JPS57144550A - Blank plate for photomask - Google Patents
Blank plate for photomaskInfo
- Publication number
- JPS57144550A JPS57144550A JP2872281A JP2872281A JPS57144550A JP S57144550 A JPS57144550 A JP S57144550A JP 2872281 A JP2872281 A JP 2872281A JP 2872281 A JP2872281 A JP 2872281A JP S57144550 A JPS57144550 A JP S57144550A
- Authority
- JP
- Japan
- Prior art keywords
- film
- light shielding
- group
- conductive thin
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 abstract 6
- 239000010408 film Substances 0.000 abstract 5
- 230000007547 defect Effects 0.000 abstract 3
- 230000001681 protective effect Effects 0.000 abstract 3
- 239000010409 thin film Substances 0.000 abstract 3
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 abstract 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 abstract 2
- 229910052804 chromium Inorganic materials 0.000 abstract 2
- 230000005611 electricity Effects 0.000 abstract 2
- 230000003068 static effect Effects 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052715 tantalum Inorganic materials 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 abstract 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000007599 discharging Methods 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
PURPOSE:To obtain a blank material for photomasks which does not generate pattern defects, etc. owing to static electricity by forming a transparent conductive thin film, a transparent chemical resistant protective film and a light shielding protective film successively on a transparent substrate by using materials selected from respective specific material groups. CONSTITUTION:A transparent conductive thin film 2 of the material selected from the group consisting of Mo, Ta, Nb, Ti, Cr, V, W, Zr, Au, In2O3 and SnO2, a chemical resistant protective film 3 of the material selected from the group consisting of Al2O3, CaO, MgO, SiO2, CeO2 and TiO2, and a light shielding conductive thin film 4 of the material selected from the group consisting of Cr, CrO3, Si, Ta, Ta2O5 and Fe2O3 are laminated successively on a transparent substrate 1 of glass or the like, whereby a blank plate 5 for photomasks is produced. After a resist film 6 is frmed on this plate 5, it is etched by a dry etching method using a gas such as CF4, whereby a photomask 8 having a light shielding pattern 4 is formed without giving any defect to the film 2. This mask is used for the production of LSIs, etc., without generating defects in circuits, etc. owing to charging-discharging of static electricity and without damaging the mask by washing liquid during repeated use.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2872281A JPS57144550A (en) | 1981-02-28 | 1981-02-28 | Blank plate for photomask |
| EP81107702A EP0049799B1 (en) | 1980-10-09 | 1981-09-28 | Photomask blank and photomask |
| DE8181107702T DE3173769D1 (en) | 1980-10-09 | 1981-09-28 | Photomask blank and photomask |
| US06/318,201 US4440841A (en) | 1981-02-28 | 1981-11-04 | Photomask and photomask blank |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2872281A JPS57144550A (en) | 1981-02-28 | 1981-02-28 | Blank plate for photomask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57144550A true JPS57144550A (en) | 1982-09-07 |
| JPS6322299B2 JPS6322299B2 (en) | 1988-05-11 |
Family
ID=12256324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2872281A Granted JPS57144550A (en) | 1980-10-09 | 1981-02-28 | Blank plate for photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57144550A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57182741A (en) * | 1981-05-07 | 1982-11-10 | Dainippon Printing Co Ltd | Photomask blank plate |
| JPH032756A (en) * | 1989-05-30 | 1991-01-09 | Hoya Corp | Photomask blank and photomask |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4953039A (en) * | 1972-06-20 | 1974-05-23 | ||
| JPS5352073A (en) * | 1976-10-22 | 1978-05-12 | Hoya Denshi Kk | Photomask for ic |
| JPS5446479A (en) * | 1977-09-20 | 1979-04-12 | Mitsubishi Electric Corp | Negative plate for photo mask |
| JPS5451831A (en) * | 1977-09-30 | 1979-04-24 | Konishiroku Photo Ind Co Ltd | Photomask material |
-
1981
- 1981-02-28 JP JP2872281A patent/JPS57144550A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4953039A (en) * | 1972-06-20 | 1974-05-23 | ||
| JPS5352073A (en) * | 1976-10-22 | 1978-05-12 | Hoya Denshi Kk | Photomask for ic |
| JPS5446479A (en) * | 1977-09-20 | 1979-04-12 | Mitsubishi Electric Corp | Negative plate for photo mask |
| JPS5451831A (en) * | 1977-09-30 | 1979-04-24 | Konishiroku Photo Ind Co Ltd | Photomask material |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57182741A (en) * | 1981-05-07 | 1982-11-10 | Dainippon Printing Co Ltd | Photomask blank plate |
| JPS6322301B2 (en) * | 1981-05-07 | 1988-05-11 | Dainippon Printing Co Ltd | |
| JPH032756A (en) * | 1989-05-30 | 1991-01-09 | Hoya Corp | Photomask blank and photomask |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6322299B2 (en) | 1988-05-11 |
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