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JPS6125220Y2 - - Google Patents

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Publication number
JPS6125220Y2
JPS6125220Y2 JP15120581U JP15120581U JPS6125220Y2 JP S6125220 Y2 JPS6125220 Y2 JP S6125220Y2 JP 15120581 U JP15120581 U JP 15120581U JP 15120581 U JP15120581 U JP 15120581U JP S6125220 Y2 JPS6125220 Y2 JP S6125220Y2
Authority
JP
Japan
Prior art keywords
conductor
spiral inductor
inductor
frequency
spiral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15120581U
Other languages
Japanese (ja)
Other versions
JPS5856416U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP15120581U priority Critical patent/JPS5856416U/en
Publication of JPS5856416U publication Critical patent/JPS5856416U/en
Application granted granted Critical
Publication of JPS6125220Y2 publication Critical patent/JPS6125220Y2/ja
Granted legal-status Critical Current

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  • Parts Printed On Printed Circuit Boards (AREA)

Description

【考案の詳細な説明】 この考案はスパイラルインダクタに関する。[Detailed explanation of the idea] This invention relates to a spiral inductor.

集積回路用の高抵抗基板、半絶縁性基板あるい
は絶縁性基板上に導体膜をスパイラル状に形成し
た、いわゆるスパイラルインダクタはUHF帯あ
るいはマイクロ波帯の集積回路に用いられる。
A so-called spiral inductor, in which a conductor film is formed in a spiral shape on a high-resistance substrate, semi-insulating substrate, or insulating substrate for integrated circuits, is used in integrated circuits in the UHF band or microwave band.

第1図は従来のスパイラルインダクタの導体膜
の形状を示す図で1は導体膜である。第2図は第
1図のクロスオーバ部分A−A′の断面図であ
り、11は基板、12は第1層導体、13は層間
絶縁膜、14は第2層導体である。
FIG. 1 is a diagram showing the shape of a conductor film of a conventional spiral inductor, and 1 is a conductor film. FIG. 2 is a sectional view of the crossover portion A-A' in FIG. 1, where 11 is a substrate, 12 is a first layer conductor, 13 is an interlayer insulating film, and 14 is a second layer conductor.

第3図はスパイラルインダクタの周波数特性を
示すグラフで横軸は周波数f、縦軸はインダクタ
ンスLである。理想的なインダクタのインダクタ
ンスは第3図の点線22に示すように周波数に無
関係に一定値Leになるべきであるが、実際のス
パイラルインダクタでは第3図の実線21に示す
ように周波数が高くなるにつれてインダクタンス
が大きくなる。しかもその大きくなる様子はスパ
イラルインダクタの形状をはじめとして種々の要
因に依存しているため予測不可能である。
FIG. 3 is a graph showing the frequency characteristics of a spiral inductor, with the horizontal axis representing the frequency f and the vertical axis representing the inductance L. The inductance of an ideal inductor should be a constant value Le regardless of the frequency, as shown by the dotted line 22 in Figure 3, but in an actual spiral inductor, the frequency increases as shown by the solid line 21 in Figure 3. The inductance increases accordingly. Moreover, the manner in which it increases is unpredictable because it depends on various factors including the shape of the spiral inductor.

したがつてスパイラルインダクタはインダクタ
ンスが一定値を示す低い周波数帯でしか使用する
ことができなかつた。代表的な値としてはインダ
クタンスが2nHの場合、使用可能な上限周波数は
約3GHzである。
Therefore, spiral inductors can only be used in low frequency bands where the inductance exhibits a constant value. As a typical value, when the inductance is 2nH, the upper limit frequency that can be used is approximately 3GHz.

この考案の目的は前記欠点を改善し、より高い
周波数帯でも使用可能なスパイラルインダクタを
提供することにある。
The purpose of this invention is to improve the above-mentioned drawbacks and provide a spiral inductor that can be used in higher frequency bands.

この考案によれば高抵抗基板、半絶縁性基板、
あるいは絶縁性基板上に導体膜をスパイラル状に
形成したインダクタにおいて、クロスオーバ部分
の導体線路幅を他の部分の導体線路幅より狭くし
たことを特徴とするスパイラルインダクタが得ら
れる。
According to this idea, high-resistance substrates, semi-insulating substrates,
Alternatively, in an inductor in which a conductor film is formed in a spiral shape on an insulating substrate, a spiral inductor is obtained in which the width of the conductor line at the crossover portion is narrower than the width of the conductor line at other portions.

第4図は、この考案によるスパイラルインダク
タの一実施例の導体膜の形状を示す図であり、3
1は導体膜である。クロスオーバ部分32の導体
線路幅は他の部分より狭くなつている。
FIG. 4 is a diagram showing the shape of the conductor film of one embodiment of the spiral inductor according to this invention, and
1 is a conductive film. The conductor line width of the crossover portion 32 is narrower than that of the other portions.

スパイラルインダクタが第3図に示すような周
波数特性を持つ理由はインダクタの自己共振現象
に起因することは従来から知られていた。そして
自己共振周波数はインダクタのスパイラル状導体
を直線状に伸したときの長さが、4分の1波長に
なる周波数であるとされていた。すなわち、スパ
イラルインダクタを分布定数伝送線路とみなした
ときの共振現象と考えられていた。しかしながら
種々の検討を行つた結果、必ずしも伝送線路とみ
なした共振ばかりではなく、クロスオーバ部分の
静電容量とインダクタのインダクタンスが共振す
る集中定数素子としての共振が無視し得ないこと
が本願考案者によつて明らかになつた。すなわち
両者の共振周波数を算出して比較したところ、後
者の方が低く、従つて特性に支配的な影響を与え
ることがわかつた。
It has been known for a long time that the reason why a spiral inductor has a frequency characteristic as shown in FIG. 3 is due to the self-resonance phenomenon of the inductor. The self-resonant frequency was considered to be the frequency at which the length of the spiral conductor of the inductor when stretched in a straight line is one quarter of a wavelength. In other words, it was considered to be a resonance phenomenon when the spiral inductor is considered as a distributed constant transmission line. However, as a result of various studies, the inventor of this application found that not only the resonance considered as a transmission line but also the resonance as a lumped element where the capacitance of the crossover part and the inductance of the inductor resonate cannot be ignored. It was made clear by That is, when the resonance frequencies of both were calculated and compared, it was found that the latter is lower and therefore has a dominant influence on the characteristics.

上記検討により、クロスオーバ部分の静電容量
を小さくすれば、自己共振周波数が高くなり使用
可能な上限周波数も高くなることは明らかであ
る。
From the above study, it is clear that if the capacitance of the crossover portion is reduced, the self-resonant frequency will increase and the usable upper limit frequency will also increase.

この考案によればクロスオーバ部分の導体線路
幅が他の部分より狭くなつているため、キヤバシ
タと考えた場合対向電極面積が小さくなり静電容
量は小さくなる。なおクロスオーバ部分の静電容
量を小さくするだけなら、他の部分の導体線路幅
も狭くしても差支えないように考えられるが、線
路幅を狭くすると損失が増加するため実用に耐え
なくなる。この考案では損失の増加を最小限に抑
えるためクロスオーバ部分のみの線路幅を狭くし
ているのである。
According to this invention, the width of the conductor line in the crossover portion is narrower than in other portions, so when considered as a capacitor, the area of the opposing electrodes becomes smaller and the capacitance becomes smaller. Note that if only the capacitance of the crossover portion is reduced, it may be possible to reduce the width of the conductor line in other parts, but if the line width is made narrower, the loss will increase, making this impractical. This idea narrows the line width only at the crossover portion in order to minimize the increase in loss.

以上図を用いて詳細に説明したように、この考
案によれば高い周波数で使用可能なスパイラルイ
ンダクタを提供することができ実用上有効であ
る。
As described above in detail using the figures, this invention can provide a spiral inductor that can be used at high frequencies and is practically effective.

なお実施例の図面には角形スパイラルインダク
タを用いたが、この考案が円形スパイラルインダ
クタにも適用可能なことは言うまでもない。
Although a rectangular spiral inductor is used in the drawings of the embodiment, it goes without saying that this invention can also be applied to a circular spiral inductor.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のスパイラルインダクタの導体膜
の形状を示す図で、1は導体膜である。第2図は
第1図のクロスオーバ部分A−A′の断面図であ
り11は誘電体基板、12は第1層導体、13は
層間絶縁膜、14は第2層導体である。 第3図はスパイラルインダクタの周波数特性を
示すグラフで、横軸は周波数、縦軸はインダクタ
ンスであり、点線22の特性は理想的なインダク
タ実線21は実際の特性である。 第4図はこの考案によるスパイラルインダクタ
の一実施例の導体膜の形状を示す図であり、31
は導体膜、32はクロスオーバ部分である。
FIG. 1 is a diagram showing the shape of a conductor film of a conventional spiral inductor, and 1 is a conductor film. FIG. 2 is a sectional view of the crossover portion A-A' in FIG. 1, in which 11 is a dielectric substrate, 12 is a first layer conductor, 13 is an interlayer insulating film, and 14 is a second layer conductor. FIG. 3 is a graph showing the frequency characteristics of a spiral inductor, where the horizontal axis is the frequency and the vertical axis is the inductance.The dotted line 22 represents the ideal characteristic, and the solid line 21 represents the actual characteristic. FIG. 4 is a diagram showing the shape of the conductor film of an embodiment of the spiral inductor according to this invention, and is 31
3 is a conductor film, and 32 is a crossover portion.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 高抵抗基板、半絶縁性基板あるいは絶縁性基板
上に導体膜をスパイラル状に形成したインダクタ
において、クロスオーバ部分の導体線路幅を他の
部分の導体線路幅より狭くしたことを特徴とする
スパイラルインダクタ。
A spiral inductor in which a conductor film is formed in a spiral shape on a high-resistance substrate, a semi-insulating substrate, or an insulating substrate, characterized in that the conductor line width at the crossover portion is narrower than the conductor line width at other portions. .
JP15120581U 1981-10-12 1981-10-12 spiral inductor Granted JPS5856416U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15120581U JPS5856416U (en) 1981-10-12 1981-10-12 spiral inductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15120581U JPS5856416U (en) 1981-10-12 1981-10-12 spiral inductor

Publications (2)

Publication Number Publication Date
JPS5856416U JPS5856416U (en) 1983-04-16
JPS6125220Y2 true JPS6125220Y2 (en) 1986-07-29

Family

ID=29943897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15120581U Granted JPS5856416U (en) 1981-10-12 1981-10-12 spiral inductor

Country Status (1)

Country Link
JP (1) JPS5856416U (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6380345U (en) * 1986-11-17 1988-05-27

Also Published As

Publication number Publication date
JPS5856416U (en) 1983-04-16

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