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JPH10340846A - Aligner, its manufacture, exposing method and device manufacturing method - Google Patents

Aligner, its manufacture, exposing method and device manufacturing method

Info

Publication number
JPH10340846A
JPH10340846A JP9151985A JP15198597A JPH10340846A JP H10340846 A JPH10340846 A JP H10340846A JP 9151985 A JP9151985 A JP 9151985A JP 15198597 A JP15198597 A JP 15198597A JP H10340846 A JPH10340846 A JP H10340846A
Authority
JP
Japan
Prior art keywords
liquid
refractive index
optical system
projection optical
reticle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9151985A
Other languages
Japanese (ja)
Other versions
JP3817836B2 (en
Inventor
Taketo Kudo
威人 工藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP15198597A priority Critical patent/JP3817836B2/en
Publication of JPH10340846A publication Critical patent/JPH10340846A/en
Application granted granted Critical
Publication of JP3817836B2 publication Critical patent/JP3817836B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PROBLEM TO BE SOLVED: To enable continuous correction of imaging performance without vibration, by installing a refractive index adjusting means for adjusting the refractive index of liquid. SOLUTION: A refractive index adjusting means consists of the following; electrodes D1, ion exchange films 11, 12, bulkheads K1, K2, exhaust pipes H1, H2, a mixer K, an electromagnetic valve DV, an introducing pipe LD, a power source supply part and a second control part. The second control part sends a command to the power source supply part, and applies 8 specified voltage for a specified period across the two electrodes D1. From one electrode turning to an anode, oxygen gas is generated. From the other electrode turning to a cathode, mixed gas of hydrogen and chlorine is generated. Since the concentration of hydrogen chloride in liquid LQ is decreased, the refractive index of the liquid LQ is decreased. The second control part sends a command to the electromagnetic valve DV, in order to open the valve DV and add high concentration admixture aqueous solution to the liquid LQ. Thereby the refractive index of the liquid LQ is increased.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、レチクル上に設け
られたデバイスパターンのを感光性基板上に投影する投
影光学系を備えた露光装置及び該露光装置を用いた露光
方法並びにデバイス製造方法に関する。さらに詳しく
は、本発明は投影光学系と感光性基板との間の光路に液
体を充填した液浸型露光装置に関する。本発明は、半導
体素子、撮像素子(CCD等)、液晶表示素子、または
薄膜磁気ヘッド等を製造する際に好適なものである。
The present invention relates to an exposure apparatus having a projection optical system for projecting a device pattern provided on a reticle onto a photosensitive substrate, an exposure method using the exposure apparatus, and a device manufacturing method. . More specifically, the present invention relates to an immersion type exposure apparatus in which an optical path between a projection optical system and a photosensitive substrate is filled with a liquid. The present invention is suitable for manufacturing a semiconductor device, an imaging device (such as a CCD), a liquid crystal display device, or a thin-film magnetic head.

【0002】[0002]

【従来の技術】光学系の最終面と像面との間の空間を、
ワーキングディスタンスと言うが、従来の露光装置の投
影光学系ではワーキングディスタンスは空気で満たされ
ていた。ところで、ICやLSIを製造する過程に於い
てシリコンウエハに露光するパターンは、その微細化が
常に望まれていて、そのためには露光に用いる光の波長
を短くするか、あるいは像側の開口数を大きくする必要
がある。光の波長が短くなるにつれ、満足できる結像性
能を得つつ露光に満足な光量を確保できるだけの透過率
を持つガラス材料は少なくなってくる。
2. Description of the Related Art A space between a final surface of an optical system and an image surface is defined as:
Although it is called a working distance, the working distance is filled with air in a projection optical system of a conventional exposure apparatus. By the way, in the process of manufacturing an IC or an LSI, it is always desired to miniaturize a pattern to be exposed on a silicon wafer. To this end, it is necessary to shorten the wavelength of light used for exposure or to set a numerical aperture on the image side. Need to be larger. As the wavelength of light becomes shorter, the number of glass materials having a transmittance sufficient to secure a sufficient amount of light for exposure while obtaining satisfactory imaging performance decreases.

【0003】そこで像面までの最終媒質を、空気より屈
折率の大きい、液体にすることで像側の開口数を大きく
することが提案されていて、そのように液体を用いた投
影光学系を持つ露光装置は、液浸型露光装置と呼ばれて
いる。さて、露光装置においては、投影光学系の結像性
能を補正するために、投影光学系の最も物体側の光路或
いは最も像側の光路中に、結像性能を調整するための結
像性能補正部材を交換可能に設ける技術が知られてい
る。
[0003] Therefore, it has been proposed to increase the numerical aperture on the image side by making the final medium up to the image plane a liquid having a higher refractive index than air, thereby increasing the projection optical system using such a liquid. The exposure apparatus provided is called an immersion type exposure apparatus. Now, in the exposure apparatus, in order to correct the imaging performance of the projection optical system, an imaging performance correction for adjusting the imaging performance in the optical path closest to the object or the optical path closest to the image of the projection optical system. There is known a technique in which members are exchangeably provided.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、液浸型
露光装置では、投影光学系と感光性基板との間の光路
(ワーキングディスタンス)に液体を満たす構成である
ため、結像性能を補正するための部材を配置することが
困難である。また、このような結像性能補正部材は、有
限の数、現実的な装置の構成を考えると数個程度しか準
備することができないため、離散的にしか結像性能を補
正できない問題点がある。
However, in the immersion type exposure apparatus, since the optical path (working distance) between the projection optical system and the photosensitive substrate is filled with liquid, it is necessary to correct the imaging performance. Is difficult to dispose. In addition, since only a limited number of such imaging performance correcting members can be prepared in consideration of a finite number and a realistic device configuration, there is a problem that the imaging performance can be corrected only discretely. .

【0005】また、投影光学系の結像性能は所定の許容
範囲に収める必要があるが、上述のように結像性能の補
正が離散的にしかできなければ、この所定の許容範囲内
に収めることが困難となる。特に、露光パターンの微細
化や露光面積の増大が求められると、この結像性能の許
容範囲が狭くなり、また、レチクルと感光性基板とを走
査させつつ露光を行う走査露光方法を行う場合にも結像
性能特性の変動幅の許容範囲が狭くなっており、離散的
な補正では対応しきれない。
Further, the imaging performance of the projection optical system needs to be within a predetermined allowable range, but if the correction of the imaging performance can be performed only discretely as described above, it is within this predetermined allowable range. It becomes difficult. In particular, when the miniaturization of the exposure pattern and the increase of the exposure area are required, the allowable range of the imaging performance is narrowed, and when performing the scanning exposure method of performing the exposure while scanning the reticle and the photosensitive substrate. Also, the allowable range of the fluctuation width of the imaging performance characteristic is narrow, and discrete correction cannot cope with it.

【0006】また、上述のような結像性能補正部材の交
換時において、投影光学系自体の振動が発生するため、
結像性能へ悪影響が生じる恐れもある。そこで、本発明
は、連続的な結像性能の補正を振動を伴うことなく可能
とすることを第1の目的とする。また、本発明は、投影
光学系の開口数の増大と結像性能を補正することとの両
立を第2の目的とする。
Further, when the imaging performance correcting member is replaced as described above, the projection optical system itself vibrates.
The imaging performance may be adversely affected. Therefore, a first object of the present invention is to enable continuous correction of imaging performance without vibration. It is a second object of the present invention to achieve both the increase in the numerical aperture of the projection optical system and the correction of the imaging performance.

【0007】[0007]

【課題を解決するための手段】上述の第1の目的を達成
するために、本発明による露光装置は、レチクル上に設
けられたパターンを照明する照明光学系と、このパター
ンの像を感光性基板上に形成する投影光学系とを有し、
投影光学系と感光性基板との間の光路中の少なくとも一
部分に位置する液体を介して露光を行う露光装置であっ
て、液体の屈折率を調整するための屈折率調整手段を有
するものである。
In order to achieve the first object described above, an exposure apparatus according to the present invention comprises an illumination optical system for illuminating a pattern provided on a reticle, and an image of the pattern formed by a photosensitive element. A projection optical system formed on the substrate,
An exposure apparatus that performs exposure via a liquid located at least in a part of an optical path between a projection optical system and a photosensitive substrate, and has a refractive index adjusting unit for adjusting a refractive index of the liquid. .

【0008】ここで、上記請求項2に掲げた好ましい態
様によれば、屈折率調整手段は、前記投影光学系の結像
性能を補正するように液体の屈折率を調整するものであ
る。この構成に基づいて、請求項3に掲げた好ましい態
様によれば、投影光学系の結像性能を測定する結像性能
測定手段をさらに備えるものであり、屈折率調整手段
は、前記結像性能を補正するように液体の屈折率を調整
するものである。
Here, according to a preferred aspect of the present invention, the refractive index adjusting means adjusts the refractive index of the liquid so as to correct the imaging performance of the projection optical system. According to a preferred aspect of the present invention, based on this configuration, the apparatus further includes an imaging performance measuring unit that measures the imaging performance of the projection optical system, and the refractive index adjusting unit includes the imaging performance. Is to adjust the refractive index of the liquid so as to correct.

【0009】また、請求項4に掲げた好ましい態様によ
れば、投影光学系の結像性能の変動の要因の状態を検知
する変動要因検知手段をさらに備えるものであり、屈折
率調整手段は、要因の状態に応じて、結像性能を補正す
るように液体の屈折率を調整するものである。この構成
に基づいて、請求項5に掲げた好ましい態様によれば、
照明光学系は、前記レチクルに対する照明条件を変更可
能に構成され、変動要因検知手段は、照明条件の状態を
検知し、屈折率調整手段は、照明条件の変更に応じて、
結像性能を補正するように液体の屈折率を調整するもの
である。
According to a preferred aspect of the present invention, there is further provided a fluctuation factor detecting means for detecting a state of a factor of a fluctuation of the imaging performance of the projection optical system, wherein the refractive index adjusting means comprises: The refractive index of the liquid is adjusted so as to correct the imaging performance according to the state of the factor. Based on this configuration, according to a preferred aspect set forth in claim 5,
The illumination optical system is configured to be able to change the illumination condition with respect to the reticle, the variation factor detection means detects the state of the illumination condition, and the refractive index adjustment means according to the change in the illumination condition,
This is to adjust the refractive index of the liquid so as to correct the imaging performance.

【0010】そして、請求項6に掲げた好ましい態様に
よれば、変動要因検知手段は、レチクルの種類を判別す
るものであり、屈折率調整手段は、レチクルの種類に応
じて、結像性能を補正するように液体の屈折率を調整す
るものである。また、上述の第2の目的を達成するため
には、投影光学系と感光性基板との間の光路の全てを液
体で満たすことが好ましい。このとき、本発明による露
光装置は、投影光学系と感光性基板との間の光路を前記
液体で満たすための側壁と、液体を前記感光性基板ホル
ダーへ供給すると共に前記感光性基板ホルダーから回収
するための供給・回収ユニットとを備え、感光性基板を
保持する感光性基板ホルダーをさらに有することが好ま
しい。
According to a preferred aspect of the present invention, the fluctuation factor detecting means determines the type of the reticle, and the refractive index adjusting means adjusts the imaging performance according to the type of the reticle. This is to adjust the refractive index of the liquid so as to make correction. In order to achieve the second object, it is preferable that the entire optical path between the projection optical system and the photosensitive substrate be filled with liquid. At this time, the exposure apparatus according to the present invention includes a side wall for filling the optical path between the projection optical system and the photosensitive substrate with the liquid, and supplies the liquid to the photosensitive substrate holder and collects the liquid from the photosensitive substrate holder. It is preferable to further include a photosensitive substrate holder for holding the photosensitive substrate, which is provided with a supply / recovery unit for performing the operation.

【0011】また、屈折率調整手段は、液体に屈折率を
調整するための添加剤を供給する添加剤供給ユニット
と、液体から前記添加剤を回収するための添加剤回収ユ
ニットとを有することが好ましい。
[0011] The refractive index adjusting means may include an additive supply unit for supplying an additive for adjusting the refractive index to the liquid, and an additive recovery unit for recovering the additive from the liquid. preferable.

【0012】[0012]

【発明の実施の形態】上述の構成のごとき本発明におい
ては、投影光学系と感光性基板との間の光路中に位置す
る液体の屈折率を調整することができるため、この屈折
率の変化により投影光学系の結像性能を補正することが
できる。ここで、屈折率調整の手法としては、液体が多
物質の混合液体であるとすると、この混合液体の屈折率
nは、ローレンツ・ローレンス(Lorentz-Lorenz)の式
に従い、
DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention having the above-described structure, the refractive index of a liquid located in an optical path between a projection optical system and a photosensitive substrate can be adjusted. Thus, the imaging performance of the projection optical system can be corrected. Here, as a method of adjusting the refractive index, assuming that the liquid is a mixed liquid of multiple substances, the refractive index n of the mixed liquid is calculated according to the Lorentz-Lorenz equation.

【0013】[0013]

【数1】 (Equation 1)

【0014】となる。但し、## EQU1 ## However,

【0015】[0015]

【数2】 (Equation 2)

【0016】である。例えば液体を水溶液とすると、こ
の水溶液の屈折率が水溶液自体の濃度に応じて変化する
ため、水溶液へ添加する物質の濃度を増減させれば良
い。これにより、投影光学系の結像性能を補償できる屈
折率の値となるように、液体の屈折率を変化させれば、
投影光学系の結像性能は良好なものとなる。
## EQU1 ## For example, when the liquid is an aqueous solution, the refractive index of the aqueous solution changes according to the concentration of the aqueous solution itself, and thus the concentration of the substance added to the aqueous solution may be increased or decreased. With this, if the refractive index of the liquid is changed so that the refractive index value can compensate for the imaging performance of the projection optical system,
The imaging performance of the projection optical system is good.

【0017】ここで、屈折率の調整は、例えば投影光学
系の収差などの結像性能を測定し、その結果に応じて屈
折率を調整しても良く、投影光学系の結像性能の変動に
対応している要因の変動を検知して、その結果に応じて
屈折率を調整しても良い。前者の投影光学系の結像性能
を測定する手法においては、露光装置の製造時に投影光
学系の収差などを測定し、この収差を補償する屈折率の
値を液体の屈折率の初期値に設定しても良い。このよう
に製造時の調整の一部として屈折率を調整すれば、製造
・調整が容易となる利点がある。また、露光装置自体に
収差測定機構などを設けておき、この収差測定機構によ
る収差測定結果に応じて、液体の屈折率を変更しても良
い。
Here, the refractive index may be adjusted by, for example, measuring the imaging performance of the projection optical system, such as aberration, and adjusting the refractive index according to the result. May be detected, and the refractive index may be adjusted according to the result. In the former method of measuring the imaging performance of the projection optical system, the aberration of the projection optical system is measured at the time of manufacturing the exposure apparatus, and the value of the refractive index for compensating the aberration is set to the initial value of the refractive index of the liquid. You may. If the refractive index is adjusted as a part of the adjustment at the time of manufacturing as described above, there is an advantage that manufacturing and adjustment are facilitated. Further, an aberration measuring mechanism or the like may be provided in the exposure apparatus itself, and the refractive index of the liquid may be changed according to the aberration measurement result by the aberration measuring mechanism.

【0018】一方、後者の結像性能の変動に対応する要
因の変動としては、レチクルの種類、照明条件の状態、
投影光学系を通過する露光エネルギー量などが挙げられ
る。ここで、レチクルを照明する際の照明条件(σ値、
変形照明か否かなど)は、レチクル上に設けられるパタ
ーンの種類によって最適なものが決まり、この照明条件
が変わると、投影光学系の収差を初めとする結像性能が
変化する。そこで、例えばレチクルの種類、照明条件な
どの要因ごとに、この要因の変動に伴って変化する結像
性能を補償するための屈折率の値を予めメモリーなどに
記憶させておき、この要因の変動を検知し、記憶された
関係に基づいて液体の屈折率を調整すれば良い。また、
投影光学系を通過する露光エネルギー量の大小により投
影光学系の結像性能が変化する、いわゆる照射変動があ
るが、この場合においても、露光エネルギー量と、この
露光エネルギー量の大小によって変化する結像性能を補
償するための屈折率の値を予めメモリーなどに記憶させ
ておき、この要因の変動を検知し、記憶された関係に基
づいて液体の屈折率を調整すれば良い。なお、この手法
において、メモリーに記憶させる代わりに、所定の計算
式で算出しても良い。
On the other hand, fluctuations in factors corresponding to the latter fluctuations in imaging performance include the type of reticle, the state of illumination conditions,
The exposure energy amount that passes through the projection optical system is exemplified. Here, the illumination conditions (σ value,
The optimal illumination is determined depending on the type of pattern provided on the reticle, and when the illumination condition changes, the imaging performance including aberration of the projection optical system changes. Therefore, for example, for each factor such as the type of the reticle and the illumination condition, the value of the refractive index for compensating the imaging performance that changes with the variation of this factor is stored in a memory or the like in advance, and the variation of this factor is stored. May be detected, and the refractive index of the liquid may be adjusted based on the stored relationship. Also,
The imaging performance of the projection optical system changes according to the magnitude of the exposure energy passing through the projection optical system, that is, there is a so-called irradiation fluctuation. In this case, too, the exposure energy and the magnitude of the exposure energy vary. The value of the refractive index for compensating the image performance may be stored in a memory or the like in advance, a change in the factor may be detected, and the refractive index of the liquid may be adjusted based on the stored relationship. In this method, instead of storing the data in the memory, the data may be calculated by a predetermined calculation formula.

【0019】このように、液体の屈折率を調整すること
で、投影光学系の結像性能のうち、特に球面収差、像面
湾曲の補正に効果的である。以下、図面を参照して、本
発明にかかる実施の形態について説明する。 [第1の実施の形態]図1は、本発明にかかる第1の実
施の形態による露光装置を概略的に示す図である。尚、
図1では、XYZ座標系を採用している。
By adjusting the refractive index of the liquid in this way, it is effective to correct, among other things, spherical aberration and curvature of field in the imaging performance of the projection optical system. Hereinafter, embodiments of the present invention will be described with reference to the drawings. [First Embodiment] FIG. 1 schematically shows an exposure apparatus according to a first embodiment of the present invention. still,
In FIG. 1, an XYZ coordinate system is adopted.

【0020】図1において、光源Sは、例えば波長24
8nmの露光光を供給し、この光源Sからの露光光は、
照明光学系IL及び反射鏡Mを介してレチクルRをほぼ
均一な照度分布のもとで照明する。ここで、本例では光
源Sとして、KrFエキシマレーザ光源を用いている
が、その代わりに、193nmの露光光を供給するAr
Fエキシマレーザ光源やg線、i線等を供給する高圧水
銀ランプ等を用いても良い。また、図1では不図示では
あるが照明光学系ILは、面光源を形成するためのオプ
ティカルインテグレータと、この面光源からの光を集光
して被照射面を重畳的に均一照明するためのコンデンサ
光学系と、オプティカルインテグレータにより形成され
る面光源の位置に配置されて面光源の形状を可変にする
ための可変開口絞りとを有するものである。ここで、面
光源の形状としては、光軸から偏心した複数の面光源を
持つもの、輪帯形状のもの、円形状であってその大きさ
がことなるものなどがある。このような照明光学系IL
としては、例えば米国特許第5,329,094号公報
や米国特許第5,576,801号公報に開示されてい
るものを用いることができる。
In FIG. 1, a light source S has a wavelength of 24, for example.
8 nm exposure light is supplied, and the exposure light from the light source S is
The reticle R is illuminated through the illumination optical system IL and the reflecting mirror M under substantially uniform illumination distribution. Here, in this example, a KrF excimer laser light source is used as the light source S, but instead, an Ar that supplies exposure light of 193 nm is used.
An F excimer laser light source, a high-pressure mercury lamp for supplying g-line, i-line, or the like may be used. Although not shown in FIG. 1, the illumination optical system IL includes an optical integrator for forming a surface light source and a light for condensing light from the surface light source to uniformly illuminate the irradiated surface in a superimposed manner. It has a condenser optical system and a variable aperture stop arranged at the position of a surface light source formed by an optical integrator to change the shape of the surface light source. Here, as the shape of the surface light source, there are a shape having a plurality of surface light sources eccentric from the optical axis, an annular shape, a circular shape having a different size, and the like. Such an illumination optical system IL
For example, those disclosed in US Pat. No. 5,329,094 and US Pat. No. 5,576,801 can be used.

【0021】そして、レチクルRを通過・回折した露光
光は、投影光学系Tを経てウエハW上に達し、ウエハ上
には、レチクルRの像が形成される。ここで、レチクル
Rは、レチクルローダーRLによって保持され、レチク
ルローダーRLは任意の時にローダーテーブルLT上を
駆動装置T1により、X軸及びY軸上で任意の速度で移
動できるように構成されている。ここで、レチクルロー
ダーRLのローダーテーブルLT上での移動速度は、速
度センサ−SSで検知され、この速度センサーSSから
の出力は、第1制御部CPU1へ伝達される。
The exposure light that has passed and diffracted through the reticle R reaches the wafer W via the projection optical system T, and an image of the reticle R is formed on the wafer. Here, the reticle R is held by the reticle loader RL, and the reticle loader RL is configured to be able to move on the loader table LT at any time on the X axis and the Y axis at an arbitrary speed by the driving device T1. . Here, the moving speed of the reticle loader RL on the loader table LT is detected by the speed sensor SS, and an output from the speed sensor SS is transmitted to the first control unit CPU1.

【0022】また、ウエハWは、ウエハテーブルWTに
より保持されている。このウエハテーブルWTには、液
体LQを溜めるための側壁が設けられている。本例で
は、この側壁により、ウエハWから投影光学系Tまでの
光路の全てが液体LQで満たされる構成となっている。
このウエハテーブルWTは、駆動装置T2によりホルダ
ーテーブルHT上でX軸方向及びY軸方向に任意の速度
で移動できるように構成されている。
The wafer W is held by a wafer table WT. The wafer table WT is provided with a side wall for storing the liquid LQ. In this example, the side wall has a configuration in which the entire optical path from the wafer W to the projection optical system T is filled with the liquid LQ.
The wafer table WT is configured to be able to move at an arbitrary speed in the X-axis direction and the Y-axis direction on the holder table HT by the driving device T2.

【0023】ここで、上記の第1制御部CPU1は、レ
チクルローダーRLのローダーテーブルLT上での移動
速度と、投影光学系Tの露光倍率βとからウエハテーブ
ルWTのホルダーテーブル上での移動速度を算出し、駆
動装置T2へ伝達する。駆動装置は、第1制御部CPU
1から伝達された移動速度に基づいて、ウエハテーブル
WTを移動させる。
Here, the first controller CPU1 calculates the moving speed of the wafer table WT on the holder table from the moving speed of the reticle loader RL on the loader table LT and the exposure magnification β of the projection optical system T. Is calculated and transmitted to the driving device T2. The driving device is a first control unit CPU
The wafer table WT is moved on the basis of the moving speed transmitted from Step 1.

【0024】図2は、このウエハテーブルWTの構成を
詳細に表した図である。この図2において、投影光学系
Tの最もウエハW側の光学部材と、投影光学系Tの金枠
との間は、液体LQが浸透してこないように密着してい
るか、パッキングされている。また、ウエハテーブルW
Tの底部には、複数の開口が設けられており、これらの
開口に接続されている配管Vから減圧することにより、
ウエハWはウエハテーブルWTに吸着されている。そし
て、ウエハテーブルWTには、電極D1,D2が設けら
れており、これらの電極D1、D2のそれぞれの周囲に
は、イオン交換膜I1,I2が設けられている。これら
のイオン交換膜I1,I2により、電極D1,D2の周
囲と、露光光が液体LQを通過する領域とが区切られ
る。ここで、電極D1の周囲の雰囲気はイオン交換膜I
1と隔壁K1とにより密閉空間となっており、この密閉
空間には排気管H1が接続されている。また、電極D2
の周囲の雰囲気はイオン交換膜I2と隔壁K2とにより
密閉空間となっており、この密閉空間には排気管H2が
接続されている。これらの排気管H1、H2は、ともに
混合器Kに接続されている。この混合器Kには、電磁弁
DVを備えた導入管LDの一端が接続されており、この
導入管LDの他端は、ウエハテーブルWTの近傍に位置
している。
FIG. 2 is a diagram showing the configuration of the wafer table WT in detail. In FIG. 2, the optical member closest to the wafer W of the projection optical system T and the metal frame of the projection optical system T are in close contact with each other or are packed so that the liquid LQ does not permeate. Further, the wafer table W
At the bottom of T, a plurality of openings are provided, and by reducing the pressure from a pipe V connected to these openings,
The wafer W is attracted to the wafer table WT. Then, electrodes D1 and D2 are provided on wafer table WT, and ion exchange membranes I1 and I2 are provided around these electrodes D1 and D2, respectively. These ion exchange membranes I1 and I2 separate the periphery of the electrodes D1 and D2 from the region where the exposure light passes through the liquid LQ. Here, the atmosphere around the electrode D1 is the ion exchange membrane I
1 and a partition K1 form a closed space, and an exhaust pipe H1 is connected to this closed space. The electrode D2
Is surrounded by an ion exchange membrane I2 and a partition K2, and an exhaust pipe H2 is connected to the enclosed space. These exhaust pipes H1, H2 are both connected to the mixer K. One end of an inlet tube LD provided with an electromagnetic valve DV is connected to the mixer K, and the other end of the inlet tube LD is located near the wafer table WT.

【0025】電極D1,D2への印可電圧は図示なき電
源供給部から供給され、電源供給部が供給する印可電圧
は、第2制御部CPU2により制御される。また、電磁
弁DVの開閉に関してもは、第2制御部CPU2が制御
する。本例では、これらの電極D1,D2、イオン交換
膜I1,I2、隔壁K1,K2、排気管H1,H2、混
合器K、電磁弁DV、導入管LD、図示なき電源供給
部、第2制御部CPU2が屈折率調整手段を構成してい
る。
The voltage applied to the electrodes D1 and D2 is supplied from a power supply unit (not shown), and the voltage supplied from the power supply unit is controlled by the second control unit CPU2. Also, the opening and closing of the solenoid valve DV is controlled by the second control unit CPU2. In this example, these electrodes D1, D2, ion exchange membranes I1, I2, partition walls K1, K2, exhaust pipes H1, H2, mixer K, solenoid valve DV, introduction pipe LD, power supply unit not shown, second control The unit CPU2 constitutes a refractive index adjusting unit.

【0026】以下、屈折率調整手段の動作について説明
する。以下の説明において、液体LQは、純水に添加剤
として塩化水素を加えたものであるとしている。まず、
液体LQの屈折率を下げる場合、第2制御部CPU2
は、電源供給部へ指令を送り、電極D1及び電極D2の
間に所定の電圧を所定の時間だけ加印する。このとき、
陽極となる電極からは酸素気体が発生し、陰極となる電
極からは水素と塩素との混合気体が発生する。このと
き、液体LQにおける塩化水素濃度が下がるため、上記
(1)式からもわかるように、液体LQの屈折率が低下
する。ここで、各々の電極D1,D2の近傍で発生した
気体は、イオン交換膜I1,I2を通過しないため、排
気管H1,H2を介して回収することが可能である。こ
の回収された気体は、混合器Kへ送られる。混合器Kで
は、回収された気体(酸素気体、水素気体、塩化水素気
体)が混ぜ合わせられ、これより、液体LQよりも高濃
度の添加物水溶液が生成される。
The operation of the refractive index adjusting means will be described below. In the following description, it is assumed that the liquid LQ is obtained by adding hydrogen chloride as an additive to pure water. First,
When lowering the refractive index of the liquid LQ, the second control unit CPU2
Sends a command to the power supply unit and applies a predetermined voltage between the electrode D1 and the electrode D2 for a predetermined time. At this time,
An oxygen gas is generated from the electrode serving as the anode, and a mixed gas of hydrogen and chlorine is generated from the electrode serving as the cathode. At this time, since the concentration of hydrogen chloride in the liquid LQ decreases, the refractive index of the liquid LQ decreases as can be seen from the above equation (1). Here, the gas generated in the vicinity of each of the electrodes D1 and D2 does not pass through the ion exchange membranes I1 and I2, and can be recovered through the exhaust pipes H1 and H2. The recovered gas is sent to the mixer K. In the mixer K, the recovered gases (oxygen gas, hydrogen gas, hydrogen chloride gas) are mixed, whereby an additive aqueous solution having a higher concentration than the liquid LQ is generated.

【0027】また、液体LQの屈折率を上げる場合、第
2制御部CPU2は、電磁弁DVを開いて高濃度の添加
物水溶液を液体LQへ加えるように、電磁弁DVへ指令
を送る。これにより、液体LQの屈折率が上昇する。こ
の構成により、液体LQの屈折率を可変にできる。さ
て、第2制御部CPU2に接続されているメモリーM1
には、種々の照明条件ごとに対応して屈折率の値がテー
ブルの形で記憶されている。ここで、屈折率の値は、あ
る照明条件下において投影光学系Tで生じる収差を補正
するために必要な液体LQの屈折率の値である。また、
このメモリーM1には、ある時点における液体LQ中の
添加物濃度の値が、常に更新される形で保管されてい
る。
When increasing the refractive index of the liquid LQ, the second control unit CPU2 sends a command to the solenoid valve DV to open the solenoid valve DV and to add a high-concentration additive aqueous solution to the liquid LQ. Thereby, the refractive index of the liquid LQ increases. With this configuration, the refractive index of the liquid LQ can be made variable. Now, the memory M1 connected to the second control unit CPU2
In the table, values of the refractive index are stored in the form of a table corresponding to various illumination conditions. Here, the value of the refractive index is a value of the refractive index of the liquid LQ necessary for correcting the aberration generated in the projection optical system T under a certain illumination condition. Also,
The value of the additive concentration in the liquid LQ at a certain point in time is stored in the memory M1 in a form that is constantly updated.

【0028】また、上記の照明光学系ILは、この照明
光学系ILが形成する面光源の形状に関する情報を第2
制御部CPU2へ伝達するために、第2制御部CPU2
と接続されている。ここで、照明条件−本例では面光源
の形状−が変化すると、この情報は第2制御部CPU2
へ伝達される。このとき、第2制御部CPU2は、伝達
された照明条件に対応する屈折率の値をメモリーM1か
ら検索し、その屈折率を実現するための添加物の濃度を
上記(1)式から計算する。次に第2制御部CPU2
は、メモリーM1に保管されている現在の添加物濃度
と、計算された添加物濃度とに従って、現在の添加物濃
度を計算された添加物濃度とするように、電極D1,D
2あるいは電磁弁DVを制御する。
The illumination optical system IL described above stores information on the shape of the surface light source formed by the illumination optical system IL in a second form.
In order to transmit to the control unit CPU2, the second control unit CPU2
Is connected to Here, when the illumination conditions—in this example, the shape of the surface light source—change, this information is stored in the second control unit CPU2.
Is transmitted to At this time, the second control unit CPU2 searches the value of the refractive index corresponding to the transmitted illumination condition from the memory M1, and calculates the concentration of the additive for realizing the refractive index from the above equation (1). . Next, the second control unit CPU2
The electrodes D1 and D2 are used to set the current additive concentration to the calculated additive concentration according to the current additive concentration stored in the memory M1 and the calculated additive concentration.
2 or the solenoid valve DV is controlled.

【0029】これにより、液体LQの屈折率の値は、液
体LQを含めたときの投影光学系Tの収差が補正される
ものとなる。 [第2の実施の形態]第2の実施の形態は、第1の実施
の形態における添加物をエチルアルコールとした点が大
きく異なる。このエチルアルコールは、感光性基板とし
てのレジストが塗布されたウエハWのレジスト層を溶解
せず、投影光学系Tにおける最もウエハW側の光学部材
(液体LQと接する光学部材)及びこの光学部材に施さ
れた光学コートへの影響が少ない利点がある。
Thus, the value of the refractive index of the liquid LQ is such that the aberration of the projection optical system T including the liquid LQ is corrected. [Second Embodiment] The second embodiment is significantly different from the first embodiment in that the additive is ethyl alcohol. This ethyl alcohol does not dissolve the resist layer of the wafer W coated with the resist as the photosensitive substrate, and is applied to the optical member closest to the wafer W in the projection optical system T (the optical member in contact with the liquid LQ) and the optical member. There is an advantage that the influence on the applied optical coat is small.

【0030】また、第2の実施の形態においては、屈折
率調整手段の構成が第1の実施の形態のものとは異な
る。以下、図3を参照して屈折率調整手段の構成につき
説明する。なお、図3において、図2に示したものと同
じ機能を有する部材には、同じ符号を付してある。第2
の実施の形態によるウエハテーブルWTを示す図3にお
いて、第1の実施の形態のものとは異なる点は、添加物
を液体LQへ供給するための添加物供給管LSと、純水
を液体LQへ供給するための純水供給管WSと、液体L
QがウエハテーブルWTから溢れないように液体LQを
排出する排出管Lとを有する点である。
Further, in the second embodiment, the configuration of the refractive index adjusting means is different from that of the first embodiment. Hereinafter, the configuration of the refractive index adjusting means will be described with reference to FIG. In FIG. 3, members having the same functions as those shown in FIG. 2 are denoted by the same reference numerals. Second
FIG. 3 showing the wafer table WT according to the second embodiment differs from that of the first embodiment in that an additive supply pipe LS for supplying an additive to the liquid LQ and pure water is supplied to the liquid LQ. Pure water supply pipe WS for supplying liquid L
It has a discharge pipe L for discharging the liquid LQ so that Q does not overflow from the wafer table WT.

【0031】ここで、添加物供給管LS、純水供給管W
S及び排出管Lには、添加物及び純水の供給量を調整す
るための電磁弁DVLS,DVWS及び液体LQの排出
量を調整するための電磁弁DVLがそれぞれ設けられて
おり、これらの電磁弁DVLS,DVWS,DVLの開
閉は、第2制御部CPU2により制御されている。第2
の実施の形態における屈折率調整時の動作について説明
する。
Here, the additive supply pipe LS and the pure water supply pipe W
S and the discharge pipe L are provided with solenoid valves DVLS and DVWS for adjusting the supply amount of the additive and the pure water, and a solenoid valve DVL for adjusting the discharge amount of the liquid LQ, respectively. Opening and closing of the valves DVLS, DVWS, DVL is controlled by the second control unit CPU2. Second
The operation at the time of adjusting the refractive index in the embodiment will be described.

【0032】まず、液体LQの屈折率を上げる場合、第
2制御部CPU2は電磁弁DVLSを制御して、所定の
量だけ添加物を液体LQへ加える。このとき、排出管L
から液体LQを所定の量だけ排出する。この排出する液
体LQの量は、加えられた添加物の量と同じであること
が好ましい。これにより、液体LQ中の添加物濃度が高
まり、その屈折率が上昇する。
First, when increasing the refractive index of the liquid LQ, the second control unit CPU2 controls the solenoid valve DVLS to add a predetermined amount of additive to the liquid LQ. At this time, the discharge pipe L
, The liquid LQ is discharged by a predetermined amount. The amount of the liquid LQ to be discharged is preferably the same as the amount of the added additive. Thereby, the additive concentration in the liquid LQ increases, and the refractive index increases.

【0033】また、液体LQの屈折率を下げる場合、第
2制御部CPU2は電磁弁DVWSを制御して、所定の
量だけ純水を液体LQへ加える。このとき、排出管Lか
ら液体LQを所定の量だけ排出する。この排出する液体
LQの量は、加えられた純水の量と同じであることが好
ましい。これにより、液体LQ中の添加物濃度が低くな
り、その屈折率が低下する。
When lowering the refractive index of the liquid LQ, the second controller CPU2 controls the solenoid valve DVWS to add a predetermined amount of pure water to the liquid LQ. At this time, the liquid LQ is discharged from the discharge pipe L by a predetermined amount. It is preferable that the amount of the liquid LQ to be discharged is the same as the amount of the pure water added. Thereby, the concentration of the additive in the liquid LQ decreases, and the refractive index decreases.

【0034】ここで、加えられる添加物及び純水の量、
排出する液体LQの量は、第2制御部CPU2により制
御される。なお、メモリーM1内に照明条件の種類に対
応して屈折率の値が記憶される点、ある時点における液
体LQの添加物濃度の値が保管される点は、上述の第1
の実施の形態と同様であり、これらの情報に基づいて、
投影光学系Tの収差を補正できる屈折率を実現するため
の添加物濃度を計算する点も第1の実施の形態と同様で
ある。
Here, the amount of additive and pure water to be added,
The amount of the liquid LQ to be discharged is controlled by the second control unit CPU2. The point that the value of the refractive index is stored in the memory M1 corresponding to the type of the illumination condition and the value of the additive concentration of the liquid LQ at a certain point in time are stored in the first memory described above.
Is the same as the embodiment described above, and based on this information,
The calculation of the additive concentration for realizing a refractive index capable of correcting the aberration of the projection optical system T is also the same as in the first embodiment.

【0035】このようにして、第2の実施の形態におけ
る第2制御部CPU2は、メモリーM1に保管されてい
る現在の添加物濃度と、計算された添加物濃度とに従っ
て、現在の添加物濃度を計算された添加物濃度とするよ
うに、電磁弁DVLS,DVWS,DVLの開閉を制御
する。これにより、液体LQの屈折率の値は、液体LQ
を含めたときの投影光学系Tの収差が補正されるものと
なる。 [第3の実施の形態]次に、図4を参照して第3の実施
の形態について説明する。第3の実施の形態による露光
装置は、収差測定装置を備えている点で上述の第1及び
第2の実施の形態とは異なる。なお、図4において、上
述の図1〜図3の例と同じ機能を有する部材には同じ符
号を付してあり、図1と同様のXYZ座標系を採用して
いる。
As described above, the second control unit CPU2 in the second embodiment determines the current additive concentration according to the current additive concentration stored in the memory M1 and the calculated additive concentration. And the opening and closing of the solenoid valves DVLS, DVWS, and DVL are controlled so that is the calculated additive concentration. Thereby, the value of the refractive index of the liquid LQ becomes
Is corrected, the aberration of the projection optical system T is corrected. [Third Embodiment] Next, a third embodiment will be described with reference to FIG. The exposure apparatus according to the third embodiment is different from the above-described first and second embodiments in that the exposure apparatus includes an aberration measuring apparatus. In FIG. 4, members having the same functions as those in the examples of FIGS. 1 to 3 described above are denoted by the same reference numerals, and employ the same XYZ coordinate system as in FIG. 1.

【0036】図4において、光源Sは、波長248nm
の露光光を供給し、この光源Sからの露光光は、ビーム
整形光学系11により所定形状の断面に整えられた後、
第1フライアイレンズ12に入射する。第1フライアイ
レンズ12の射出側には、複数の光源像からなる2次光
源が形成される。この2次光源からの露光光は、リレー
レンズ系13F,13Rを経て第2フライアイレンズ1
5へ入射する。このリレーレンズ系は前群13F及び後
群13Rから構成され、これらの前群13F及び後群1
3Rの間には、被照射面上でのスペックルを防止するた
めの振動ミラー14が配置されている。
In FIG. 4, the light source S has a wavelength of 248 nm.
After the exposure light from the light source S is adjusted to a cross section of a predetermined shape by the beam shaping optical system 11,
The light enters the first fly-eye lens 12. On the emission side of the first fly-eye lens 12, a secondary light source composed of a plurality of light source images is formed. Exposure light from the secondary light source passes through the relay lens systems 13F and 13R, and then passes through the second fly-eye lens 1
5 is incident. This relay lens system includes a front group 13F and a rear group 13R.
Between the 3Rs, a vibrating mirror 14 for preventing speckle on the surface to be irradiated is arranged.

【0037】さて、第2フライアイレンズ15の射出面
側には、第1フライアイレンズによる2次光源の像が複
数形成され、これが3次光源となる。この3次光源が形
成される位置には、所定の形状あるいは所定の大きさを
持つ複数の開口絞りを設定できる可変開口絞り16が配
置されている。この可変開口絞り16は、例えば図5に
示すように、石英などで構成された透明基板上にパター
ニングされた6つの開口絞り16a〜16eをターレッ
ト状に設けたものである。ここで、円形開口を持つ2つ
の開口絞り16a,16bは、σ値(投影光学系の開口
数に対する照明光学系の開口数)を変更するための絞り
であり、輪帯形状を持つ2つの開口絞り16c,16d
は、互いに輪帯比の異なる絞りである。そして、残りの
2つの開口絞り16e,16fは、4つの偏心した開口
を有する絞りである。この可変開口絞り16は、可変開
口絞り駆動ユニット17により、複数の開口絞り16a
〜16fのうち何れか一つが光路内に位置するように駆
動される。
On the exit surface side of the second fly-eye lens 15, a plurality of images of the secondary light source by the first fly-eye lens are formed, and this becomes the tertiary light source. At a position where the tertiary light source is formed, a variable aperture stop 16 capable of setting a plurality of aperture stops having a predetermined shape or a predetermined size is disposed. As shown in FIG. 5, the variable aperture stop 16 is provided with six aperture stops 16a to 16e patterned on a transparent substrate made of quartz or the like in a turret shape. Here, the two aperture stops 16a and 16b having a circular aperture are apertures for changing a value (numerical aperture of the illumination optical system with respect to the numerical aperture of the projection optical system), and have two annular apertures. Aperture 16c, 16d
Are diaphragms having different ring zone ratios. The remaining two aperture stops 16e and 16f are aperture stops having four eccentric apertures. The variable aperture stop 16 is provided with a plurality of aperture stops 16 a by a variable aperture stop drive unit 17.
-16f is driven so as to be located in the optical path.

【0038】図4に戻って、可変開口絞り16からの露
光光は、コンデンサレンズ系18により集光されてレチ
クルブラインド19上を重畳的に照明する。レチクルブ
ラインド19は、リレー光学系20F,20Rに関して
レチクルRのパターン形成面と共役に配置されており、
レチクルブラインド19の開口形状によりレチクルR上
での照明領域の形状が決定される。レチクルブラインド
19からの露光光は、リレー光学系の前群20F、反射
鏡M及びリレー光学系の後群20Rを介してレチクルR
上の所定の位置に実質的に均一な照度分布の照明領域を
形成する。
Returning to FIG. 4, the exposure light from the variable aperture stop 16 is condensed by the condenser lens system 18 and illuminates the reticle blind 19 in a superimposed manner. The reticle blind 19 is disposed conjugate with the pattern forming surface of the reticle R with respect to the relay optical systems 20F and 20R.
The shape of the illumination area on the reticle R is determined by the opening shape of the reticle blind 19. Exposure light from the reticle blind 19 passes through the front group 20F of the relay optical system, the reflecting mirror M and the rear group 20R of the relay optical system to form a reticle R.
An illumination area having a substantially uniform illumination distribution is formed at a predetermined position on the upper side.

【0039】なお、前述の第1及び第2の実施の形態に
おける照明光学系ILは、この実施の形態に示したビー
ム整形光学系11〜リレー光学系20F,20Rを適用
することもできる。さて、レチクルRは、レチクルロー
ダ−RL上に載置されており、このレチクルローダ−R
Lは、ホルダーテーブルLT上で図中XY方向及びZ軸
を中心とした回転方向(θ方向)に移動可能となってい
る。このレチクルローダ−RLには、移動鏡RIMが設
けられており、レチクル干渉計RIは、レチクルローダ
−RLのXY方向及びθ方向の位置を検出する。また、
レチクルローダ−RLは、レチクルローダ−駆動ユニッ
トRLDによりXY方向及びθ方向へ駆動される。ここ
で、レチクル干渉計RIからの出力は、第1制御部CP
U1へ伝達され、第1制御部CPU1は、レチクルロー
ダ−駆動ユニットRLDを制御する構成となっている。
The illumination optical system IL according to the first and second embodiments can employ the beam shaping optical system 11 to the relay optical systems 20F and 20R described in this embodiment. Now, the reticle R is mounted on the reticle loader RL, and the reticle loader R
L is movable on the holder table LT in the XY directions and the rotation direction (θ direction) around the Z axis in the figure. The reticle loader RL is provided with a movable mirror RIM, and the reticle interferometer RI detects the position of the reticle loader RL in the XY direction and the θ direction. Also,
The reticle loader RL is driven in the XY direction and the θ direction by a reticle loader drive unit RLD. Here, the output from the reticle interferometer RI is the first control unit CP
The signal is transmitted to U1, and the first control unit CPU1 controls the reticle loader-drive unit RLD.

【0040】また、図示なきレチクルストッカーからの
搬送路の途中には、レチクルRに設けられたバーコード
を読みとるためのバーコードリーダーBRが設けられて
いる。このバーコードリーダーBRが読みとったレチク
ルRの種類に関する情報は、第2制御部CPU2へ伝達
される。ここで、第2制御部CPU2に接続されている
メモリーM1には、レチクルRの種類ごとに最適な照明
条件に関する情報と、レチクルRの種類ごとに最適な液
体LQの屈折率の値とが記憶されている。
A bar code reader BR for reading a bar code provided on the reticle R is provided in the middle of a transport path from a reticle stocker (not shown). Information on the type of the reticle R read by the barcode reader BR is transmitted to the second control unit CPU2. Here, in the memory M1 connected to the second control unit CPU2, information on the optimum illumination condition for each type of the reticle R and the value of the refractive index of the liquid LQ optimum for each type of the reticle R are stored. Have been.

【0041】レチクルRの下側には、所定の縮小倍率|
β|を有する投影光学系Tが設けられており、この投影
光学系Tの最もウエハ面側の光学部材とウエハWとの間
には、液体LQが介在している。投影光学系Tは、この
液体LQを介してウエハ面上にレチクルRの縮小像を形
成する。ウエハWは、ウエハテーブルWTに吸着固定さ
れており、このウエハテーブルWTは、ウエハテーブル
WT自体のZ軸方向への移動やティルト(Z軸に対する
傾き)を行わせるためのZアクチュエータZD1,ZD
2,ZD3を介して、定盤に対してXY方向に移動可能
なウエハステージWTSに取り付けられている。このウ
エハステージWTSは、ウエハステージ駆動ユニットW
Dにより駆動される。また、ウエハテーブルの側壁は鏡
面加工が施されており、この部分がウエハ干渉計WIの
移動鏡となっている。ここで、ウエハステージ駆動ユニ
ットWDの駆動は上述の第1制御部CPU1で制御さ
れ、ウエハ干渉計WIからの出力は第1制御部CPU1
へ伝達される構成となっている。
Below the reticle R, a predetermined reduction magnification |
A projection optical system T having β | is provided, and a liquid LQ is interposed between the wafer W and the optical member closest to the wafer surface of the projection optical system T. The projection optical system T forms a reduced image of the reticle R on the wafer surface via the liquid LQ. The wafer W is suction-fixed to the wafer table WT. The wafer table WT has Z actuators ZD1 and ZD for moving the wafer table WT itself in the Z-axis direction and tilting (tilting with respect to the Z-axis).
The wafer stage WTS is mounted on the wafer stage WTS that can move in the XY directions with respect to the surface plate via the ZD3 and ZD3. The wafer stage WTS includes a wafer stage drive unit W
D driven. The side wall of the wafer table is mirror-finished, and this portion serves as a moving mirror of the wafer interferometer WI. Here, the drive of the wafer stage drive unit WD is controlled by the above-described first control unit CPU1, and the output from the wafer interferometer WI is output by the first control unit CPU1.
It is configured to be transmitted to.

【0042】また、投影光学系Tには、投影光学系Tと
ウエハWとの間のZ方向の距離を測定するためのフォー
カスセンサAFが設けられている。このフォーカスセン
サAFは、投影光学系TにおけるウエハW側に近い光学
素子を介してウエハ面上に光を照射し、かつウエハで反
射された光を上記光学素子を介して受光し、その受光位
置により投影光学系TとウエハWとの間のZ方向の距離
を測定するものである。このようなフォーカスセンサA
Fの構成は、例えば特開平6-66543号公報に開示されて
いる。
The projection optical system T is provided with a focus sensor AF for measuring a distance in the Z direction between the projection optical system T and the wafer W. The focus sensor AF irradiates light onto the wafer surface via an optical element close to the wafer W in the projection optical system T, receives light reflected by the wafer via the optical element, and receives the light at the light receiving position. Is used to measure the distance in the Z direction between the projection optical system T and the wafer W. Such a focus sensor A
The configuration of F is disclosed, for example, in Japanese Patent Application Laid-Open No. 6-66543.

【0043】さて、第3の実施の形態においても、添加
物保管部LSTに貯蔵される高濃度の添加物水溶液を液
体LQへ供給するための添加物供給管LSと、純水保管
部WSTに貯蔵される純水を液体LQへ供給するための
純水供給管WSとを備えており、添加物供給管LS及び
純水供給管WSには、添加物水溶液及び純水の供給量を
調整するための電磁弁DVLS,DVWSが設けられて
いる。また、ウエハテーブルWTには、液体LQがウエ
ハテーブルから溢れないように液体LQを排出するため
の排出管Lが設けられており、この排出管Lには、液体
LQの排出量を調整するための電磁弁が設けられてい
る。これらの電磁弁DVLS,DVWS,DVLの開閉
は、上述の第2の実施の形態と同様に、第2制御部CP
U2により制御されている。
Now, also in the third embodiment, the additive supply pipe LS for supplying the high-concentration additive aqueous solution stored in the additive storage unit LST to the liquid LQ and the pure water storage unit WST A pure water supply pipe WS for supplying the stored pure water to the liquid LQ; and adjusting the supply amounts of the additive aqueous solution and the pure water to the additive supply pipe LS and the pure water supply pipe WS. Solenoid valves DVLS and DVWS are provided. The wafer table WT is provided with a discharge pipe L for discharging the liquid LQ so that the liquid LQ does not overflow from the wafer table. The discharge pipe L is used to adjust the discharge amount of the liquid LQ. Are provided. Opening and closing of these solenoid valves DVLS, DVWS, DVL is performed by the second control unit CP, as in the above-described second embodiment.
It is controlled by U2.

【0044】また、ウエハテーブルWT上には、投影光
学系の収差を測定するための収差測定部ASと、液体L
Qの添加物濃度を検出するための添加物濃度検出部DS
とが設けられている。ここで、収差測定部ASとして
は、例えば特開平6-84757号公報に開示されているもの
を用いることができる。ここで、収差測定部AS及び添
加物濃度検出部DSからの出力は、第2制御部CPU2
へ伝達される。また、添加物濃度検出部DSからの出力
は、第2制御部CPU2を介してメモリーM1へある時
点における液体LQの添加物濃度の値として保管され
る。
On the wafer table WT, an aberration measuring unit AS for measuring the aberration of the projection optical system and a liquid L
Additive concentration detector DS for detecting additive concentration of Q
Are provided. Here, as the aberration measuring unit AS, for example, the one disclosed in JP-A-6-84757 can be used. Here, the outputs from the aberration measurement unit AS and the additive concentration detection unit DS are output from the second control unit CPU2.
Is transmitted to The output from the additive concentration detection unit DS is stored as a value of the additive concentration of the liquid LQ at a certain point in time in the memory M1 via the second control unit CPU2.

【0045】次に、第3の実施の形態の動作について説
明する。まず、図示なきレチクルストッカーからレチク
ルRが取り出されてレチクルローダ−RL上に載置され
る途中に、バーコードリーダーBRは、レチクルRに設
けられているバーコードを読み取り、その情報を第2制
御部CPU2へ伝達する。第2制御部CPU2は、メモ
リーM1に記憶されているレチクルRの種類に対応した
照明条件に関する情報を読み出し、その情報に従って、
可変開口絞り駆動ユニット17を制御して開口絞り16
a〜16fのうちの所定の一つを光路内に位置させる。
また、第2制御部CPU2は、メモリーM1に記憶され
ている液体LQの屈折率の値に基づいて、その屈折率を
実現するための添加物の濃度を上記(1)式から計算す
る。その後、添加物濃度検出部DSにより検出されてメ
モリーM1に保管されている現在の添加物濃度と、計算
された添加物濃度とに従って、現在の添加物濃度を計算
された添加物濃度とするように、電磁弁DVLS,DV
WS,DVLの開閉を制御する。
Next, the operation of the third embodiment will be described. First, while the reticle R is taken out from a reticle stocker (not shown) and placed on the reticle loader RL, the barcode reader BR reads a barcode provided on the reticle R, and the information is read by the second control. To the CPU 2. The second control unit CPU2 reads information related to the illumination condition corresponding to the type of the reticle R stored in the memory M1, and according to the information,
The variable aperture stop drive unit 17 is controlled to control the aperture stop 16
A predetermined one of a to 16f is located in the optical path.
Further, based on the value of the refractive index of the liquid LQ stored in the memory M1, the second control unit CPU2 calculates the concentration of the additive for realizing the refractive index from the above equation (1). Thereafter, the current additive concentration is set to the calculated additive concentration according to the current additive concentration detected by the additive concentration detecting unit DS and stored in the memory M1 and the calculated additive concentration. And the solenoid valves DVLS and DV
Controls opening and closing of WS and DVL.

【0046】これにより、液体LQの屈折率の値は、液
体LQを含めたときの投影光学系Tの収差が補正される
ものとなる。この後、フォーカスセンサAFによりウエ
ハWのZ方向の位置及びティルトを検出して、ウエハW
が所要の位置になるようにZアクチュエータZD1,Z
D2,ZD3を駆動する。この状態において、光源Sか
らの露光光を照明光学系を介してレチクルRへ導き、第
1制御部CPU1は、レチクル干渉計RI及びウエハ干
渉計WIによりレチクルR及びウエハWの位置を検出し
つつ、レチクルローダ−駆動ユニットRLD及びウエハ
ステージ駆動ユニットWDを駆動させ、レチクルR及び
ウエハWを投影光学系Tの投影倍率|β|の速度比の元
で移動させる。これにより、レチクルR上のパターン
は、良好な結像状態のもとでウエハW上へ転写される。
Thus, the value of the refractive index of the liquid LQ is such that the aberration of the projection optical system T including the liquid LQ is corrected. Thereafter, the position and tilt of the wafer W in the Z direction are detected by the focus sensor AF, and the wafer W is detected.
So that the Z actuators ZD1 and Z
D2 and ZD3 are driven. In this state, the exposure light from the light source S is guided to the reticle R via the illumination optical system, and the first control unit CPU1 detects the positions of the reticle R and the wafer W by the reticle interferometer RI and the wafer interferometer WI. Then, the reticle loader-driving unit RLD and the wafer stage driving unit WD are driven to move the reticle R and the wafer W under the speed ratio of the projection optical system T at the projection magnification | β |. As a result, the pattern on the reticle R is transferred onto the wafer W under a good image formation state.

【0047】さて、投影光学系Tの結像性能(収差な
ど)は、常に一定ではなく、温度変化や大気圧変化、投
影光学系Tが露光光を吸収することによる温度上昇など
により変化する場合がある。そこで、第3の実施の形態
では、収差測定部ASにより実際の投影光学系Tの収差
(結像性能)を測定し、この測定結果に基づいて液体L
Qの屈折率の値を調整する構成としている。
The image forming performance (aberration etc.) of the projection optical system T is not always constant, but changes due to temperature change, atmospheric pressure change, temperature rise due to the projection optical system T absorbing exposure light, and the like. There is. Therefore, in the third embodiment, the aberration (imaging performance) of the actual projection optical system T is measured by the aberration measurement unit AS, and the liquid L is measured based on the measurement result.
It is configured to adjust the value of the refractive index of Q.

【0048】具体的には、第3の実施の形態では、メモ
リーM1内に投影光学系の収差値に対応させた形で、そ
の収差を補正できる液体LQの屈折率の値が記憶されて
いる。そして、収差測定部ASにより検出された投影光
学系Tの収差は、第2制御部CPU2へ伝達される。第
2制御部CPU2は、メモリーM1内に記憶されている
液体LQの屈折率の値を読み出し、この屈折率の値にな
るように添加物濃度を上記(1)式より求め、液体LQ
がその添加物濃度となるように電磁弁DVLS,DVW
S,DVLの開閉を制御する。
More specifically, in the third embodiment, the value of the refractive index of the liquid LQ capable of correcting the aberration is stored in the memory M1 in a form corresponding to the aberration value of the projection optical system. . Then, the aberration of the projection optical system T detected by the aberration measurement unit AS is transmitted to the second control unit CPU2. The second control unit CPU2 reads the value of the refractive index of the liquid LQ stored in the memory M1, obtains the additive concentration from the above equation (1) so as to obtain the value of the refractive index, and obtains the liquid LQ.
Is set to the additive concentration so that the solenoid valves DVLS, DVW
The opening and closing of S and DVL are controlled.

【0049】この構成により、投影光学系Tの環境変化
(温度変化、大気圧変動、露光光吸収による変動)があ
ってもその結像性能を良好に維持することができる。な
お、この収差測定部ASによる測定は、常時行う必要は
なく、所定の周期ごとに行えば良い。 [第4の実施の形態]次に図6を参照して、第4の実施
の形態について説明する。第4の実施の形態は、投影光
学系とウエハとの間の光路の全てを液体で満たす構成で
はなく、この光路の一部を液体で満たす構成としたもの
である。
With this configuration, even if there is an environmental change (a change in temperature, a change in atmospheric pressure, a change due to exposure light absorption) of the projection optical system T, it is possible to maintain good imaging performance. The measurement by the aberration measuring unit AS does not need to be performed at all times, but may be performed at predetermined intervals. [Fourth Embodiment] Next, a fourth embodiment will be described with reference to FIG. In the fourth embodiment, the optical path between the projection optical system and the wafer is not entirely filled with liquid, but a part of the optical path is filled with liquid.

【0050】図6(a),(b)において、図1〜3に
示した第1及び第2の実施の形態と同じ機能を有する部
材には同じ符号を伏してある。図6(a),(b)に示
す第4の実施の形態では、ウエハホルダ−WTの側壁に
より液体LQを溜める代わりに、露光光を透過させる材
料(例えば石英など)で構成された容器C1,C2中に
液体LQを満たす構成が前述の第1及び第2の実施の形
態とは異なる。この構成により、前述の第1及び第2の
実施の形態が有していた効果のうち、開口数増大または
実効的焦点深度拡大の効果はないものの、連続的に投影
光学系Tの収差(結像性能)調整が可能となる効果は有
している。
6 (a) and 6 (b), members having the same functions as those of the first and second embodiments shown in FIGS. In the fourth embodiment shown in FIGS. 6A and 6B, instead of storing the liquid LQ by the side wall of the wafer holder WT, the containers C1, C2 made of a material (for example, quartz or the like) that transmits exposure light are used. The configuration in which the liquid LQ is filled in C2 is different from the above-described first and second embodiments. With this configuration, among the effects of the first and second embodiments described above, although there is no effect of increasing the numerical aperture or increasing the effective depth of focus, the aberration of the projection optical system T is continuously increased. This has the effect of enabling adjustment of image performance).

【0051】なお、この第4の実施の形態において、液
体LQが入れられている容器C1,C2を投影光学系T
と一体に設けても良い。以上の第1〜第4の実施の形態
では、液体LQとして純水を用いたが純水に限られるこ
とはない。
In the fourth embodiment, the containers C1 and C2 containing the liquid LQ are connected to the projection optical system T.
And may be provided integrally. In the above-described first to fourth embodiments, pure water is used as the liquid LQ, but the liquid LQ is not limited to pure water.

【0052】[0052]

【発明の効果】以上に示したように本発明によれば、投
影光学系の結像性能を振動なく連続的に調整をすること
ができる。また、開口数の増大(或いは実効的な焦点深
度の拡大)と結像性能の調整とを両立させることが可能
となる。
As described above, according to the present invention, the imaging performance of the projection optical system can be continuously adjusted without vibration. In addition, it is possible to achieve both an increase in the numerical aperture (or an effective increase in the depth of focus) and adjustment of the imaging performance.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1及び第2の実施の形態にかかる露
光装置を全体的に示す概略図である。
FIG. 1 is a schematic view showing an entire exposure apparatus according to first and second embodiments of the present invention.

【図2】本発明の第1の実施の形態にかかる露光装置の
要部を示す断面図である。
FIG. 2 is a sectional view showing a main part of the exposure apparatus according to the first embodiment of the present invention.

【図3】本発明の第2の実施の形態にかかる露光装置の
要部を示す断面図である。
FIG. 3 is a sectional view showing a main part of an exposure apparatus according to a second embodiment of the present invention.

【図4】本発明の第3の実施の形態にかかる露光装置を
示す概略図である。
FIG. 4 is a schematic view showing an exposure apparatus according to a third embodiment of the present invention.

【図5】本発明の第3の実施の形態にかかる露光装置の
一部を示す概略図である。
FIG. 5 is a schematic view showing a part of an exposure apparatus according to a third embodiment of the present invention.

【図6】本発明の第4の実施の形態にかかる露光装置の
要部を示す断面図である。
FIG. 6 is a sectional view showing a main part of an exposure apparatus according to a fourth embodiment of the present invention.

【符号の説明】[Explanation of symbols]

S…光源 T2…駆動装置 IL…照明光学系 M1…メモリー M…反射板 V…減圧管 T…投影光学系 D1、D2…電極 W…ウエハ I1,I2…イオン交換
膜 LQ…液体 K1,K2…隔壁 R…レチクル H1,H2…配管 RL…レチクルローダー L…排出管 LT…ローダーテーブル LD…導入管 SS…センサー WS…純水供給管 WT…ウエハテーブル LS…添加物供給管 T1…駆動装置
S: Light source T2: Drive unit IL: Illumination optical system M1: Memory M: Reflector V: Decompression tube T: Projection optical system D1, D2: Electrode W: Wafer I1, I2: Ion exchange membrane LQ: Liquid K1, K2 Partition wall R ... Reticle H1, H2 ... Piping RL ... Reticle loader L ... Discharge pipe LT ... Loader table LD ... Introducing pipe SS ... Sensor WS ... Pure water supply pipe WT ... Wafer table LS ... Additive supply pipe T1 ... Drive device

Claims (11)

【特許請求の範囲】[Claims] 【請求項1】レチクル上に設けられたパターンを照明す
る照明光学系と、該パターンの像を感光性基板上に形成
する投影光学系とを有し、前記投影光学系と前記感光性
基板との間の光路中の少なくとも一部分に位置する液体
を介して露光を行う露光装置において、 前記液体の屈折率を調整するための屈折率調整手段を有
することを特徴とする露光装置。
An illumination optical system for illuminating a pattern provided on a reticle, and a projection optical system for forming an image of the pattern on a photosensitive substrate, wherein the projection optical system, the photosensitive substrate, An exposure apparatus for performing exposure via a liquid located at least in a part of an optical path between the liquid and an exposure apparatus, comprising: a refractive index adjusting unit for adjusting a refractive index of the liquid.
【請求項2】前記屈折率調整手段は、前記投影光学系の
結像性能を補正するように前記液体の屈折率を調整する
ことを特徴とする請求項1記載の露光装置。
2. An exposure apparatus according to claim 1, wherein said refractive index adjusting means adjusts the refractive index of said liquid so as to correct the imaging performance of said projection optical system.
【請求項3】前記投影光学系の結像性能を測定する結像
性能測定手段をさらに備え、 前記屈折率調整手段は、前記結像性能を補正するように
前記液体の屈折率を調整することを特徴とする請求項2
記載の露光装置。
3. An apparatus according to claim 1, further comprising an imaging performance measuring unit for measuring an imaging performance of said projection optical system, wherein said refractive index adjusting unit adjusts a refractive index of said liquid so as to correct said imaging performance. 3. The method according to claim 2, wherein
Exposure apparatus according to the above.
【請求項4】前記投影光学系の結像性能の変動の要因の
状態を検知する変動要因検知手段をさらに備え、 前記屈折率調整手段は、前記要因の状態に応じて、前記
結像性能を補正するように前記液体の屈折率を調整する
ことを特徴とする請求項1記載の露光装置。
4. The image forming apparatus according to claim 1, further comprising: a fluctuation factor detecting unit configured to detect a state of a factor of a change in the imaging performance of the projection optical system, wherein the refractive index adjusting unit adjusts the image forming performance in accordance with the state of the factor. 2. The exposure apparatus according to claim 1, wherein a refractive index of the liquid is adjusted so as to make a correction.
【請求項5】前記照明光学系は、前記レチクルに対する
照明条件を変更可能に構成され、 前記変動要因検知手段は、前記照明条件の状態を検知
し、 前記屈折率調整手段は、前記照明条件の変更に応じて、
前記結像性能を補正するように前記液体の屈折率を調整
することを特徴とする請求項4記載の露光装置。
5. The illumination optical system is configured to be able to change an illumination condition for the reticle, the variation factor detecting means detects a state of the illumination condition, and the refractive index adjusting means is configured to change the illumination condition. Depending on the change,
The exposure apparatus according to claim 4, wherein a refractive index of the liquid is adjusted so as to correct the imaging performance.
【請求項6】前記変動要因検知手段は、前記レチクルの
種類を判別するものであり、 前記屈折率調整手段は、前記レチクルの種類に応じて、
前記結像性能を補正するように前記液体の屈折率を調整
することを特徴とする請求項4記載の露光装置。
6. The variation factor detecting means determines a type of the reticle, and the refractive index adjusting means determines a type of the reticle according to the type of the reticle.
The exposure apparatus according to claim 4, wherein a refractive index of the liquid is adjusted so as to correct the imaging performance.
【請求項7】前記感光性基板を保持する感光性基板ホル
ダーをさらに備え、 該感光性基板ホルダーは、前記投影光学系と前記感光性
基板との間の光路を前記液体で満たすための側壁と、前
記液体を前記感光性基板ホルダーへ供給すると共に前記
感光性基板ホルダーから回収するための供給・回収ユニ
ットとを備えることを特徴とする請求項1乃至6の何れ
か一項記載の露光装置。
7. A photosensitive substrate holder for holding the photosensitive substrate, wherein the photosensitive substrate holder has a side wall for filling an optical path between the projection optical system and the photosensitive substrate with the liquid. The exposure apparatus according to any one of claims 1 to 6, further comprising a supply / recovery unit for supplying the liquid to the photosensitive substrate holder and recovering the liquid from the photosensitive substrate holder.
【請求項8】前記屈折率調整手段は、前記液体に屈折率
を調整するための添加剤を供給する添加剤供給ユニット
と、前記液体から前記添加剤を回収するための添加剤回
収ユニットとを有することを特徴とする請求項1乃至7
の何れか一項記載の露光装置。
8. An additive supply unit for supplying an additive for adjusting a refractive index to the liquid, and an additive recovery unit for recovering the additive from the liquid. 8. The method according to claim 1, further comprising:
The exposure apparatus according to claim 1.
【請求項9】所定の照明条件のもとでレチクルを照明す
る工程と、前記レチクル上に設けられたパターンを投影
光学系を用いて感光性基板に転写する工程とを含み、前
記投影光学系からの光を所定の液体を介して前記感光性
基板へ導く露光方法において、 前記投影光学系の結像性能を補正するために、前記液体
の屈折率を調整する工程を含むことを特徴とする露光方
法。
9. A projection optical system comprising: a step of illuminating a reticle under predetermined illumination conditions; and a step of transferring a pattern provided on the reticle to a photosensitive substrate using a projection optical system. An exposure method for directing light from the substrate to the photosensitive substrate via a predetermined liquid, comprising a step of adjusting a refractive index of the liquid in order to correct an imaging performance of the projection optical system. Exposure method.
【請求項10】所定の照明条件のもとでレチクルを照明
する工程と、前記レチクル上に設けられたデバイスパタ
ーンを投影光学系を用いて感光性基板に転写する工程と
を含み、前記投影光学系からの光を所定の液体を介して
前記感光性基板へ導くデバイス製造方法において、 前記レチクル及び前記照明条件のうち少なくとも一方が
変更されたときに、前記液体の屈折率を変更することを
特徴とするデバイス製造方法。
10. A projection optical system comprising: a step of illuminating a reticle under predetermined illumination conditions; and a step of transferring a device pattern provided on the reticle to a photosensitive substrate using a projection optical system. In a device manufacturing method for guiding light from a system to the photosensitive substrate through a predetermined liquid, a refractive index of the liquid is changed when at least one of the reticle and the illumination condition is changed. Device manufacturing method.
【請求項11】レチクル上に設けられたパターンを照明
する照明光学系と、該パターンの像を感光性基板上に形
成する投影光学系とを有し、前記投影光学系と前記感光
性基板との間の光路中の少なくとも一部分に位置する液
体を介して露光を行う露光装置の製造方法において、 前記投影光学系の結像性能を測定する工程と、 該測定された結像性能に基づいて、前記液体の屈折率の
初期値を定める工程とを含むことを特徴とする露光装置
の製造方法。
11. An illumination optical system for illuminating a pattern provided on a reticle, and a projection optical system for forming an image of the pattern on a photosensitive substrate, wherein the projection optical system, the photosensitive substrate, In a method of manufacturing an exposure apparatus that performs exposure via a liquid located at least in a part of an optical path between, a step of measuring the imaging performance of the projection optical system, based on the measured imaging performance, Determining an initial value of the refractive index of the liquid.
JP15198597A 1997-06-10 1997-06-10 EXPOSURE APPARATUS, ITS MANUFACTURING METHOD, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD Expired - Lifetime JP3817836B2 (en)

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WO2006112699A1 (en) * 2005-04-19 2006-10-26 Asml Netherlands B.V. Liquid immersion lithography system comprising a tilted showerhead
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WO2006122578A1 (en) * 2005-05-17 2006-11-23 Freescale Semiconductor, Inc. Contaminant removal apparatus and method therefor
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US7158211B2 (en) 2003-09-29 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7161663B2 (en) 2004-07-22 2007-01-09 Asml Netherlands B.V. Lithographic apparatus
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JP2007013180A (en) * 2005-06-29 2007-01-18 Qimonda Ag Fluid for immersion lithography system
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
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US7193681B2 (en) 2003-09-29 2007-03-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007073587A (en) * 2005-09-05 2007-03-22 Nikon Corp Exposure method, aligner, and method of manufacturing device
US7196770B2 (en) 2004-12-07 2007-03-27 Asml Netherlands B.V. Prewetting of substrate before immersion exposure
US7199858B2 (en) 2002-11-12 2007-04-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007103841A (en) * 2005-10-07 2007-04-19 Toshiba Corp Manufacture of semiconductor device
US7209213B2 (en) 2004-10-07 2007-04-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007513518A (en) * 2003-12-03 2007-05-24 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド Immersion lithography process using adaptive immersion media
US7224431B2 (en) 2005-02-22 2007-05-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007180555A (en) * 2005-12-27 2007-07-12 Asml Netherlands Bv Exposure apparatus and substrate end seal
US7248334B2 (en) 2004-12-07 2007-07-24 Asml Netherlands B.V. Sensor shield
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US7251017B2 (en) 2003-04-10 2007-07-31 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US7251013B2 (en) 2004-11-12 2007-07-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007266186A (en) * 2006-03-28 2007-10-11 Nikon Corp Aligner, method of adjusting aligner, and method of manufacturing device
US7291850B2 (en) 2005-04-08 2007-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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JP2008504708A (en) * 2004-07-01 2008-02-14 ザ ビーオーシー グループ ピーエルシー Immersion photolithography system
US7339650B2 (en) 2003-04-09 2008-03-04 Nikon Corporation Immersion lithography fluid control system that applies force to confine the immersion liquid
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US7369968B2 (en) 2000-06-16 2008-05-06 Verisae, Inc. Enterprise energy management system
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US7379155B2 (en) 2004-10-18 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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JP2008131045A (en) * 2006-11-22 2008-06-05 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP2008521224A (en) * 2004-11-18 2008-06-19 カール・ツアイス・エスエムテイ・アーゲー Projection objective lens of microlithography projection exposure apparatus
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US7411658B2 (en) 2005-10-06 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US7443482B2 (en) 2003-04-11 2008-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
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US7446850B2 (en) 2004-12-03 2008-11-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US7453078B2 (en) 2005-02-28 2008-11-18 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
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US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
WO2008108253A3 (en) * 2007-02-23 2008-12-04 Nippon Kogaku Kk Exposing method, exposure apparatus, device fabricating method, and substrate for immersion exposure
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7468779B2 (en) 2005-06-28 2008-12-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US7522259B2 (en) 2003-04-11 2009-04-21 Nikon Corporation Cleanup method for optics in immersion lithography
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US7583357B2 (en) 2004-11-12 2009-09-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US7670730B2 (en) 2004-12-30 2010-03-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US7705962B2 (en) 2005-01-14 2010-04-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
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US7791709B2 (en) 2006-12-08 2010-09-07 Asml Netherlands B.V. Substrate support and lithographic process
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US8064037B2 (en) 2003-08-21 2011-11-22 Nikon Corporation Immersion exposure apparatus and device manufacturing method with no liquid recovery during exposure
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Cited By (887)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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US7369968B2 (en) 2000-06-16 2008-05-06 Verisae, Inc. Enterprise energy management system
US9057967B2 (en) 2002-11-12 2015-06-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7199858B2 (en) 2002-11-12 2007-04-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10261428B2 (en) 2002-11-12 2019-04-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10191389B2 (en) 2002-11-12 2019-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2010135857A (en) * 2002-11-12 2010-06-17 Asml Netherlands Bv Lithography apparatus and method for fabricating device
US7224436B2 (en) 2002-11-12 2007-05-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7081943B2 (en) 2002-11-12 2006-07-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9588442B2 (en) 2002-11-12 2017-03-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7593092B2 (en) 2002-11-12 2009-09-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10620545B2 (en) 2002-11-12 2020-04-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007142460A (en) * 2002-11-12 2007-06-07 Asml Netherlands Bv Lithographic projection apparatus
US9366972B2 (en) 2002-11-12 2016-06-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7075616B2 (en) 2002-11-12 2006-07-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10222706B2 (en) 2002-11-12 2019-03-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7193232B2 (en) 2002-11-12 2007-03-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method with substrate measurement not through liquid
US6952253B2 (en) 2002-11-12 2005-10-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7388648B2 (en) 2002-11-12 2008-06-17 Asml Netherlands B.V. Lithographic projection apparatus
US9360765B2 (en) 2002-11-12 2016-06-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8344341B2 (en) 2002-11-12 2013-01-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9091940B2 (en) 2002-11-12 2015-07-28 Asml Netherlands B.V. Lithographic apparatus and method involving a fluid inlet and a fluid outlet
US9097987B2 (en) 2002-11-12 2015-08-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7932999B2 (en) 2002-11-12 2011-04-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7372541B2 (en) 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10788755B2 (en) 2002-11-12 2020-09-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9740107B2 (en) 2002-11-12 2017-08-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9195153B2 (en) 2002-11-12 2015-11-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8446568B2 (en) 2002-11-12 2013-05-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7482611B2 (en) 2002-11-12 2009-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9885965B2 (en) 2002-11-12 2018-02-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1420300A3 (en) * 2002-11-12 2005-08-10 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US10962891B2 (en) 2002-11-12 2021-03-30 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7593093B2 (en) 2002-11-12 2009-09-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7795603B2 (en) 2002-11-12 2010-09-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7009682B2 (en) 2002-11-18 2006-03-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119881B2 (en) 2002-11-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7359030B2 (en) 2002-11-29 2008-04-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7647207B2 (en) 2002-12-09 2010-01-12 Verisae, Inc. Method and system for tracking and reporting emissions
US7440871B2 (en) 2002-12-09 2008-10-21 Verisae, Inc. Method and system for tracking and reporting emissions
US8237915B2 (en) 2002-12-10 2012-08-07 Carl Zeiss Smt Gmbh Method for improving an optical imaging property of a projection objective of a microlithographic projection exposure apparatus
US7639343B2 (en) 2002-12-10 2009-12-29 Nikon Corporation Exposure apparatus and device manufacturing method
US7589820B2 (en) 2002-12-10 2009-09-15 Nikon Corporation Exposure apparatus and method for producing device
WO2004053951A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure method, exposure apparatus and method for manufacturing device
WO2004053952A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
US7948604B2 (en) 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
WO2004053956A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
US7379158B2 (en) 2002-12-10 2008-05-27 Nikon Corporation Exposure apparatus and method for producing device
JP2005101487A (en) * 2002-12-10 2005-04-14 Nikon Corp Exposure apparatus, device manufacturing method, and exposure system
WO2004053957A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Surface position detection apparatus, exposure method, and device porducing method
WO2004053950A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
US7505111B2 (en) 2002-12-10 2009-03-17 Nikon Corporation Exposure apparatus and device manufacturing method
WO2004053955A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure system and device producing method
WO2004053953A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
US7876418B2 (en) 2002-12-10 2011-01-25 Nikon Corporation Optical element and projection exposure apparatus based on use of the optical element
US7589821B2 (en) 2002-12-10 2009-09-15 Nikon Corporation Exposure apparatus and device manufacturing method
US8767173B2 (en) 2002-12-10 2014-07-01 Nikon Corporation Optical element and projection exposure apparatus based on use of the optical element
CN100446179C (en) * 2002-12-10 2008-12-24 株式会社尼康 Exposure equipment and device manufacturing method
JP2005101488A (en) * 2002-12-10 2005-04-14 Nikon Corp Aligner, exposure method, and manufacturing method of device
US7466392B2 (en) 2002-12-10 2008-12-16 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7460207B2 (en) 2002-12-10 2008-12-02 Nikon Corporation Exposure apparatus and method for producing device
WO2004053958A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
WO2004053954A1 (en) * 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
US7436487B2 (en) 2002-12-10 2008-10-14 Nikon Corporation Exposure apparatus and method for producing device
US7436486B2 (en) 2002-12-10 2008-10-14 Nikon Corporation Exposure apparatus and device manufacturing method
US7046337B2 (en) 2002-12-10 2006-05-16 Canon Kabushiki Kaisha Exposure apparatus and method
US7515246B2 (en) 2002-12-10 2009-04-07 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2009105471A (en) * 2002-12-10 2009-05-14 Nikon Corp Exposure apparatus and method of manufacturing device
US7446851B2 (en) 2002-12-10 2008-11-04 Nikon Corporation Exposure apparatus and device manufacturing method
US7126667B2 (en) 2002-12-10 2006-10-24 Canon Kk Exposure apparatus and method
JP2009105473A (en) * 2002-12-10 2009-05-14 Nikon Corp Exposure apparatus, device manufacturing method, and exposure system
JP2009105472A (en) * 2002-12-10 2009-05-14 Nikon Corp Vacuum system, immersion exposure device and method for exposure, and method for manufacturing device
JP2004207711A (en) * 2002-12-10 2004-07-22 Nikon Corp Exposure device, exposure method, and device manufacturing method
US7877235B2 (en) 2003-01-31 2011-01-25 Verisae, Inc. Method and system for tracking and managing various operating parameters of enterprise assets
JP2014112716A (en) * 2003-02-26 2014-06-19 Nikon Corp Exposure equipment, exposure method, and device manufacturing method
KR101288767B1 (en) * 2003-02-26 2013-07-23 가부시키가이샤 니콘 Exposure apparatus and method, and method of producing apparatus
JP2011023765A (en) * 2003-02-26 2011-02-03 Nikon Corp Exposure apparatus, exposure method, and method of producing device
US10180632B2 (en) 2003-02-26 2019-01-15 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9766555B2 (en) 2003-02-26 2017-09-19 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
CN100433253C (en) * 2003-02-26 2008-11-12 株式会社尼康 Exposure apparatus, exposure method, and method for producing device
JP2014112741A (en) * 2003-02-26 2014-06-19 Nikon Corp Exposure equipment, exposure method, and device manufacturing method
WO2004086468A1 (en) * 2003-02-26 2004-10-07 Nikon Corporation Exposure apparatus and method, and method of producing apparatus
JP2017068287A (en) * 2003-02-26 2017-04-06 株式会社ニコン Exposure apparatus, exposure method, and method for producing device
US7453550B2 (en) 2003-02-26 2008-11-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2010028127A (en) * 2003-02-26 2010-02-04 Nikon Corp Exposure apparatus, exposure method and device manufacturing method
JP2016075963A (en) * 2003-02-26 2016-05-12 株式会社ニコン Exposure apparatus, exposure method, and method for producing device
JP2018106206A (en) * 2003-02-26 2018-07-05 株式会社ニコン Exposure apparatus, exposure method, and method for producing device
CN102495540A (en) * 2003-02-26 2012-06-13 株式会社尼康 Exposure apparatus, exposure method, and method for producing device
JP2009147386A (en) * 2003-02-26 2009-07-02 Nikon Corp Exposure apparatus and method of producing device
US7268854B2 (en) 2003-02-26 2007-09-11 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2009302596A (en) * 2003-02-26 2009-12-24 Nikon Corp Exposure apparatus, exposure method, and method for manufacturing device
JP2012129565A (en) * 2003-02-26 2012-07-05 Nikon Corp Exposure equipment, exposure method, and device manufacturing method
US7535550B2 (en) 2003-02-26 2009-05-19 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7542128B2 (en) 2003-02-26 2009-06-02 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2015121825A (en) * 2003-02-26 2015-07-02 株式会社ニコン Exposure equipment, exposure method, and device manufacturing method
JP2006523383A (en) * 2003-03-04 2006-10-12 ピクセリジェント・テクノロジーズ・エルエルシー Application of nano-sized semiconductor particles for photolithography
WO2004079800A1 (en) * 2003-03-04 2004-09-16 Tokyo Ohka Kogyo Co. Ltd. Immersion liquid for immersion exposure process and resist pattern forming method using such immersion liquid
JP2011044736A (en) * 2003-03-25 2011-03-03 Nikon Corp Exposure apparatus, and device manufacturing method
JP2009158977A (en) * 2003-03-25 2009-07-16 Nikon Corp Exposure apparatus and device fabrication method
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WO2004086470A1 (en) * 2003-03-25 2004-10-07 Nikon Corporation Exposure system and device production method
WO2004090956A1 (en) * 2003-04-07 2004-10-21 Nikon Corporation Exposure apparatus and method for manufacturing device
US9618852B2 (en) 2003-04-09 2017-04-11 Nikon Corporation Immersion lithography fluid control system regulating flow velocity of gas based on position of gas outlets
US8797500B2 (en) 2003-04-09 2014-08-05 Nikon Corporation Immersion lithography fluid control system changing flow velocity of gas outlets based on motion of a surface
US7339650B2 (en) 2003-04-09 2008-03-04 Nikon Corporation Immersion lithography fluid control system that applies force to confine the immersion liquid
US9885959B2 (en) 2003-04-09 2018-02-06 Nikon Corporation Illumination optical apparatus having deflecting member, lens, polarization member to set polarization in circumference direction, and optical integrator
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US8497973B2 (en) 2003-04-09 2013-07-30 Nikon Corporation Immersion lithography fluid control system regulating gas velocity based on contact angle
US8243253B2 (en) 2003-04-10 2012-08-14 Nikon Corporation Lyophobic run-off path to collect liquid for an immersion lithography apparatus
EP2667252A1 (en) * 2003-04-10 2013-11-27 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
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US9977350B2 (en) 2003-04-10 2018-05-22 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US9658537B2 (en) 2003-04-10 2017-05-23 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
EP1611485A4 (en) * 2003-04-10 2008-10-29 Nikon Corp Environmental system including vaccum scavange for an immersion lithography apparatus
US9632427B2 (en) 2003-04-10 2017-04-25 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US7397532B2 (en) 2003-04-10 2008-07-08 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
CN103439864A (en) * 2003-04-10 2013-12-11 株式会社尼康 Environmental system including vaccum scavange for an immersion lithography apparatus
US9910370B2 (en) 2003-04-10 2018-03-06 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US7251017B2 (en) 2003-04-10 2007-07-31 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
EP3352010A1 (en) * 2003-04-10 2018-07-25 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
US7345742B2 (en) 2003-04-10 2008-03-18 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
KR101364889B1 (en) * 2003-04-10 2014-02-19 가부시키가이샤 니콘 Environmental system including vaccum scavange for an immersion lithography apparatus
US9785057B2 (en) 2003-04-11 2017-10-10 Nikon Corporation Liquid jet and recovery system for immersion lithography
JP2012084903A (en) * 2003-04-11 2012-04-26 Nikon Corp Immersion lithography apparatus and device manufacturing method
US7443482B2 (en) 2003-04-11 2008-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
JP2012074729A (en) * 2003-04-11 2012-04-12 Nikon Corp Immersion lithographic apparatus and device manufacturing method
KR20150122363A (en) * 2003-04-11 2015-11-02 가부시키가이샤 니콘 Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US10185222B2 (en) 2003-04-11 2019-01-22 Nikon Corporation Liquid jet and recovery system for immersion lithography
WO2004090577A3 (en) * 2003-04-11 2005-04-21 Nippon Kogaku Kk Maintaining immersion fluid under a lithographic projection lens
US9958786B2 (en) 2003-04-11 2018-05-01 Nikon Corporation Cleanup method for optics in immersion lithography using object on wafer holder in place of wafer
US9500960B2 (en) 2003-04-11 2016-11-22 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US9946163B2 (en) 2003-04-11 2018-04-17 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
EP2161619A1 (en) * 2003-04-11 2010-03-10 Nikon Corporation Cleanup method for optics in immersion lithography
US7522259B2 (en) 2003-04-11 2009-04-21 Nikon Corporation Cleanup method for optics in immersion lithography
US8059258B2 (en) 2003-04-11 2011-11-15 Nikon Corporation Liquid jet and recovery system for immersion lithography
KR101498405B1 (en) * 2003-04-11 2015-03-04 가부시키가이샤 니콘 Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
WO2004097911A1 (en) * 2003-05-01 2004-11-11 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US7471374B2 (en) 2003-05-01 2008-12-30 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US7524772B2 (en) 2003-05-09 2009-04-28 Panasonic Corporation Pattern formation method
US8080364B2 (en) 2003-05-09 2011-12-20 Panasonic Corporation Pattern formation method
JP2008160155A (en) * 2003-05-13 2008-07-10 Asml Netherlands Bv Lithographic apparatus and method of manufacturing device
US7352434B2 (en) 2003-05-13 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US9798246B2 (en) 2003-05-13 2017-10-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2282233A1 (en) * 2003-05-13 2011-02-09 ASML Netherlands BV Lithographic apparatus
EP2270599A1 (en) * 2003-05-13 2011-01-05 ASML Netherlands BV Lithographic apparatus
EP1477856A1 (en) * 2003-05-13 2004-11-17 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US8964164B2 (en) 2003-05-13 2015-02-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JPWO2004102646A1 (en) * 2003-05-15 2006-07-13 株式会社ニコン Exposure apparatus and device manufacturing method
JP4552853B2 (en) * 2003-05-15 2010-09-29 株式会社ニコン Exposure apparatus and device manufacturing method
WO2004102646A1 (en) * 2003-05-15 2004-11-25 Nikon Corporation Exposure apparatus and method for manufacturing device
TWI612557B (en) * 2003-05-23 2018-01-21 Nikon Corp Exposure method and exposure apparatus and component manufacturing method
KR101498439B1 (en) * 2003-05-23 2015-03-05 가부시키가이샤 니콘 Exposure method, exposure device, and device manufacturing method
JP2014199947A (en) * 2003-05-23 2014-10-23 株式会社ニコン Exposure device, exposure method, and device manufacturing method
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JP2015163996A (en) * 2003-05-23 2015-09-10 株式会社ニコン Exposure device, exposure method, and device manufacturing method
US9933708B2 (en) 2003-05-23 2018-04-03 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
EP1628329A4 (en) * 2003-05-23 2009-09-16 Nikon Corp Exposure device and device manufacturing method
US9977336B2 (en) 2003-05-23 2018-05-22 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
JP2017037345A (en) * 2003-05-23 2017-02-16 株式会社ニコン Exposure apparatus, exposure method, and method for manufacturing device
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WO2004105106A1 (en) * 2003-05-23 2004-12-02 Nikon Corporation Exposure method, exposure device, and device manufacturing method
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KR20160009710A (en) * 2003-05-23 2016-01-26 가부시키가이샤 니콘 Exposure method, exposure device, and device manufacturing method
JP2013153214A (en) * 2003-05-23 2013-08-08 Nikon Corp Exposure device, exposure method, and device manufacturing method
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US9939739B2 (en) 2003-05-23 2018-04-10 Nikon Corporation Exposure apparatus and method for producing device
US10082739B2 (en) 2003-05-28 2018-09-25 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
WO2004107417A1 (en) * 2003-05-28 2004-12-09 Nikon Corporation Exposure method, exposure device, and device manufacturing method
US7804574B2 (en) * 2003-05-30 2010-09-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using acidic liquid
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US9152058B2 (en) 2003-06-09 2015-10-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a member and a fluid opening
JP2012054601A (en) * 2003-06-09 2012-03-15 Asml Netherlands Bv Lithographic projection apparatus
JP2012114485A (en) * 2003-06-09 2012-06-14 Asml Netherlands Bv Lithographic device and device manufacturing method
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US20190250518A1 (en) * 2003-06-09 2019-08-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9541843B2 (en) 2003-06-09 2017-01-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a sensor detecting a radiation beam through liquid
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JP2007235179A (en) * 2003-06-09 2007-09-13 Asml Netherlands Bv Lithography apparatus and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2010161421A (en) * 2003-06-09 2010-07-22 Asml Netherlands Bv Lithography apparatus and method for manufacturing device
US9081299B2 (en) 2003-06-09 2015-07-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving removal of liquid entering a gap
EP1486827A3 (en) * 2003-06-11 2005-03-09 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
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US9964858B2 (en) 2003-06-11 2018-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI607292B (en) * 2003-06-13 2017-12-01 Nikon Corp Exposure device, exposure method, and device manufacturing method
JP2013016839A (en) * 2003-06-13 2013-01-24 Nikon Corp Substrate stage, exposure device, and device manufacturing method
WO2004112108A1 (en) * 2003-06-13 2004-12-23 Nikon Corporation Exposure method, substrate stage, exposure apparatus and method for manufacturing device
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JP2012248892A (en) * 2003-06-13 2012-12-13 Nikon Corp Substrate stage, exposure device, and device manufacturing method
US9846371B2 (en) 2003-06-13 2017-12-19 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US9551943B2 (en) 2003-06-19 2017-01-24 Nikon Corporation Exposure apparatus and device manufacturing method
US9715178B2 (en) 2003-06-19 2017-07-25 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US9810995B2 (en) 2003-06-19 2017-11-07 Nikon Corporation Exposure apparatus and device manufacturing method
US7411650B2 (en) 2003-06-19 2008-08-12 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US10191388B2 (en) 2003-06-19 2019-01-29 Nikon Corporation Exposure apparatus, and device manufacturing method
JP2011066458A (en) * 2003-06-19 2011-03-31 Asml Holding Nv Immersion photolithography system
US9709899B2 (en) 2003-06-19 2017-07-18 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US10007188B2 (en) 2003-06-19 2018-06-26 Nikon Corporation Exposure apparatus and device manufacturing method
CN101241308A (en) * 2003-06-19 2008-08-13 Asml控股股份有限公司 Immersion photolithography system and method for exposing substrate
EP1498778A1 (en) * 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119874B2 (en) 2003-06-27 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2009514183A (en) * 2003-06-27 2009-04-02 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus and device manufacturing method
WO2005001572A3 (en) * 2003-06-27 2005-04-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1491956A1 (en) * 2003-06-27 2004-12-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
USRE42741E1 (en) 2003-06-27 2011-09-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1494079A1 (en) * 2003-06-27 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7012673B2 (en) 2003-06-27 2006-03-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1494075B1 (en) * 2003-06-30 2008-06-25 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7110087B2 (en) 2003-06-30 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7038760B2 (en) 2003-06-30 2006-05-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4844123B2 (en) * 2003-07-09 2011-12-28 株式会社ニコン Exposure apparatus and device manufacturing method
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US10209623B2 (en) 2003-10-09 2019-02-19 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
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WO2005050324A3 (en) * 2003-11-05 2005-09-22 Dsm Ip Assets Bv A method and apparatus for producing microchips
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US7379162B2 (en) 2003-12-08 2008-05-27 Canon Kabushiki Kaisha Substrate-holding technique
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US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
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JP2008219020A (en) * 2003-12-23 2008-09-18 Asml Netherlands Bv Lithographic apparatus
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9684250B2 (en) 2003-12-23 2017-06-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9588436B2 (en) 2004-01-05 2017-03-07 Nikon Corporation Exposure apparatus, exposure method, and device producing method
US9910369B2 (en) 2004-01-05 2018-03-06 Nikon Corporation Exposure apparatus, exposure method, and device producing method
US8064044B2 (en) 2004-01-05 2011-11-22 Nikon Corporation Exposure apparatus, exposure method, and device producing method
US10345710B2 (en) 2004-01-20 2019-07-09 Carl Zeiss Smt Gmbh Microlithographic projection exposure apparatus and measuring device for a projection lens
US9436095B2 (en) 2004-01-20 2016-09-06 Carl Zeiss Smt Gmbh Exposure apparatus and measuring device for a projection lens
EP2762976A1 (en) * 2004-01-23 2014-08-06 Air Products And Chemicals, Inc. Use of immersion liquids
US7879531B2 (en) 2004-01-23 2011-02-01 Air Products And Chemicals, Inc. Immersion lithography fluids
EP1557721A3 (en) * 2004-01-23 2007-06-06 Air Products And Chemicals, Inc. Immersion lithography fluids
KR100967372B1 (en) * 2004-01-23 2010-07-05 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 Immersion lithography fluid
JP2005252239A (en) * 2004-01-23 2005-09-15 Air Products & Chemicals Inc Immersion lithographic fluid
US8007986B2 (en) 2004-01-23 2011-08-30 Air Products And Chemicals, Inc. Immersion lithography fluids
US7697110B2 (en) 2004-01-26 2010-04-13 Nikon Corporation Exposure apparatus and device manufacturing method
US8330934B2 (en) 2004-01-26 2012-12-11 Nikon Corporation Exposure apparatus and device manufacturing method
US9632431B2 (en) 2004-02-02 2017-04-25 Nikon Corporation Lithographic apparatus and method having substrate and sensor tables
US9665016B2 (en) 2004-02-02 2017-05-30 Nikon Corporation Lithographic apparatus and method having substrate table and sensor table to hold immersion liquid
US10007196B2 (en) 2004-02-02 2018-06-26 Nikon Corporation Lithographic apparatus and method having substrate and sensor tables
US9684248B2 (en) 2004-02-02 2017-06-20 Nikon Corporation Lithographic apparatus having substrate table and sensor table to measure a patterned beam
US10139737B2 (en) 2004-02-02 2018-11-27 Nikon Corporation Lithographic apparatus and method having substrate and sensor tables
JP2007520893A (en) * 2004-02-03 2007-07-26 ロチェスター インスティテュート オブ テクノロジー Photolithographic method and system using fluid
US10151983B2 (en) 2004-02-03 2018-12-11 Nikon Corporation Exposure apparatus and device manufacturing method
EP2765595A1 (en) * 2004-02-04 2014-08-13 Nikon Corporation Exposure apparatus, exposure method, and method for producing a device
US10048602B2 (en) 2004-02-04 2018-08-14 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2005252247A (en) * 2004-02-04 2005-09-15 Nikon Corp Exposure device, exposure method, and method of fabricating the device
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US20130271945A1 (en) 2004-02-06 2013-10-17 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10234770B2 (en) 2004-02-06 2019-03-19 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10241417B2 (en) 2004-02-06 2019-03-26 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US10007194B2 (en) 2004-02-06 2018-06-26 Nikon Corporation Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2010153922A (en) * 2004-02-09 2010-07-08 Yoshihiko Okamoto Method of manufacturing semiconductor device
EP1562080B1 (en) * 2004-02-09 2007-08-29 Koninklijke Philips Electronics N.V. Lithographic apparatus and device manufacturing method
USRE42849E1 (en) 2004-02-09 2011-10-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US7616290B2 (en) 2005-05-11 2009-11-10 Canon Kabushiki Kaisha Exposure apparatus and method
US9891539B2 (en) 2005-05-12 2018-02-13 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
WO2006122578A1 (en) * 2005-05-17 2006-11-23 Freescale Semiconductor, Inc. Contaminant removal apparatus and method therefor
JP4596191B2 (en) * 2005-05-24 2010-12-08 株式会社ニコン Exposure method, exposure apparatus, and device manufacturing method
WO2006126522A1 (en) * 2005-05-24 2006-11-30 Nikon Corporation Exposure method, exposure apparatus and device manufacturing method
US8253924B2 (en) 2005-05-24 2012-08-28 Nikon Corporation Exposure method, exposure apparatus and device manufacturing method
JPWO2006126522A1 (en) * 2005-05-24 2008-12-25 株式会社ニコン Exposure method, exposure apparatus, and device manufacturing method
US8879159B2 (en) 2005-06-14 2014-11-04 Carl Zeiss Smt Gmbh Lithography projection objective, and a method for correcting image defects of the same
US9316922B2 (en) 2005-06-14 2016-04-19 Carl Zeiss Smt Gmbh Lithography projection objective, and a method for correcting image defects of the same
US9964859B2 (en) 2005-06-14 2018-05-08 Carl Zeiss Smt Gmbh Lithography projection objective, and a method for correcting image defects of the same
US7751027B2 (en) 2005-06-21 2010-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US7722267B2 (en) 2006-01-16 2010-05-25 Sokudo Co., Ltd. Substrate processing apparatus
KR100797666B1 (en) * 2006-01-16 2008-01-23 다이닛뽕스크린 세이조오 가부시키가이샤 Substrate Processing Equipment
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US11187991B2 (en) 2008-05-28 2021-11-30 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
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US8159065B2 (en) 2009-03-06 2012-04-17 Hynix Semiconductor Inc. Semiconductor package having an internal cooling system
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WO2010103822A1 (en) * 2009-03-10 2010-09-16 株式会社ニコン Exposure apparatus, exposure method and device manufacturing method
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JP2010093300A (en) * 2010-01-25 2010-04-22 Nikon Corp Flow path forming member, aligner and method for manufacturing device
US9846372B2 (en) 2010-04-22 2017-12-19 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
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US9256136B2 (en) 2010-04-22 2016-02-09 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply
CN103543611A (en) * 2012-07-16 2014-01-29 台湾积体电路制造股份有限公司 Lithography process
CN104216233A (en) * 2013-06-05 2014-12-17 中芯国际集成电路制造(上海)有限公司 Exposure method
CN103439869A (en) * 2013-09-02 2013-12-11 上海华力微电子有限公司 Method for measuring graphic density
CN104570615A (en) * 2013-10-29 2015-04-29 上海微电子装备有限公司 Scanning exposure device

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