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JPS5795899A - Correcting method for deformed sapphire single crystal sheet - Google Patents

Correcting method for deformed sapphire single crystal sheet

Info

Publication number
JPS5795899A
JPS5795899A JP17366980A JP17366980A JPS5795899A JP S5795899 A JPS5795899 A JP S5795899A JP 17366980 A JP17366980 A JP 17366980A JP 17366980 A JP17366980 A JP 17366980A JP S5795899 A JPS5795899 A JP S5795899A
Authority
JP
Japan
Prior art keywords
single crystal
sapphire single
sheet
crystal sheet
deformed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17366980A
Other languages
Japanese (ja)
Inventor
Shoichi Takahashi
Kenichi Masukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP17366980A priority Critical patent/JPS5795899A/en
Publication of JPS5795899A publication Critical patent/JPS5795899A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To make a warped sapphire single crystal sheet applicable to the fields of electronic and optical industries, etc. by remarkably correcting the sheet by heat treatment at a specified temp.
CONSTITUTION: A sapphire single crystal is cut, ground, and further subjected to surface working such as lapping or polishing as required. The resulting sapphire single crystal sheet is heat treated at 1,150W1,400°C. Thus, sapphire single crystal sheets with high accuracy in planeness, parallelism, thickness, crystal orientation, etc. can be manufactured easily in a short time in a high yield, and the sheets can be used as a substrate for SOS, a window plate for ultraviolet rays, etc.
COPYRIGHT: (C)1982,JPO&Japio
JP17366980A 1980-12-09 1980-12-09 Correcting method for deformed sapphire single crystal sheet Pending JPS5795899A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17366980A JPS5795899A (en) 1980-12-09 1980-12-09 Correcting method for deformed sapphire single crystal sheet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17366980A JPS5795899A (en) 1980-12-09 1980-12-09 Correcting method for deformed sapphire single crystal sheet

Publications (1)

Publication Number Publication Date
JPS5795899A true JPS5795899A (en) 1982-06-14

Family

ID=15964898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17366980A Pending JPS5795899A (en) 1980-12-09 1980-12-09 Correcting method for deformed sapphire single crystal sheet

Country Status (1)

Country Link
JP (1) JPS5795899A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004256388A (en) * 2003-02-18 2004-09-16 Carl-Zeiss-Stiftung Method for growing hexagonal single crystal and use of the same as substrate of semiconductor element
JP2005093519A (en) * 2003-09-12 2005-04-07 Shikusuon:Kk Method for manufacturing silicon carbide substrate and silicon carbide substrate
JP2005314216A (en) * 2004-03-03 2005-11-10 Schott Ag Method for manufacturing substrate wafer for low-defect semiconductor component, component obtained by the same, and its use
US7348076B2 (en) * 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
JP2009051678A (en) * 2007-08-24 2009-03-12 Sumitomo Metal Mining Co Ltd Manufacturing method of sapphire substrate
US7584689B2 (en) 2005-06-10 2009-09-08 Saint-Gobain Ceramics & Plastics, Inc. Transparent ceramic composite armor
JP2010514581A (en) * 2006-12-28 2010-05-06 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド Sapphire substrate and manufacturing method thereof
US8455879B2 (en) 2006-12-28 2013-06-04 Saint-Gobain Ceramics & Plastics, Inc. Sapphire substrates and methods of making same
US8652658B2 (en) 2006-09-22 2014-02-18 Saint-Gobain Ceramics & Plastics, Inc. C-plane sapphire method and apparatus
US8740670B2 (en) 2006-12-28 2014-06-03 Saint-Gobain Ceramics & Plastics, Inc. Sapphire substrates and methods of making same
EP2754739A1 (en) * 2013-01-10 2014-07-16 Apple Inc. Sapphire component with residual compressive stress
US9828668B2 (en) 2013-02-12 2017-11-28 Apple Inc. Multi-step ion implantation
US10280504B2 (en) 2015-09-25 2019-05-07 Apple Inc. Ion-implanted, anti-reflective layer formed within sapphire material
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure
CN114040898A (en) * 2019-05-17 2022-02-11 康宁公司 Glass sheet with copper film and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244563A (en) * 1975-10-07 1977-04-07 Fujitsu Ltd Method of treating sapphire substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244563A (en) * 1975-10-07 1977-04-07 Fujitsu Ltd Method of treating sapphire substrate

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004256388A (en) * 2003-02-18 2004-09-16 Carl-Zeiss-Stiftung Method for growing hexagonal single crystal and use of the same as substrate of semiconductor element
JP2005093519A (en) * 2003-09-12 2005-04-07 Shikusuon:Kk Method for manufacturing silicon carbide substrate and silicon carbide substrate
JP4661039B2 (en) * 2003-09-12 2011-03-30 住友電気工業株式会社 Method for manufacturing silicon carbide substrate
JP2005314216A (en) * 2004-03-03 2005-11-10 Schott Ag Method for manufacturing substrate wafer for low-defect semiconductor component, component obtained by the same, and its use
US7348076B2 (en) * 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
US9963800B2 (en) 2004-04-08 2018-05-08 Saint-Gobain Ceramics & Plastics, Inc. Method of making a sapphire component including machining a sapphire single crystal
US8157913B2 (en) 2004-04-08 2012-04-17 Saint-Gobain Ceramics & Plastics, Inc. Method of forming a sapphire single crystal
USRE43469E1 (en) 2004-04-08 2012-06-12 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
US9926645B2 (en) 2004-04-08 2018-03-27 Saint-Gobain Ceramics & Plastics, Inc. Method of forming a single crystal sheet using a die having a thermal gradient along its length
US8685161B2 (en) 2004-04-08 2014-04-01 Saint-Gobain Ceramics & Plastics, Inc. Method of forming a sapphire crystal using a melt fixture including thermal shields having a stepped configuration
US7584689B2 (en) 2005-06-10 2009-09-08 Saint-Gobain Ceramics & Plastics, Inc. Transparent ceramic composite armor
US7793580B2 (en) 2005-06-10 2010-09-14 Saint-Gobain Ceramics & Plastics, Inc. Transparent ceramic composite
US8025004B2 (en) 2005-06-10 2011-09-27 Saint-Gobain Ceramics & Plastics, Inc. Transparent ceramic composite
US8297168B2 (en) 2005-06-10 2012-10-30 Saint-Gobain Ceramics & Plastics, Inc. Transparent ceramic composite
US8652658B2 (en) 2006-09-22 2014-02-18 Saint-Gobain Ceramics & Plastics, Inc. C-plane sapphire method and apparatus
JP2010514581A (en) * 2006-12-28 2010-05-06 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド Sapphire substrate and manufacturing method thereof
US8455879B2 (en) 2006-12-28 2013-06-04 Saint-Gobain Ceramics & Plastics, Inc. Sapphire substrates and methods of making same
US8740670B2 (en) 2006-12-28 2014-06-03 Saint-Gobain Ceramics & Plastics, Inc. Sapphire substrates and methods of making same
US9464365B2 (en) 2006-12-28 2016-10-11 Saint-Gobain Ceramics & Plastics, Inc. Sapphire substrate
JP2012250344A (en) * 2006-12-28 2012-12-20 Saint-Gobain Ceramics & Plastics Inc Sapphire substrates, and methods of making same
JP2009051678A (en) * 2007-08-24 2009-03-12 Sumitomo Metal Mining Co Ltd Manufacturing method of sapphire substrate
EP2754739A1 (en) * 2013-01-10 2014-07-16 Apple Inc. Sapphire component with residual compressive stress
US9623628B2 (en) 2013-01-10 2017-04-18 Apple Inc. Sapphire component with residual compressive stress
US9828668B2 (en) 2013-02-12 2017-11-28 Apple Inc. Multi-step ion implantation
US10280504B2 (en) 2015-09-25 2019-05-07 Apple Inc. Ion-implanted, anti-reflective layer formed within sapphire material
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure
CN114040898A (en) * 2019-05-17 2022-02-11 康宁公司 Glass sheet with copper film and manufacturing method thereof

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