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KR960026953A - 반도체장치의 게이트전극 및 그 형성방법 - Google Patents

반도체장치의 게이트전극 및 그 형성방법 Download PDF

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Publication number
KR960026953A
KR960026953A KR1019940038281A KR19940038281A KR960026953A KR 960026953 A KR960026953 A KR 960026953A KR 1019940038281 A KR1019940038281 A KR 1019940038281A KR 19940038281 A KR19940038281 A KR 19940038281A KR 960026953 A KR960026953 A KR 960026953A
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South Korea
Prior art keywords
forming
metal layer
gate electrode
polycrystalline silicon
barrier metal
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KR1019940038281A
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English (en)
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KR0161380B1 (ko
Inventor
김영선
이내인
고대홍
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김광호
삼성전자 주식회사
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Priority to KR1019940038281A priority Critical patent/KR0161380B1/ko
Priority to JP7339693A priority patent/JPH08236769A/ja
Publication of KR960026953A publication Critical patent/KR960026953A/ko
Priority to US08/953,644 priority patent/US5852319A/en
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Publication of KR0161380B1 publication Critical patent/KR0161380B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/90—MOSFET type gate sidewall insulating spacer

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

3층구조의 게이트전극 및 그 형성방법에 관하여 기쟈되고 있다.
이는 반도체기판 상에 형성된 게이트산화막, 상기 게이트산화막 상에 형성된 다결정실리콘막, 상기 다결정실리콘막 상에 형성된 장벽급속층, 및 상기 장벽금속층 상에 형성된 저저항금속층을 포함하는 것을 특징으로 한다. 따라서 게이트전극의 전기적 특성 및 신뢰도를 향상시킬 수 있다.

Description

반도체장치의 게이트전극 및 그 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 일 방법에 의해 형성된 게이트전극을 도시한 단면도, 제3A도 내지 3D도는 본 발명의 제1실시예에 의한 게이트전극 형성방법을 설명하기 위해 도시한 단면도들이다. 제4A도 내지 4D도는 본 발명의 제2실시예에 의한 게이트전극 형성방법을 설명하기 위해 거시한 단면도들이다.

Claims (9)

  1. 반도체기판 상에 형성된 게이트산화막; 상기 게이트산화막 상에 형성된 다결정실리콘막; 상기 다결정실리콘막 상에 형성된 장벽금속층; 및 상기 장벽급속층 상에 형성된 저저항금속층을 포함하는 것을 특징으로 하는 반도체장치의 게이트전극.
  2. 제1항에 있어서, 상기 장벽금속층은 WSi2,TaSi2및 MoSi2등의 고융점 실리사이드와 WN, TiN, TaN,MoN등의 고융점 나이트라인으로 이루어진 군에서 선택된 하나로 형성되어 있는 것을 특징으로 하는 반도체장치의 게이트전극.
  3. 제1항에 있어서, 상기 장벽금속층은 TiTs2, TaSi2, CoSi2및 MoSi2등의로 이루어진 군에서 선택된 하나로 형성되어 있는 것을 특징으로 하는 반도체장치의 게이트전극.
  4. 반도체기판 상에 게이트산화막을 형성하는 제1공정; 상기 게이트산화막 상에 제1다결정실리콘막을 형성하는 제2공정; 상기 제1다결정실리콘막 상에 장벽금속층을 형성하는 제3공정; 상기 장벽금속층 상에 제2다결정실리콘막을 형성하는 제4공정; 상기 제3다결정실리콘막층 상에 실리사이드화 물질을 형성하는 제5공정; 결과물을 열처리하여 상기 실리사이드화 물질과 제2다결정실리콘막을 반응시킴으로서 저저항금속층을 형성하는 제6공정; 및 후속 열처리하는 제7공정을 포함하는 것을 특징으로 하는 반도체장치의 게이트전극 형성방법.
  5. 제4항에 있어서, 상기 장벽금속층은 상기 저저항금속층을 구성하는 입자가 제1다결정실리톰막으로 확산되지 않도록하는 물질을 사용하여 형성되는 것을 특징으로 하는 반도체장치의 게이트전극 형성방법.
  6. 제5항에 있어서, 상기 물질은 Wsix,TaSi2및 MoSi2등의 고융점 실리사리드와, WN, TiN, TaN,MoN등의 고융점 나이트라인으로 이루어진 군에서 선택된 하나로 형성되어 있는 것을 특징으로 하는 반도체장치의 게이트전극 형성방법.
  7. 제6항에 있어서, 상기 WSix는 WF6을 SiH나 SiHCI2등과 반응시켜 형성하는것을 특징으로 하는 반도체장치의 게이트전극 형성방법.
  8. 제4항에 있어서, 상기 실리사이드화 물질은 TI, Co, Ta 및 Mo등으로 이루어진 군에서 선택된 하나인 것을 특징으로 하는 반도체장치의 게이트전극 형성방법.
  9. 제4항에 있어서, 상기 제4공정 이후에, 적층된 물질들을 패터닝하여 게이트전극의패턴을 형성하는 공정 및 상기 패턴 측벽에 절연물질로 된 측벽스페이서를 형성하는 공정을 더 포함하는 는 것을 특징으로 하는 반도체장치의 게이트전극 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940038281A 1994-12-28 1994-12-28 반도체장치의 트랜지스터 및 그 제조방법 KR0161380B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019940038281A KR0161380B1 (ko) 1994-12-28 1994-12-28 반도체장치의 트랜지스터 및 그 제조방법
JP7339693A JPH08236769A (ja) 1994-12-28 1995-12-26 半導体素子のゲ−ト電極及びその製造方法
US08/953,644 US5852319A (en) 1994-12-28 1997-10-17 Gate electrode for semiconductor device

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Application Number Priority Date Filing Date Title
KR1019940038281A KR0161380B1 (ko) 1994-12-28 1994-12-28 반도체장치의 트랜지스터 및 그 제조방법

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KR960026953A true KR960026953A (ko) 1996-07-22
KR0161380B1 KR0161380B1 (ko) 1998-12-01

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
KR100443352B1 (ko) * 1996-12-30 2004-10-14 주식회사 하이닉스반도체 반도체장치의실리사이드막형성방법

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KR100234378B1 (ko) * 1997-05-20 1999-12-15 윤종용 실리사이드를 이용한 스위칭 소자 및 그 제조방법
US5854115A (en) * 1997-11-26 1998-12-29 Advanced Micro Devices, Inc. Formation of an etch stop layer within a transistor gate conductor to provide for reduction of channel length
JPH11220112A (ja) * 1998-01-30 1999-08-10 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6291868B1 (en) 1998-02-26 2001-09-18 Micron Technology, Inc. Forming a conductive structure in a semiconductor device
US5998847A (en) * 1998-08-11 1999-12-07 International Business Machines Corporation Low voltage active body semiconductor device
US7282443B2 (en) * 2003-06-26 2007-10-16 Micron Technology, Inc. Methods of forming metal silicide
US7348265B2 (en) * 2004-03-01 2008-03-25 Texas Instruments Incorporated Semiconductor device having a silicided gate electrode and method of manufacture therefor
KR100553714B1 (ko) * 2004-07-14 2006-02-24 삼성전자주식회사 자기정렬 실리사이드층을 가지는 반도체 소자 및 그제조방법

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DE3230077A1 (de) * 1982-08-12 1984-02-16 Siemens AG, 1000 Berlin und 8000 München Integrierte bipolar- und mos-transistoren enthaltende halbleiterschaltung auf einem chip und verfahren zu ihrer herstellung
JPS61166075A (ja) * 1985-01-17 1986-07-26 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPS63284857A (ja) * 1987-05-18 1988-11-22 Toshiba Corp 半導体装置及びその製造方法
JP2753301B2 (ja) * 1989-01-20 1998-05-20 株式会社日立製作所 半導体集積回路装置
JP2695014B2 (ja) * 1989-09-06 1997-12-24 株式会社東芝 Ｍｏｓ型半導体装置
US5341016A (en) * 1993-06-16 1994-08-23 Micron Semiconductor, Inc. Low resistance device element and interconnection structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100443352B1 (ko) * 1996-12-30 2004-10-14 주식회사 하이닉스반도체 반도체장치의실리사이드막형성방법

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KR0161380B1 (ko) 1998-12-01
US5852319A (en) 1998-12-22
JPH08236769A (ja) 1996-09-13

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