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KR920018511A - 액정전기 광학장치 - Google Patents

액정전기 광학장치 Download PDF

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Publication number
KR920018511A
KR920018511A KR1019920004132A KR920004132A KR920018511A KR 920018511 A KR920018511 A KR 920018511A KR 1019920004132 A KR1019920004132 A KR 1019920004132A KR 920004132 A KR920004132 A KR 920004132A KR 920018511 A KR920018511 A KR 920018511A
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KR
South Korea
Prior art keywords
thin film
channel
film transistors
liquid crystal
optical device
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KR1019920004132A
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English (en)
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KR0133845B1 (ko
Inventor
아키라 마세
마사아키 히로키
Original Assignee
야마자끼 순페이
가부시키가이샤 한도오따이 에네루기 겐큐쇼
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Publication of KR920018511A publication Critical patent/KR920018511A/ko
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Publication of KR0133845B1 publication Critical patent/KR0133845B1/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G02F1/136245—Active matrix addressed cells having more than one switching element per pixel having complementary transistors

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

내용 없음

Description

액정전기 광학장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 구성을 2×2 매트릭스로 편성한 경우의 설명도,
제2도는 본 발명을 사용하지 않는 종래의 예시도,
제3도는 본 발명 실시예의 일례도.

Claims (9)

  1. 기판상에 매트릭스 구성을 갖는 복수의 화소가 설치된 액정전기 광학장치로, 각각의 화소전극에 P채널형 박막트랜지스터와 N채널형 박막트랜지스터와를 상보형으로 구성한 상보형 박막트랜지스터를 복수로 설치하고, 그 복수의 상보형 박막트랜지스터의 입출력단을 직렬로 접속하고, 이 입출력단의 한쪽을 상기 화소전극으로, 다른 한쪽을 제1신호선에 접속하고, 동시에 상기 복수의 상보형 박막 트랜지스터의 모든 게이트전극을 제2신호선에 접속한 것을 특징으로 하는 액정전기 광학전기.
  2. 기판상에 매트릭스 구성을 갖는 복수의 화소가 설치된 액정전기 광학장치로, 각각의 화소전극에 복수의 P채널형 박막트랜지스터와 복수의 N채널형 박막트랜지스터를 갖고, 상기 복수의 P채널형 박막트랜지스터의 입출력단을 직렬로 접속하고, 이 입출력단의 한쪽을 상기 화소전극에, 다른 한쪽을 제1신호선에 접속하고, 상기 복수의 N채널형 박막트랜지스터의 입출력단을 직렬로 접속하고, 이 입출력단의 한쪽을 상기 화소전극에, 다른 한쪽을 같은 제1신호선에 접속하고, 상기 박막트랜지스터의 모든 게이트 전극을 동일한 제2신호선에 접속한 것을 특징으로 하는 액정전기 광학장치.
  3. 제1항에 있어서 복수의 상보형 박막트랜지스터 가운데 적어도 1조는 나머지 상보형 박막트랜지스터가 동작불량시 보상하는 기능을 갖는 점을 특징으로 하는 액정정기 광학장치.
  4. 제2항에 있어서, 복수의 P채널형 박막트랜지스터 가운데 적어도 일부는 나머지 박막트랜지스터가 동작불량시 보상하는 기능을 갖는 점을 특징으로 하는 액정전기 광학장치.
  5. 제2항에 있어서, 복수의 N채널형 박막트랜지스터 가운데 적어도 일부는 나머지 박막트랜지스터가 동작불량시 보상하는 기능을 갖는 점을 특징으로 하는 액정전기 광학장치.
  6. 한쌍의 기판과, 상기 한쌍의 기판들 사이에 구비된 전기광학적 영향이 미치는 수단과, 상기 기판들 중 한 내부표면상에 다수의 화소전극들이 형성되어 상기 화소전극에 전압을 인가하기 위한 스윗칭수단으로 구비되는 각각의 상기 화소전극과, 다른 기판상에 형성된 역전극과, 상기 화소전극들이 형성된 기판상에 제공된 다수의 신호선 및 다수의 데이터선으로 이루어져 상기 스윗칭수단이 직렬로 상응화소전극 및 데이터선과 접속된 두 개의 상보형 P채널 및 N채널 트랜지스터로 이루어짐을 특징으로 하는 액정전기 광학장치.
  7. 제6항에 있어서, 상기 전기광학적 영향이 미치는 수단이 액정층임을 특징으로 하는 액정전기 광학장치.
  8. 제6항에 있어서, 상기 두 개의 상보형 P채널 및 N채널 트랜지스터 쌍들의 모든 게이트 전극들이 상기 신호선중 상응하는 하나와 접속됨을 특징으로 하는 액정전기 광학장치.
  9. 제6항에 있어서, 상기 스윗칭수단이 직렬로 상기 두 개의 P채널 및 N채널 트랜지스터 쌍과 접속된 다른 상보형 P채널 및 N채널 트랜지스터 쌍으로 이루어짐을 특징으로 하는 액정전기 광학장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920004132A 1991-03-15 1992-03-13 반도체장치와 그를 사용한 전기광학장치 KR0133845B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7678591A JP2873632B2 (ja) 1991-03-15 1991-03-15 半導体装置
JP91-76785 1991-03-15

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KR920018511A true KR920018511A (ko) 1992-10-22
KR0133845B1 KR0133845B1 (ko) 1998-04-22

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100522960B1 (ko) * 1990-11-26 2005-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 제작방법

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3556679B2 (ja) * 1992-05-29 2004-08-18 株式会社半導体エネルギー研究所 電気光学装置
JP2873632B2 (ja) 1991-03-15 1999-03-24 株式会社半導体エネルギー研究所 半導体装置
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
CN1146056C (zh) 1994-06-02 2004-04-14 株式会社半导体能源研究所 有源矩阵显示器
US5854616A (en) * 1994-06-24 1998-12-29 Hitach, Ltd. Active matrix type liquid crystal display system and driving method therefor
US6198464B1 (en) 1995-01-13 2001-03-06 Hitachi, Ltd. Active matrix type liquid crystal display system and driving method therefor
TW345654B (en) * 1995-02-15 1998-11-21 Handotai Energy Kenkyusho Kk Active matrix display device
TW344901B (en) * 1995-02-15 1998-11-11 Handotai Energy Kenkyusho Kk Active matrix display device
KR100270147B1 (ko) * 1996-03-01 2000-10-16 니시무로 타이죠 액정표시장치
JP4014676B2 (ja) * 1996-08-13 2007-11-28 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
JP3788649B2 (ja) * 1996-11-22 2006-06-21 株式会社半導体エネルギー研究所 液晶表示装置
JP3795606B2 (ja) * 1996-12-30 2006-07-12 株式会社半導体エネルギー研究所 回路およびそれを用いた液晶表示装置
US6088070A (en) * 1997-01-17 2000-07-11 Semiconductor Energy Laboratory Co., Ltd. Active matrix liquid crystal with capacitor between light blocking film and pixel connecting electrode
CN1506929B (zh) * 1997-02-17 2010-09-01 精工爱普生株式会社 显示装置
US6462722B1 (en) 1997-02-17 2002-10-08 Seiko Epson Corporation Current-driven light-emitting display apparatus and method of producing the same
JP3308880B2 (ja) * 1997-11-07 2002-07-29 キヤノン株式会社 液晶表示装置と投写型液晶表示装置
JPH11195487A (ja) * 1997-12-27 1999-07-21 Tdk Corp 有機ｅｌ素子
US6506635B1 (en) * 1999-02-12 2003-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method of forming the same
US6346730B1 (en) * 1999-04-06 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device having a pixel TFT formed in a display region and a drive circuit formed in the periphery of the display region on the same substrate
US8853696B1 (en) * 1999-06-04 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
JP2001077108A (ja) * 1999-08-31 2001-03-23 Nec Corp 半導体装置及び複合酸化物薄膜の製造方法
TW591584B (en) 1999-10-21 2004-06-11 Semiconductor Energy Lab Active matrix type display device
US6580094B1 (en) * 1999-10-29 2003-06-17 Semiconductor Energy Laboratory Co., Ltd. Electro luminescence display device
TW587239B (en) * 1999-11-30 2004-05-11 Semiconductor Energy Lab Electric device
US6825488B2 (en) 2000-01-26 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TW521226B (en) * 2000-03-27 2003-02-21 Semiconductor Energy Lab Electro-optical device
JP4014831B2 (ja) * 2000-09-04 2007-11-28 株式会社半導体エネルギー研究所 Ｅｌ表示装置及びその駆動方法
JP2002358031A (ja) 2001-06-01 2002-12-13 Semiconductor Energy Lab Co Ltd 発光装置及びその駆動方法
JP4149168B2 (ja) 2001-11-09 2008-09-10 株式会社半導体エネルギー研究所 発光装置
KR100444030B1 (ko) * 2002-07-16 2004-08-12 엘지.필립스 엘시디 주식회사 유기전계 발광소자
US6803275B1 (en) 2002-12-03 2004-10-12 Fasl, Llc ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices
US7033957B1 (en) 2003-02-05 2006-04-25 Fasl, Llc ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devices
JP4574127B2 (ja) 2003-03-26 2010-11-04 株式会社半導体エネルギー研究所 素子基板及び発光装置
US7199397B2 (en) * 2004-05-05 2007-04-03 Au Optronics Corporation AMOLED circuit layout
TWI293713B (en) * 2004-07-02 2008-02-21 Au Optronics Corp Display panel and fabrication method thereof
US7382421B2 (en) * 2004-10-12 2008-06-03 Hewlett-Packard Development Company, L.P. Thin film transistor with a passivation layer
KR101219038B1 (ko) 2004-10-26 2013-01-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
WO2006054568A1 (ja) * 2004-11-19 2006-05-26 Matsushita Electric Industrial Co., Ltd. 有機半導体回路及びその駆動方法
KR101404582B1 (ko) * 2006-01-20 2014-06-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치의 구동방법
CN100502606C (zh) * 2006-01-23 2009-06-17 友达光电股份有限公司 像素结构、有机电致发光显示单元及其修补方法
TWI459103B (zh) * 2009-02-02 2014-11-01 Au Optronics Corp 畫素結構及其製造方法
CN106990574B (zh) * 2017-06-02 2021-02-02 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置及其驱动方法

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5124341B2 (ko) * 1971-12-24 1976-07-23
US4065781A (en) * 1974-06-21 1977-12-27 Westinghouse Electric Corporation Insulated-gate thin film transistor with low leakage current
US4042854A (en) 1975-11-21 1977-08-16 Westinghouse Electric Corporation Flat panel display device with integral thin film transistor control system
US4006383A (en) 1975-11-28 1977-02-01 Westinghouse Electric Corporation Electroluminescent display panel with enlarged active display areas
US4045302A (en) * 1976-07-08 1977-08-30 Burroughs Corporation Multilevel metallization process
JPS5327483A (en) 1976-08-27 1978-03-14 Hitachi Ltd Evalution of material structure
JPS53144297A (en) * 1977-05-20 1978-12-15 Matsushita Electric Ind Co Ltd Display device
JPS5529154A (en) * 1978-08-23 1980-03-01 Shunpei Yamazaki Semiconductor device
US4466172A (en) * 1979-01-08 1984-08-21 American Microsystems, Inc. Method for fabricating MOS device with self-aligned contacts
GB2081018B (en) * 1980-07-31 1985-06-26 Suwa Seikosha Kk Active matrix assembly for display device
US4409724A (en) 1980-11-03 1983-10-18 Texas Instruments Incorporated Method of fabricating display with semiconductor circuits on monolithic structure and flat panel display produced thereby
DE3272410D1 (en) 1981-02-16 1986-09-11 Fujitsu Ltd Method of producing mosfet type semiconductor device
JPS584180A (ja) 1981-06-30 1983-01-11 セイコーエプソン株式会社 アクテイブマトリクス基板
JPS587163A (ja) 1981-07-03 1983-01-14 Matsushita Graphic Commun Syst Inc 静電現像装置
JPS5823479A (ja) * 1981-08-05 1983-02-12 Fujitsu Ltd 半導体装置の製造方法
JPS58100461A (ja) * 1981-12-10 1983-06-15 Japan Electronic Ind Dev Assoc<Jeida> 薄膜トランジスタの製造方法
JPS58115864A (ja) * 1981-12-28 1983-07-09 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
FR2524714B1 (fr) * 1982-04-01 1986-05-02 Suwa Seikosha Kk Transistor a couche mince
US4770498A (en) * 1982-07-12 1988-09-13 Hosiden Electronics Co., Ltd. Dot-matrix liquid crystal display
WO1984003992A1 (fr) 1983-03-31 1984-10-11 Matsushita Electric Ind Co Ltd Dispositif integre a film mince
JPS6066288A (ja) 1983-09-21 1985-04-16 セイコーエプソン株式会社 液晶表示装置
JPS60213062A (ja) * 1984-04-09 1985-10-25 Hosiden Electronics Co Ltd 薄膜トランジスタの製造方法
US4727044A (en) 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
JPS6137284A (ja) * 1984-07-31 1986-02-22 ジューキ株式会社 ミシンの縫製パタ−ン作成装置
JPH0693166B2 (ja) * 1984-09-05 1994-11-16 株式会社日立製作所 液晶素子
JPS6211829A (ja) * 1985-03-28 1987-01-20 Toshiba Corp アクテイブマトリツクス形液晶表示装置
JPS6245182A (ja) * 1985-08-23 1987-02-27 Hitachi Vlsi Eng Corp 半導体記憶装置
DE3682021D1 (de) 1985-10-23 1991-11-21 Hitachi Ltd Polysilizium-mos-transistor und verfahren zu seiner herstellung.
JPH0799774B2 (ja) 1986-11-06 1995-10-25 松下電器産業株式会社 半導体装置の製造方法
JPS63151083A (ja) * 1986-12-16 1988-06-23 Hitachi Ltd 薄膜半導体装置
JPS63261875A (ja) * 1987-04-20 1988-10-28 Seiko Epson Corp 固体撮像装置
JPS63289534A (ja) * 1987-05-22 1988-11-28 Seiko Epson Corp アクテイブマトリクスパネル
GB2206721A (en) * 1987-07-03 1989-01-11 Philips Electronic Associated Active matrix display device
JPS6430133A (en) * 1987-07-24 1989-02-01 New Japan Radio Co Ltd Manufacture of embeded heater for miniature cathode
JPH07114184B2 (ja) 1987-07-27 1995-12-06 日本電信電話株式会社 薄膜形シリコン半導体装置およびその製造方法
JPS6450028A (en) * 1987-08-21 1989-02-27 Nec Corp Thin film transistor substrate
JP2786628B2 (ja) * 1987-10-15 1998-08-13 シャープ株式会社 液晶パネルの電極構造
US5075674A (en) * 1987-11-19 1991-12-24 Sharp Kabushiki Kaisha Active matrix substrate for liquid crystal display
JPH01165172A (ja) * 1987-12-22 1989-06-29 Ricoh Co Ltd 薄膜トランジスターの製造方法
JP2653099B2 (ja) * 1988-05-17 1997-09-10 セイコーエプソン株式会社 アクティブマトリクスパネル，投写型表示装置及びビューファインダー
JP2657071B2 (ja) 1988-07-18 1997-09-24 三洋電機株式会社 多結晶シリコン薄膜及びその形成方法
JPH0816756B2 (ja) * 1988-08-10 1996-02-21 シャープ株式会社 透過型アクティブマトリクス液晶表示装置
JPH0285826A (ja) * 1988-09-22 1990-03-27 Hitachi Ltd 表示パネル
JPH0290683A (ja) * 1988-09-28 1990-03-30 Seiko Epson Corp 薄膜トランジスタ及びその製造方法
EP0376648B1 (en) * 1988-12-26 1994-05-25 Sharp Kabushiki Kaisha A liquid crystal display apparatus
US5159476A (en) * 1988-12-28 1992-10-27 Sony Corporation Liquid crystal display unit having large image area and high resolution
JPH02273934A (ja) * 1989-04-17 1990-11-08 Oki Electric Ind Co Ltd 半導体素子およびその製造方法
EP0412701B1 (en) * 1989-07-31 1996-09-25 Canon Kabushiki Kaisha Thin film transistor and preparation thereof
GB2235326A (en) * 1989-08-16 1991-02-27 Philips Electronic Associated Active matrix liquid crystal colour display devices
US5153690A (en) * 1989-10-18 1992-10-06 Hitachi, Ltd. Thin-film device
JPH03163529A (ja) * 1989-11-22 1991-07-15 Sharp Corp アクティブマトリクス表示装置
JPH02230130A (ja) * 1989-12-15 1990-09-12 Semiconductor Energy Lab Co Ltd 液晶電気光学装置
US5056895A (en) * 1990-05-21 1991-10-15 Greyhawk Systems, Inc. Active matrix liquid crystal liquid crystal light valve including a dielectric mirror upon a leveling layer and having fringing fields
US5126283A (en) * 1990-05-21 1992-06-30 Motorola, Inc. Process for the selective encapsulation of an electrically conductive structure in a semiconductor device
JP3226223B2 (ja) * 1990-07-12 2001-11-05 株式会社東芝 薄膜トランジスタアレイ装置および液晶表示装置
JPH0817235B2 (ja) * 1990-08-29 1996-02-21 株式会社東芝 オフセットゲート構造トランジスタおよびその製造方法
JP3060656B2 (ja) 1990-11-26 2000-07-10 セイコーエプソン株式会社 液晶表示素子
EP0488801B1 (en) * 1990-11-30 1998-02-04 Sharp Kabushiki Kaisha Thin-film semiconductor device
KR960010723B1 (ko) * 1990-12-20 1996-08-07 가부시끼가이샤 한도오따이 에네루기 겐큐쇼 전기광학장치
JP2717233B2 (ja) 1991-03-06 1998-02-18 株式会社 半導体エネルギー研究所 絶縁ゲイト型電界効果半導体装置およびその作製方法
KR960001611B1 (ko) * 1991-03-06 1996-02-02 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법
JP2873632B2 (ja) 1991-03-15 1999-03-24 株式会社半導体エネルギー研究所 半導体装置
US5240868A (en) * 1991-04-30 1993-08-31 Samsung Electronics Co., Ltd. Method of fabrication metal-electrode in semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100522960B1 (ko) * 1990-11-26 2005-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 제작방법

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JPH0627484A (ja) 1994-02-04
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JP2873632B2 (ja) 1999-03-24
US5642213A (en) 1997-06-24

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