JPH06230034A - Probe base plate and manufacture thereof - Google Patents

Abstract

PURPOSE:To provide a probe base plate to lead a signal from a semiconductor test device to an object to be inspected and manufacturing method therefor. CONSTITUTION:Wiring layers 1b1, 1b2 are formed on the surface of one side of a base film 1a so as to have a required pattern, bump electrodes 1d2, 1d3 are formed in the position in response to the electrode pad of an object to be inspected in the vicinity of one-sided ends of the wiring layers, and bump electrodes 1d1, 1d4 for electrically exchanging signals between a semiconductor test device and themselves are formed in the vicinity of the other ends of the wiring layers. A wiring film 1 completed by such processes is fitted to a base material 2 so as to complete a probe base plate.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe substrate and a method for manufacturing the same, and particularly to a plurality of bare chips when a semiconductor chip is tested in a wafer state or when the semiconductor chip is cut into chips to be electrically tested. When performing an electrical test on the base substrate of a multi-chip module in which are mounted on the same base substrate (this base substrate is also manufactured in the same process as the semiconductor manufacturing process, so it can be said that it is a semiconductor device in a broad sense). The present invention relates to a probe substrate for making electrical contact between a semiconductor test device and an object to be tested as described above, and a manufacturing method thereof.

[0002]

2. Description of the Related Art Conventionally, an apparatus of this type has been shown in FIG. This FIG. 3 is called a probe card, and its quality is checked by exchanging electrical signals with a semiconductor chip to be inspected, a semiconductor wafer on which a semiconductor chip is built, a base substrate of a multi-chip module, and the like. It is attached to a probe head of a semiconductor test device to be judged and makes electrical contact with an electrode pad to be inspected.

In the figure, 101 is a probe card body attached to a probe head of a semiconductor test apparatus,
Reference numeral 101a denotes an opening thereof, and reference numeral 102 denotes a pin which is plurally implanted in the probe card main body 101 and which directly contacts a pad to be inspected.

In this probe card, a test pattern generated in the main body of a semiconductor test device composed of a minicomputer or the like is poured into an electrode pad of a test object through its pin 102, and a response signal output from the test object. Is transmitted to the semiconductor test device via the pin 102. The main body of the semiconductor test device compares the response signal from the object to be inspected with the expected value stored inside, detects whether or not it matches, and if they match, this is a good product. If they do not match, this is determined to be a defective product.

[0005]

The conventional probe card is constructed as described above, and the attachment of the pins to the probe card body depends on manual work. The price is in the yen range, and there is a problem that the device becomes very expensive. In addition, in recent years, the number of pads has increased dramatically as the performance of semiconductor integrated circuits has increased, and it has become necessary to increase the number of pins accordingly, but probe cards have a limited probe pitch. It is said that the pitch is limited to about 80 μm. Therefore, it is said that the number of pins is about 500, and in this case, the price is said to be several million yen.

Although the probe card is expensive as described above, it is a consumable item and wears out after repeated contact with the object to be inspected. There is a problem that it is necessary to replace it, which is reflected in the test cost and leads to an increase in the price of the inspection target.

Further, when actually performing a test work using a probe card, a work called "overdrive" is performed to press the pin once by an external force to make it difficult to insert the pad in order to reduce the contact resistance with the pad. However, at that time, if the control of pressurization fails, the pin is often plastically deformed and cannot be returned to its original state. Also, I often experience accidents where the worker touches the pin and breaks it.

The present invention has been made in order to solve the problems of the conventional ones described above, and can be constructed at a low cost, can suppress an increase in test cost, and is easy to handle. The purpose is to obtain a manufacturing method.

[0009]

A probe substrate according to the present invention is a film substrate formed of an insulator, and a wiring layer formed on one surface of the film substrate so as to have a desired pattern. And an electrical connection between a first electrode member formed at a position corresponding to an electrode pad to be inspected near one end of the wiring layer and a semiconductor test device formed near the other end of the wiring layer. The probe substrate is configured by a wiring film having a second electrode member for exchanging signals and a base material on which the wiring film is mounted.

Further, in the method for manufacturing a probe substrate according to the present invention, a wiring layer is formed on one surface of a film-like substrate formed of an insulator so as to have a required pattern, and one end of this wiring layer is formed. Of the second electrode for electrically exchanging signals with the semiconductor test device in the vicinity of the other end of the wiring layer while forming the first electrode member at a position corresponding to the electrode pad to be inspected. An electrode member is formed to complete a wiring film, and this wiring film is attached on a base material to complete a probe substrate.

[0011]

According to the present invention, since the probe board is composed of the wiring film and the base material on which the wiring film is mounted as described above, the pin for guiding the signal from the semiconductor test device to the object to be inspected becomes unnecessary. Eliminates the need for manual work to install the pins. Further, in the present invention, as described above, the wiring film is completed by the same process as that for manufacturing the semiconductor, and the probe substrate is completed by attaching the wiring film on the base material. A method that can be produced is obtained.

[0012]

【Example】

Example 1. An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows a probe substrate according to an embodiment of the present invention. In the figure, reference numeral 1 is a single-layer wiring film having a single-layer wiring formed on the surface thereof, which is composed of a base film 1a, a wiring layer 1b, a protective layer 1c, and bump electrodes 1d. Reference numeral 1a is a base film serving as a support for the metal wiring layer 1b, which is made of a resin such as polyimide or polyester and has a thickness of, for example, 25 μm. Reference numeral 1b is a wiring layer formed on the base film so as to have a desired pattern, and is formed to have a thickness of, for example, 3 μm by using copper, aluminum or the like as a material thereof. 1c is a protective layer that covers the wiring layer 1b,
For example, using polyimide or the like as the material, for example, 2 to 10
It is formed to have a thickness of μm. Also, 1d
Is a bump electrode provided at a required portion of the wiring layer 1b, and is made of, for example, gold, tungsten, solder or the like, and is formed to have a height of, for example, about 20 μm. The wiring film may have a multilayer wiring formed on its surface. Reference numeral 2 is a base material for attaching the single-layer wiring film 1 having such a structure, and is made of, for example, a metal such as aluminum or iron or plastic, and is formed to have a thickness of, for example, 1 mm to 2 mm. ing. When the probe substrate is screwed and fixed to the probe head, the base material 2 may be formed to have a thickness of 5 mm, for example. An opening 2a is provided in the center of the film wiring 1 to pressurize the film wiring 1 by air pressure in the direction indicated by the arrow in the figure.

Next, the manufacturing process will be described with reference to FIG. First, one metal layer to be a wiring layer is formed on the entire surface of the base film 1a by vapor deposition or sputtering (see FIG. 2 (a)). Next, this metal layer is etched by photolithography to form wiring layers 1b1 and 1b2 having a required pattern (see FIG. 2 (b)).

Next, a layer to be a protective layer is formed by coating the entire surface (see FIG. 2 (c)), and openings 1c3 to 1c6 are formed by photolithography in the portions of the layer where bump electrodes are to be formed. , Protective layers 1c1, 1c2
Are formed (see FIG. 2 (d)). The formation of this opening exposes the ground shoulder of the wiring layer in this opening. However, the bump material can be deposited by plating thereover, whereby the bump electrodes 1d1 to 1d are formed.
4 can be formed (see FIG. 2 (e)). The single-layer wiring film 1 was able to be formed by performing the above each process.

Next, the single-layer wiring film 1 thus formed is bonded to a base material 2 having an opening 2a at its center and an adhesive of Si-based, epoxy-based or polyimide-based, or a low melting point. The probe substrate corresponding to FIG. 1 is completed by adhering each other with glass (see FIG. 2).
(See (f)).

Next, in order to inspect an object to be inspected using this probe substrate, the device of FIG. 1 is attached to the probe head of the semiconductor test device, and the bump electrodes 1d2, which correspond to the portion just below the opening 2a of the substrate 2, are formed. Positioning is performed so that 1d3 comes to a position corresponding to the pad to be inspected, and the pad to be inspected is brought into contact with the bump electrode of this probe substrate by applying air pressure of, for example, 500 g / cm ² or more. The surfaces are surely brought into contact with each other, thereby reducing the electrical contact resistance between the pad to be inspected and the bump electrode of this probe substrate. Then, in this state, the bump electrodes 1d1, 1d4 on the outer side of the single-layer wiring film, the wiring electrodes 1b1, 1b2, the inner bump electrodes 1d2,
By sending the test signal to the side of the object to be inspected through 1d3 and taking out the response signal of the object to be inspected through the reverse path, the semiconductor test device can reliably send the test signal to the object to be inspected. Moreover, it becomes possible to accurately obtain the response signal from the inspection target.

As described above, according to the above-described embodiment, the probe board for electrically exchanging signals between the semiconductor test apparatus and the object to be inspected is exchanged with the same as in the case of manufacturing a semiconductor. Since it is manufactured by using a process, it can be manufactured at low cost without depending on manual work, and it is possible to suppress an increase in test cost and a pass-through to the product price. Further, it is possible to easily cope with a reduction in the pitch between bump electrodes due to the increase in the number of pads in the device under test, and a device having 500 pins or more, such as a base substrate of a multichip module, was an object to be inspected. Even in this case, it is possible to practically and inexpensively manufacture a product that can handle this. Also, since the bump electrodes are formed by plating on the wiring film, it is extremely unlikely to damage them due to carelessness of the test operator. Even if adhered, it can be easily returned to a normal state by washing it.

Example 2. In the first embodiment, the wiring layer on the base film is formed by vacuum evaporation, but it may be formed by adhesion as shown in FIG.

FIG. 4 is a diagram showing a manufacturing process of the probe substrate according to the second embodiment of the present invention. First, a copper foil to be a wiring layer is attached to the entire surface of the base film 1a with silicon resin (see FIG. 4 (a)). Next, this copper foil is etched into a desired pattern by photolithography to form wiring layers 1b1 and 1b2 (see FIG. 4 (b)), and the subsequent steps are the same as those shown in FIG. .

That is, a layer to be a protective layer is formed by coating the entire surface (see FIG. 4 (c)), and openings 1c3 to 1c6 are formed by photolithography in portions of the layer where bump electrodes are to be formed. , Protective layers 1c1, 1c
2 is formed (see FIG. 4 (d)). Then, by forming this opening, the ground shoulder of the wiring layer is exposed at this opening portion, but the bump material can be deposited by performing plating on this, whereby the bump electrodes 1d1 to 1d1 are formed.
d4 can be formed (see FIG. 4 (e)). The single-layer wiring film 1 was able to be formed by performing the above each process.

Next, the single-layer wiring film 1 thus formed is treated with a base material 2 having an opening 2a at the center thereof and an adhesive of Si type, epoxy type, polyimide type, or a low melting point. By adhering each other with glass, a probe substrate corresponding to FIG. 1 is completed (FIG. 4).
(See (f)).

In this embodiment, the metal layer to be the wiring layer is formed by adhesion instead of using vacuum vapor deposition as in the embodiment of FIG. It can be constructed at low cost.

Example 3. Further, although the wiring layer on the base film is formed by adhesion in the second embodiment, it may be formed by plating as shown in FIG.

FIG. 5 is a diagram showing a manufacturing process of a probe substrate according to a third embodiment of the present invention. First, copper to be a wiring layer is deposited on the entire surface of the polyimide base film 1a by electroless plating (see FIG. 5 (a)).
Next, the wiring layers 1b1 and 1b2 are formed by removing portions other than required portions of the copper by photolithography (see FIG. 5B). The subsequent steps are similar to those shown in FIG.

That is, a layer to be a protective layer is formed by coating the entire surface (see FIG. 5 (c)), and openings 1c3 to 1c6 are formed by photolithography in the portions of the layer where bump electrodes are to be formed. , Protective layers 1c1, 1c
2 is formed (see FIG. 5 (d)). Then, by forming this opening, the ground shoulder of the wiring layer is exposed at this opening portion, but the bump material can be deposited by performing plating on this, whereby the bump electrodes 1d1 to 1d1 are formed.
d4 can be formed (see FIG. 5 (e)). The single-layer wiring film 1 was able to be formed by performing the above each process.

Next, the single-layer wiring film 1 thus formed is bonded to a base material 2 having an opening 2a at its center and an adhesive of Si type, epoxy type or polyimide type, or a low melting point. By adhering each other with glass, a probe substrate corresponding to FIG. 1 is completed (FIG. 5).
(See (f)).

In this embodiment, a metal layer to be a wiring layer is formed by plating instead of using vacuum vapor deposition as in the embodiment of FIG. The structure can be constructed at low cost, and the adhesive force can be increased as compared with the embodiment of FIG. 4 in which it is formed by adhesion, and the reliability can be further increased as compared with the embodiment of FIG.

In each of the above embodiments, the air pressure is applied to improve the contact with the object to be inspected.
In addition to this, vibration by ultrasonic waves may be applied, whereby the natural oxide film generated on the pad to be inspected may be destroyed to further improve the electrical contactability.

[0029]

As described above, according to the probe substrate of the present invention, the first electrode member, which is in contact with the electrode pad to be inspected, is formed on one end of the film-shaped substrate on the film substrate. , A wiring film having a plurality of wiring layers each having a second electrode member for exchanging signals with the semiconductor test device near the other end, and a substrate on which the wiring film is mounted. As a result, there is no need to transmit the signal with a pin as in the conventional probe card, the risk of damage is dramatically reduced, and manual work when attaching the pin is unnecessary, and the device can be provided at low cost. There is.

Further, according to the method for manufacturing a probe substrate according to the present invention, a metal layer to be a wiring layer is formed on a film-shaped substrate, and this is patterned to form a plurality of wiring layers having a required pattern. A second electrode is formed near one end of the wiring layer to form a first electrode member in mutual contact with an electrode pad to be inspected, and a signal is exchanged with the semiconductor test device near the other end of the wiring layer. Since the wiring film is formed by forming the electrode member of, and this wiring film is mounted on the base material, the probe substrate in which the damage resistance of the signal transmitter is increased as compared with the probe card in the semiconductor process. There is an effect that it can be offered at a low cost.

[Brief description of drawings]

FIG. 1 is a sectional view showing a probe substrate according to an embodiment of the present invention.

FIG. 2 is a process flow chart showing a method for manufacturing the device of FIG.

FIG. 3 is a diagram showing a conventional probe card.

FIG. 4 is a process flow chart showing another method of manufacturing the device of FIG.

5 is a process flow chart showing still another method of manufacturing the device of FIG. 1. FIG.

[Explanation of symbols]

 1 Single Layer Wiring Film 1a Base Film 1b1, 1b2 Wiring Layer 1c Protective Layer 1d1, 1d2, 1d3, 1d4 Bump Electrode 2 Base Material

Claims (2)

[Claims] 1. A film-like substrate formed of an insulator, a wiring layer formed on one surface of the film-like substrate so as to have a required pattern, and an object to be inspected near one end of the wiring layer. Second electrode for electrically exchanging signals between a first electrode member formed at a position corresponding to the electrode pad of the above and a semiconductor test device formed near the other end of this wiring layer A probe board comprising: a wiring film having a member; and a base material on which the wiring film is mounted. 2. A first step of forming a wiring layer on one surface of a film-like substrate made of an insulating material so as to have a required pattern, and an object to be inspected near one end of this wiring layer. A first electrode member is formed at a position corresponding to the electrode pad, and a second electrode member for electrically exchanging signals with the semiconductor test device is formed near the other end of this wiring layer. A method of manufacturing a probe substrate, comprising: a second step; and a third step of attaching the wiring film completed by the first and second steps onto a base material to complete the probe board.