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JPS6428817A - Ohmic contact formation - Google Patents

Ohmic contact formation

Info

Publication number
JPS6428817A
JPS6428817A JP18479887A JP18479887A JPS6428817A JP S6428817 A JPS6428817 A JP S6428817A JP 18479887 A JP18479887 A JP 18479887A JP 18479887 A JP18479887 A JP 18479887A JP S6428817 A JPS6428817 A JP S6428817A
Authority
JP
Japan
Prior art keywords
film
thickness
contact resistance
ohmic contact
reproducibility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18479887A
Other languages
Japanese (ja)
Inventor
Namiki Ootsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP18479887A priority Critical patent/JPS6428817A/en
Publication of JPS6428817A publication Critical patent/JPS6428817A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To minimize the variability of contact resistance for improvement of the reproducibility of the contact resistance by a method wherein a Ge film exceeding a half in thickness of an Au film is formed on the Au film and an Ni film is formed on the laminated structure. CONSTITUTION:An ohmic contact is made with the surface of an n type compound semiconductor layer 1. At this time, an Au film 2, a Ge film 3 and an Ni film 4 in thickness exceeding a half of the thickness of Au film 2 are laminatedly formed on the ohmic contact making region. The film quality is kept constant by controlling the ratio of Au to Ge as well as the film thickness thereof. Through these procedures, the dispertion of contact resistance can be minimized to enhance the reproducibility of contact resistance.
JP18479887A 1987-07-23 1987-07-23 Ohmic contact formation Pending JPS6428817A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18479887A JPS6428817A (en) 1987-07-23 1987-07-23 Ohmic contact formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18479887A JPS6428817A (en) 1987-07-23 1987-07-23 Ohmic contact formation

Publications (1)

Publication Number Publication Date
JPS6428817A true JPS6428817A (en) 1989-01-31

Family

ID=16159479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18479887A Pending JPS6428817A (en) 1987-07-23 1987-07-23 Ohmic contact formation

Country Status (1)

Country Link
JP (1) JPS6428817A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5316615A (en) * 1990-03-23 1994-05-31 International Business Machines Corporation Surfactant-enhanced epitaxy
US5628834A (en) * 1990-03-23 1997-05-13 International Business Machines Corporation Surfactant-enhanced epitaxy
US5997638A (en) * 1990-03-23 1999-12-07 International Business Machines Corporation Localized lattice-mismatch-accomodation dislocation network epitaxy

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5316615A (en) * 1990-03-23 1994-05-31 International Business Machines Corporation Surfactant-enhanced epitaxy
US5628834A (en) * 1990-03-23 1997-05-13 International Business Machines Corporation Surfactant-enhanced epitaxy
US5997638A (en) * 1990-03-23 1999-12-07 International Business Machines Corporation Localized lattice-mismatch-accomodation dislocation network epitaxy

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