[go: up one dir, main page]

JPS53148993A - Semiconductor photoelectric conversion element - Google Patents

Semiconductor photoelectric conversion element

Info

Publication number
JPS53148993A
JPS53148993A JP6320077A JP6320077A JPS53148993A JP S53148993 A JPS53148993 A JP S53148993A JP 6320077 A JP6320077 A JP 6320077A JP 6320077 A JP6320077 A JP 6320077A JP S53148993 A JPS53148993 A JP S53148993A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
conversion element
semiconductor photoelectric
accelerates
cation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6320077A
Other languages
Japanese (ja)
Other versions
JPS617758B2 (en
Inventor
Yasuo Igawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6320077A priority Critical patent/JPS53148993A/en
Publication of JPS53148993A publication Critical patent/JPS53148993A/en
Publication of JPS617758B2 publication Critical patent/JPS617758B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To increase the photoelectric conversion efficiency by containing Na to be the cation in the SiO2 reflection preventing film which is formed on the surface of the photoelectric conversion element and then generating the incorporated electric field which accelerates the minor carrier toward the PN junction.
COPYRIGHT: (C)1978,JPO&Japio
JP6320077A 1977-06-01 1977-06-01 Semiconductor photoelectric conversion element Granted JPS53148993A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6320077A JPS53148993A (en) 1977-06-01 1977-06-01 Semiconductor photoelectric conversion element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6320077A JPS53148993A (en) 1977-06-01 1977-06-01 Semiconductor photoelectric conversion element

Publications (2)

Publication Number Publication Date
JPS53148993A true JPS53148993A (en) 1978-12-26
JPS617758B2 JPS617758B2 (en) 1986-03-08

Family

ID=13222326

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6320077A Granted JPS53148993A (en) 1977-06-01 1977-06-01 Semiconductor photoelectric conversion element

Country Status (1)

Country Link
JP (1) JPS53148993A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57190455A (en) * 1981-05-19 1982-11-24 Nippon Telegr & Teleph Corp <Ntt> Adhesion type image sensor
WO2022114026A1 (en) * 2020-11-30 2022-06-02 Ａｇｃ株式会社 Transparent electrode substrate and solar cell

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57190455A (en) * 1981-05-19 1982-11-24 Nippon Telegr & Teleph Corp <Ntt> Adhesion type image sensor
WO2022114026A1 (en) * 2020-11-30 2022-06-02 Ａｇｃ株式会社 Transparent electrode substrate and solar cell
JP7160232B1 (en) * 2020-11-30 2022-10-25 Ａｇｃ株式会社 Transparent electrode substrate and solar cell
CN115579406A (en) * 2020-11-30 2023-01-06 Ａｇｃ株式会社 Transparent electrode substrate and solar cell
CN115579406B (en) * 2020-11-30 2024-05-07 Ａｇｃ株式会社 Transparent electrode substrate and solar cell

Also Published As

Publication number Publication date
JPS617758B2 (en) 1986-03-08

Similar Documents

Publication Publication Date Title
JPS5421294A (en) Avalanche photo diode
JPS51113481A (en) Semiconductor device
JPS5356972A (en) Mesa type semiconductor device
JPS53148993A (en) Semiconductor photoelectric conversion element
JPS5236990A (en) Solar cell
JPS5257792A (en) Photoelectric converting element
JPS52120773A (en) Semiconductor element
JPS53136987A (en) Photo diode
JPS53121494A (en) Photo electric converter having sensitivity to light of long wave lenght
JPS547883A (en) Semiconductor device and its manufacture
JPS5415674A (en) Semiconductor device containing schottky barrier
JPS5269592A (en) Semiconductor luminescent element
JPS5279789A (en) Photo coupled semiconductor device
JPS52124888A (en) Production of solar battery
JPS5333086A (en) Gaas solar battery
JPS5376760A (en) Semiconductor rectifying device
JPS5267275A (en) Semiconductor unit
JPS5428566A (en) Manufacture of semiconductor device
JPS5244175A (en) Method of flat etching of silicon substrate
JPS51147986A (en) Semiconductor light emission device
JPS5438783A (en) Radiation electromotive force type battery
JPS5339073A (en) Semiconductor device
JPS5378796A (en) Solar battery
JPS5374890A (en) Solar battery watch
JPS5210686A (en) Sun cell for clock