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TW200603264A - Mask, method for producing the same, deposition method, electronic device, and electronic apparatus - Google Patents

Mask, method for producing the same, deposition method, electronic device, and electronic apparatus

Info

Publication number
TW200603264A
TW200603264A TW094118774A TW94118774A TW200603264A TW 200603264 A TW200603264 A TW 200603264A TW 094118774 A TW094118774 A TW 094118774A TW 94118774 A TW94118774 A TW 94118774A TW 200603264 A TW200603264 A TW 200603264A
Authority
TW
Taiwan
Prior art keywords
mask
producing
same
electronic device
electronic apparatus
Prior art date
Application number
TW094118774A
Other languages
English (en)
Other versions
TWI310584B (en
Inventor
Shinichi Yotsuya
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of TW200603264A publication Critical patent/TW200603264A/zh
Application granted granted Critical
Publication of TWI310584B publication Critical patent/TWI310584B/zh

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
TW094118774A 2004-06-21 2005-06-07 Mask, method for producing the same, deposition method, electronic device, and electronic apparatus TWI310584B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004182459A JP2006002243A (ja) 2004-06-21 2004-06-21 マスク、マスクの製造方法、成膜方法、電子デバイス、及び電子機器

Publications (2)

Publication Number Publication Date
TW200603264A true TW200603264A (en) 2006-01-16
TWI310584B TWI310584B (en) 2009-06-01

Family

ID=34936863

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094118774A TWI310584B (en) 2004-06-21 2005-06-07 Mask, method for producing the same, deposition method, electronic device, and electronic apparatus

Country Status (6)

Country Link
US (1) US20050282368A1 (zh)
EP (1) EP1609879A1 (zh)
JP (1) JP2006002243A (zh)
KR (1) KR100767903B1 (zh)
CN (1) CN100389479C (zh)
TW (1) TWI310584B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI693292B (zh) * 2015-06-17 2020-05-11 日商V科技股份有限公司 成膜遮罩及成膜遮罩之製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4379394B2 (ja) * 2005-07-27 2009-12-09 セイコーエプソン株式会社 マスク及び有機el素子の製造方法
JP4692290B2 (ja) * 2006-01-11 2011-06-01 セイコーエプソン株式会社 マスクおよび成膜方法
GB2444491A (en) * 2006-12-06 2008-06-11 Univ Muenster Wilhelms Selective growth of organic molecules
EP2177524A4 (en) 2007-08-16 2011-12-14 Fujifilm Corp HETEROCYCLIC COMPOUND, ULTRAVIOLET RADIATION ABSORBER, AND COMPOSITION COMPRISING THE ULTRAVIOLET RADIATION ABSORBER
JP2011184720A (ja) * 2010-03-05 2011-09-22 Ricoh Co Ltd パターン形成用マスク及び該マスクを用いた成膜装置
CN101984135B (zh) * 2010-11-19 2013-07-10 光驰科技(上海)有限公司 成膜基板夹具及其成膜装置
US10562055B2 (en) 2015-02-20 2020-02-18 Si-Ware Systems Selective step coverage for micro-fabricated structures
CN110592526A (zh) * 2018-06-12 2019-12-20 张东晖 金属蒸镀遮罩结构
KR102618039B1 (ko) * 2018-08-29 2023-12-27 삼성디스플레이 주식회사 마스크 조립체, 이를 포함한 표시 장치의 제조장치 및 표시 장치의 제조방법

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US4004044A (en) * 1975-05-09 1977-01-18 International Business Machines Corporation Method for forming patterned films utilizing a transparent lift-off mask
JPS5258606A (en) * 1975-11-07 1977-05-14 Hitachi Ltd Printing metal mask
JPS59125667A (ja) * 1983-01-07 1984-07-20 Nec Corp ダイオ−ド
US4715940A (en) * 1985-10-23 1987-12-29 Gte Products Corporation Mask for patterning electrode structures in thin film EL devices
JPH0736361B2 (ja) * 1989-03-22 1995-04-19 株式会社村田製作所 抵抗材料、その製造方法およびそれを用いた抵抗ペースト
JPH0987828A (ja) * 1995-09-28 1997-03-31 Murata Mfg Co Ltd 電子部品の電極を形成する方法およびそれに用いる装置
JP3326088B2 (ja) * 1996-03-14 2002-09-17 株式会社東芝 半導体装置およびその製造方法
JPH1136061A (ja) * 1997-07-17 1999-02-09 Mitsubishi Materials Corp 物理蒸着装置のマスキング治具
US6214413B1 (en) * 1999-01-13 2001-04-10 Applied Materials, Inc. Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck
JP2000318334A (ja) * 1999-05-12 2000-11-21 Tdk Corp 印刷用メタルマスクおよびその製造方法
AU2001243656B2 (en) * 2000-03-17 2005-09-29 President And Fellows Of Harvard College Cell patterning technique
KR100631933B1 (ko) * 2000-06-28 2006-10-04 주식회사 하이닉스반도체 스텐실 마스크의 제조 방법
JP3674573B2 (ja) * 2001-06-08 2005-07-20 ソニー株式会社 マスクおよびその製造方法と半導体装置の製造方法
JP2003282252A (ja) * 2002-03-26 2003-10-03 Seiko Epson Corp マスクの製造方法、有機エレクトロルミネッセンス装置の製造方法、有機エレクトロルミネッセンス装置
JP2005086147A (ja) * 2003-09-11 2005-03-31 Sony Corp 金属単層膜形成方法、配線形成方法、及び、電界効果型トランジスタの製造方法
US6989327B2 (en) * 2004-01-31 2006-01-24 Hewlett-Packard Development Company, L.P. Forming a contact in a thin-film device
US20050235845A1 (en) * 2004-04-27 2005-10-27 Hollis Michael R Modular stencil system having interlocking stencils
US20060083927A1 (en) * 2004-10-15 2006-04-20 Zyvex Corporation Thermal interface incorporating nanotubes
JP2006269599A (ja) * 2005-03-23 2006-10-05 Sony Corp パターン形成方法、有機電界効果型トランジスタの製造方法、及び、フレキシブルプリント回路板の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI693292B (zh) * 2015-06-17 2020-05-11 日商V科技股份有限公司 成膜遮罩及成膜遮罩之製造方法

Also Published As

Publication number Publication date
CN100389479C (zh) 2008-05-21
TWI310584B (en) 2009-06-01
US20050282368A1 (en) 2005-12-22
EP1609879A1 (en) 2005-12-28
CN1713342A (zh) 2005-12-28
KR20060048438A (ko) 2006-05-18
JP2006002243A (ja) 2006-01-05
KR100767903B1 (ko) 2007-10-18

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees