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NO20010910D0 - FremgangsmÕte og apparat til mÕling av filmtykkelse - Google Patents

FremgangsmÕte og apparat til mÕling av filmtykkelse

Info

Publication number
NO20010910D0
NO20010910D0 NO20010910A NO20010910A NO20010910D0 NO 20010910 D0 NO20010910 D0 NO 20010910D0 NO 20010910 A NO20010910 A NO 20010910A NO 20010910 A NO20010910 A NO 20010910A NO 20010910 D0 NO20010910 D0 NO 20010910D0
Authority
NO
Norway
Prior art keywords
light
wavelength
intensity
values
repeated patterning
Prior art date
Application number
NO20010910A
Other languages
English (en)
Other versions
NO20010910L (no
Inventor
Ofer Du-Nour
Original Assignee
Tevet Process Control Technolo
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tevet Process Control Technolo filed Critical Tevet Process Control Technolo
Publication of NO20010910D0 publication Critical patent/NO20010910D0/no
Publication of NO20010910L publication Critical patent/NO20010910L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
NO20010910A 1998-08-27 2001-02-23 Fremgangsmåte og apparat til måling av filmtykkelsen, s¶rlig en fotoresistfilm på et halvledersubstrat NO20010910L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IL12596498A IL125964A (en) 1998-08-27 1998-08-27 Method and apparatus for measuring the thickness of a transparent film, particularly of a photoresist film on a semiconductor substrate
PCT/IL1999/000466 WO2000012958A1 (en) 1998-08-27 1999-08-26 Methods and apparatus for measuring the thickness of a film, particularly of a photoresist film on a semiconductor substrate

Publications (2)

Publication Number Publication Date
NO20010910D0 true NO20010910D0 (no) 2001-02-23
NO20010910L NO20010910L (no) 2001-04-27

Family

ID=11071900

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20010910A NO20010910L (no) 1998-08-27 2001-02-23 Fremgangsmåte og apparat til måling av filmtykkelsen, s¶rlig en fotoresistfilm på et halvledersubstrat

Country Status (13)

Country Link
US (1) US6801321B1 (no)
EP (1) EP1110054B1 (no)
JP (1) JP2002523763A (no)
KR (1) KR100694772B1 (no)
CN (1) CN1151358C (no)
AT (1) ATE280941T1 (no)
AU (1) AU5385599A (no)
CA (1) CA2341403A1 (no)
DE (1) DE69921493T2 (no)
HK (1) HK1039173A1 (no)
IL (1) IL125964A (no)
NO (1) NO20010910L (no)
WO (1) WO2000012958A1 (no)

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KR101311320B1 (ko) * 2008-10-01 2013-09-25 페터 볼터스 게엠베하 원반형 작업물의 두께를 계측하는 방법
US20100103422A1 (en) * 2008-10-27 2010-04-29 Applied Materials, Inc. Goodness of fit in spectrographic monitoring of a substrate during processing
US8352061B2 (en) 2008-11-14 2013-01-08 Applied Materials, Inc. Semi-quantitative thickness determination
JP5968783B2 (ja) 2009-11-03 2016-08-10 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ スペクトルの等高線図のピーク位置と時間の関係を使用する終点方法
US8954186B2 (en) 2010-07-30 2015-02-10 Applied Materials, Inc. Selecting reference libraries for monitoring of multiple zones on a substrate
JP5681453B2 (ja) * 2010-11-08 2015-03-11 株式会社ディスコ 測定方法および測定装置
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US9157730B2 (en) * 2012-10-26 2015-10-13 Applied Materials, Inc. PECVD process
TWI499756B (zh) * 2013-05-10 2015-09-11 Ind Tech Res Inst 接合層的厚度量測系統與方法
GB201319559D0 (en) * 2013-11-06 2013-12-18 Pilkington Group Ltd In-process monitoring of coatings on glass articles
US20150253127A1 (en) * 2014-03-04 2015-09-10 Honeywell Asca Inc. Thickness Determination of Web Product by Mid-infrared Wavelength Scanning Interferometry
FR3026484B1 (fr) * 2014-09-29 2018-06-15 Altatech Semiconductor Procede et systeme d'inspection de plaquettes transparentes pour l'electronique, l'optique ou l'optoelectronique
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CN105784618B (zh) * 2016-04-27 2019-01-01 上海理工大学 一种非透射固体表面上溶液液膜参数测量装置及方法
CN106441125B (zh) * 2016-11-01 2019-03-19 淮阴师范学院 一种薄膜厚度测量方法及系统
JP6333351B1 (ja) * 2016-12-27 2018-05-30 Ntn株式会社 測定装置、塗布装置、および膜厚測定方法
CN108571933A (zh) * 2017-03-07 2018-09-25 台濠科技股份有限公司 运用近红外线量测晶圆厚度的方法
TW201923332A (zh) 2017-10-10 2019-06-16 荷蘭商Ａｓｍｌ荷蘭公司 度量衡方法和設備、電腦程式及微影系統
CN111279147A (zh) * 2017-11-01 2020-06-12 柯尼卡美能达株式会社 膜厚测定方法、膜厚测定系统、光反射膜的制造方法及光反射膜的制造系统
KR102369936B1 (ko) * 2017-12-08 2022-03-03 삼성전자주식회사 광학 측정 방법
US12265327B2 (en) * 2018-07-30 2025-04-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor manufacturing apparatus and method thereof
CN112747681A (zh) * 2019-10-31 2021-05-04 佳陞科技有限公司 一种非破坏性光学检测系统
CN110986801A (zh) * 2019-11-15 2020-04-10 富泰华精密电子（郑州）有限公司 检测装置、检测设备及检测方法
CN111238384A (zh) * 2020-02-27 2020-06-05 无锡市振华开祥科技有限公司 一种薄不锈钢零件镀层定性测厚方法
CN112729133B (zh) * 2020-12-18 2023-02-24 广东省大湾区集成电路与系统应用研究院 一种基于探测光栅衍射强度测量薄膜厚度的方法及装置
JP7616898B2 (ja) 2021-02-17 2025-01-17 東京エレクトロン株式会社 膜厚測定装置、成膜システム及び膜厚測定方法
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Also Published As

Publication number Publication date
WO2000012958A1 (en) 2000-03-09
EP1110054B1 (en) 2004-10-27
HK1039173A1 (zh) 2002-04-12
KR20010072848A (ko) 2001-07-31
CN1314991A (zh) 2001-09-26
KR100694772B1 (ko) 2007-03-13
DE69921493T2 (de) 2006-02-02
CA2341403A1 (en) 2000-03-09
NO20010910L (no) 2001-04-27
EP1110054A4 (en) 2001-10-31
IL125964A0 (en) 1999-04-11
JP2002523763A (ja) 2002-07-30
EP1110054A1 (en) 2001-06-27
ATE280941T1 (de) 2004-11-15
DE69921493D1 (de) 2004-12-02
CN1151358C (zh) 2004-05-26
IL125964A (en) 2003-10-31
US6801321B1 (en) 2004-10-05
AU5385599A (en) 2000-03-21

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