JPS63287046A - Lead frame - Google Patents
Lead frameInfo
- Publication number
- JPS63287046A JPS63287046A JP12188187A JP12188187A JPS63287046A JP S63287046 A JPS63287046 A JP S63287046A JP 12188187 A JP12188187 A JP 12188187A JP 12188187 A JP12188187 A JP 12188187A JP S63287046 A JPS63287046 A JP S63287046A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- lead frame
- lead
- mounting base
- coining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000000465 moulding Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 description 62
- 239000010970 precious metal Substances 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010273 cold forging Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は半導体集積回路用のリードフレーム、特に、リ
ード部先端に部分めっきを施すに際し、良好なめっきを
行うことができるリードフレームの構造に関する。[Detailed Description of the Invention] <Industrial Application Field> The present invention relates to a lead frame for a semiconductor integrated circuit, and particularly to a structure of a lead frame that enables good plating when partial plating is applied to the tip of a lead part. .
〈従来の技術〉
リードフレームは、中央部にＩＣ素子を搭載する搭載台
と、その周囲に先端部にてＩＣ素子上の電極とワイヤボ
ンディングされる複数のリード部を形成したもので、搭
載台およびリード部先端部に金、銀等の貴金属めっきが
施されている。<Conventional technology> A lead frame has a mounting base on which an IC element is mounted in the center, and a plurality of lead parts formed around the mounting base that are wire-bonded to electrodes on the IC element at their tips. The tip of the lead is plated with a precious metal such as gold or silver.
従来、このようなリードフレームは、鉄、鉄合金、銅、
銅合金の薄板または条材を素材とし、この素材にフォト
エツチングまたはプレス打抜き加工を施して不要部分を
くり抜いた後、ＩＣ搭載台やリード部先端部のめっきを
施すべき部分に、めっき密着性の向上のために、コイニ
ングパンチ等による加圧成形を施して、これらめっきを
施すべき部分を平滑化し、次いで少なくともリード部先
端を露出するようなマスクを用いて貴金属によるめっき
処理（これを部分めっきという）を行うことにより製造
している。Traditionally, such lead frames are made of iron, iron alloys, copper,
The material is a thin plate or strip of copper alloy, and after photo-etching or press punching is performed on this material to cut out unnecessary parts, the parts to be plated, such as the IC mounting stand and the tip of the lead, are coated to ensure plating adhesion. In order to improve the quality, the parts to be plated are smoothed by pressure forming using a coining punch, etc., and then plated with precious metal using a mask that exposes at least the tips of the leads (this is called partial plating). ).
このリードフレームの部分めっきを行う場合は、第３図
に示すように、前述のコイニングパンチ等によって段差
部５が形成された側の面にめっき層６を形成するのであ
り、その方法は、めっきを施す部分に開口が設けられた
ゴム製等の軟質体マスクをめっき物に装着し、めっき液
の噴流を吹き付ける等により行っている。When performing partial plating on this lead frame, as shown in FIG. A soft mask made of rubber or the like with an opening in the area to be plated is attached to the plating object, and a jet of plating solution is sprayed onto the mask.
しかし、このような部分めっきでは、軟質体マスクと段
差部５との密着性が悪く、ずれを生じ易く、従ってめっ
き液が軟質体マスクにより十分にシールされないため、
めっき液が本来めっきを必要としない部分にまで流出す
るという事態が発生する。However, in such partial plating, the adhesion between the soft mask and the stepped portion 5 is poor and misalignment easily occurs, and therefore the plating solution is not sufficiently sealed by the soft mask.
A situation occurs in which the plating solution leaks to areas that do not originally require plating.
ところが、本来めっきを必要としない部分３１は前述の
コイニングパンチ等によってリード部の金属表面の平滑
化がなされていない部分であるから、そのようなめりき
不要部分３１にめっき液が付着しめっきがなされたとし
ても、そのめっき密着性は悪く、特に後工程で加熱処理
したとき、めっきのふくれやはがれが発生し、これがリ
ード部間の短絡事故の原因となり、ＩＣパッケージの信
頼性を低下させるという欠点があった。However, since the portion 31 that does not originally require plating is a portion where the metal surface of the lead portion has not been smoothed by the above-mentioned coining punch or the like, the plating solution adheres to such portion 31 that does not require plating, and plating is not performed. Even so, the adhesion of the plating is poor, and the plating may swell or peel, especially when heat treated in the post-process, which can cause short circuits between leads and reduce the reliability of the IC package. was there.
さらには、めっき不要部分に付着しためっきが原因で、
後工程で樹脂モールドした際のリードフレームと樹脂と
の密着性が悪化し、湿気の侵入を誘発することにより、
ＩＣパッケージの信頼性の低下を助長することとなった
。Furthermore, due to plating adhering to parts that do not require plating,
The adhesion between the lead frame and the resin when resin molded in the post-process deteriorates, causing moisture to enter.
This contributed to a decline in the reliability of the IC package.
〈発明が解決しようとする問題点〉
本発明の目的は、上述した従来技術の欠点を解消し、リ
ードフレームに部分めっきを施すに際し、めっき寸法を
確実に規定することによりＩＣパッケージの信頼性を向
上することができるリードフレームを提供することにあ
る。<Problems to be Solved by the Invention> The purpose of the present invention is to solve the above-mentioned drawbacks of the prior art and to improve the reliability of an IC package by reliably specifying the plating dimensions when partial plating is applied to a lead frame. The objective is to provide a lead frame that can be improved.
く問題点を解決するための手段〉 このような目的は以下の本発明によって達成される。Means to solve problems〉 These objects are achieved by the following invention.
即ち本発明は、中央部に半導体集積回路素子を搭載する
搭載台と、その周囲に前記搭載台に向って延出する複数
のリード部を有するリードフレームにおいて、 少なく
とも前記各リード部のめっきを施す部分の裏面側に加圧
成形により段差を設けたことを特徴とするリードフレー
ムである。That is, the present invention provides a lead frame having a mounting base on which a semiconductor integrated circuit element is mounted in the center and a plurality of lead parts extending toward the mounting base around the mounting base, in which at least each of the lead parts is plated. This lead frame is characterized by having a step formed on the back side of the part by pressure molding.
また、加圧成形は、コイニングパンチにより行うのが好
ましい。Further, the pressure molding is preferably performed using a coining punch.
以下本発明のリードフレームを、添付図面に示す好適実
施例について詳細に説明する。The lead frame of the present invention will be described in detail below with reference to preferred embodiments shown in the accompanying drawings.
第１図は、本発明のリードフレームの好適例を示す平面
図である。FIG. 1 is a plan view showing a preferred example of the lead frame of the present invention.
リードフレーム１は、その中央部に半導体集積回路（Ｉ
Ｃ）素子を搭載するための搭載台２を有する。この搭載
台２は目的とするＩＣ素子の大きさに対応した大きさを
有している。The lead frame 1 has a semiconductor integrated circuit (I
C) It has a mounting stand 2 for mounting the element. This mounting base 2 has a size corresponding to the size of the intended IC element.
搭載台２の周囲には、その搭載台２に向って延出する複
数のビン状のリード部３が形成されている。A plurality of bottle-shaped lead portions 3 are formed around the mounting base 2 and extending toward the mounting base 2.
リード部３の先端のリード先端部３０は搭載台２の近傍
に位置しており、ＩＣ素子上の電極との間でワイヤボン
ディングがなされ電気的に接続されるものである。A lead tip 30 at the tip of the lead portion 3 is located near the mounting base 2, and is electrically connected to an electrode on the IC element by wire bonding.
第１図に示すようにリード部３は、同図中の左右２方向
より中央に向って形成されており、リード先端部３０が
搭載台２に接近するよう適当に屈曲している。As shown in FIG. 1, the lead portion 3 is formed toward the center from the left and right directions in the figure, and is appropriately bent so that the lead tip portion 30 approaches the mounting base 2.
本発明のリードフレームは、第１図に示す例に限らず、
任意のパターン形状のリードフレームに適用しつるもの
である。The lead frame of the present invention is not limited to the example shown in FIG.
It can be applied to lead frames with any pattern shape.
第１図中の破線は、その内側をめっきエリア（めっきを
施すべき部分）とするめっきエリア境界線４を示す。
めっきエリアは少なくともリード先端部３０を含んでお
り、リードフレーム１は、このめっきエリアにおいて好
ましくはスポット状めフきにより貴金属めっきが施され
る。The broken line in FIG. 1 indicates a plating area boundary line 4 whose inner side is the plating area (portion to be plated).
The plating area includes at least the lead tip portion 30, and the lead frame 1 is plated with a precious metal preferably by spot plating in this plating area.
このめっきエリアにおいては、リードフレーム１の金属
表面を平滑化し、めっき密着性を良好にするために、好
ましくはコイニングパンチによる加圧成形が行われる。In this plating area, pressure forming is preferably performed using a coining punch in order to smooth the metal surface of the lead frame 1 and improve plating adhesion.
従来、めっきエリアに施すコイニングパンチは、第３図
に示すように、リードフレームのめっき層６を形成する
側の面（以下表面という）に段差部５が形成されるよう
に、コイニングパンチのダイスおよびポンチをセットし
て行っていた。Conventionally, as shown in FIG. 3, a coining punch applied to a plating area is used to punch the die of the coining punch so that a stepped portion 5 is formed on the side of the lead frame on which the plating layer 6 is to be formed (hereinafter referred to as the surface). I also set up a punch and went there.
しかし本発明では、従来法とは逆に、リードフレームの
めっきを施さない側の面（以下裏面という）に段差部５
が形成されるようにコイニングパンチ等を行う。 即ち
本発明のリードフレーム１の表面にはめっきエリア境界
線４を境に段差部５が形成されていないので、ゴム製等
の軟質体マスクをリードフレーム１に装着してスポット
状のめっきを行った際、リードフレーム１と軟質体マス
クとの密着性が良好で、メッキ液のシールが確実になさ
れるため、めっき液がめつきエリアをこえてめっき不要
部分３１に流出することがない。However, in the present invention, contrary to the conventional method, a stepped portion is formed on the unplated side of the lead frame (hereinafter referred to as the back side).
Perform a coining punch etc. so that a is formed. That is, since no stepped portion 5 is formed on the surface of the lead frame 1 of the present invention across the plating area boundary line 4, spot plating is performed by attaching a soft mask made of rubber or the like to the lead frame 1. At this time, the adhesion between the lead frame 1 and the soft mask is good, and the plating solution is reliably sealed, so that the plating solution does not leak beyond the plating area to the portions 31 that do not require plating.
このようなリードフレーム１の構成材料としては、鉄、
鉄合金、４２アロイ、コバール、銅、銅合金、Ａｌ１２
０３ 、ＢｅＯ等を用いた分散強化型銅合金等を挙げる
ことができる。The constituent materials of such a lead frame 1 include iron,
Iron alloy, 42 alloy, Kovar, copper, copper alloy, Al12
Examples include dispersion-strengthened copper alloys using 03, BeO, and the like.
また、リードフレーム１の板厚は０．１〜１．０ｍｍ程
度とするのが好ましい。Further, the thickness of the lead frame 1 is preferably about 0.1 to 1.0 mm.
コイニングパンチ等によってリードフレーム１の裏面に
形成される段差（コイニング深さ）は５〜１００μｍ程
度とするのがよい。 ５μｍ未満ではコイニングによる
表面平滑効果がなく、１００μｍをこえるとコイニング
が強すぎてリードが変形するおそれがあるからである。The level difference (coining depth) formed on the back surface of the lead frame 1 by a coining punch or the like is preferably about 5 to 100 μm. This is because if the thickness is less than 5 μm, there will be no surface smoothing effect due to coining, and if it exceeds 100 μm, coining will be too strong and the lead may be deformed.
なお、リードフレーム１の表面のめっきエリアに施され
るめっきは錫、半田等も可能であるが、好ましくは、金
、銀等の貴金属めっきがよく、その目付量は３〜１０μ
ｍ程度とされる。It should be noted that the plating applied to the plating area on the surface of the lead frame 1 may be tin, solder, etc., but preferably precious metal plating such as gold or silver is preferred, and the area weight is 3 to 10 μm.
It is said to be about m.
そして、第２図に示すように、めっき層６の上にワイヤ
７の一端がワイヤーボンディングされ、その他端は対応
する半導体素子上の電極と接続される。Then, as shown in FIG. 2, one end of the wire 7 is wire-bonded onto the plating layer 6, and the other end is connected to the electrode on the corresponding semiconductor element.
〈実施例〉
（実施例１）
第１図に示すパターン形状のリードフレーム（銅系合金
製）のめっきエリア（サイズ１０ｍｍＸ １０ ｍｍ）
の裏面側にコイニングパンチを施し、コイニング深さ２
０μｍの段差を形成した。<Example> (Example 1) Plating area (size 10 mm x 10 mm) of a lead frame (made of copper alloy) with the pattern shown in Figure 1
A coining punch is applied to the back side of the coining depth 2.
A level difference of 0 μm was formed.
コイニングパンチは、リードフレームの表面側に下ポン
チ、裏面側にめっきエリアと同サイズのダイスを装着し
、３００〜５００Ｋｇ／ｍｍ ２にて加圧成形（冷間鍛
造成形）を行った。The coining punch was equipped with a lower punch on the front side of the lead frame and a die of the same size as the plating area on the back side, and pressure forming (cold forging) was performed at 300 to 500 kg/mm 2 .
（比較例１）
リードフレームのめっきエリアの表面側にコイニングパ
ンチを施した以外は実施例１と同様とした。(Comparative Example 1) It was the same as Example 1 except that a coining punch was applied to the surface side of the plating area of the lead frame.
上記実施例１および比較例１のリードフレームに、めっ
きエリアと同サイズの開口を有するゴムー製の軟質体マ
スクを装着し、マスクの開口を通してノズルよりめっき
液を噴射する方式で電気めっきにより金めつきを施した
。A soft mask made of rubber having an opening of the same size as the plating area is attached to the lead frame of Example 1 and Comparative Example 1, and gold plating is performed by electroplating by spraying a plating solution from a nozzle through the opening of the mask. It has been marked.
これらのリードフレームについて、めっき不要部分への
めっき液の流出状況および、これらのリードフレームを
用いて作成したＩＣパッケージの信頼性を調査した。Regarding these lead frames, the leakage of the plating solution into areas where no plating was required and the reliability of IC packages made using these lead frames were investigated.
これについては、めっき液流出状況を目視観察により評
価したところ、比較例１ではめっき液の流出が認められ
たのに対し、実施例１ではほとんどめめっき液の流出が
認められなかった。Regarding this, when the plating solution outflow situation was evaluated by visual observation, in Comparative Example 1, outflow of the plating solution was observed, whereas in Example 1, almost no plating solution outflow was observed.
以上の結果から明らかなように、本発明のリードフレー
ムは、従来のリードフレームに比べめっき不要部分への
めつき液の流出が著減し、その結果ＩＣパッケージの信
頼性が向上されることがわかる。As is clear from the above results, the lead frame of the present invention significantly reduces the outflow of plating solution to areas where plating is not required, compared to conventional lead frames, and as a result, the reliability of the IC package is improved. Recognize.
〈発明の効果〉
本発明のリードフレームによれば、各リード部のめっき
を施す部分においてその裏面側に加圧成形により段差を
設けたことにより、ゴム製等の軟質体マスクをリードフ
レームに装着して部分めっきを行った際、リードフレー
ムと軟質体マスクとの密着性が良好で、めっき液のシー
ルが確実になされるため、めっき液がめつきエリアをこ
えて流出することがない。<Effects of the Invention> According to the lead frame of the present invention, a step is formed on the back side of each lead portion to be plated by pressure molding, so that a soft mask made of rubber or the like can be attached to the lead frame. When partial plating is performed, the lead frame and the soft mask have good adhesion and the plating solution is reliably sealed, so the plating solution does not leak beyond the plating area.
従って、めっき寸法が確実に規定され、ＩＣパッケージ
の信頼性が向上するとともに、めりきに使用する高価な
金、銀等の貴金属の浪費をも防止することができる。Therefore, the plating dimensions are reliably defined, the reliability of the IC package is improved, and waste of expensive precious metals such as gold and silver used for plating can be prevented.
さらに本発明のリードフレームは、コイニングパンチ等
によって形成される段差を、リードフレームの表面（従
来法）から裏面へ変更するだけでよいため、従来のリー
ドフレームの製造工程をほとんど変更する必要がなく、
従って、設備面等による製造コストの上昇がない。Furthermore, in the lead frame of the present invention, it is only necessary to change the step formed by a coining punch or the like from the front surface (conventional method) to the back surface of the lead frame, so there is almost no need to change the manufacturing process of conventional lead frames. ,
Therefore, there is no increase in manufacturing costs due to equipment, etc.
第１図は、本発明のリードフレームの好適例を示す平面
図である。
第２図は、本発明のリードフレームのリード部の拡大縦
断面図である。
第３図は、従来のリードフレームのリード部の拡大縦断
面図である。
符号の説明
１・・・リードフレーム、
２・・・搭載台、
３・・・リード部、
３０・・・リード先端部、
３１・・・めっき不要部分、
４・・・めっきエリア境界線、
５・・・段差部、
６・・・めっき層
７・・・ワイヤ
特許出願人 日立電線株式会社
代理人 弁理士 渡 辺 望 稔
ＦＩＧ、１
す″
ゼFIG. 1 is a plan view showing a preferred example of the lead frame of the present invention. FIG. 2 is an enlarged vertical cross-sectional view of the lead portion of the lead frame of the present invention. FIG. 3 is an enlarged vertical cross-sectional view of the lead portion of a conventional lead frame. Explanation of symbols 1... Lead frame, 2... Mounting stand, 3... Lead part, 30... Lead tip, 31... Part not requiring plating, 4... Plating area boundary line, 5 ...Stepped portion, 6... Plating layer 7... Wire patent applicant Hitachi Cable Co., Ltd. Agent Patent attorney Minoru Watanabe FIG, 1 ``ze''
Claims (2)
、その周囲に前記搭載台に向って延出する複数のリード
部を有するリードフレームにおいて、 少なくとも前記各リード部のめっきを施す部分の裏面側
に加圧成形により段差を設けたことを特徴とするリード
フレーム。(1) In a lead frame having a mounting base on which a semiconductor integrated circuit element is mounted in the center and a plurality of lead parts extending toward the mounting base around the mounting base, at least the portion of each lead part to be plated. A lead frame characterized by having a step formed on the back side by pressure molding.
許請求の範囲第１項に記載のリードフレーム。(2) The lead frame according to claim 1, wherein the pressure forming is performed using a coining punch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12188187A JPS63287046A (en) | 1987-05-19 | 1987-05-19 | Lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12188187A JPS63287046A (en) | 1987-05-19 | 1987-05-19 | Lead frame |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63287046A true JPS63287046A (en) | 1988-11-24 |
Family
ID=14822231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12188187A Pending JPS63287046A (en) | 1987-05-19 | 1987-05-19 | Lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63287046A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5028741A (en) * | 1990-05-24 | 1991-07-02 | Motorola, Inc. | High frequency, power semiconductor device |
-
1987
- 1987-05-19 JP JP12188187A patent/JPS63287046A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5028741A (en) * | 1990-05-24 | 1991-07-02 | Motorola, Inc. | High frequency, power semiconductor device |
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