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KR870009457A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR870009457A
KR870009457A KR870002018A KR870002018A KR870009457A KR 870009457 A KR870009457 A KR 870009457A KR 870002018 A KR870002018 A KR 870002018A KR 870002018 A KR870002018 A KR 870002018A KR 870009457 A KR870009457 A KR 870009457A
Authority
KR
South Korea
Prior art keywords
molybdenum
tantalum
thin film
film
tantalum alloy
Prior art date
Application number
KR870002018A
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English (en)
Other versions
KR910001872B1 (ko
Inventor
마사유키 도오죠
야스히사 오아나
Original Assignee
와타리 스기이치로
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61048910A external-priority patent/JPS62205656A/ja
Priority claimed from JP61141694A external-priority patent/JPS62297892A/ja
Priority claimed from JP20906686A external-priority patent/JPH07105486B2/ja
Application filed by 와타리 스기이치로, 가부시키가이샤 도시바 filed Critical 와타리 스기이치로
Publication of KR870009457A publication Critical patent/KR870009457A/ko
Application granted granted Critical
Publication of KR910001872B1 publication Critical patent/KR910001872B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 따른 액티브매트릭스형 액정표시장치의 등가회로도.
제2도는 제1도에 따른 액티브매트릭스기판의 요부를 확대하여 나타낸 확대평면도.
제3도는 하층금속막이 사용되지 않은 액티브매트릭스기판을 나타내기 위한 제2도의 A―A′선에 따른 단면도.

Claims (12)

  1. 30―84원자%의 탄탈합성비를 갖는 몰리브덴―탄탈합금을 사용하는 반도체장치.
  2. 제1항에 있어서, 몰리브덴―탄탈합금은 몰리브덴과 탄탈의 총량이 95% 이상인 것을 특징으로 하는 반도체장치.
  3. 제1항에 있어서, 몰리브덴―탄탈합금을 적어도 1층 이상으로 갖는 다층배선이 갖추어진 것을 특징으로 하는 반도체 장치.
  4. 절연기판과, 그 절연기판상에서 상호 교차되게 설치되어 30―84원자%의 탄탈합성비를 갖는 몰리브덴―탄탈합금으로 형성된 다수의 어드레스라인과 데이터라인,
    어드레스라인과 데이터라인의 교차점에 각각 형성되어 그 어드레스라인과 접촉되는 게이트전극과 그 데이터라인에 접촉되는 소오스전극을 갖는 다수의 박막트랜지스터 및,
    박막트랜지스터의 드레인전극에 접촉되는 다수의 표시전극이 구비되어 구성된 것을 특징으로 하는 표시장치용 구동회로기판.
  5. 제4항에 있어서, 몰리브덴―탄탈합금은 몰리브덴―탄탈의 총량이 95원자% 이상 포함된 것을 특징으로 하는 표시장치용 구동회로기판.
  6. 제4항에 있어서, 몰리브덴―탄탈합금층을 적어도 1개 이상 포함하고 있는 것을 특징으로 하는 표시장치용 구동회로기판.
  7. 제4항에 있어서, 박막트랜지스터는 어드레스라인과 일체로 형성된 게이트전극을 갖게 되고, 반도체박막은 양극산화막 또는 게이트절연막을 포함하는 게이트절연막을 통해 그 게이트전극상에 형성되며, 드레인과 소오스전극은 반도체박막상에서 그 데이터라인과 동일한 도전재료로 형성되는 것을 특징으로 하는 표시장치용 구동회로기판.
  8. 제4항에 있어서, 어드레스라인의 양극산화막 또는 열산화막을 포함하는 층간절연층과, 박막트랜지스터의 반도체박막과 동시에 형성되는 반도체박막은 각각의 어드레스라인과 데이터라인 사이에 형성되는 것을 특징으로 하는 표시장치용 구동회로기판.
  9. 30―80원자%의 탄탈합성비를 갖는 몰리브덴―탄탈합금으로 이루어진 것을 특징으로 하는 전극배선재료.
  10. 제9항에 있어서, 몰리브덴―탄탈합금은 몰리브덴과 탄탈의 총량이 95% 이상 함유하고 있는 것을 특징으로 하는 전극배선재료.
  11. 체심입방구조의 결정형을 갖는 하층금속막과 8원자% 이상의 탄탈합성비를 갖는 상층 몰리브덴―탄탈합금막을 갖는 다층구조로 구성된 것을 특징으로 하는 전극배선재료.
  12. 제11항에 있어서, 상층금속막은 84원자% 이하의 탄탈합성비를 갖는 몰리브덴―탄탈합성막인 것을 특징으로 하는 전극배선재료.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870002018A 1986-03-06 1987-03-06 반도체장치 KR910001872B1 (ko)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP61-48910 1986-03-06
JP61048910A JPS62205656A (ja) 1986-03-06 1986-03-06 半導体装置
JP61-141694 1986-06-18
JP61141694A JPS62297892A (ja) 1986-06-18 1986-06-18 表示装置用駆動回路基板
JP141694 1986-06-18
JP48910 1986-09-05
JP61-209066 1986-09-05
JP20906686A JPH07105486B2 (ja) 1986-09-05 1986-09-05 電極配線材料

Publications (2)

Publication Number Publication Date
KR870009457A true KR870009457A (ko) 1987-10-26
KR910001872B1 KR910001872B1 (ko) 1991-03-28

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KR1019870002018A KR910001872B1 (ko) 1986-03-06 1987-03-06 반도체장치

Country Status (4)

Country Link
US (2) US4975760A (ko)
EP (1) EP0236629B1 (ko)
KR (1) KR910001872B1 (ko)
DE (1) DE3689843T2 (ko)

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JPS61206243A (ja) * 1985-03-08 1986-09-12 Mitsubishi Electric Corp 高融点金属電極・配線膜を用いた半導体装置
US4904056A (en) * 1985-07-19 1990-02-27 General Electric Company Light blocking and cell spacing for liquid crystal matrix displays
FR2605442B1 (fr) * 1986-10-17 1988-12-09 Thomson Csf Ecran de visualisation electrooptique a transistors de commande et procede de realisation
JPS63263743A (ja) * 1987-04-22 1988-10-31 Alps Electric Co Ltd 薄膜トランジスタアレイおよびその製法

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DE3689843D1 (de) 1994-06-23
EP0236629A2 (en) 1987-09-16
US5028551A (en) 1991-07-02
KR910001872B1 (ko) 1991-03-28
DE3689843T2 (de) 1994-09-01
US4975760A (en) 1990-12-04
EP0236629B1 (en) 1994-05-18
EP0236629A3 (en) 1989-12-27

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