JPS54141580A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54141580A JPS54141580A JP4950078A JP4950078A JPS54141580A JP S54141580 A JPS54141580 A JP S54141580A JP 4950078 A JP4950078 A JP 4950078A JP 4950078 A JP4950078 A JP 4950078A JP S54141580 A JPS54141580 A JP S54141580A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate
- type
- poly
- fets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
Landscapes
- Amplifiers (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To protect the gate insulation film of IGFETs of extremely low gate dielectric strength by separately providing protection diodes of dielectric strength lower than that of channel stoppers. CONSTITUTION:A FET 5 by N layers 2, 3 and N type poly-Si gate 4 and a FET 9 of N layers 6, 7 and N type poly-Si gate 8 are formed on a P type Si substrate 1. The gate 4 is connected to an Al terminal 12 through poly-si wiring 10 and N type resistance layer 11. The N layer 2 is grounded through the Al 13 the N layer 7 connects to power source VDD and the gate 8 and N layer 6 to the N layer 3. The substrate surface and FETs are covered with oxide films 14, 15. P<+> channel stoppers 16 are provided on the substrate surface of the field portions excluding the FETs 5, 9. A P<++> layer 17 is provided in contact with an N type input protecting resistance layer 11. The provision of this layer 17 enables gate protection effect to be made extremely high without degrading the speed and threshold value of the circuits of MOSFETs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4950078A JPS54141580A (en) | 1978-04-25 | 1978-04-25 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4950078A JPS54141580A (en) | 1978-04-25 | 1978-04-25 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54141580A true JPS54141580A (en) | 1979-11-02 |
Family
ID=12832854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4950078A Pending JPS54141580A (en) | 1978-04-25 | 1978-04-25 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54141580A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6057659A (en) * | 1983-09-09 | 1985-04-03 | Hitachi Ltd | Semiconductor integrated circuit device |
| JP2015115608A (en) * | 2013-12-09 | 2015-06-22 | インターナショナル・レクティファイアー・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｒｅｃｔｉｆｉｅｒ Ｃｏｒｐｏｒａｔｉｏｎ | Normally-off composite power devices and monolithically integrated normally-off composite power devices |
-
1978
- 1978-04-25 JP JP4950078A patent/JPS54141580A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6057659A (en) * | 1983-09-09 | 1985-04-03 | Hitachi Ltd | Semiconductor integrated circuit device |
| JPH0478017B2 (en) * | 1983-09-09 | 1992-12-10 | Hitachi Ltd | |
| JP2015115608A (en) * | 2013-12-09 | 2015-06-22 | インターナショナル・レクティファイアー・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｒｅｃｔｉｆｉｅｒ Ｃｏｒｐｏｒａｔｉｏｎ | Normally-off composite power devices and monolithically integrated normally-off composite power devices |
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