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TW200710210A - Slurry for chemical mechanical polishing of aluminum - Google Patents

Slurry for chemical mechanical polishing of aluminum

Info

Publication number
TW200710210A
TW200710210A TW095123381A TW95123381A TW200710210A TW 200710210 A TW200710210 A TW 200710210A TW 095123381 A TW095123381 A TW 095123381A TW 95123381 A TW95123381 A TW 95123381A TW 200710210 A TW200710210 A TW 200710210A
Authority
TW
Taiwan
Prior art keywords
slurry
aluminum
mechanical polishing
chemical mechanical
less
Prior art date
Application number
TW095123381A
Other languages
English (en)
Other versions
TWI333974B (en
Inventor
Allen Daniel Feller
Anne Miller
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of TW200710210A publication Critical patent/TW200710210A/zh
Application granted granted Critical
Publication of TWI333974B publication Critical patent/TWI333974B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00Brightening metals by chemical means
    • C23F3/02Light metals
    • C23F3/03Light metals with acidic solutions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW095123381A 2005-06-29 2006-06-28 Slurry for chemical mechanical polishing of aluminum TWI333974B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/172,093 US7731864B2 (en) 2005-06-29 2005-06-29 Slurry for chemical mechanical polishing of aluminum

Publications (2)

Publication Number Publication Date
TW200710210A true TW200710210A (en) 2007-03-16
TWI333974B TWI333974B (en) 2010-12-01

Family

ID=37056487

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095123381A TWI333974B (en) 2005-06-29 2006-06-28 Slurry for chemical mechanical polishing of aluminum

Country Status (5)

Country Link
US (1) US7731864B2 (zh)
CN (1) CN101208399B (zh)
DE (1) DE112006001550T5 (zh)
TW (1) TWI333974B (zh)
WO (1) WO2007002915A2 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7731864B2 (en) 2005-06-29 2010-06-08 Intel Corporation Slurry for chemical mechanical polishing of aluminum
KR101085721B1 (ko) 2009-02-10 2011-11-21 주식회사 하이닉스반도체 반도체 소자 및 그 제조방법
US8119529B2 (en) * 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
US8946049B2 (en) 2012-04-11 2015-02-03 International Business Machines Corporation Replacement gate structures and methods of manufacturing
CN104576356B (zh) * 2013-10-22 2018-05-08 中芯国际集成电路制造(上海)有限公司 一种化学机械研磨的方法
CN104745084B (zh) * 2013-12-25 2018-09-14 安集微电子(上海)有限公司 一种用于铝的化学机械抛光液及使用方法
CN104073170B (zh) * 2014-06-24 2015-11-18 江苏天恒纳米科技股份有限公司 一种铝合金表面超精密加工专用纳米浆料及其制备方法
US9484212B1 (en) * 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US10035929B2 (en) * 2015-11-30 2018-07-31 Taiwan Semiconductor Manufacturing Co., Ltd. pH-adjuster free chemical mechanical planarization slurry
CN109868447B (zh) 2017-12-01 2022-03-25 通用电气公司 用于降低表面粗糙度的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020111024A1 (en) 1996-07-25 2002-08-15 Small Robert J. Chemical mechanical polishing compositions
US6083419A (en) 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
KR100324311B1 (ko) * 1998-10-26 2002-05-13 김영환 반도체소자의화학기계연마공정용슬러리제조방법
WO2001030928A1 (en) 1999-10-28 2001-05-03 Cabot Microelectronics Corporation Chemical mechanical polishing compositions and systems
US6334880B1 (en) * 1999-12-07 2002-01-01 Silbond Corporation Abrasive media and aqueous slurries for chemical mechanical polishing and planarization
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US6913634B2 (en) * 2003-02-14 2005-07-05 J. M. Huber Corporation Abrasives for copper CMP and methods for making
JP2005138197A (ja) * 2003-11-04 2005-06-02 Fujimi Inc 研磨用組成物及び研磨方法
US7390744B2 (en) * 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
US7731864B2 (en) 2005-06-29 2010-06-08 Intel Corporation Slurry for chemical mechanical polishing of aluminum

Also Published As

Publication number Publication date
US7731864B2 (en) 2010-06-08
WO2007002915A2 (en) 2007-01-04
CN101208399A (zh) 2008-06-25
CN101208399B (zh) 2011-07-06
US20070004209A1 (en) 2007-01-04
WO2007002915A3 (en) 2007-06-07
TWI333974B (en) 2010-12-01
DE112006001550T5 (de) 2008-04-17

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees