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JPS56146226A - Method and device for manufacturing large area silicon article - Google Patents

Method and device for manufacturing large area silicon article

Info

Publication number
JPS56146226A
JPS56146226A JP3858781A JP3858781A JPS56146226A JP S56146226 A JPS56146226 A JP S56146226A JP 3858781 A JP3858781 A JP 3858781A JP 3858781 A JP3858781 A JP 3858781A JP S56146226 A JPS56146226 A JP S56146226A
Authority
JP
Japan
Prior art keywords
large area
manufacturing large
area silicon
silicon article
article
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3858781A
Other languages
Japanese (ja)
Inventor
Guraapumaiyaa Yoozefu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS56146226A publication Critical patent/JPS56146226A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP3858781A 1980-03-19 1981-03-17 Method and device for manufacturing large area silicon article Pending JPS56146226A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3010557A DE3010557C2 (en) 1980-03-19 1980-03-19 Method and device for manufacturing large-area silicon bodies for solar cells

Publications (1)

Publication Number Publication Date
JPS56146226A true JPS56146226A (en) 1981-11-13

Family

ID=6097681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3858781A Pending JPS56146226A (en) 1980-03-19 1981-03-17 Method and device for manufacturing large area silicon article

Country Status (2)

Country Link
JP (1) JPS56146226A (en)
DE (1) DE3010557C2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60234316A (en) * 1984-04-09 1985-11-21 シーメンス、アクチエンゲゼルシヤフト Method for producing silicon crystal for solar cells
JPH06283734A (en) * 1993-03-29 1994-10-07 Tdk Corp Polycrystalline silicon solar cell and its manufacture

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3209548A1 (en) * 1982-03-16 1983-10-20 Siemens AG, 1000 Berlin und 8000 München Solar cell arrangement in thin-layer construction made from semiconductor material, and process for the fabrication thereof
DE3210492A1 (en) * 1982-03-22 1983-09-29 Siemens AG, 1000 Berlin und 8000 München Method of producing large-area modular silicon bodies
DE3210403A1 (en) * 1982-03-22 1983-09-22 Siemens AG, 1000 Berlin und 8000 München Method of producing large-area modular silicon bodies
DE3217686A1 (en) * 1982-05-11 1983-11-17 Siemens AG, 1000 Berlin und 8000 München Apparatus for producing large-area strip-type silicon bodies for solar cells
DE3226931A1 (en) * 1982-07-19 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Process and equipment for producing large-area band-shaped silicon bodies for use in the manufacture of solar cells
DE3231268A1 (en) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München METHOD AND DEVICE FOR ASYMMETRICALLY COATING A BAND-SHAPED CARRIER BODY WITH SILICON FOR THE PROCESSING OF SOLAR CELLS
DE3231267A1 (en) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München METHOD AND DEVICE FOR ASYMMETRICALLY COATING A BAND-SHAPED CARRIER BODY WITH SILICON FOR THE PROCESSING OF SOLAR CELLS
DE3231326A1 (en) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München DEVICE FOR PRODUCING LARGE-SCALE, BAND-SHAPED SILICON BODIES FOR SOLAR CELLS
DE3240245A1 (en) * 1982-10-29 1984-05-03 Siemens AG, 1000 Berlin und 8000 München DEVICE FOR PRODUCING TAPE-SHAPED SILICON BODIES FOR SOLAR CELLS
DE3247532A1 (en) * 1982-12-22 1984-06-28 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING LARGE-SIDED SILICONE BODIES SUBSTRATES MADE FROM CARBON-COATED SILICON DIOXIDE FABRIC
DE3305933A1 (en) * 1983-02-21 1984-08-23 Siemens AG, 1000 Berlin und 8000 München Method and apparatus for producing polycrystalline, large surface-area silicon crystal bodies for solar cells
DE3306135A1 (en) * 1983-02-22 1984-08-23 Siemens AG, 1000 Berlin und 8000 München Method and apparatus for producing polycrystalline, large surface-area silicon crystal bodies for solar cells
DE3404818A1 (en) * 1984-02-10 1985-08-14 Siemens AG, 1000 Berlin und 8000 München Device for producing a pn junction in a silicon strip produced according to the continuous process
EP0158181B1 (en) * 1984-04-09 1987-09-16 Siemens Aktiengesellschaft Process for producing large-surface silicon crystal bodies for solar cells
DE3736341A1 (en) * 1987-10-27 1989-05-11 Siemens Ag METHOD FOR PRODUCING BAND-SHAPED SILICON CRYSTALS BY HORIZONTAL DRAWING FROM THE MELT

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2850805C2 (en) * 1978-11-23 1986-08-28 Siemens AG, 1000 Berlin und 8000 München Process for the production of disk-shaped or ribbon-shaped silicon crystals with a columnar structure for solar cells

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60234316A (en) * 1984-04-09 1985-11-21 シーメンス、アクチエンゲゼルシヤフト Method for producing silicon crystal for solar cells
JPH0582751B2 (en) * 1984-04-09 1993-11-22 Siemens Ag
JPH06283734A (en) * 1993-03-29 1994-10-07 Tdk Corp Polycrystalline silicon solar cell and its manufacture

Also Published As

Publication number Publication date
DE3010557C2 (en) 1986-08-21
DE3010557A1 (en) 1981-09-24

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