TW201133152A - Source collector apparatus, lithographic apparatus and device manufacturing method - Google Patents

Abstract

An EUV lithographic apparatus comprises a source collector apparatus in which the extreme ultraviolet radiation is generated by exciting a fuel to provide a plasma emitting the radiation. The source collector apparatus includes a chamber in fluid communication with a guide way external to the chamber. A pump for circulating buffer gas is part of the guide way, and provides a closed loop buffer gas flow. The gas flowing through the guide way traverses a gas decomposer wherein a compound of fuel material and buffer gas material is decomposed, so that decomposed buffer gas material can be fed back into the closed loop flow path.

Description

201133152 VI. Description of the Invention: [Technical Field] The present invention relates to a lithography apparatus and a method for manufacturing an element. [Prior Art] A lithography apparatus is a machine that applies a desired pattern onto a substrate (usually applied to a target portion of the substrate). The lithography apparatus can be used, for example, in the manufacture of an integrated circuit (1C). In this case, a patterned element (which may be referred to as a reticle or a proportional reticle) may be used to create a circuit pattern to be formed on individual layers of the IC. This pattern can be transferred to a substrate (eg, a germanium wafer) The target portion (for example, a portion containing a crystal grain, a crystal grain or a plurality of crystal grains). Transfer of the pattern is typically carried out via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. Typically, t, a single substrate will contain a network of sequentially patterned adjacent target portions. Micro-shadows are widely considered to be one of the key steps in the manufacture of 1 (and other components and/or structures). However, as the dimensions of features produced using lithography become smaller, micro Shadowing is becoming a more decisive factor for enabling the fabrication of small 1C or other components and/or structures. The theoretical estimation of the pattern printing limit can be given by Rayleigh resolution criteria as follows (1) Shown: (1)

CD = k'* 丄NA where λ is the wavelength of the light shot used, and NA is the numerical aperture of the projection used to print the pattern '匕 is the program dependency adjustment factor (also known as Ruili 151181.doc 201133152) Constant), and CD is the feature size (or critical dimension) of the printed features. From Equation (1), the minimum printable size reduction of the feature can be obtained in two ways: by shortening the exposure wave, by increasing the numerical aperture NA, or by lowering the value of k丨. In order to shorten the exposure wavelength and thus reduce the minimum printable size, an extreme ultraviolet (EUV) light source is used. EUV light shots have a range of 10 2 meters (for example, in the range of 13 nm to 14 nm: wavelength of electromagnetic radiation. It has been proposed to use less than 1G nai = at 5 nm to H) EUV radiation in the range of nanometers (such as 67 nm or 68 nm). This radiation is referred to as extreme ultraviolet radiation or a soft read line. The source of the hm source is, for example, a laser source, a discharge source, or a source of synchrotron radiation provided by an electronic storage ring. Electro-convergence can be used to produce EUV pots. Radiation for generating EUV radiation... may include a laser for exciting the fuel to provide the electrical equipment and a light source collector device for slurry (hereinafter also referred to as light source collection, and or a light source module) For example, 'power can be generated by directing a laser beam = burning enthalpy (4). particles of a suitable material (eg, tin), or a stream of a suitable gas or vaporized gas or clock vapor). The plasma is sent out of the field (for example, 'Ευ 赖 ) 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射. The light source collector device can include a containment structure configured to provide a vacuum environment to support the plasma. This radiation system is commonly referred to as a laser generated plasma (LPP) source. In addition to the firing, the electric light source is electrically destroyed. Destruction also produces 151181.doc 201133152 contaminants in the form of particles, such as thermal atoms, ions, nanoclusters, molecules composed of fuel atoms bonded to buffer gas atoms, and/or particles. Be Debris. Contaminants are output from the source to the radiation collector along with the desired light, and can cause damage to the normal incidence radiation collector and/or other parts. For example, using tin (four) droplets The LPP source to produce the desired EUV can produce a large amount of tin fragments in the form of atoms, ions, nanoclusters, and/or particles. It is desirable to prevent contaminants from reaching the light emitter collector (where the contaminants reach the light emitter collector) Reduce the EUV power), "Need to prevent contaminants from reaching the enclosure structure" P-knife (where 3 dyes reach the part of the enclosure structure can generate other problems in order to specifically block the ions, buffer gas can be used, but in such debris In the case of 'large buffer airflow may be required, this situation may require a larger system and a larger buffer gas supply. In order to reduce the volume of the buffer gas supply, the enclosure structure of the light source collector module may be defined and placed in the flush. The closed loop flow path of the gas and the flow path that causes the gas to pass through the closed loop. A heat exchanger can be used to flow the gas from the flow path. The heat is removed and a transitioner can be used to remove at least a portion of the contaminants from the winter gas flowing in the flow path. SUMMARY OF THE INVENTION The presence of contaminants can have not only deleterious effects on EUV power but also can be used to maintain the foregoing The detrimental effect of the operability of the pump that closes the loop flow. It is necessary to further alleviate these effects. According to an aspect of the invention, there is provided a light source collector device for a pole ultraviolet light micro-light source, wherein by excitation - The fuel is produced by providing a 15118l.doc 201133152 emitter violet m-ray, the light source collector device comprising: a containment structure that is constructed and configured to define a buffer for placement in the enclosure structure a gas-closed loop flow path; a pump constructed and arranged to cause the buffer gas to pass through the closed loop flow path; and a gas decomposer configured and configured to decompose the fuel material and the buffer gas material a compound 'and at least a portion of the buffer gas material is fed back into the closed loop flow path. In accordance with an aspect of the present invention, a lithography apparatus is provided comprising: an illumination system configured to condition a radiation beam; and a structure configured to hold a patterned component, the patterned component A pattern can be imparted to the radiation beam in a cross section of the radiation beam to form a patterned radiation beam; a substrate stage configured to hold a substrate; a projection system configured to pattern the radiation The light beam is projected onto a display portion of the substrate, and a light source collector device as described above. According to another aspect of the present invention, there is provided a method of fabricating a component comprising projecting a patterned beam of radiation onto a substrate, wherein in a light source collector device for manufacturing an extreme ultraviolet radiation lithography device, The radiation is generated by exciting-fuel to provide an ultraviolet (IV) emitter and the radiation is collected by a reflective collector comprising: causing a buffer gas to pass through - a closed loop flow path, a closed loop flow path traversing a region between the collector and the radiation-emitting plasma; decomposing a compound of a fuel material and a buffer gas material; and feeding at least a portion of the buffer gas material to the loop flow In the path. According to an aspect of the present invention, there is provided a lithography apparatus comprising a light

I5118t.doc S 201133152 IIS Build = Included: - Enclosed structure, which is wide and configured to enclose its loop flow path at the boundary of the enclosure structure; -i, which is constructed to slow the passage of one of the gases The closed loop flow path ... to cause the buffer and configuration to decompose the fuel material and the buffer gas material:: it is constructed to at least a partial composition of the buffer gas material, and will be; and - the collector, Construction and closed loop flow path material formation - the extreme ultraviolet 4 emitted by the plasma is covered by the fuel material: - illumination system, which is configured to two: the lithography device also covers and accounts for one, The collector ultraviolet radiation illuminating element field, the beam 'and a support structure, which are constructed to be held - Figure =1: the chemist element can impart a pattern to the = beam in the cross section of the light beam to form - The patterned light-emitting device also includes a substrate stage configured to hold the substrate, and a shadow system configured to project the patterned radiation beam onto a target portion. The invention provides a component manufacturing The method of generating a shot by exciting a fuel to provide an emitter of ultraviolet radiation to generate the shot; using a reflective collector in a light source collector device to "field" to cause a buffer gas to pass through a closure a loop flow path, the closed loop flow path traverses the region between the collector and the light-emitting emissive polymer; a compound that decomposes the fuel material and the buffer gas material; and feeds back at least a portion of the buffer hole body material To the closed loop flow path; patterning the collected light shot into a patterned radiation beam; and projecting the patterned radiation beam onto a substrate. 151181.doc 201133152 According to one aspect of the invention, the fuel as mentioned above contains tin, and the buffer gas as mentioned above comprises hydrogen. [Embodiment] Embodiments of the present invention will be described by way of example only with reference to the accompanying drawings, in which Figure 1 schematically depicts a lithography apparatus 10 comprising a light source collector device so in accordance with an embodiment of the present invention. The lithography apparatus includes: an illumination system (illuminator) IL' configured to condition a radiation beam B (eg, EUV radiation); a support structure (eg, a reticle stage) MT configured to support the patterned element (e.g., a reticle or proportional reticle) MA and coupled to a first locator pM configured to accurately position the patterned element; a substrate stage (e.g., ab circle) WT constructed to hold the substrate ( For example, coating a wafer of anti-surname agents, and connecting to a second locator PW configured to accurately position the substrate; and a projection system (eg, a reflective projection system) ps configured to The pattern imparted to the radiation beam B by patterning 70 pieces of MA is projected onto the target portion C (e.g., containing one or more grains) of the substrate w. The illumination system can include various types of optical components for guiding 'shaping or controlling radiation, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof.支撑 The support structure MT holds the patterned element MA in a manner that depends on the orientation of the patterned element MA, the design of the lithography apparatus, and other conditions, such as whether the patterned element is held in a vacuum environment. The support structure can hold the patterned components using mechanical, vacuum, electrostatic or other clamping techniques. The support structure can be, for example, a frame or table that can be fixed or movable as needed

S 151181.doc 201133152

moveable. The structure of the rites can only be in the desired position. The patterned component (e.g., relative to the projection system "patterned component" should be interpreted broadly to refer to any component of the cross-section of the radiation beam pattern in the cross-section of the substrate. The pattern imparted to the radiation beam can be a specific layer of work in an element (such as an integrated circuit) produced in the target portion. The patterned element can be transmissive or reflective. Examples of patterned components include a mask, a programmable mirror array, and a programmable LCD panel. The masks are well known in the lithography, including types such as binary, alternating phase shifting, and attenuating phase shifting, and various hybrid mask types. One example of a programmable mirror array is a small mirrored material configuration, each of which can be individually tilted to reflect the incident beam in different directions. The oblique mirrors impart a pattern to the Han beam that is reflected by the mirror matrix. The top-down system (like the lighting system) can include various types of optical components, ★ it reflective, magnetic, electromagnetic, electrostatic or other types of optical components' or any combination thereof. It may be necessary to use vacuum for EUV radiation because other gases may absorb excessive radiation. Because of &, vacuum walls and vacuum pumps provide vacuum to the entire beam path. As depicted by the 匕, the lithography device is of the type of reflection (for example, using a reflective mask). The micro-center can be a _ with two (dual stage) or two or more substrate stages (and / or two or more reticle stages). Here, the "multi-stage" 拽ϋ t ' can use additional stations in parallel, or can be performed on - or multiple stations 151181.doc 201133152 preliminary steps' while using - or multiple other stations for exposure. See Fig., ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, At least one element (eg, 'wind, bell or tin') material is converted to an electropolymerized state. In one such type of ridge, often referred to as laser-generated electro-convergence ("Lpp"), a fuel beam (such as a droplet, stream, or material of a material having a desired spectral emission element) can be used by using a lightning beam. Build) and make electricity damage. The light source collector module SO can be part of an Euv radiation system including a laser (not shown in FIG. 1), and the laser is used to provide a laser beam of intense fuel. _ shot), which is collected using radiation collection thieves placed in the light source collector module. For example, t# uses a c〇2 laser to provide a #ray beam for burning = hair. 'Laser and light source collector modules can be separated in this case. 'Do not think that the laser forms part of the lithography device. And the radiation (four) is transmitted from the laser to the light source collector module by, for example, a beam steering system that appropriately guides the mirror and/or the beam expander. In other cases, the source may be an integral part of the source collector module when the source is a discharge generating an electrosurgical Euv generator (often referred to as a DPP source). The illuminator IL may comprise an adjuster for adjusting the angular intensity distribution of the (four) beam. In general, at least the outer radial extent and/or the inner radial extent of the intensity distribution in the pupil plane of the illuminator can be adjusted (generally referred to as the outer portion of the mouth and the inner portion of σ, respectively). In addition, the illuminator ratio can include various other components, such as a facet mirror component and a faceted mirror component. The latter components can be part of the former 151181.doc -10- 201133152 regulator. The illuminator can be used to adjust the radiation beam to have a desired uniformity and intensity distribution in its cross section. The Han beam B is incident on a patterned component (such as a 'mask') that is held on a branch structure (for example, a mask table) Μτ, and is patterned by the patterning element. After the patterned element (eg, 'mask') is reflected, the light beam B is transmitted through the projection system pS, and the projection system PS focuses the beam onto the target portion of the substrate w. With the second positioner pw and position sensor The IF2 (eg, interferometric measuring element, linear encoder or capacitive sensor) substrate table WT can be accurately moved, for example, to position different target portions C on the path of the light beam B. Similarly, the first positioning The device pM and the other position sensor IF 1 can be used to accurately clamp the patterned member (e.g., reticle) MA with respect to the path of the radiation beam B. The reticle alignment marks M1, M2 and the substrate pair can be used. The calibration targets κΡ1, P2 are aligned with the patterned elements (eg, reticle) MA and substrate w. The depicted lithography apparatus can be used in at least one of the following modes: 1. In step mode, will be given Projecting the entire pattern to the radiation beam to the target at one time When the portion c is on, the support structure (for example, the mask stage) MT and the substrate stage WT are kept substantially stationary (that is, a single static exposure). Next, the substrate table WT is placed in the X and/or Y direction. Shifting so that different target portions C can be exposed. 2. In the scan mode, when the pattern to be given to the radiation beam is projected onto the target portion c, the support structure (for example, the mask table) Μτ and the substrate are synchronously scanned. WT (ie, 'single dynamic exposure). The substrate table WT can be determined by the magnification (reduction ratio) and image reversal characteristics of the projection system relative to the 151181.doc 201133152 support structure (eg, mask table) MT Speed and direction β 3. In another mode, when the pattern to be imparted to the radiation beam is projected onto the target portion c, the support structure (e.g., the reticle stage) 1 is kept substantially stationary, thereby holding Stylizing the patterned components and moving or scanning the substrate table WT. In this mode 'pulse-type radiation sources are typically used, and between each movement of the substrate table WT or between successive light pulses during the sweep, as needed And update Stylized patterned elements. This mode of operation can be easily applied to matte lithography using programmable patterning elements, such as the programmable mirror array of the type mentioned above. It can also be used as described above. Combination and/or variation of usage modes or completely different modes of use. Figure 2 shows the projection device 100 in more detail, including a light source collector device SO, an illumination system IL, and a projection system PS. The light source collector module is constructed and The enclosure structure 2201 is configured such that the vacuum environment can be maintained in the light source receiving (four) module s〇. In a typical arrangement, the atmosphere in the enclosure structure 22g is limited to "a gas having a relatively low absorption rate with in-situ emission. The device SO is part of the LPP light-emitting system; the laser is configured to deposit laser energy into a fuel such as xenon (Xe), tin (Sn) or clock (u), thereby producing eight tens of electron volts The high temperature ionization of the electron temperature is 21 电. The high energy light-emitting system generated during the de-excitation and recombination of the plasma is collected from the plasma, collected by the near-normal incidence collector optical instrument and focused into the opening in the enclosure structure 22, as above. An image ιρ of the radiation emission electric power t21Q is formed at or near the opening 221'. The image is often referred to as the intermediate focus. 15I181.doc • 12- 201133152 Subsequently 'radiation traverses the illumination system IL, the illumination system IL may comprise a surfaced field mirror element 22 and a pupilized pupil mirror element 24 configured to provide a radiation beam at the patterned element The angular distribution of 21 and the uniformity of the light intensity at the patterned component (and at substrate W). After the reflection of the light beam 21 at the patterned element μ A held by the fulcrum structure MT, a patterned beam 26 is then formed, and by the projection system to pass the patterned beam 26 via the reflective elements 28, 30 The image is imaged onto a substrate W held by a wafer stage or substrate table WT. In general, more components than those shown may be present in the illumination optics unit IL and the projection system PS. Instead of being a near normal incidence mirror of the collector mirror CO, a grazing incidence normal incidence collector can be applied. The collector is characterized by a nested reflector disposed axially symmetric about the optical axis, and the collector is preferably used in conjunction with a discharge generating plasma source (often referred to as a DPP source). The EUV radiation emitting plasma 21 is contained in a vacuum environment maintained in the envelope structure 22 of the light source collector module SO. In addition to EUV radiation, the plasma 21〇 also produces a large amount of fuel fragments in the form of high-energy ions, fuel vapors, neutral atoms, and tiny droplets of fuel. Among these types of fragments, the mirror coating of the collector c〇 is the most Harmful is high energy ions. The bombardment of the high energy ions to the collector can have deleterious effects on the reflectivity in the euv band and thus have a deleterious effect on the life of the collector. To increase collector life, the effect of energetic ions is mitigated by providing a buffer gas flowing along path 2 2 2 between collector C 〇 and plasma 21 0. Typically, hydrogen can be used as a buffer gas. As the energetic ions travel through the hydrogen, the energetic ions interact with the Hz molecules and release their energy into the buffer gas so that even if it reaches the collector surface, it does not have enough energy to permanently damage the collection. Surface. Typically, & streams having greater than 150 slm (standard liters per minute) will be used for current and future EUV sources. To reduce buffer gas supply, the light source collector module 5 includes a pump BPS within its enclosure structure 220, The pump BPS is constructed and configured to cause the buffer gas to pass through the closed loop flow path. Heat exchanger GC1 can be used to remove heat from the gas flowing in the flow path, and a filter (not shown in Figure 2) can be used to remove at least a portion of the contaminants and debris from the gas flowing in the flow path. It will be appreciated that the plasma 210 also produces a wood loss in the form of a fuel-buffer gas compound. For example, in this embodiment, the fuel may be tin, and in this case, the contaminants include tin hydride such as SnH4 and/or SnHx. According to one aspect of an embodiment of the present invention, a tin hydride decomposer TD1 is provided within the enclosure structure 22A. It will be appreciated that the percentage of moiré can be up to several percent in the gas stream. In order to return the supply to the enclosure structure 220, it is preferred to remove the hydrogen hydride by decomposition (rather than by filtration). One aspect of the present invention provides a tin hydride decomposer in which the decomposition of tin hydride is based on a first-order heterogeneous reaction. The reaction has a reaction rate which increases with an increase in temperature. Therefore, it is necessary to construct a tin hydride decomposer TD1 and It is configured such that it can operate at high temperatures and facilitates sufficient contact between the SnH4 or SnHx molecules and the resolver surface by providing a sufficiently extended or long-working interaction region on the surface of the resolver. In the examples, the decomposition of tin hydride not only leads to a lower risk of pump failure, but also to the λ* of the buffer gas, which is lower because of the decomposed hydrogen being fed back into the enclosure structure. In one aspect of the invention, and as illustrated in FIG. 3, the closed loop flow is achieved by forming the enclosure structure 220 into a chamber 31〇, the chamber system and the guide outside the chamber. 320 is in fluid communication, and wherein the pump Bps and the gas decomposer TD1 are disposed in the guide. In principle, the gas decomposer can be placed upstream or downstream of the pump BPS. In both cases, the tin hydride pair collection can be alleviated Deterioration of the life of the device and the life of the pump. The supply of the external conduit 320 can be configured such that the K gas caused by the decomposition of SnH4 or δηΗχ can be transferred to the chamber 31〇 through one or more inlets 330, the inlet 33 being placed Immediately adjacent to the region between collector C0 and plasma 210, where the desired buffer gas is least contaminated. As schematically depicted in Figure 3, one or more clean hydrogen sources Q1 & Provided in fluid communication with the enclosure structure 220, or more specifically, with the chamber 3丨〇 to compensate for hydrogen loss in the closed loop flow. Additionally, one or more valves may be used (such as Valve CV1) in Figure 3 controls flow. Gas sources Q1 and Q2 supply cleaning h2 to chamber 3 1 〇, the amount of flow being the smaller and supplied clean hydrogen fraction of the stream recycled in the system ( ~10%). In one implementation The amount of clean hydrogen stream supplied is the fraction of the stream recycled in the system in the range of 5% to 2 G%. The control valve cvi is used to regulate the supplied stream. According to the state #, the pump It may be a system comprising a plurality of pumps arranged in series, or a plurality of pumps arranged in parallel, or a plurality of pumps arranged in series in combination with a plurality of pumps arranged in parallel. These may be booster pumps. In the embodiment, the gas decomposer TD1 is disposed upstream of the pump Bps as described in 151181.doc -15·201133152. The contaminated H2 from the chamber 31〇 is passed through the tin hydride decomposer TD1 '纟 纟 纟 分解 TD TD1, A Most high energy tin hydride decomposes i to prevent Sn deposition in the booster pump stack Bps. In accordance with the present invention, a heat exchanger GC1 (also referred to as a gas cooler GC1) is provided that is constructed and configured to remove heat from a motor that is maneuvering in a flow path that traverses an external guide, and is disposed in Between the gas decomposer TD1 and the pump BPS. In the cooler Gc], the gas stream was cooled to room temperature. At this temperature, the decomposition of the tin hydride takes more than 10 minutes, and is 1 minute long enough for the SnH4 or SnHx molecules to travel through the booster pump stack Bps without decomposition. In addition, the gas can be cooled below room temperature to reduce or even avoid decomposition of SnH4 or SnHx on the hot portion of the pump Bps. In accordance with an aspect of the present invention, and as further illustrated in FIG. 4, in an embodiment, the guide 320 may include an outlet disposed between the pump Bps and the gas deactuator TD1 to establish and reduce the system. (abatement system) A § fluid connection; valve CV2 is configured to control the flow of gas leaving the enclosure structure and directed to the abatement system AS. A smaller fraction (~10%) of the stream recycled in the system can be directed to the abatement system AS. In one embodiment, the fraction that is directed to the abatement system AS can be between 5% and 20°/ of the stream recycled in the system. The rate within the range. In an embodiment and as illustrated in Figure 5, with respect to the embodiment illustrated in Figure 4 and described above, a supplemental gas decomposer TD2 disposed downstream of the pump BPS in the conduit 320 is provided. It will be appreciated that when the relative pressure drop across a gasification tin splitter of the type described herein is relatively high (as may be the case when the gas decomposer is operated at a relatively low pressure relative to the vehicle), it may be difficult to achieve a relatively high

S 151181.doc -16· 201133152 Decomposition efficiency. The gas decomposer TD1 operates at a relatively low pressure relative to the pressure at which the gas decomposer TD2 is operated, such that, as mentioned above, at least a majority of the high energy hydrogen hydride is decomposed ' thereby preventing Sn in the pressurized pump stack Bps Deposition. In addition, the supply of the subsidized gas decomposer can further improve the total enthalpy decomposition efficiency of the light source collection module. In the illustrated embodiment, the pump BPS can compress the gas to more than one-fifth of the original, such that the gas splitter TD2 can operate at a relatively high pressure relative to the pressure at which the gas splitter TD1 operates. Relatively low relative pressure drop. This supply can reduce the effects of less favorable conditions for the operation of the gas decomposer TD1. In accordance with an aspect of the present invention' and as further illustrated in FIG. 5, a heat exchanger GH can be provided that is constructed and configured to provide heat to the gas flowing in the flow path and in the conduit 32〇 It is disposed between the auxiliary gas decomposer TD2 and the pump BPS. After the gas is compressed to the original 1/5 or more by the pump bpS, the gas then enters the gas heater gh' at the gas heater GH, and the gas is heated to be available for effective SnH4 or SnHx in the tin hydride resolver TD2. Decomposed temperature. After traversing the resolver τ〇2, the gas may be cooled in a heat exchanger or gas cooler GC2 that is constructed and configured to remove heat from the gas flowing in the flow path, and It is disposed downstream of the auxiliary gas decomposer TD2 in the guide path 320. Next, substantially no flow can be directed through the particle filter PF and the gas filter gf such that substantially clean h2 is supplied back to the chamber 310. In one embodiment, the gas decomposer as described above is constructed and configured such that the characteristic time for S11H4 or SnHx decomposition is greater than the retention of SnH4 or SnHx molecules when crossing the 151181.doc 17 201133152 resolver. 4 time tres. Equation (2) expresses tres as follows: where P(iv) is the pressure in the resolver, A[mA2] is the average resolver cross section, and L[m] is the length of the gas traveling through the resolver. The total airflow in the equation (2) is represented by Q; q can be expressed in [Pa.ml/s] or in standard liters per minute (nine). For example, the flow can be 300 slm, the resolver The cross section may correspond to a cross section of a circular pipe having a diameter of 4 mm, the gas travel distance in the resolver may be 5 m, the resolver temperature may be 5 〇〇t:, and the pressure may be 12 〇帕斯卡. In this case, the residence time tres is 〇〇52 seconds. In Figure 6, the characteristic time tdee of SnH4 or SnHx decomposition is plotted in seconds along the vertical axis, along with the horizontal axis Celsius varies with unit temperature. Available from publicly available According to the data obtained at 20. (: and 100. (:: between the points; the data at a temperature greater than 10 (the temperature of TC). At 5 ° ° C, the characteristic time w is about 1 second It is substantially larger than the residence time tres calculated in the above paragraph. In order to match the two numbers tdec to tres, it is necessary to increase the gas travel length, gas pressure (which may be limited by source operating conditions), and resolver temperature. The residence time of the SnH4 or SnHx molecules in the device should be large enough so that the molecule has enough time to diffuse to the surface of the resolver. The characteristic diffusion length is 151I81.doc -18- (3) 201133152 degrees Ldiff is expressed as: [mail=^Dctres where Dc is the S11H4 or 811 diffusion coefficient. The characteristic length d between the resolver surfaces at the cross section of the resolver should be equal to the diffusion length.

The description 'pair' has a circular cross-section resolver TD, and the insert IS is used to provide the desired characteristic length d. The same principle can be applied to a resolver having other shapes in cross section. The following simple relationship can be used to calculate the number η of cells CE in the insert:

(4) where D is the diameter of the pipe, for example, the diameter of the cylindrical wall of the resolver as illustrated in Fig. 7. / In order to increase the gas travel length in the step-by-step manner, the inserted person IS can be twisted around the axis of symmetry SA of the decomposition TD, as shown in FIG. It will be appreciated that the torsion 2 is configured to keep the size of the decomposition @ relatively small and maintain the still acceptable flow conductance of the torsion junction.柢龈The present invention .......... Selecting a pre-coverage using Sn or another metal (e.g., copper (Cu)). . The g _ solution can improve the decomposition efficiency of SnH4. It will be appreciated that tin or steel may be used to cover at least a portion of the surface of the insert IS or at least a portion of the decomposed crying of the stream exposed to the fuel or buffer gas compound may be used. °° Internal surface I5118I.doc 201133152 In any of the embodiments described above, the gas decomposer tdi and/or TD2 can be operated at high temperatures. For gas decomposers at temperatures below 232 < t (tin melting temperature), tin is deposited on the walls of the cracker. When the large Sn accumulates in the resolver, the resolver should be replaced. Alternatively, keep the resolver at a temperature of 232 C. In this case, and as schematically illustrated in Figure 9, liquid tin 95 can be directed by gravity to one or more inserts IS to the reservoir of the resolver, the reservoir being configured to capture the liquid Tin 950 and liquid tin 950 are directed to drain 93 93. In this embodiment, replacement of the gas decomposer may not be required. In Fig. 9, the hydrogen sulfide decomposers 900 and 94 are vertically and horizontally oriented, respectively. The slanting bar schematically illustrates the insert IS. Opening 920 is the inlet for the mixture of hydrogen and tin hydride, and opening 910 is the outlet for hydrogen. In an embodiment, the heat exchanger GC1 is configured to cool the gas in the stream to a temperature of about 3 Torr, or a temperature in the range of about 2 (rc to about 4 Torr). Design of the gas cooler It can be similar to the above design of the gas decomposer. The gas residence time in the gas cooler GC1 is desirably equivalent to the characteristic time of the heat diffusion from the gas to the cooler wall. The residence time is given by Equation 2. It will be used for heat. The characteristic length of the diffusion is expressed as:

Lh = 14—~ i cpP m v (5) where k is the thermal conductivity, Cp is the gas heat capacity, and p is the gas density. Again - human, as far as the resolver is concerned, an insert can be used to control the characteristic length d between the cold bandit surfaces at the cross section, see Figure 7. The characteristic length d should be equal to the heat £151181.doc •20- 201133152 Diffusion long-term. Phase (4) can be used for coolers with other shapes in cross section. Equation (4) can be used to calculate the number of cells in the insert η ' where Lh is replaced with Lh. Keep the colder surface at a strange temperature close to room temperature. It will be appreciated that the gas cooler can have - additional functionality: by cooling the gas stream from the source to a temperature below -52t, the tin hydride is liquefied and the tin hydride can be removed by the bleeder system. Although reference may be made specifically to the use of a lithography apparatus in the manufacture of tantalum, it should be understood that the lithographic apparatus described herein may have other applications such as manufacturing integrated optical systems, guidance for magnetic memory, and Home test patterns, flat panel displays, liquid crystal displays (LCDs), thin film magnetic heads, and the like. The use of the yoke example of the present invention in the context of the content of optical lithography is specifically referenced above, but it should be understood that the present invention can be used in other applications (eg, 'imprint lithography'' and allowed in the context of the content. The time is not limited to optical micro-lighting and "beam" encompasses all types of ultraviolet (UV) radiation (eg, wavelength) having the term as used herein in the range of 5 nm to 20 nm. Although the specific embodiments of the invention have been described above, it will be understood that the invention may be practiced in other ways that are described in the manner described. For example, the invention may take the form of a computer program containing a description The method disclosed in the text can be used to cry the green person, or to read a plurality of sequences; or a data storage medium (for example, a semi-conductor, a dry conductor C memory, a disk or a disc), There is a computer program stored therein 151181.doc • 21 - 201133152. The above description is intended to be illustrative and not limiting. Therefore, it will be apparent to those skilled in the art that the application can be made without departing from the invention. In the case of the scope of the patent scope, the modification of the present invention is described. [Schematic Description of the Drawings] FIG. 1 depicts a lithography apparatus according to an embodiment of the present invention; Details of the light source collector device, and details of the illumination system and projection system of the lithography device; Figure 3 depicts a buffer gas source path system; pump and gas resolver Closed Flow Figure 4 depicts the system of Figure 3, which further includes a derating system; Figure 5 depicts the system of Figure 4, which further includes a supplemental gas decomposer; Figure 6 illustrates the characteristic time of SnH4 or SnHx decomposition as a function of temperature Figure 7 depicts a design of a circular gas decomposer with an insert for providing a specific characteristic distance d between the resolver surfaces; Figure 8 depicts a gas decomposer with a torsional insert; and Figure 9 depicts A gas decomposer in a vertical orientation and a gas decomposer in a horizontal orientation according to an embodiment of the present invention.

21 Fortunately S-beam 22 facet mirror element 24 facet mirror element 151181.doc -22· S 201133152 26 patterned beam 28 reflective element 30 reflective element 100 lithography device / projection device 210 extreme ultraviolet ( EUV) Radiated Emission Plasma 220 Enclosure Structure 221 Opening 222 Path Between Collector and Plasma 310 Chamber 320 Guide 330 Inlet 900 Hydrogen Tin Decomposer 910 Opening 920 Opening 930 Drain 940 Hydrogen Tin Decomposer 950 Liquid Tin AS Reduction System B Radiation Beam BPS Pump / Booster Pump Stack C Target Part CE Insert Unit CO Near Near Normal Incident Collector Optical Instrument / Collector Mirror / Collector CV1 Valve 151181.doc -23- 201133152 CV2 Valve GC1 Heat exchanger / gas cooler GC2 heat exchanger / gas cooler GF gas filter GH heat exchanger / gas heater IF radiation emission plasma image IF1 position sensor IF2 position sensor IL lighting system / illuminator / Illumination Optical Instrument Unit IS Insert LA Laser MA Patterned Element MT Support Structure Ml Mask Alignment Mark M2 Shield alignment mark PF particle filter PM first positioner PS projection system PW second positioner PI substrate alignment mark P2 substrate alignment mark Q1 clean hydrogen source/gas source Q2 clean hydrogen source/gas source SA resolver symmetry Axis 151181.doc -24- 201133152 so Light source collector device / light source collector module TD Decomposer TD1 Hydrogen tin decomposer / gas decomposer TD2 Subsidiary gas decomposer / hydrogen sulfide decomposer W substrate WT substrate table 151181.doc • 25-

Claims (1)

201133152 VII. Scope of application for patents·· 1. Kind of source device for the extreme ultraviolet radiation in the micro-small 藓 勒 勒 勒 勒 勒 勒 勒 勒 勒 勒 — 燃料 燃料 燃料 燃料 燃料 燃料 燃料 燃料 燃料 燃料 燃料 燃料 燃料 燃料 燃料 燃料 燃料 燃料 燃料 燃料 燃料 燃料 燃料The light source collector device comprises: a surrounding structure, which is constructed and embossed by Wen Fuhan to define a buffer gas in the enclosure structure - a closed loop flow path; And configured to cause the buffer gas to pass through the loop flow path; and -> a body knife disassembler configured and configured to decompose a fuel material and a buffer pore material compound, and at least the buffer gas material — The mouth p-knife feeds back to the s-closed loop flow path. 2. The light source collector device of claim 1, wherein the enclosure structure comprises a cavity to which the fluid communication is in fluid communication with a conduit outside the chamber and wherein the pump and the gas resolver are disposed In the guide. 3. The source collector device of claim 2, wherein the gas decomposer is positioned upstream of the pump. 4. The light source collector device of claim 3, wherein a heat exchanger constructed and configured to remove heat from the gas flowing in the flow path is positioned between the gas splitter and the pump. 5. The source collector device of claim 4, wherein a supplemental gas decomposer is positioned downstream of the pump in the conduit. 6. The light source collector device of claim 5, wherein a second heat exchanger constructed and configured to provide heat to the gas flowing in the flow path is positioned in the auxiliary gas decomposer in the guide path Between the pumps. 151181.doc 201133152: The light source collector device of item 6, wherein a third heat exchanger constructed and configured to remove heat from the gas flowing in the moving path is positioned in the auxiliary gas decomposition in the Downstream. 8. The light source collector device of any one of claims 3, wherein the conduit includes an outlet and a reduction system between the pump and the gas decomposer, the system of decrementing and the sigma A fluid connection is made and constructed and configured to provide and control an airflow exiting the enclosure structure. The light source collector device of any of clauses 1 to 7, wherein the enclosure structure is formed to have an inlet connected to a source of buffer gas. 10: The light source collector device of any one of items 1 to 7, wherein the fuel is 锡3 tin, and the buffer gas contains hydrogen. Wherein the compound is hydrogenated. 11. The light source collector device of claim 1 is tin 0 12 · such as any of the items 1 to 7 jg, ©丨/. A precursor collector device wherein the gas/knife solution comprises a conduit surrounding at least one of the inserts. 13. The light source collector device of any of clauses 1 to 7, wherein the gas decomposer comprises a conduit surrounding one of the at least one torsional insert. 14. The light source collector device of claim ,), wherein the gas decomposition piano comprises a structure maintained at a temperature above one of 232t. 15. The light source collector device of claim 14 wherein the structure comprises a reservoir and a drain. A lithography apparatus comprising: an illumination system configured to adjust a radiation beam; a support structure configured to hold a patterned element, the pattern 151181.doc 201133152 chemical element being capable of The radiation-pattern is applied to the radiation beam in a cross-section of the beam to pattern the radiation beam; a:: station, which is constructed to hold a substrate; the system is configured to Projecting the patterned radiation beam onto a target portion of the substrate; and a source collector device as claimed in any of claims 1 through 11. A lithography apparatus comprising: a light source collector device comprising: a second enclosure structure constructed and arranged to define a buffer gas-closed loop flow path in the enclosure structure, Constructed and configured to cause the buffer gas to pass through the closed loop flow path, a gas decomposer constructed and configured to decompose the fuel material 盥 buffer gas material servant 铷n W ^ /, σ 'and At least a portion of the buffer gas material is fed back into the closed loop flow path, and a collector is constructed and configured to collect the extreme ultraviolet radiation emitted by the plasma formed from the fuel material; An illumination system 'configured to adjust the collected ultraviolet light and form a radiation beam; a support structure' configured to hold a patterned element, the patterned element being capable of being illuminated in the radiation a pattern is applied to the radiation beam to form a patterned radiation beam; a substrate stage configured to hold the substrate; and a projection system , Which is configured by a patterned light to the light beam cast 15I181.doc 201133152 18. Movies onto a target portion of one of the substrates. A component manufacturing method comprising: generating the light shot by exciting-fuel to provide one of an emitter ultraviolet light, and collecting the light collector by using a light source collector mounted on a reflection collector of the CL CL CL CL The radiation-promoting gas passes through a closed loop flow path that traverses a region between the 4 collector and the radiation-emitting plasma; decomposing the fuel material and the buffer gas material to buffer At least one of the moving paths of the gaseous material; the compound; is fed back to the closed turbulent stream 19.20. The patterned || is patterned into a patterned (four) beam; and the patterned radiation beam is projected to On a substrate. The method of claim 18 wherein the fuel comprises a kick and the buffer gas comprises hydrogen. The method of claim 19 wherein the compound is tin hydride. 151181.doc 4-