SG11201606392UA - High mobility strained channels for fin-based nmos transistors - Google Patents
High mobility strained channels for fin-based nmos transistorsInfo
- Publication number
- SG11201606392UA SG11201606392UA SG11201606392UA SG11201606392UA SG11201606392UA SG 11201606392U A SG11201606392U A SG 11201606392UA SG 11201606392U A SG11201606392U A SG 11201606392UA SG 11201606392U A SG11201606392U A SG 11201606392UA SG 11201606392U A SG11201606392U A SG 11201606392UA
- Authority
- SG
- Singapore
- Prior art keywords
- fin
- nmos transistors
- high mobility
- strained channels
- based nmos
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/62—Fin field-effect transistors [FinFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
- H10D30/0245—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/405—Orientations of crystalline planes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/853—Complementary IGFETs, e.g. CMOS comprising FinFETs
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2014/032039 WO2015147836A1 (en) | 2014-03-27 | 2014-03-27 | High mobility strained channels for fin-based nmos transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201606392UA true SG11201606392UA (en) | 2016-09-29 |
Family
ID=54196153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201606392UA SG11201606392UA (en) | 2014-03-27 | 2014-03-27 | High mobility strained channels for fin-based nmos transistors |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US10153372B2 (en) |
| EP (1) | EP3123518A4 (en) |
| KR (2) | KR20210005324A (en) |
| CN (1) | CN106030818B (en) |
| SG (1) | SG11201606392UA (en) |
| TW (1) | TWI637508B (en) |
| WO (1) | WO2015147836A1 (en) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG11201606392UA (en) | 2014-03-27 | 2016-09-29 | Intel Corp | High mobility strained channels for fin-based nmos transistors |
| US10269968B2 (en) * | 2015-06-03 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device including fin structures and manufacturing method thereof |
| US10361219B2 (en) * | 2015-06-30 | 2019-07-23 | International Business Machines Corporation | Implementing a hybrid finFET device and nanowire device utilizing selective SGOI |
| US9859430B2 (en) * | 2015-06-30 | 2018-01-02 | International Business Machines Corporation | Local germanium condensation for suspended nanowire and finFET devices |
| US9905649B2 (en) * | 2016-02-08 | 2018-02-27 | International Business Machines Corporation | Tensile strained nFET and compressively strained pFET formed on strain relaxed buffer |
| CN107104144B (en) * | 2016-02-22 | 2019-12-27 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and method for manufacturing the same |
| US20170250268A1 (en) * | 2016-02-25 | 2017-08-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin field effect transistor and method for fabricating the same |
| US9917154B2 (en) | 2016-06-29 | 2018-03-13 | International Business Machines Corporation | Strained and unstrained semiconductor device features formed on the same substrate |
| TWI624064B (en) * | 2016-08-29 | 2018-05-11 | 雋佾科技有限公司 | Wavy fet structure |
| US11088033B2 (en) * | 2016-09-08 | 2021-08-10 | International Business Machines Corporation | Low resistance source-drain contacts using high temperature silicides |
| TW202425084A (en) * | 2016-12-12 | 2024-06-16 | 美商應用材料股份有限公司 | Method of forming strained channel layer |
| US10340384B2 (en) | 2017-11-30 | 2019-07-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing fin field-effect transistor device |
| CN110047926B (en) | 2018-01-15 | 2023-08-29 | 联华电子股份有限公司 | Semiconductor device and manufacturing method thereof |
| US10665770B2 (en) * | 2018-03-06 | 2020-05-26 | Intel Corporation | Fin strain in quantum dot devices |
| US11054748B2 (en) | 2018-09-21 | 2021-07-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dummy insertion for improving throughput of electron beam lithography |
| US11094597B2 (en) * | 2018-09-28 | 2021-08-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and formation method of semiconductor device with fin structures |
| CN109671779B (en) * | 2018-11-22 | 2022-05-10 | 长江存储科技有限责任公司 | Semiconductor device and forming method thereof |
| US11569231B2 (en) | 2019-03-15 | 2023-01-31 | Intel Corporation | Non-planar transistors with channel regions having varying widths |
| US11670551B2 (en) | 2019-09-26 | 2023-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interface trap charge density reduction |
| DE102020131030A1 (en) | 2020-05-12 | 2021-11-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | SILICON CHANNEL STARTING |
| US11670723B2 (en) * | 2020-05-12 | 2023-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Silicon channel tempering |
| US20230095191A1 (en) * | 2021-09-24 | 2023-03-30 | Intel Corporation | Transistors with reduced epitaxial source/drain span via etch-back for improved cell scaling |
| US12261203B2 (en) * | 2021-10-14 | 2025-03-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device structure with gate stack and method for forming the same |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6475869B1 (en) | 2001-02-26 | 2002-11-05 | Advanced Micro Devices, Inc. | Method of forming a double gate transistor having an epitaxial silicon/germanium channel region |
| US7358121B2 (en) * | 2002-08-23 | 2008-04-15 | Intel Corporation | Tri-gate devices and methods of fabrication |
| US7154118B2 (en) * | 2004-03-31 | 2006-12-26 | Intel Corporation | Bulk non-planar transistor having strained enhanced mobility and methods of fabrication |
| US20060003309A1 (en) | 2004-07-02 | 2006-01-05 | Akin James W | Method of frozen donor egg banking |
| KR100618852B1 (en) * | 2004-07-27 | 2006-09-01 | 삼성전자주식회사 | Semiconductor device with high operating current |
| US7348284B2 (en) | 2004-08-10 | 2008-03-25 | Intel Corporation | Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow |
| US20070090416A1 (en) * | 2005-09-28 | 2007-04-26 | Doyle Brian S | CMOS devices with a single work function gate electrode and method of fabrication |
| WO2007046150A1 (en) * | 2005-10-21 | 2007-04-26 | Fujitsu Limited | Fin type semiconductor device and method for manufacturing same |
| US8017463B2 (en) | 2006-12-29 | 2011-09-13 | Intel Corporation | Expitaxial fabrication of fins for FinFET devices |
| US7897994B2 (en) | 2007-06-18 | 2011-03-01 | Texas Instruments Incorporated | Method of making (100) NMOS and (110) PMOS sidewall surface on the same fin orientation for multiple gate MOSFET with DSB substrate |
| US20090001415A1 (en) * | 2007-06-30 | 2009-01-01 | Nick Lindert | Multi-gate transistor with strained body |
| US20090152589A1 (en) * | 2007-12-17 | 2009-06-18 | Titash Rakshit | Systems And Methods To Increase Uniaxial Compressive Stress In Tri-Gate Transistors |
| CN101853882B (en) | 2009-04-01 | 2016-03-23 | 台湾积体电路制造股份有限公司 | There is the high-mobility multiple-gate transistor of the switch current ratio of improvement |
| JP5355702B2 (en) * | 2009-09-16 | 2013-11-27 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
| US8310013B2 (en) * | 2010-02-11 | 2012-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a FinFET device |
| US8368146B2 (en) | 2010-06-15 | 2013-02-05 | International Business Machines Corporation | FinFET devices |
| KR101222488B1 (en) | 2010-06-29 | 2013-01-16 | 한국기계연구원 | Method and flexible face for inorganic el display |
| DE102010038742B4 (en) | 2010-07-30 | 2016-01-21 | Globalfoundries Dresden Module One Llc & Co. Kg | Method and semiconductor device based on a deformation technology in three-dimensional transistors based on a deformed channel semiconductor material |
| US8349692B2 (en) * | 2011-03-08 | 2013-01-08 | Globalfoundries Singapore Pte. Ltd. | Channel surface technique for fabrication of FinFET devices |
| US9761666B2 (en) * | 2011-06-16 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained channel field effect transistor |
| US9607987B2 (en) * | 2011-12-21 | 2017-03-28 | Intel Corporation | Methods for forming fins for metal oxide semiconductor device structures |
| US8729634B2 (en) | 2012-06-15 | 2014-05-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET with high mobility and strain channel |
| US8847281B2 (en) * | 2012-07-27 | 2014-09-30 | Intel Corporation | High mobility strained channels for fin-based transistors |
| US8501607B1 (en) * | 2012-11-07 | 2013-08-06 | Globalfoundries Inc. | FinFET alignment structures using a double trench flow |
| US20140264488A1 (en) * | 2013-03-15 | 2014-09-18 | Globalfoundries Inc. | Methods of forming low defect replacement fins for a finfet semiconductor device and the resulting devices |
| CN105493251A (en) * | 2013-09-27 | 2016-04-13 | 英特尔公司 | Non-planar semiconductor device with multi-layer flexible substrate |
| US9530777B2 (en) * | 2014-03-04 | 2016-12-27 | Stmicroelectronics, Inc. | FinFETs of different compositions formed on a same substrate |
| SG11201606392UA (en) * | 2014-03-27 | 2016-09-29 | Intel Corp | High mobility strained channels for fin-based nmos transistors |
-
2014
- 2014-03-27 SG SG11201606392UA patent/SG11201606392UA/en unknown
- 2014-03-27 KR KR1020217000231A patent/KR20210005324A/en not_active Ceased
- 2014-03-27 KR KR1020167023170A patent/KR102201112B1/en active Active
- 2014-03-27 US US15/117,590 patent/US10153372B2/en active Active
- 2014-03-27 WO PCT/US2014/032039 patent/WO2015147836A1/en active Application Filing
- 2014-03-27 EP EP14887192.4A patent/EP3123518A4/en active Pending
- 2014-03-27 CN CN201480076490.1A patent/CN106030818B/en active Active
-
2015
- 2015-02-09 TW TW104104231A patent/TWI637508B/en active
-
2018
- 2018-12-10 US US16/214,946 patent/US10854752B2/en active Active
-
2020
- 2020-08-20 US US16/998,382 patent/US20200381549A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| KR20210005324A (en) | 2021-01-13 |
| US10854752B2 (en) | 2020-12-01 |
| CN106030818A (en) | 2016-10-12 |
| US10153372B2 (en) | 2018-12-11 |
| KR20160136296A (en) | 2016-11-29 |
| US20190115466A1 (en) | 2019-04-18 |
| WO2015147836A1 (en) | 2015-10-01 |
| TW201543667A (en) | 2015-11-16 |
| KR102201112B1 (en) | 2021-01-12 |
| EP3123518A1 (en) | 2017-02-01 |
| US20160351701A1 (en) | 2016-12-01 |
| CN106030818B (en) | 2020-09-01 |
| EP3123518A4 (en) | 2017-11-22 |
| TWI637508B (en) | 2018-10-01 |
| US20200381549A1 (en) | 2020-12-03 |
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