KR20080054574A - Manufacturing Method Of Liquid Crystal Display - Google Patents

Abstract

A method of manufacturing a liquid crystal display of the present invention includes forming a pixel electrode on an auxiliary substrate made of glass, forming a passivation layer on the auxiliary substrate and the pixel electrode, and forming a data line and a drain electrode including a source electrode on the passivation layer. Forming a resistive contact member on the source electrode and the drain electrode facing each other, forming a semiconductor on the resistive contact member and the passivation film exposed between the source electrode and the drain electrode, and forming an insulating film on the semiconductor, the data line and the drain electrode. Forming a gate line including a gate electrode on the insulating film, forming a first barrier film on the gate line and the insulating film, applying a synthetic resin on the first barrier film to form a flexible substrate, and Forming a second barrier film on the substrate, wherein the second barrier film is formed on the second barrier film. Forming a film, and removing the auxiliary substrate, the configuration and the first and the second barrier film is a nitride film or an oxide film, a protective film and etching prevention film may be formed of an organic insulating material. As such, by completing the thin film transistor and forming the flexible substrate on the thin film transistor substrate, misalignment of the thin film due to the characteristics of the flexible substrate can be prevented. Therefore, electrical characteristics and reliability of the flexible liquid crystal display may be improved.

Description

Manufacturing method of liquid crystal display device {METHOD OF MANUFACTURING LIQUID CRYSTAL DISPLAY}

1 is a layout view of a thin film transistor array panel for a liquid crystal display according to an exemplary embodiment of the present invention.

2 and 3 are cross-sectional views of the liquid crystal display including the thin film transistor array panel illustrated in FIG. 1 taken along lines II-II and III-III of FIG. 1.

4 is a layout view of a thin film transistor array panel at an intermediate stage of manufacturing the thin film transistor array panel illustrated in FIG. 1 according to an exemplary embodiment of the present disclosure;

5 and 6 are cross-sectional views of the thin film transistor array panel illustrated in FIG. 4 taken along lines V-V ′ and VI-VI ′.

FIG. 7 is a layout view of a thin film transistor array panel in the next step of FIG. 4;

8 and 9 are cross-sectional views of the thin film transistor array panel illustrated in FIG. 7 taken along the lines VIII-VIII 'and IX-IX',

FIG. 10 is a layout view of a thin film transistor array panel in the next step of FIG. 7;

11 and 12 are cross-sectional views of the thin film transistor array panel illustrated in FIG. 10 taken along lines XI-XI ′ and XII-XII ′,

FIG. 13 is a layout view of a thin film transistor array panel in the next step of FIG. 10.

14 and 15 are cross-sectional views of the thin film transistor array panel illustrated in FIG. 13 taken along lines XIV-XIV 'and XV-XV',

FIG. 16 is a layout view of a thin film transistor array panel in the next step of FIG. 13;

17 and 18 are cross-sectional views of the thin film transistor array panel illustrated in FIG. 16 taken along lines XVII-XVII ′ and XVIII-XVIII ′.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a liquid crystal display, and more particularly, to a method of manufacturing a flexible liquid crystal display including a plastic substrate.

As the Internet becomes more popular and the amount of information communicated explosively, the future will create an environment of 'ubiquitous display' where people can access information anytime and anywhere. And the role of portable displays such as PDAs have become important. In order to implement such a ubiquitous display environment, the portability of the display is required to directly access information at a desired time and place, and a large screen characteristic for displaying various multimedia information is required. Accordingly, in order to simultaneously satisfy such portability and large screen characteristics, there is a need to develop a display in a form that can be expanded and used when functioning as a display by giving flexibility to the display and folded and stored when carrying.

A typical liquid crystal display (LCD) among flat panel displays currently being used is composed of two glass substrates on which electrodes are formed and a liquid crystal layer interposed therebetween. The main form is to control the amount of light transmitted by rearranging the liquid crystal molecules of the layer.

By the way, since such a liquid crystal display uses a heavy and fragile glass substrate, portability and large screen display are limited.

Therefore, recently, a liquid crystal display device using a flexible plastic substrate, which is light in weight and strong in impact, has been developed.

In the case of using a flexible plastic substrate instead of the conventional glass substrate, it may have many advantages over the conventional glass substrate in terms of portability, safety, and light weight.

 In addition, in terms of process, the plastic substrate can be manufactured by deposition or printing, thereby lowering the manufacturing cost, and, unlike the conventional sheet-based process, a roll-to-roll process Since the display device can be manufactured, a low cost display device can be manufactured through mass production.

However, since the plastic substrate may be shrunk by the process temperature, there is a difficulty in proceeding the process at a low temperature.

In order to prevent shrinkage of the plastic, a plastic substrate is attached to the auxiliary substrate with an adhesive, and then a flexible resin is formed by forming a thin film structure on the plastic substrate or by using a spin coating method on the auxiliary substrate. After coating, a plastic substrate is formed and a thin film structure is formed thereon to form a thin film transistor array panel. Subsequently, the auxiliary substrate and the plastic substrate are separated by a laser process or a chemical process in a subsequent process, and the separation process of the auxiliary substrate and the plastic substrate is easy as the adhesive and the plastic substrate are deformed by the thermal process. There is a difficulty in the process that is not.

In addition, due to the properties of the plastic, the alignment and contact holes between the thin films may be misaligned, and thus the electrical characteristics and reliability of the liquid crystal display may be degraded.

Accordingly, an object of the present invention is to prevent misalignment of the layer arrangement as the plastic substrate of the flexible liquid crystal display shrinks, thereby improving electrical characteristics and reliability of the flexible liquid crystal display.

A method of manufacturing a liquid crystal display according to the present invention includes forming a thin film transistor on an auxiliary substrate made of glass, applying a resin on the thin film transistor, and forming a flexible substrate having a flat top surface. Removing the glass substrate using hydrogen fluoride (HF).

The forming of the thin film transistor may include forming a pixel electrode on an auxiliary substrate, forming a switching element including a first terminal, a second terminal, and a third terminal connected to the pixel electrode; The method may include forming a first signal line connected to the second terminal, and forming a second signal line intersecting the first signal line and connected to the third terminal of the switching element.

Forming a pixel electrode on an auxiliary substrate made of glass, forming a passivation layer on the auxiliary substrate and the pixel electrode, forming a data line and a drain electrode including a source electrode on the passivation layer, and the source electrode facing each other; And forming a resistive contact member on the drain electrode, forming a semiconductor on the protective layer exposed between the resistive contact member and the source electrode and the drain electrode, and forming an insulating layer on the semiconductor, the data line, and the drain electrode. Forming a gate line including a gate electrode on the insulating layer, forming a first barrier layer on the gate line and the insulating layer, and forming a flexible substrate by applying a synthetic resin on the first barrier layer. Forming a second barrier layer on the flexible substrate And forming an etch stop layer on the second barrier layer, and removing the auxiliary substrate, wherein the first and second barrier layers are formed of a nitride layer or an oxide layer, and the passivation layer and the etch barrier layer are formed of an organic insulating material. It can be configured as.

The method may further include performing a heat treatment process after forming the semiconductor.

After forming the semiconductor, the method may further include implanting impurity ions into a region where the ohmic contact is present.

The flexible substrate may include a plastic substrate, and the upper surface of the flexible substrate may be flat.

Flexible substrate having uneven top and flat bottom surfaces, gate line formed on the top surface, gate insulating film formed on the gate line, semiconductor formed on the gate insulating film, data line formed on the semiconductor And a passivation layer formed on the drain electrode, the data line and the drain electrode and having a contact hole exposing a portion of the drain electrode, and a pixel electrode formed on the passivation layer and connected to the drain electrode through the contact hole. Include.

The drain electrode may have a protrusion positioned in the contact hole of the passivation layer, and the protrusion may contact the pixel electrode.

A first barrier film formed between the upper surface of the flexible substrate and the gate line, a second barrier film formed on the lower surface of the flexible substrate, and an etch stop layer formed on the lower surface of the second barrier film. It may further include.

Then, the liquid crystal display according to an exemplary embodiment of the present invention and a manufacturing method thereof will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification. When a portion of a layer, film, region, plate, etc. is said to be "on top" of another part, this includes not only when the other part is "right over" but also when there is another part in the middle. On the contrary, when a part is "just above" another part, there is no other part in the middle.

First, the structure of a liquid crystal display according to an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 1 to 3.

1 is a layout view of a thin film transistor array panel for a liquid crystal display according to an exemplary embodiment of the present invention, and FIGS. 2 and 3 illustrate a liquid crystal display including the thin film transistor array panel illustrated in FIG. And cross-sectional views taken along line III-III.

1 to 3, a second barrier layer 114 and an etch stop layer 30 are sequentially formed on the back surface of the insulating substrate 110 made of plastic. Here, the etch stop layer 30 is made of an organic insulating material that does not react with hydrogen fluoride (HF), the second barrier layer 114 is preferably made of a nitride film or an oxide film.

The first barrier layer 111 is formed on the entire surface of the insulating substrate 110. In this case, the first barrier film 111 is preferably formed of a nitride film or an oxide film similarly to the second barrier film 114.

A plurality of gate lines 121 and a plurality of storage electrode lines 131 are formed on the first barrier layer 111.

The gate line 121 transmits a gate signal and mainly extends in a horizontal direction. Each gate line 121 includes a plurality of gate electrodes 124 protruding downward and an end portion 129 having a large area for connection with another layer or an external driving circuit. The storage electrode line 131 receives a predetermined voltage, and includes a stem line extending substantially in parallel with the gate line 121 and a plurality of pairs of storage electrodes 133a and 133b separated therefrom. Each of the storage electrode lines 131 is positioned between two adjacent gate lines 121, and the stem line is closer to the lower side of the two gate lines 121. Each of the sustain electrodes 133a and 133b has a fixed end connected to the stem line and a free end opposite thereto. The fixed end of one sustain electrode 133b has a large area, and its free end is divided into two parts, a straight part and a bent part. However, the shape and arrangement of the storage electrode line 131 may be modified in various ways.

The gate line 121 and the storage electrode line 131 may be formed of aluminum-based metal such as aluminum (Al) or aluminum alloy, silver-based metal such as silver (Ag) or silver alloy, copper-based metal such as copper (Cu) or copper alloy, or molybdenum ( It may be made of molybdenum-based metals such as Mo) or molybdenum alloy, chromium (Cr), tantalum (Ta) and titanium (Ti). However, they may have a multilayer structure including two conductive films (not shown) having different physical properties. One of the conductive films is made of a low resistivity metal such as an aluminum-based metal, a silver-based metal, or a copper-based metal to reduce signal delay or voltage drop. On the other hand, other conductive films are made of other materials, particularly materials having excellent physical, chemical and electrical contact properties with indium tin oxide (ITO) and indium zinc oxide (IZO), such as molybdenum-based metals, chromium, titanium, tantalum, and the like. Good examples of such a combination include a chromium bottom film and an aluminum (alloy) top film, and an aluminum (alloy) bottom film and a molybdenum (alloy) top film. However, the gate line 121 and the storage electrode line 131 may be made of various metals and conductors.

Side surfaces of the gate line 121 and the storage electrode line 131 are inclined with respect to the surface of the substrate 110, and the inclination angle is preferably about 30 ° to about 80 °.

A gate insulating layer 140 made of silicon nitride (SiNx) or silicon oxide (SiOx) is formed on the gate line 121 and the storage electrode line 131.

A plurality of linear semiconductors 151 made of amorphous silicon are formed on the gate insulating layer 140. The linear semiconductor 151 mainly extends in the longitudinal direction and includes a plurality of projections 154 extending toward the gate electrode 124. The linear semiconductor 151 has a wider width in the vicinity of the gate line 121 and the storage electrode line 131 and covers them widely.

Linear and island ohmic contacts 163 and 165 are sequentially formed on the semiconductor 151.

The ohmic contacts 163 and 165 may be made of a material such as amorphous silicon and polycrystalline silicon doped with a high concentration of n-type phosphorus such as phosphorus or p-type impurities such as boron (B) or made of silicide. . The ohmic contact 163 has a plurality of protrusions 163, and the protrusion 163 and the ohmic contact 165 are paired and disposed on the protrusion 154 of the semiconductor 151.

Side surfaces of the semiconductors 151 and 154 and the ohmic contacts 163 and 165 are also inclined with respect to the surface of the substrate 110, and the inclination angle is about 30 ° to 80 °.

A plurality of data lines 171 and a plurality of drain electrodes 175 are formed on the ohmic contacts 163 and 165 and the gate insulating layer 140.

The data line 171 transmits a data signal and mainly extends in the vertical direction to cross the gate line 121. Each data line 171 also crosses the storage electrode line 131 and runs between adjacent sets of storage electrodes 133a and 133b. Each data line 171 includes a plurality of source electrodes 173 extending toward the gate electrode 124 and an end portion 179 having a large area for connection with another layer or an external driving circuit. The drain electrode 175 is separated from the data line 171 and faces the source electrode 173 with respect to the gate electrode 124.

Each drain electrode 175 has one wide end portion and the other end having a rod shape, and the rod end portion is partially surrounded by the bent source electrode 173.

One gate electrode 124, one source electrode 173, and one drain electrode 175 together with the protrusion 154 of the semiconductor 151 form one thin film transistor (TFT). A channel of the transistor is formed in the protrusion 154 between the source electrode 173 and the drain electrode 175.

The first barrier layer 111 on the liquid crystal display TFT has a function of preventing moisture in the air from adsorbing to the thin film transistor to lower electrical characteristics of the thin film transistor. Accordingly, the electrical characteristics of the liquid crystal display device can be improved.

The data line 171 and the drain electrode 175 are preferably made of a refractory metal such as molybdenum, chromium, tantalum, titanium, or an alloy thereof, and a conductive film (not shown) such as a refractory metal and a low resistance material conductive film. It may have a multilayer film structure composed of (not shown). Examples of the multilayer film structure include a double film of chromium or molybdenum (alloy) lower film and an aluminum (alloy) upper film, a triple layer of molybdenum (alloy) lower film, aluminum (alloy) interlayer and molybdenum (alloy) upper film. However, the data conductors 171 and 175 may be made of various other metals or conductors.

The data conductors 171 and 175 also preferably have their side surfaces inclined at an inclination angle of 30 ° to 80 ° with respect to the surface of the substrate 110.

The ohmic contacts 163 and 165 exist only between the semiconductor 151 below and the data line 171 and the drain electrode 175 thereon, thereby lowering the contact resistance therebetween.

The passivation layer 180 is formed on the data line 171, the drain electrode 175, and the exposed semiconductor 151.

The passivation layer 180 is formed of an organic insulator. Here, the organic insulator may have photosensitivity and the dielectric constant thereof is preferably about 4.0 or less.

The passivation layer 180 is formed with a plurality of contact holes 181, 182, and 185 exposing the end portion 179 and the drain electrode 175 of the data line 171, respectively. The gate insulating layer 140 includes a plurality of contact holes 181 exposing the end portion 129 of the gate line 121 and a plurality of contact holes 183a exposing a part of the sustain electrode line 131 near the fixed end of the sustain electrode 133b. And a plurality of contact holes 183b exposing a straight portion of the free end of the sustain electrode 133a. Thus, the upper surface of the lower passivation layer 180 is partially exposed through the contact holes 181, 182, and 185.

A plurality of pixel electrodes 191, a plurality of overpasses 83, and a plurality of contact assistants 81 and 82 are formed on the passivation layer 180. They may be made of a transparent conductive material such as ITO or IZO or a reflective metal such as aluminum, silver, chromium or an alloy thereof.

The pixel electrode 191 is physically and electrically connected to the drain electrode 175 through the contact hole 185 and receives a data voltage from the drain electrode 175. The pixel electrode 191 to which the data voltage is applied has a liquid crystal between the two electrodes by generating an electric field together with a common electrode (not shown) of another display panel (not shown) to which a common voltage is applied. The direction of the liquid crystal molecules in the layer (not shown) is determined. The polarization of light passing through the liquid crystal layer varies according to the direction of the liquid crystal molecules determined as described above. The pixel electrode 191 and the common electrode form a capacitor (hereinafter, referred to as a "liquid crystal capacitor") to maintain an applied voltage even after the thin film transistor is turned off.

The pixel electrode 191 overlaps the storage electrode line 131 including the storage electrodes 133a and 133b. A capacitor formed by the pixel electrode 191 and the drain electrode 171 electrically connected to the pixel electrode 191 overlapping the storage electrode line 131 is called a storage capacitor, and the storage capacitor enhances the voltage holding capability of the liquid crystal capacitor.

The contact auxiliary members 81 and 82 are connected to the end portion 129 of the gate line 121 and the end portion 179 of the data line 171 through the contact holes 181 and 182, respectively. The contact auxiliary members 81 and 82 compensate for and protect the adhesion between the end portions 179 and 129 of the data line 171 and the gate line 121 and the external device.

The connecting leg 83 crosses the gate line 121 and exposes the exposed portion of the storage electrode line 131 and the storage electrode through contact holes 183a and 183b positioned on opposite sides with the gate line 121 interposed therebetween. 133b) is connected to the exposed end of the free end. The storage electrode lines 131 including the storage electrodes 133a and 133b may be used together with the connecting legs 83 to repair defects in the gate line 121, the data line 171, or the thin film transistor.

Next, a method of manufacturing the thin film transistor array panel for the liquid crystal display device illustrated in FIGS. 1 to 3 will be described in detail with reference to FIGS. 4 to 14.

FIG. 4 is a layout view of a thin film transistor array panel in an intermediate step of manufacturing the thin film transistor array panel shown in FIG. 1 according to an exemplary embodiment of the present invention, and FIGS. 5 and 6 show the thin film transistor array panel shown in FIG. 7 is a cross-sectional view taken along line V ′ and line VI-VI ′, and FIG. 7 is a layout view of the thin film transistor array panel in the next step of FIG. 4, and FIGS. 8 and 9 are VIII-VIII for the thin film transistor array panel shown in FIG. 7. FIG. 10 is a cross-sectional view taken along line 'IX and line IX-IX', FIG. 10 is a layout view of a thin film transistor array panel in the next step of FIG. 7, and FIGS. 11 and 12 are XI-XI's thin film transistor array panel shown in FIG. A cross-sectional view taken along the line and XII-XII ', FIG. 13 is a layout view of a thin film transistor array panel in the next step of FIG. 10, and FIGS. 14 and 15 are XIV-XIV' lines of the thin film transistor array panel shown in FIG. And along XV-XV ' 16 is a layout view of a thin film transistor array panel in the next step of FIG. 13, and FIGS. 17 and 18 are cross-sectional views taken along lines XVII-XVII ′ and XVIII-XVIII ′ of the thin film transistor array panel illustrated in FIG. 16. to be.

First, as shown in FIGS. 4 to 6, a transparent electrode such as ITO or IZO is laminated on the auxiliary substrate 50 made of glass by sputtering, and the plurality of pixel electrodes 191 and the connecting member are formed by a photolithography process. (81, 82) are formed.

Next, as shown in FIGS. 7 to 9, the passivation layer 180 is coated on the pixel electrode 191, the connection members 81 and 82, and the auxiliary substrate 50, and then patterned to form the connection members 81 and 82. ) And contact holes 181, 182, and 185 exposing the pixel electrode 191.

Subsequently, as shown in FIGS. 10 to 12, the metal layer is sputtered and photo-etched on the passivation layer 180 and the contact holes 181, 182, and 185, and the photolithography is performed to drain the drain electrode 175 and the source electrode 173. And a plurality of data lines 171 including end portions 179 for contact with an external data driving circuit. Here, the drain electrode 175 is electrically connected to the pixel electrode 191 through the contact hole 185, and the end portion 179 of the data line 171 is connected to the connection member 82 through the contact hole 182. ) Makes an electrical connection.

Next, as illustrated in FIGS. 13 to 15, an impurity doped amorphous silicon layer (not shown) is doped with impurities on the data line 171 including the source electrode 173 and the drain electrode 173. ) And patterned to form the ohmic contacts 163 and 165.

Then, an intrinsic amorphous silicon layer is formed on the source electrode 173, the drain electrode 175, and the ohmic contacts 163 and 165, and patterned to form the intrinsic semiconductor 151. In this case, one portion of the intrinsic semiconductor 151 contacts the ohmic contact 163 existing on the source electrode 173, and the other portion contacts the ohmic contact 165 existing on the drain electrode 175. Here, the source electrode 173 and the drain electrode 175 face each other with respect to the intrinsic semiconductor 151.

Next, a high temperature heat treatment process is performed. This thermal process is a step of preventing an oxide film from being formed between the ohmic contacts 163 and 165 and the intrinsic semiconductor 151, and reduces the contact surface resistance between the intrinsic semiconductor 151 and the ohmic contacts 163 and 165. However, impurity ions may be implanted into a region where the ohmic contacts 163 and 165 are present to increase the ion concentration between the ohmic interface between the ohmic contacts 163 and 165 and the intrinsic semiconductor 151, thereby reducing contact surface resistance.

16 to 18, the gate insulating layer 140 is formed on the passivation layer 180, the data line 171, the drain electrode 175, and the intrinsic semiconductor 151 using a chemical vapor deposition method. Form.

Next, the gate insulating layer 140 on the contact hole 181 is removed to expose the connection member 81.

Thereafter, the gate insulating layer 140 includes a plurality of gate lines 121 including end portions 129 for contact with the gate electrode 124 and the external gate driving circuit, and the storage electrodes 133a and 133b. A plurality of sustain electrode lines 131 are formed. In this case, the end portion 129 of the gate line 121 is electrically connected to the connection member 181 through the contact hole 181.

As such, one gate electrode 124, one source electrode 173, and one drain electrode 175 form one thin film transistor (TFT) together with the semiconductor 151, and the source electrode 173. ) And a channel is formed in the semiconductor 151 existing between the drain electrode and the drain electrode 175. The thin film transistor controls the data signal transmitted to the pixel electrode 191 through the data line 171 according to the gate signal transmitted through the gate line 121.

When the thin film transistor for a liquid crystal display is exposed to air, electrical properties may be degraded as it is oxidized by reacting with moisture and oxygen present in the air.

In the present invention, the first barrier layer 111 is formed on the entire upper surface of the thin film transistor in order to prevent the electrical characteristics of the thin film transistor from decreasing. Here, the first barrier film 111 is preferably made of a nitride film or an oxide film. The first barrier layer 111 prevents the thin film transistor from contacting with moisture and oxygen in the air.

Next, the flexible synthetic resin is coated on the first barrier layer 111 to form the flexible substrate 110 including the plastic substrate. At this time, the upper surface of the flexible substrate 110 is flat.

A second barrier layer 114 made of a nitride film or an oxide film is formed on the flexible substrate 110, and an etch stop layer 30 is formed thereon. Here, the etch stop layer 30 is preferably made of an organic insulating material.

Next, as shown in FIGS. 1 to 3, the flexible substrate including the thin film transistor formed on the flexible substrate 110 by removing the auxiliary substrate 50 made of glass using hydrogen fluoride (HF). A thin film transistor array panel for a liquid crystal display device is formed.

Here, the etch stop layer 30 and the passivation layer 180 made of an organic material prevent the thin film transistor from being damaged by hydrogen fluoride (HF).

Conventionally, a flexible substrate is attached to an auxiliary substrate with an adhesive, and then a flexible substrate is formed by forming a thin film structure on the flexible substrate or applying a flexible synthetic resin on the auxiliary substrate by using a spin coating method. After forming, a thin film structure is formed thereon to form a thin film transistor array panel. Accordingly, the flexible substrate bends or shrinks due to the heat generated by the thin film deposition and patterning process. As a result, the thin film array, the contact holes, and the like are misaligned, thereby deteriorating electrical characteristics and reliability of the liquid crystal display.

However, in the present invention, a thin film transistor is formed on the auxiliary substrate 50 made of glass which is not contracted or bent by process heat, and a flexible substrate 110 having a flat upper surface is formed on the completed thin film transistor. The auxiliary substrate 50 is removed with HF to form a thin film transistor array panel for a flexible liquid crystal display. As such, the thin film transistor having a predetermined thin film structure is formed in advance on the auxiliary substrate 50 made of glass, and then the flexible substrate 110 is formed on the thin film transistor. Can be prevented from being misaligned, thereby improving electrical characteristics and reliability of the flexible liquid crystal display.

According to the present invention, a thin film transistor is formed on an auxiliary substrate made of glass, and a flexible substrate is formed by applying a synthetic resin containing plastic on the thin film transistor and the auxiliary substrate, and then the auxiliary substrate is removed using hydrogen fluoride. A thin film transistor array panel is formed. As such, by completing the thin film transistor and forming the flexible substrate on the thin film transistor substrate, misalignment of the thin film due to the characteristics of the flexible substrate can be prevented. Therefore, electrical characteristics and reliability of the flexible liquid crystal display may be improved.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

Claims (10)

Forming a thin film transistor on an auxiliary substrate made of glass, Applying a resin on the thin film transistor to form a flexible substrate having a flat upper surface; Removing the auxiliary glass substrate using hydrogen fluoride (HF) Method of manufacturing a liquid crystal display comprising a. In claim 1, Forming the thin film transistor is Forming a pixel electrode on the auxiliary substrate, Forming a switching device including a first terminal, a second terminal, and a third terminal connected to the pixel electrode; Forming a first signal line connected to the second terminal of the switching element, and Forming a second signal line crossing the first signal line and connected to the third terminal of the switching element; Method of manufacturing a liquid crystal display comprising a. Forming a pixel electrode on an auxiliary substrate made of glass, Forming a passivation layer on the auxiliary substrate and the pixel electrode; Forming a data line and a drain electrode including a source electrode on the passivation layer; Forming an ohmic contact on the source electrode and the drain electrode facing each other, Forming a semiconductor on the protective layer exposed between the ohmic contact and the source electrode and the drain electrode, Forming an insulating film on the semiconductor, the data line and the drain electrode; Forming a gate line including a gate electrode on the insulating layer, Forming a first barrier layer on the gate line and the insulating layer; Applying a synthetic resin on the first barrier film to form a flexible substrate, Forming a second barrier layer on the flexible substrate, Forming an etch stop layer on the second barrier layer; Removing the auxiliary substrate Including; The first and second barrier layers may be formed of a nitride layer or an oxide layer, and the passivation layer and the etch stop layer may be formed of an organic insulating material. In claim 3, And forming a semiconductor and then performing a heat treatment process. In paragraph 3 And implanting impurity ions into a region in which the ohmic contact is present after forming the semiconductor. In claim 3, The flexible substrate is a manufacturing method of a liquid crystal display device comprising a plastic substrate. In claim 3, And a top surface of the flexible substrate is flat. A flexible substrate having an upper surface with irregularities and a flat lower surface, A gate line formed on the upper surface, A gate insulating film formed on the gate line, A semiconductor formed on the gate insulating film, A data line and a drain electrode formed on the semiconductor; A protective film formed on the data line and the drain electrode and having a contact hole exposing a part of the drain electrode; A pixel electrode formed on the passivation layer and connected to the drain electrode through the contact hole; Thin film transistor array panel comprising a.  In claim 8, The drain electrode has a protrusion disposed in a contact hole of the passivation layer, and the protrusion contacts the pixel electrode. The method of claim 8 or 9, A first barrier film formed between an upper surface of the flexible substrate and the gate line, A second barrier film formed on the bottom surface of the flexible substrate, An etch stop layer formed on the bottom surface of the second barrier layer. Thin film transistor display panel further comprising.

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