JPS6428817A - Ohmic contact formation - Google Patents
Ohmic contact formationInfo
- Publication number
- JPS6428817A JPS6428817A JP18479887A JP18479887A JPS6428817A JP S6428817 A JPS6428817 A JP S6428817A JP 18479887 A JP18479887 A JP 18479887A JP 18479887 A JP18479887 A JP 18479887A JP S6428817 A JPS6428817 A JP S6428817A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thickness
- contact resistance
- ohmic contact
- reproducibility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000000034 method Methods 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To minimize the variability of contact resistance for improvement of the reproducibility of the contact resistance by a method wherein a Ge film exceeding a half in thickness of an Au film is formed on the Au film and an Ni film is formed on the laminated structure. CONSTITUTION:An ohmic contact is made with the surface of an n type compound semiconductor layer 1. At this time, an Au film 2, a Ge film 3 and an Ni film 4 in thickness exceeding a half of the thickness of Au film 2 are laminatedly formed on the ohmic contact making region. The film quality is kept constant by controlling the ratio of Au to Ge as well as the film thickness thereof. Through these procedures, the dispertion of contact resistance can be minimized to enhance the reproducibility of contact resistance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18479887A JPS6428817A (en) | 1987-07-23 | 1987-07-23 | Ohmic contact formation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18479887A JPS6428817A (en) | 1987-07-23 | 1987-07-23 | Ohmic contact formation |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6428817A true JPS6428817A (en) | 1989-01-31 |
Family
ID=16159479
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18479887A Pending JPS6428817A (en) | 1987-07-23 | 1987-07-23 | Ohmic contact formation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6428817A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5316615A (en) * | 1990-03-23 | 1994-05-31 | International Business Machines Corporation | Surfactant-enhanced epitaxy |
US5628834A (en) * | 1990-03-23 | 1997-05-13 | International Business Machines Corporation | Surfactant-enhanced epitaxy |
US5997638A (en) * | 1990-03-23 | 1999-12-07 | International Business Machines Corporation | Localized lattice-mismatch-accomodation dislocation network epitaxy |
-
1987
- 1987-07-23 JP JP18479887A patent/JPS6428817A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5316615A (en) * | 1990-03-23 | 1994-05-31 | International Business Machines Corporation | Surfactant-enhanced epitaxy |
US5628834A (en) * | 1990-03-23 | 1997-05-13 | International Business Machines Corporation | Surfactant-enhanced epitaxy |
US5997638A (en) * | 1990-03-23 | 1999-12-07 | International Business Machines Corporation | Localized lattice-mismatch-accomodation dislocation network epitaxy |
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