with metal by electroless plating.

The substrate W processed by the plating processing section 5 is carried out from the plating processing section 5 by the substrate conveying device 17 and placed on the receiving section 14. Then, the processed substrate W placed on the receiving section 14 is returned to the carrier C of the carrier placing table 11 by the substrate conveying device 13.

＜The composition of the pre-processing department＞ Next, the pre-processing unit 4 will be described with reference to FIG. 2. FIG. 2 is a diagram showing the structure of the previous processing unit 4 according to the embodiment.

As shown in FIG. 2, the pre-processing unit 4 includes a chamber 110, a substrate holding mechanism 120, a liquid supply unit 130, a heating unit 140, and a cup 150.

The chamber 110 accommodates the substrate holding mechanism 120, the liquid supply unit 130, the heating unit 140, and the cup 150. An FFU (Fan Filter Unit) 111 is provided on the ceiling of the cavity 110. The FFU111 forms a downward flow in the chamber 110.

The substrate holding mechanism 120 includes a holding part 121, a support part 122 and a driving part 123. The holding portion 121 holds the substrate W horizontally. Specifically, the holding portion 121 includes a plurality of grasping portions 121a, and the peripheral portion of the substrate W is grasped using the plurality of grasping portions 121a. The pillar portion 122 extends in the vertical direction, the base end portion is rotatably supported by the driving portion 123, and the front end portion supports the holding portion 121 horizontally. The driving part 123 rotates the pillar part 122 about a vertical axis. In such a substrate holding mechanism 120, the support portion 121 supported by the support portion 122 is rotated by using the driving portion 123 to rotate the support portion 122, and accordingly, the substrate W held by the support portion 121 is rotated.

In addition, even if the holding part 121 is a holding part of a type that sucks and holds the substrate W, such as a vacuum clamp or an electrostatic clamp.

The liquid supply unit 130 supplies various processing liquids to the substrate W held by the substrate holding mechanism 120. The liquid supply unit 130 includes a first nozzle 131, a second nozzle 132, a third nozzle 133, and a fourth nozzle 134. Furthermore, the liquid supply unit 130 includes an arm 135 that supports the first to fourth nozzles 131 to 134, and a moving mechanism 136 that moves the arm 135.

The first nozzle 131 is connected to the resin material supply source 138a via the first valve body 137a, and discharges the resin material supplied from the resin material supply source 138a. As the resin material, for example, an overcoat liquid for forming an overcoat film, a polyimide liquid for forming a polyimide film, a photoresist liquid for forming a photoresist film, and the like are used.

The second nozzle 132 is connected to the first removal liquid supply source 138b via the second valve body 137b, and discharges the first removal liquid supplied from the first removal liquid supply source 138b. The first removal liquid is an organic solvent such as PGMEA (propylene glycol monomethyl ether acetate), NMP (N-methylpyrrolidone), and the like, and is used for removing the protective film formed on the substrate W.

The third nozzle 133 is connected to the second removal liquid supply source 138c via the third valve body 137c, and discharges the second removal liquid supplied from the second removal liquid supply source 138c. The second removal liquid is, for example, SPM (sulfuric acid hydrogen peroxide aqueous solution) or FPM (fluoric acid hydrogen peroxide aqueous solution), and is used for removing the seed layer formed on the substrate W. In addition, even if SPM or FPM is diluted.

The fourth nozzle 134 is connected to the rinsing liquid supply source 138d via the fourth valve body 137d, and discharges the rinsing liquid supplied from the rinsing liquid supply source 138d. The rinsing fluid is, for example, DIW (deionized water).

The heating part 140 is built in, for example, the holding part 121 and heats the substrate W held by the holding part 121. The heating part 140 is used for the baking process of the resin material supplied on the substrate W.

In addition, the heating part 140 does not necessarily need to be provided in the holding part 121. For example, even if the heating part 140 is provided on the top plate, the top plate is arranged above the substrate W held by the holding part 121. In addition, the heating part 140 does not necessarily need to be provided inside the pre-processing part 4. That is, even if the heating part 140 and the pre-processing part 4 are provided separately.

The cup 150 is arranged to surround the holding portion 121, and the processing liquid scattered from the substrate W is supplemented by the rotation of the holding portion 121. A liquid discharge port 151 is formed at the bottom of the cup 150, and the treatment liquid trapped by the cup 150 is discharged from the liquid discharge port 151 to the outside of the pretreatment part 4. Furthermore, an exhaust port 152 for exhausting the gas supplied from the FFU 111 to the outside of the pre-processing unit 4 is formed at the bottom of the cup 150.

＜Constitution of Plating Treatment Department＞ Next, with reference to FIG. 3, the structure of the plating process part 5 is demonstrated. FIG. 3 is a diagram showing the structure of the plating treatment section 5 according to the embodiment.

The plating processing section 5 is configured to perform liquid processing including electroless plating processing. The plating processing section 5 includes a chamber 51, a substrate holding section 52 arranged in the chamber 51 to hold the substrate W horizontal, and a plating solution is supplied to the surface (upper surface) of the substrate W held by the substrate holding section 52 The plating liquid supply part 53 (processing liquid supply part) of L1 (processing liquid).

In this embodiment, the substrate holding portion 52 has a jig member 521 that vacuum-adsorbs the lower surface (rear surface) of the substrate W. This clamp member 521 becomes a so-called vacuum clamp type.

The substrate holding portion 52 is connected to a rotation motor 523 (rotation driving portion) via a rotation shaft 522. When the rotation motor 523 is driven, the substrate holding portion 52 rotates with the substrate W at the same time. The rotating motor 523 is supported by a base 524 fixed to the chamber 51. In addition, no heating source such as a heater is provided inside the substrate holding portion 52.

The plating solution supply unit 53 has a plating solution nozzle 531 (processing solution nozzle) that discharges (supplies) the plating solution L1 to the substrate W held by the substrate holding portion 52, and supplies the plating solution L1 to the plating solution nozzle 531. The plating solution supply source 532. Among them, the plating solution supply source 532 is configured to supply the plating solution L1 heated or adjusted to a specific temperature to the plating solution nozzle 531 via the plating solution pipe 533. The temperature when the plating solution L1 is discharged from the plating solution nozzle 531 is, for example, 55° C. or higher and 75° C. or lower, and more preferably 60° C. or higher and 70° C. or lower. The plating liquid nozzle 531 is held by the nozzle arm 56, and is configured to be movable.

The plating solution L1 is a plating solution for self-catalyst type (reduction type) electroless plating. The plating solution L1 contains, for example, metal ions and a reducing agent. The metal ions contained in the plating solution L1 include cobalt (Co) ions, nickel (Ni) ions, tungsten (W) ions, copper (Cu) ions, palladium (Pd) ions, gold (Au) ions, ruthenium (Ru) ) Ions and so on. In addition, the reducing agent contained in the plating solution L1 is hypophosphorous acid, dimethylamine borane, glyoxylic acid, and the like. As a plating film formed by the plating process using the plating liquid L1, CoWB, CoB, CoWP, CoWBP, NiWB, NiB, NiWP, NiWBP, Cu, Pd, Ru, etc. are mentioned, for example. In addition, even if the plating film is formed from a single layer, it may be formed to cover two or more layers. In the case of a two-layer structure, the plating film has a layer structure such as CoWB/CoB, Pd/CoB, etc., in order from the base metal layer (seed layer) side.

The plating processing section 5 further includes a washing liquid supplying section 54 for supplying a washing liquid L2 to the surface of the substrate W held by the substrate holding section 52, and a washing liquid supplying section 55 for supplying the washing liquid L3 to the surface of the substrate W .

The cleaning liquid supply unit 54 supplies the cleaning liquid L2 to the rotating substrate W held by the substrate holding unit 52 and performs pre-cleaning treatment on the seed layer formed on the substrate W. The cleaning solution supply unit 54 has a cleaning solution nozzle 541 that discharges the cleaning solution L2 to the substrate W held by the substrate holding portion 52, and a cleaning solution supply source 542 that supplies the cleaning solution L2 to the cleaning solution nozzle 541. . Among them, the washing liquid supply source 542 is configured to supply the washing liquid L2 heated or adjusted to a specific temperature to the washing liquid nozzle 541 via the washing liquid pipe 543 as described later. The washing liquid nozzle 541 is held by the nozzle arm 56 and can move together with the plating liquid nozzle 531.

As the cleaning liquid L2, dicarboxylic acid or tricarboxylic acid is used. Among them, as the dicarboxylic acid, organic acids such as malic acid, succinic acid, malonic acid, oxalic acid, glutaric acid, adipic acid, and tartaric acid can be used. Furthermore, as the tricarboxylic acid, organic acids such as citric acid can be used.

The rinse liquid supply unit 55 has a rinse liquid nozzle 551 that discharges the rinse liquid L3 to the substrate W held in the substrate holding section 52, and a rinse liquid supply source 552 that supplies the rinse liquid L3 to the rinse liquid nozzle 551. Among them, the rinse liquid nozzle 551 is held by the nozzle arm 56 so as to be able to move together with the plating liquid nozzle 531 and the washing liquid nozzle 541. Furthermore, the rinse liquid supply source 552 is configured to supply the rinse liquid L3 to the rinse liquid nozzle 551 via the rinse liquid pipe 553. As the rinse liquid L3, DIW etc. can be used, for example.

The nozzle arm 56 holding the plating liquid nozzle 531, the washing liquid nozzle 541, and the washing liquid nozzle 551 is connected to a nozzle moving mechanism (not shown). This nozzle moving mechanism moves the nozzle arm 56 in the horizontal direction and the vertical direction. More specifically, by the nozzle moving mechanism, the nozzle arm 56 becomes a discharge position where the treatment liquid (plating liquid L1, cleaning liquid L2, or rinse liquid L3) can be discharged to the substrate W, and an evacuation position that can be retracted from the discharge position. Move between. However, the discharge position is not particularly limited as long as the processing liquid can be supplied to any position on the surface of the substrate W. For example, it is preferable to set the position where the processing liquid can be supplied to the center of the substrate W. In the case of supplying the plating solution L1 to the substrate W, the case of supplying the cleaning solution L2, and the case of supplying the flushing solution L3, even if the discharge position of the nozzle arm 56 is different. The retreat position is a position in the chamber 51 that does not overlap the substrate W when viewed from above, and is a position separated from the ejection position. When the nozzle arm 56 is positioned at the retracted position, the situation where the moving cover 6 interferes with the nozzle arm 56 is avoided.

A cup 571 is provided around the substrate holding portion 52. The cup 571 is formed in a ring shape when viewed from above, and when the substrate W is rotated, the processing liquid scattered from the substrate W is received and guided to the drain pipe 581. On the outer peripheral side of the cup 571, an environmental shielding cover 572 is provided to prevent the environment around the substrate W from spreading into the chamber 51. The environmental shielding cover 572 is formed into a cylindrical shape so as to extend in the vertical direction, and the upper end is open. The cover body 6 described later can be inserted into the environmental shielding cover 572 from above.

In this embodiment, the substrate W held by the substrate holding portion 52 is covered by the cover 6. The cover 6 has a ceiling portion 61 and a side wall portion 62 extending downward from the ceiling portion 61.

The ceiling portion 61 includes a first top plate 611 and a second top plate 612 provided on the first top plate 611. A heater 63 (heating part) is interposed between the first top plate 611 and the second top plate 612. The first top plate 611 and the second top plate 612 constitute a sealed heater 63, and the heater 63 is not in contact with the treatment liquid such as the plating liquid L1. More specifically, a sealing ring 613 is provided on the outer peripheral side of the heater 63, and the heater 63 is sealed by the sealing ring 613. The first top plate 611 and the second top plate 612 preferably have corrosion resistance with respect to treatment liquids such as the plating liquid L1, and may be formed of aluminum alloy, for example. Furthermore, in order to improve the corrosion resistance, the first top plate 611, the second top plate 612, and the side wall portion 62 may be coated with Teflon (registered trademark).

The lid body 6 is connected to the lid body moving mechanism 7 via a lid body arm 71. The cover moving mechanism 7 moves the cover 6 in the horizontal direction and the vertical direction. More specifically, the cover moving mechanism 7 has a rotation motor 72 that moves the cover 6 in the horizontal direction, and a cylinder 73 (interval adjustment unit) that moves the cover 6 in the vertical direction. Among them, the rotation motor 72 is mounted on a support plate 74 that is provided to be movable in the vertical direction with respect to the cylinder 73. As a substitute for the cylinder 73, an actuator (not shown) including a motor and a ball screw may be used.

The rotation motor 72 of the cover moving mechanism 7 moves the cover 6 between an upper position arranged above the substrate W held by the substrate holding portion 52 and a retracted position retracted from the upper position. Here, the upper position is a position opposed to the substrate W held by the substrate holding portion 52 at a relatively large interval, and does not overlap with the substrate W when viewed from above. The retreat position is a position in the chamber 51 that does not overlap the substrate W when viewed from above. When the cover 6 is positioned at the retracted position, the situation where the moving nozzle arm 56 interferes with the cover 6 is avoided. The rotation axis of the rotation motor 72 extends in the vertical direction, and the cover 6 is positioned between the upper position and the retracted position, and is capable of rotating and moving in the horizontal direction.

The cylinder 73 of the lid moving mechanism 7 moves the lid 6 in the vertical direction to adjust the distance between the substrate W supplied with the plating liquid L1 and the first top plate 611 of the ceiling portion 61. More specifically, the cylinder 73 positions the cover 6 in a lower position (a position indicated by a solid line in FIG. 2) and an upper position (a position indicated by a two-dot chain line in FIG. 2).

In this embodiment, the constituent heater 63 is driven, and when the lid 6 is positioned at the above-mentioned lower position, the substrate holding portion 52 or the plating solution L1 on the substrate W is heated.

Inside the cover 6, an inert gas (for example, nitrogen (N2) gas) is supplied by the inert gas supply part 66. The inert gas supply unit 66 has a gas nozzle 661 that discharges an inert gas to the inside of the cover 6 and an inert gas supply source 662 that supplies an inert gas to the gas nozzle 661. Among them, the gas nozzle 661 is provided on the ceiling portion 61 of the lid 6 and discharges the inert gas toward the substrate W in the state where the lid 6 covers the substrate W.

The ceiling portion 61 and the side wall portion 62 of the lid body 6 are covered by the lid body cover 64. The lid cover 64 is placed on the second top plate 612 of the lid 6 via the supporting portion 65. That is, the second top plate 612 is provided with a plurality of support parts 65 protruding upward from the upper surface of the second top plate 612, and the lid cover 64 is placed on the support part 65. The lid cover 64 can be moved in the horizontal direction and the vertical direction together with the lid 6. Furthermore, in order to prevent the heat in the cover 6 from being radiated to the surroundings, the cover cover 64 preferably has higher heat insulation properties than the ceiling part 61 and the side wall part 62. For example, it is preferable that the lid cover 64 is formed of a resin material, and it is more preferable that the resin material has heat resistance.

In this way, in the present embodiment, the lid body 6 with the heater 63 and the lid body cover 64 are provided integrally, and when they are arranged at the lower position, the lid unit covering the substrate holding portion 52 or the substrate W 10 is constituted by the cover body 6 and the cover body cover 64.

On the upper part of the chamber 51, a fan filter unit 59 (gas supply part) for supplying clean air (gas) to the periphery of the cover 6 is provided. The fan filter unit 59 supplies air into the chamber 51 (especially, the environment blocking cover 572), and the supplied space flows toward the exhaust pipe 81. Around the lid body 6, a downward flow in which the air flows downward is formed, and the gas vaporized from the treatment liquid such as the plating liquid L1 flows toward the exhaust pipe 81 by the downward flow. In this way, it is prevented that the gas vaporized from the processing liquid rises and diffuses into the chamber 51.

The air supplied from the fan filter unit 59 is exhausted by the exhaust mechanism 8.

＜Specific actions of substrate processing equipment＞ Next, specific operations of the substrate processing apparatus 1 described above will be described with reference to FIGS. 4 to 11. 4 is a flowchart showing the procedure of the processing performed by the substrate processing apparatus 1 according to the embodiment, and FIG. 5 is a flowchart showing the procedure of the electroless plating treatment according to the embodiment. 6 is a diagram showing an example of the substrate W before processing by the substrate processing apparatus 1, FIG. 7 is a diagram showing an example of the substrate W after the protective film formation treatment, and FIG. 8 is a diagram showing the surface seed layer exposure treatment The following figure shows an example of the substrate W. 9 is a diagram showing an example of the substrate W after the surface seed layer removal treatment, FIG. 10 is a diagram showing an example of the substrate W after the protective film removal treatment, and FIG. 11 is a diagram showing the substrate W after the electroless plating treatment A diagram of an example of W. In addition, the processing shown in FIGS. 4 and 5 is executed in accordance with the control by the control unit 91.

As shown in FIG. 4, in the substrate processing apparatus 1, first, a protective film formation process is performed (step S101). In the protective film formation process, first, the substrate W is carried in with respect to the pre-processing section 4. The substrate W carried in the pre-processing section 4 is held by the substrate holding mechanism 120 of the pre-processing section 4.

Here, as shown in FIG. 6, recesses 501 such as grooves or through holes are formed on the surface (upper surface) of the substrate W. Furthermore, on the surface of the substrate W and the inner surface of the recess 501, a barrier layer 502 and a seed layer 503 are formed. The barrier layer 502 and the seed layer 503 are laminated with respect to the substrate W in the order of the barrier layer 502 and the seed layer 503. The barrier layer 502 and the seed layer 503 are laminated on the substrate W by, for example, sputtering. The barrier layer 502 is made of, for example, titanium (Ti), titanium nitride (TiN), etc., and the seed layer 503 is made of, for example, a metal such as copper (Cu) or cobalt (Co).

The pre-processing part 4 uses the substrate holding mechanism 120 to hold the substrate W, and then uses the drive part 123 to rotate the holding part 121. According to this, the substrate W rotates together with the holding portion 121. Next, the pre-processing unit 4 moves the arm 135 by using the moving mechanism 136 to position the first nozzle 131 above the center of the substrate W. After that, the pre-processing unit 4 supplies the resin material from the first nozzle 131 to the center portion of the substrate W by opening the first valve body 137a for a certain period of time. The resin material supplied to the center portion of the substrate W spreads over the entire surface of the substrate W by the centrifugal force following the rotation of the substrate W.

Next, the pre-processing part 4 heats the substrate W by using the heating part 140 to heat the resin material coated on the substrate W. The heating temperature by the heating unit 140 is, for example, 90°C or more and 130°C or less. When the resin material is heated, a protective film 504 made of resin is formed on the substrate W (see FIG. 7).

Next, in the pre-processing part 4, the surface seed layer exposure process is performed (step S102). In the surface seed layer exposure treatment, the pre-processing part 4 moves the arm part 135 by using the moving mechanism 136 to position the second nozzle 132 above the center of the substrate W. After that, the pre-processing unit 4 supplies the first removal liquid to the center portion of the substrate W from the second nozzle 132 by opening the second valve body 137b for a certain period of time. As described above, the first removal liquid is an organic solvent such as PEGMEA. The first removal liquid supplied to the center portion of the substrate W is spread over the entire surface of the substrate W by the centrifugal force accompanying the rotation of the substrate W.

In the surface seed layer exposure treatment, the first removing liquid is supplied to the substrate W until the seed layer 503 formed on the surface of the substrate W is exposed from the protective film 504 (see FIG. 8). At this time, in the surface seed layer exposure treatment, the supply time, flow rate, concentration, etc. of the first removal liquid are adjusted so that the protective film 504 buried in the recess 501 is not removed.

In addition, when the thin protective film 504 is formed, the protective film 504 may be recessed above the concave portion 501, and the protective film 504 buried in the concave portion 501 may be excessively removed during the surface seed layer exposure treatment. Therefore, as shown in FIG. 7, the protective film 504 is preferably formed to a certain thickness.

Next, in the pre-processing part 4, the surface seed layer removal process is performed (step S103). In the surface seed layer removal process, the pre-processing part 4 moves the arm part 135 by using the moving mechanism 136 to position the third nozzle 133 above the center of the substrate W. After that, the pre-processing unit 4 supplies the second removal liquid from the third nozzle 133 to the center portion of the substrate W by opening the third valve body 137c for a certain period of time. As described above, the second removal liquid is an etching liquid such as SPM or FPM.

The second removal liquid supplied to the center portion of the substrate W is spread over the entire surface of the substrate W by the centrifugal force accompanying the rotation of the substrate W. In this way, the seed layer 503 formed on the surface of the substrate W is removed by the second removing liquid (see FIG. 9). On the other hand, the seed layer 503 formed on the inner surface of the recessed portion 501 is covered by the protective film 504 and remains on the substrate W because it does not come into contact with the second removing liquid.

Next, in the pre-processing part 4, the protective film removal process is performed (step S104). In the protective film removal process, the pre-processing part 4 moves the arm part 135 using the moving mechanism 136, and positions the second nozzle 132 above the center of the substrate W. After that, the pre-processing unit 4 supplies the first removal liquid to the center portion of the substrate W from the second nozzle 132 by opening the second valve body 137b for a certain period of time. The first removal liquid supplied to the center portion of the substrate W is spread over the entire surface of the substrate W by the centrifugal force accompanying the rotation of the substrate W. According to this, the protective film 504 buried in the recess 501 is removed (refer to FIG. 10).

In the protective film removal process, the supply time, flow rate, concentration, etc. of the first removal liquid are adjusted so that the protective film 504 buried in the recess 501 is removed. In addition, even if the pretreatment part 4 uses a different kind of organic solvent (third removal liquid) from the first removal liquid used in the surface seed layer exposing treatment, the protective film removal treatment may be performed.

Next, in the pre-processing part 4, a rinse process is performed (step S105). In the rinsing process, the pre-processing part 4 moves the arm part 135 by using the moving mechanism 136 to position the fourth nozzle 134 above the center of the substrate W. After that, the pre-processing unit 4 supplies the rinse liquid from the fourth nozzle 134 to the center portion of the substrate W by opening the third valve body 137c for a certain period of time. The rinse liquid supplied to the center of the substrate W spreads over the entire surface of the substrate W by the centrifugal force following the rotation of the substrate W. Accordingly, the first removing liquid or protective film 504 remaining on the substrate W is rinsed from the substrate W by the rinse liquid.

Next, in the pre-processing part 4, a drying process is performed (step S106). In the drying process, the pre-processing unit 4 rotates the substrate W at a high speed by, for example, increasing the number of rotations of the substrate W. Accordingly, the rinse liquid remaining on the substrate W is shaken off, and the substrate W is dried.

When the drying process is completed, the substrate W is taken out from the pre-processing section 4 by the substrate conveying device 17 and carried into the plating processing section 5. Then, in the plating treatment section 5, an electroless plating treatment is performed (step S107). The procedure of the electroless plating process will be described with reference to FIG. 5.

As shown in FIG. 5, first, the substrate W carried in the plating processing section 5 is held by the substrate holding section 52 (step S201). Here, the lower surface of the substrate W is vacuum sucked, and the substrate W is horizontally held by the substrate holding portion 52.

Next, the substrate W held by the substrate holding portion 52 is cleaned (step S202). In this case, first, the rotation motor 523 is driven, and the substrate W is rotated at a specific number of rotations. Next, the nozzle arm 56 positioned at the retracted position (the position indicated by the solid line in FIG. 3) moves to the discharge position above the center of the substrate W. Next, the cleaning liquid L2 is supplied from the cleaning liquid nozzle 541 to the rotating substrate W, and the surface of the substrate W is cleaned. According to this, the attached matter and the like attached to the substrate W are removed from the substrate W. The cleaning liquid L2 supplied to the substrate W is discharged to the drain pipe 581.

Next, the substrate W subjected to the cleaning process is rinsed (step S203). In this case, the rinse liquid L3 is supplied from the rinse liquid nozzle 551 to the rotating substrate W, and the surface of the substrate W is rinsed. Accordingly, the cleaning liquid L2 remaining on the substrate W is rinsed. The rinse liquid L3 supplied to the substrate W is discharged to the drain pipe 581.

Next, the plating solution L1 is supplied to and carried on the rinse-processed substrate W (step S204). In this case, first, the number of rotations of the substrate W is lowered than the number of rotations during the rinse process. For example, even if the number of rotations of the substrate W is 50 to 150 rpm. According to this, the plating film formed on the substrate W can be made uniform. In addition, even if the rotation of the substrate W is stopped.

Next, the plating solution L1 is discharged from the plating solution nozzle 531 to the surface of the substrate W. The discharged plating solution L1 stays on the surface of the substrate W due to surface tension, and the plating solution is carried on the surface of the substrate W to form a layer of the plating solution L1 (so-called holding solution). A part of the plating solution L1 flows out from the surface of the substrate W and is discharged from the drain pipe 581. After the specific amount of plating solution L1 is discharged from the plating solution nozzle 531, the discharge of the plating solution L1 is stopped. After that, the nozzle arm 56 positioned at the discharge position is positioned at the retracted position.

Next, the plating solution L1 carried on the substrate W is heated. First, the substrate W is covered by the cover 6 (step S205). In this case, first, the rotation motor 72 of the cover moving mechanism 7 is driven, and the cover 6 rotates and moves in the horizontal direction, and is positioned at an upper position (a position indicated by a two-dot chain line in FIG. 3).

Next, the cylinder 73 of the cover moving mechanism 7 is driven, and the cover 6 positioned at the upper position descends and is positioned at the first interval position. Accordingly, the interval between the substrate W and the first top plate 611 of the cover 6 becomes the first interval, and the side wall portion 62 of the cover 6 is arranged on the outer peripheral side of the substrate W. In this embodiment, the lower end 621 of the side wall 62 of the cover 6 is positioned at a lower position than the bottom of the substrate W. In this way, the substrate W is covered by the cover 6 and the space around the substrate W is blocked.

After the substrate W is covered by the lid body 6, the gas nozzle 661 provided on the ceiling portion 61 of the lid body 6 discharges an inert gas to the inside of the lid body 6 (step S206). Accordingly, the inside of the cover 6 is replaced with an inert gas, and the surrounding of the substrate W becomes a low-oxygen environment. The inert gas is vented for a specific time, and then the venting of the inert gas is stopped.

Next, the plating solution L1 carried on the substrate W is heated by the heater 63 (step S207). When the temperature of the plating solution L1 rises to a temperature determined by the analysis, the components of the plating solution L1 are deposited on the surface of the seed layer 503 to form a plating film 506 (see FIG. 11).

Next, the cover moving mechanism 7 is driven, and the cover 6 is positioned at the retracted position (step S208). In this case, first, when the cylinder 73 of the cover moving mechanism 7 is driven, the cover 6 is raised and positioned at the upper position. After that, the rotation motor 72 of the cover moving mechanism 7 is driven, and the cover 6 positioned at the upper position rotates and moves in the horizontal direction and is positioned at the retracted position.

Next, the substrate W is rinsed (step S209). In this case, first, the number of rotations of the substrate W is increased more than the number of rotations during the rinse process. For example, the substrate W is rotated at the same number of rotations as the rinse process (step S203) before the plating process. Next, the rinse liquid nozzle 551 positioned at the retracted position is moved to the discharge position. Next, the rinse liquid L3 is supplied from the rinse liquid nozzle 551 to the rotating substrate W, and the surface of the substrate W is cleaned. Accordingly, the plating solution L1 remaining on the substrate W is rinsed.

Next, the substrate W that has been rinsed is dried (step S210). In this case, for example, the number of rotations of the substrate W is increased compared to the number of rotations of the washing process (step S209), and the substrate W is rotated at a high speed. Accordingly, the rinse liquid L3 remaining on the substrate W is shaken off, and the substrate W is dried.

When the drying process is completed, the substrate W is taken out from the plating process section 5 by the substrate transport device 17 and is transported to the receiving section 14. Furthermore, the substrate W conveyed to the receiving section 14 is taken out from the receiving section 14 by the substrate conveying device 13 and stored in the carrier C.

In this way, in the substrate processing apparatus 1 according to the embodiment, after removing the seed layer 503 formed on the surface of the substrate W, it is assumed that the recess 501 caused by the electroless plating method is embedded with metal.

By removing the seed layer 503 formed on the surface of the substrate W, the seed layer 503 formed on the edge of the opening of the recess 501 is also removed. According to this, before the entire recess 501 is buried by the plating film, it is difficult to produce a so-called pinch in which the opening of the recess 501 is closed by the plating film. Therefore, it is possible to suppress the formation of voids or seams in the recess 501. situation.

Furthermore, when removing the seed layer 503 formed on the surface of the substrate W, by protecting the seed layer 503 formed on the inner surface of the recess 501 with a resin material, it can be suppressed until it is formed on the inner surface of the recess 501 The seed layer 503 is removed. In recent years, in order to suppress the occurrence of pinching, it has been studied to make the film thickness of the seed layer 503 thinner. However, as the film thickness of the seed layer 503 becomes thinner, it is difficult to remove only the seed layer 503 formed on the surface of the substrate W while leaving the seed layer 503 formed on the inner surface of the recess 501. In this regard, by protecting the seed layer 503 formed on the inner surface of the recess 501 with a resin material, the seed layer 503 formed on the surface of the substrate W can be appropriately removed.

Furthermore, in the case of the substrate processing apparatus 1 according to the embodiment, the barrier layer 502 formed on the surface of the substrate W is exposed from the seed layer 503 by performing a surface seed layer removal process. When the barrier layer 502 is exposed from the seed layer 503, the barrier layer 502 exposed from the seed layer 503 is oxidized to generate electrons. The generated electrons propagate to the seed layer 503 formed on the inner surface of the recess 501 and concentrate on the lower part of the recess 501.

Accordingly, the growth of the plating film 506 on the bottom surface of the recess 501 is promoted. That is, since the plating film 506 can be moved from bottom to top from the bottom surface of the recess 501, defects such as voids or seams formed in the recess 501 can also be suppressed by this.

<Modifications> In the above-mentioned embodiment, an example of the case where the surface seed layer exposure treatment (step S102 in FIG. 4) and the protective film removal treatment (step S104 in FIG. 4) are performed by the wet treatment using the treatment liquid will be described. It is not limited to this, and the surface seed layer exposure treatment and the protective film removal treatment may be performed by ashing.

An example of a substrate processing apparatus in such a case will be described with reference to FIG. 12. FIG. 12 is a diagram showing the structure of a substrate processing apparatus according to a modification. In addition, FIG. 13 is a diagram showing the configuration of the second preprocessing unit according to the modification.

As shown in FIG. 12, the substrate processing apparatus 1A according to the modification includes a first apparatus 1A1 and a second apparatus 1A2.

The first device 1A1 is configured to include a first pretreatment section 4A1 and the above-mentioned plating treatment section 5. The first pretreatment unit 4A1 has, for example, a configuration in which the second nozzle 132, the second valve body 137b, and the first removal liquid supply source 138b are omitted from the pretreatment unit 4 described above. In the first pre-processing part 4A1, for example, a protective film formation process (step S101 in FIG. 4) and a surface seed layer removal process (step S103 in FIG. 4) are performed.

In addition, the first device 1A1 is configured to include a carrier mounting table, a substrate conveying device, and the like, in addition to the first pre-processing section 4A1 and the plating processing section 5.

The second device 1A2 is configured to include a second pre-processing unit 4A2. The second pre-processing unit 4A2 is a plasma processing device.

As shown in FIG. 13, the second pretreatment unit 4A2 includes a container 401 and an exhaust pipe 402. In the container 401, Ar gas or oxygen (O2) gas is supplied via the supply pipe 403. The gas in the container 401 is exhausted from the exhaust pipe 402. Here, the inside of the container 401 is a normal pressure environment, but the inside of the container 401 may be a vacuum environment.

In the container 401, a lower electrode 404 is provided, and the substrate W is placed on the lower electrode 404. A case 405 is provided at a position facing the surface of the lower electrode 404 on which the substrate W is placed. The upper electrode 406 is arranged in the case 405. A high-frequency power source 407 is connected to the upper electrode 406.

After the substrate W is placed on the lower electrode 404, Ar gas is supplied into the container 401. Furthermore, a high-frequency power of a specific frequency is applied from the high-frequency power supply 407 to the upper electrode 406, thereby exciting the plasma of Ar gas in the container 401. After the plasma of Ar gas is excited, O2 gas is further supplied into the container 401, and the protective film 504 is ashed (under ash) and removed from the substrate W.

In this way, the second pretreatment part 4A2 performs surface seed layer exposure treatment (step S102 in FIG. 4) and protective film removal treatment by ashing treatment.

In the substrate processing apparatus 1A according to the modification example, after the protective film formation process (step S101 in FIG. 4) is performed in the first preprocessing section 4A1 of the first apparatus 1A1, the substrate W after the protective film formation process is turned to the first 2 The second pre-processing unit 4A2 of the device 1A2 is transported. Next, after the surface seed layer exposing treatment is performed in the second pretreatment part 4A2 (step S102 in FIG. 4), the substrate W after the surface seed layer exposing treatment is transported to the first pretreatment part 4A1.

Next, in the first pretreatment part 4A1, the surface seed layer removal treatment (step S103 in FIG. 4), rinse treatment (step S105 in FIG. 4), and drying treatment (step S106 in FIG. 4) are performed, and then the surface seed layer The substrate W after the removal process is transported to the second pre-processing section 4A2. Next, in the second pretreatment section 4A2, after the protective film removal process (step S104 in FIG. 4) is performed, the substrate W after the protective film removal process is transported to the plating process section 5.

Here, although the surface seed layer exposure treatment and the protective film removal treatment are performed by the ashing treatment, even if the substrate processing apparatus 1A performs the surface seed layer exposure treatment by the wet treatment, for example, the protective film removal treatment by the ashing treatment can.

＜Other modifications＞ Even for the surface seed layer removal treatment, it does not have to be performed in the wet treatment. For example, even if the surface seed layer removal treatment is performed by plasma treatment, reverse sputtering treatment, or the like. For example, even if the surface seed layer removal process is performed using the 2nd pre-processing part 4A2.

In the above embodiment, when the protective film formation treatment, the surface seed layer exposure treatment, the surface seed layer removal treatment, and the protective film removal treatment are performed by wet treatment, the single pretreatment section 4 is used to perform these treatments. It is not limited to this, even if the protective film formation process, the surface seed layer exposure process, the surface seed layer removal process, and the protective film removal process may be performed using a plurality of pretreatment parts. For example, even if two different pretreatment devices are used, the protective film formation treatment related to the coating and removal of the resin material, the surface seed layer exposure treatment and the protective film removal treatment, and the surface seed related to the removal of the seed layer 503 are performed Layer removal treatment is also possible.

In addition, when the protective film formation process, the surface seed layer exposure process, the surface seed layer removal process, and the protective film removal process are performed by a wet process, even if these processes are performed in the plating process part 5, it is sufficient. In this case, in addition to the configuration shown in FIG. 3, the plating processing section 5 may further include a liquid supply section 130, a heating section 140, and the like.

As described above, the substrate processing method involved in the implementation mode includes the preparation process, the embedding process (as an example, the protective film formation process), the surface seed layer removal process (as an example, the surface seed layer removal process), and the resin material removal process (As an example, protective film removal treatment), and plating process (as an example, electroless plating treatment). The preparation process prepares a substrate (for example, substrate W) in which recesses (as an example, recesses 501) are formed on the surface, and a seed layer (as an example, seed layer 503) is formed on the surface and the inner surface of the recesses. The embedding process is to embed the resin material in the recess. The surface seed layer removal process is to protect the seed layer formed on the inner surface of the recess with a resin material (for example, the protective film 504), and remove the seed layer formed on the surface of the substrate. The resin material removal process is after the surface seed layer removal process, the resin material buried in the recess is removed. In the plating process, after the resin material removal process, a plating film (plated film 506, for example) by the electroless plating method is formed in the recessed portion, and the recessed portion is buried with the plating film.

By removing the seed layer formed on the surface of the substrate, the seed layer formed on the edge of the opening of the recess is also removed. According to this, before the entire recess is buried by the plating film, it is difficult to produce a so-called pinch in which the opening of the recess is closed by the plating film, so defects such as formation of voids or seams in the recess can be suppressed.

The embedding process is the process of coating resin material on the surface of the substrate. In this case, even if the substrate processing method related to the implementation mode further includes a surface seed layer exposing process (as an example, a surface seed layer exposing process). The surface seed layer exposure process is to remove the resin material coated on the surface of the substrate after the embedding process and before the surface seed layer removal process, so that the seed layer formed on the surface of the substrate is exposed from the resin material. According to this, only the seed layer formed on the surface of the substrate can be exposed.

Even if the embedding process, the surface seed layer exposure process, the surface seed layer removal process, and the resin material removal process are performed by wet treatment using liquid. Accordingly, it becomes easy to realize the substrate processing method related to the implementation type by a single device.

Even if the surface seed layer exposure process and the resin material removal process are performed by ashing treatment. Even through the ashing treatment, the resin material can be removed.

Furthermore, the substrate processing apparatus (as an example, the substrate processing apparatus 1, 1A) according to the embodiment includes an embedded processing section (as an example, the preprocessing section 4, the first preprocessing section 4A1), and a surface seed layer removal section (As an example, the pretreatment section 4, the first pretreatment section 4A1, the second pretreatment section 4A2), the resin material removal section (as an example, the pretreatment section 4, the first pretreatment section 4A1, and the second pretreatment section 4A2) And the plating treatment part (as an example, the plating treatment part 5). The embedding treatment part is to form a recess on the surface (as an example, recess 501), and a seed layer (as an example, the seed layer) is formed on the surface and the inner surface of the recess The recess of the substrate of 503) is embedded with a resin material. The surface seed layer removal part protects the seed layer formed on the inner surface of the recess with a resin material, and removes the seed layer formed on the surface of the substrate. The resin material removal part is used to protect the seed layer formed on the inner surface of the recess. The resin material buried in the recessed portion is removed. The plating treatment part forms a plating film (plated film 506, for example) by electroless plating in the recessed portion, and then burys the recessed portion with the plating film. Metal is embedded in the recess without defects such as voids or joints.

It should be considered that the implementation type disclosed this time is illustrative and not restrictive in any respect. In fact, the above-mentioned implementation types can be presented in various types. Furthermore, the above-mentioned embodiments may be omitted, replaced, and changed in various forms without departing from the scope of the patent application and the spirit thereof.

W: substrate 1: Substrate processing equipment 4: Pre-processing department 5: Plating treatment department 9: Control device 131: Nozzle 1 132: Nozzle 2 133: Nozzle 3 138a: Resin material supply source 138b: The first removal liquid supply source 138c: 2nd removal liquid supply source

[Fig. 1] is a diagram showing the structure of a substrate processing apparatus according to an embodiment. [Fig. 2] is a diagram showing the structure of the previous processing unit involved in the implementation type. [Fig. 3] is a diagram showing the structure of the plating treatment part according to the embodiment. [Fig. 4] is a flowchart showing the procedure of processing performed by the substrate processing apparatus according to the embodiment. [Fig. 5] is a flowchart showing the procedure of the electroless plating process according to the implementation mode. Fig. 6 is a diagram showing an example of a substrate before processing by the substrate processing apparatus. [Fig. 7] A diagram showing an example of the substrate after the protective film formation process. Fig. 8 is a diagram showing an example of the substrate after the surface seed layer exposure treatment. Fig. 9 is a diagram showing an example of the substrate after the surface seed layer removal treatment. Fig. 10 is a diagram showing an example of the substrate after the protective film removal process. Fig. 11 is a diagram showing an example of a substrate after electroless plating treatment. [FIG. 12] A diagram showing the structure of a substrate processing apparatus according to a modification example. [Fig. 13] is a diagram showing the configuration of a second pre-processing unit according to a modified example.

Claims (5)

A substrate processing method, including: A preparation process, which is to prepare a substrate for forming recesses on the surface, and forming a seed layer on the surface and the inner surface of the recesses; The embedding process is to embed the resin material into the above-mentioned recess; The surface seed layer removal process involves protecting the seed layer formed on the inner surface of the recess with the resin material, and removing the seed layer formed on the surface of the substrate; Resin material removal process, which is to remove the resin material buried in the recess after the surface seed layer removal process; and The plating process is a process of forming a plating film by an electroless plating method in the recessed portion after the resin material removal process, and burying the recessed portion with the plating film. Such as the substrate processing method of claim 1, wherein The above-mentioned embedding process is a process of coating the above-mentioned resin material on the above-mentioned surface of the above-mentioned substrate, After the embedding process, and before the surface seed layer removal process, the process further includes a surface seed layer exposing process, which removes the resin material coated on the surface of the substrate so that the The seed layer on the surface is exposed from the resin material. Such as the substrate processing method of claim 2, wherein The embedding process, the surface seed layer exposure process, the surface seed layer removal process, and the resin material removal process are performed by wet treatment using a liquid. Such as the substrate processing method of claim 2, wherein The surface seed layer exposure process and the resin material removal process are performed by ashing treatment. A substrate processing device, including: An embedding treatment part, which forms a recessed part on the surface, and embeds the resin material in the recessed part of the substrate on which the seed layer is formed on the surface and the inner surface of the recessed part; A surface seed layer removal portion, which protects the seed layer formed on the inner surface of the recess with the resin material, and removes the seed layer formed on the surface of the substrate; A resin material removal part, which removes the resin material buried in the recess; and The plating process part forms a plating film by an electroless plating method in the said recessed part, and fills the said recessed part with the said plating film.

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