JPS56159898A - Read-only memory - Google Patents
Read-only memoryInfo
- Publication number
- JPS56159898A JPS56159898A JP6252980A JP6252980A JPS56159898A JP S56159898 A JPS56159898 A JP S56159898A JP 6252980 A JP6252980 A JP 6252980A JP 6252980 A JP6252980 A JP 6252980A JP S56159898 A JPS56159898 A JP S56159898A
- Authority
- JP
- Japan
- Prior art keywords
- vth1
- input
- level
- sense
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
Landscapes
- Read Only Memory (AREA)
Abstract
PURPOSE:To quicken the speed of sense output by placing a plurality of sense amplifiers in paralle. CONSTITUTION:A load transistor TR10 has been turned on by an input SG. Therefore, a bit output D0 is set to a level corresponding to a threshold level of the TR11 in an ROM array. And relative inputs C0-C2 of sense amplifiers 12-14 are made by load TRs 15-17 and level setting TRs 18-23. For instance, the input C0 is set in the middle of a VTH0 and a VTH1 by parallel connection of gate-drain shorts having threshold levels of the TR18 of the VTH0 and of the TR19 of the VTH1. Similarly, the input C1 is set between the VTH1 and a VTH2 and the C2 between the VTH2 and a VTH3, respectively, and the level of D0 is judged by the amplifiers 12-14. Gates 24-27 output parallel outputs D0 and D1 of 2 bits by decoding sense outputs S0-S2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55062529A JPS5939840B2 (en) | 1980-05-12 | 1980-05-12 | Read-only memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55062529A JPS5939840B2 (en) | 1980-05-12 | 1980-05-12 | Read-only memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56159898A true JPS56159898A (en) | 1981-12-09 |
JPS5939840B2 JPS5939840B2 (en) | 1984-09-26 |
Family
ID=13202803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55062529A Expired JPS5939840B2 (en) | 1980-05-12 | 1980-05-12 | Read-only memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5939840B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57143797A (en) * | 1981-01-28 | 1982-09-06 | Gen Instrument Corp | Read only memory |
JPS58500147A (en) * | 1981-02-25 | 1983-01-20 | モトロ−ラ・インコ−ポレ−テツド | A memory device having memory cells that can store two or more states |
JPS6010495A (en) * | 1983-06-30 | 1985-01-19 | Fujitsu Ltd | Sense amplifier |
JPS61129195U (en) * | 1985-01-30 | 1986-08-13 |
-
1980
- 1980-05-12 JP JP55062529A patent/JPS5939840B2/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57143797A (en) * | 1981-01-28 | 1982-09-06 | Gen Instrument Corp | Read only memory |
JPH0154800B2 (en) * | 1981-01-28 | 1989-11-21 | Gen Instrument Corp | |
JPS58500147A (en) * | 1981-02-25 | 1983-01-20 | モトロ−ラ・インコ−ポレ−テツド | A memory device having memory cells that can store two or more states |
JPS6010495A (en) * | 1983-06-30 | 1985-01-19 | Fujitsu Ltd | Sense amplifier |
JPS61129195U (en) * | 1985-01-30 | 1986-08-13 |
Also Published As
Publication number | Publication date |
---|---|
JPS5939840B2 (en) | 1984-09-26 |
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