JPS61172329A - Temperature controller of developer - Google Patents
Temperature controller of developerInfo
- Publication number
- JPS61172329A JPS61172329A JP1382385A JP1382385A JPS61172329A JP S61172329 A JPS61172329 A JP S61172329A JP 1382385 A JP1382385 A JP 1382385A JP 1382385 A JP1382385 A JP 1382385A JP S61172329 A JPS61172329 A JP S61172329A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- semiconductor substrate
- developer
- spin chuck
- resin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000011347 resin Substances 0.000 claims abstract description 20
- 229920005989 resin Polymers 0.000 claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract 2
- 238000005507 spraying Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体製造装置における感光性樹脂膜の現
像液の温度制御を行なう温度制御装置に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a temperature control device for controlling the temperature of a developer for a photosensitive resin film in semiconductor manufacturing equipment.
第２図は従来より使用されている現像液の温度制御装置
で、１はスピンモータ（図示せず）に固定されたスピン
チャック、２は真空吸着された半導体基板、３は半導体
基板２上に形成された感光性樹脂、４はポジ現像液、５
はポジ現像液４の温度制御器、６はポジ現像液４を噴出
する現像ノズル、７は表面張力により液盛りされたポジ
現像液、８は純水ノズルである。Fig. 2 shows a conventionally used developer temperature control device, in which 1 is a spin chuck fixed to a spin motor (not shown), 2 is a semiconductor substrate vacuum-adsorbed, and 3 is a device for controlling the temperature of a developing solution on the semiconductor substrate 2. Formed photosensitive resin, 4 positive developer, 5
Reference numeral denotes a temperature controller for the positive developer 4, 6 a developing nozzle for spouting the positive developer 4, 7 a positive developer which is pooled due to surface tension, and 8 a pure water nozzle.
次に動作について説明する。Next, the operation will be explained.
ポジ現像液４は温度制御器５によって温度コントロール
され、循環させられる。これによりポジ現像液４は一定
時間経過後に、一定温度に保たれる。該現像液４は現像
ノズル６によって所定のマスクが載置されている感光性
樹脂被膜３上に液盛りされ、これに光が照射され、一定
時間抜必要部分が感光する。よって所定の感光性樹脂パ
ターンが形成される。この液盛り状態で、スピンチャッ
ク１を３００〜５００ｒ、ｐ、＋ｓ、で回転させながら
、ノズル８によって純水を噴出して、感光性樹脂膜３並
びに現像が終了して露出した半導体基板２を水洗して現
像液７を洗い流す、純水噴出を停止してから、スピンチ
ー？７り１の回転を３０００〜５０００ｒ、ｐ、ｍ。The temperature of the positive developer 4 is controlled by a temperature controller 5, and the temperature of the positive developer 4 is controlled and circulated. As a result, the positive developer 4 is maintained at a constant temperature after a certain period of time has elapsed. The developing solution 4 is deposited by a developing nozzle 6 onto the photosensitive resin coating 3 on which a predetermined mask is placed, and is irradiated with light to expose the areas that need to be removed for a certain period of time. A predetermined photosensitive resin pattern is thus formed. While rotating the spin chuck 1 at 300 to 500 r, p, +s in this state, pure water is jetted out from the nozzle 8 to remove the photosensitive resin film 3 and the exposed semiconductor substrate 2 after development. Rinse with water to wash away the developer 7, stop the pure water jet, and then spin-chi? Rotate 7ri1 from 3000 to 5000 r, p, m.
に上昇させて純水を切って乾燥させる。Remove pure water and dry.
しかるに従来のこのような温度制御装置は温度調整され
たポジ現像液が感光性樹脂上に液盛りされるまでに、配
管等を通ることによって外部温度の影響を受ける。さら
に感光性樹脂上に液盛りされたポジ現像液も水分の蒸発
等によって、温度変化が激しく、このポジ現像液の温度
低下によってポジ現像速度の不均一性が生じるという問
題点があった。However, in such a conventional temperature control device, the temperature-adjusted positive developer is influenced by the external temperature because it passes through piping and the like before it is deposited on the photosensitive resin. Furthermore, the temperature of the positive developer layered on the photosensitive resin changes drastically due to evaporation of water, etc., and the drop in temperature of the positive developer causes non-uniformity in the positive development speed.
この発明はこのような問題点を解決するためになされた
もので、ポジ現像液が半導体基板に液盛りされてから、
これを直接温度制御できる現像液の温度制御装置を提供
することを目的とする。This invention was made to solve these problems, and after the positive developer is deposited on the semiconductor substrate,
It is an object of the present invention to provide a temperature control device for a developer that can directly control the temperature.
この発明に係る現像液の温度制御装置は、半導体基板を
載置する回転自在のスピンチャック内に、半導体基板を
一定温度に加熱する温度制御器を設けたものである。A developer temperature control device according to the present invention includes a rotatable spin chuck on which a semiconductor substrate is placed, and a temperature controller for heating the semiconductor substrate to a constant temperature.
この発明における現像液の温度制御装置では、スピンチ
ャック内の温度制御器により、ポジ現像液が半導体基板
に液盛りされてから該半導体基板及びポジ現像液が温度
制御される。In the developer temperature control device according to the present invention, the temperature controller in the spin chuck controls the temperature of the semiconductor substrate and the positive developer after the positive developer is deposited on the semiconductor substrate.
以下、この発明の一実施例を図について説明する。第１
図において、２は真空吸着された半導体基板、３は半導
体基板２上に形成された現像すべき感光性樹脂膜、７は
表面張力によって液盛りされたポジ現像液、６は現像液
ノズル、８は純水ノズル、１は半導体基板２を載置する
回転自在のスピンチャック、５はスピンチャック１内に
設けられ、半導体基板２を一定温度に加熱する温度制御
器である。An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, 2 is a vacuum-adsorbed semiconductor substrate, 3 is a photosensitive resin film to be developed formed on the semiconductor substrate 2, 7 is a positive developing solution that is pumped up by surface tension, 6 is a developing solution nozzle, and 8 1 is a pure water nozzle, 1 is a rotatable spin chuck on which the semiconductor substrate 2 is placed, and 5 is a temperature controller provided in the spin chuck 1 to heat the semiconductor substrate 2 to a constant temperature.
次に動作について説明する。Next, the operation will be explained.
半導体基板２がスピンチャック１に真空吸着されると、
該スピンチャック１は温度制御器５によって温度制御さ
れているため、その熱が半導体基板２に伝わる。次に現
像液ノズル６より温度制御されていないポジ現像液が、
現像スプレーあるいは現像ノズル６によって液盛りされ
る。液盛りされるとポジ現像液７が半導体基板２の熱を
吸収して、これにより該ポジ現像液７が温度１ｉ１Ｊ御
されるようになる。そして一定時間この状態におき、感
光性樹脂膜３を現像する。一定時間経過して感光性樹脂
膜３が現像された後、スピンチャックｌを３００〜５０
０ｒ、ｐｏｍ、で回転させながら、ノズル８から純水を
噴出して感光性樹脂ＩＩ！ｌＩ３並びに現像が終了して
露出された半導体基板２を水洗して現像液を洗い流す。When the semiconductor substrate 2 is vacuum-adsorbed on the spin chuck 1,
Since the temperature of the spin chuck 1 is controlled by the temperature controller 5, the heat is transferred to the semiconductor substrate 2. Next, a positive developer whose temperature is not controlled is supplied from the developer nozzle 6.
The liquid is deposited by a developing spray or a developing nozzle 6. When the liquid is filled up, the positive developer 7 absorbs the heat of the semiconductor substrate 2, so that the temperature of the positive developer 7 is controlled by 1i1J. The photosensitive resin film 3 is then developed while remaining in this state for a certain period of time. After the photosensitive resin film 3 has been developed after a certain period of time has passed, the spin chuck l is
While rotating at 0r and pom, pure water is spouted from the nozzle 8 and the photosensitive resin II! II3 and the exposed semiconductor substrate 2 after the development are washed with water to wash away the developer.
現像液が洗い流されたら純水の供給をとめ、スピンチャ
ック１の回転を３０００〜５０００ｒ。After the developer has been washed away, the supply of pure water is stopped, and the spin chuck 1 is rotated at 3000 to 5000 rpm.
ｐ、ｆｆｉ、に上昇させて、純水を切って乾燥させる。Raise the temperature to p, ffi, remove the pure water, and dry.
このようにして所定の感光性樹脂パターンが得られる。In this way, a predetermined photosensitive resin pattern is obtained.
このような本装置では、従来のポジ現像液循環槽がなく
なって大幅な小型化を実現でき、また外部配管や雰囲気
に影響されず、温度制御の精度を向上できる。In this type of apparatus, the conventional positive developer circulation tank is eliminated, making it possible to achieve significant downsizing, and the accuracy of temperature control can be improved without being affected by external piping or atmosphere.
なお、上記実施例では本発明を半導体製造装置に適用し
た例を示したが、本発明は正確な温度制御が必要な写真
製版装置に適用することもできる。In addition, although the above embodiment shows an example in which the present invention is applied to a semiconductor manufacturing apparatus, the present invention can also be applied to a photolithography apparatus that requires accurate temperature control.
また、本発明はベーキング装置にも適用でき、以下にベ
ーキング装置に適用した場合の動作について説明する。Further, the present invention can also be applied to a baking device, and the operation when applied to a baking device will be described below.
この場合も装置の構成は上記実施例と全く同じであり、
第１図において、温度制御器付きスピンチャック１上に
吸着された半導体基板２に感光性樹脂を滴下し、スピン
チャック１を所定回転数で２０〜３０秒回転させて感光
性樹脂被膜を形成させる。その後スピンチャックｌの温
度を９０−１１０℃に昇温させ、１分間ベーキングする
。このようにしてこのベーキング装置においても前記実
施例と同様温度制御を外部の影響を小さくして正確に行
ないうる。In this case as well, the configuration of the device is exactly the same as in the above embodiment,
In FIG. 1, a photosensitive resin is dropped onto a semiconductor substrate 2 adsorbed on a spin chuck 1 with a temperature controller, and the spin chuck 1 is rotated at a predetermined rotational speed for 20 to 30 seconds to form a photosensitive resin film. . Thereafter, the temperature of the spin chuck 1 is raised to 90-110° C. and baked for 1 minute. In this way, in this baking apparatus as well, temperature control can be performed accurately with less external influences, as in the previous embodiment.
以上のようにこの発明によれば、スピンチャック内に温
度制御器を設け、半導体基板及びポジ現像液を直接温度
制御するようにしたので、従来のポジ現像液循環槽がな
くなって大幅な小型化を実現でき、また外部配管や雰囲
気に影響されず温度制御の精度を向上できる効果がある
。As described above, according to the present invention, a temperature controller is provided in the spin chuck to directly control the temperature of the semiconductor substrate and the positive developer, which eliminates the conventional positive developer circulation tank, resulting in significant downsizing. This also has the effect of improving the accuracy of temperature control without being affected by external piping or the atmosphere.
第１図はこの発明の一実施例による現像液の温度制御装
置の構成を示す図、第２図は従来の温度制御装置の構成
を示す図である。
１・・・スピンチャック、２・・・半導体基板、３・・
・感光性樹脂膜、５・・・温度制御器、６・・・現像ノ
ズル、７・・・ポジ現像液、８・・・純水ノズル。
なお図中、同一符号は同−又は相当部分を示す。FIG. 1 is a diagram showing the configuration of a developer temperature control device according to an embodiment of the present invention, and FIG. 2 is a diagram showing the configuration of a conventional temperature control device. 1... Spin chuck, 2... Semiconductor substrate, 3...
- Photosensitive resin film, 5... Temperature controller, 6... Developing nozzle, 7... Positive developer, 8... Pure water nozzle. In the drawings, the same reference numerals indicate the same or equivalent parts.
Claims (1)
制御を行なう装置であって、その上に感光性樹脂膜が形
成され、さらにその上に現像液が液盛りされる半導体基
板を載置するための、回転自在に設けられたスピンチャ
ックと、該スピンチャック内に設けられ上記半導体基板
を一定温度に加熱する温度制御器とを備えたことを特徴
とする現像液の温度制御装置。(1) A device for controlling the temperature of a developer for a photosensitive resin film during the manufacture of semiconductors, on which a photosensitive resin film is formed and a semiconductor substrate on which a developer is deposited is mounted. 1. A temperature control device for a developer, comprising: a rotatably provided spin chuck for placing the semiconductor substrate; and a temperature controller provided within the spin chuck and heating the semiconductor substrate to a constant temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1382385A JPS61172329A (en) | 1985-01-28 | 1985-01-28 | Temperature controller of developer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1382385A JPS61172329A (en) | 1985-01-28 | 1985-01-28 | Temperature controller of developer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61172329A true JPS61172329A (en) | 1986-08-04 |
Family
ID=11843991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1382385A Pending JPS61172329A (en) | 1985-01-28 | 1985-01-28 | Temperature controller of developer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61172329A (en) |
-
1985
- 1985-01-28 JP JP1382385A patent/JPS61172329A/en active Pending
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