JPH0542806B2 - - Google Patents
Info
- Publication number
- JPH0542806B2 JPH0542806B2 JP59010544A JP1054484A JPH0542806B2 JP H0542806 B2 JPH0542806 B2 JP H0542806B2 JP 59010544 A JP59010544 A JP 59010544A JP 1054484 A JP1054484 A JP 1054484A JP H0542806 B2 JPH0542806 B2 JP H0542806B2
- Authority
- JP
- Japan
- Prior art keywords
- exposure
- light source
- exposure light
- stages
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Networks & Wireless Communication (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
本発明は、マスクパターンをウエハへ転写する
ための半導体焼付け装置に適用される露光装置に
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an exposure apparatus applied to a semiconductor printing apparatus for transferring a mask pattern onto a wafer.
IC、LSI等の半導体素子を製造するために種々
の型式の半導体焼付け装置が使用されている。こ
の半導体焼付け装置は装置に固有の露光光源を備
え、露光光源からでた光によつて、マスク又はレ
チクルに描かれた回路パターンをフオトレジスタ
を塗布されたウエハへ焼付けるように構成されて
いる。 Various types of semiconductor printing equipment are used to manufacture semiconductor devices such as ICs and LSIs. This semiconductor printing apparatus is equipped with an exposure light source unique to the apparatus, and is configured to use light emitted from the exposure light source to print a circuit pattern drawn on a mask or reticle onto a wafer coated with a photoresistor. .
更に良く知られているとおり半導体焼付け装置
は、露光ステージへのウエハの搬入、マスクとウ
エハの相対的な位置アライメント、露光、露光ス
テージからのウエハの搬送等の種々の作業工程を
繰り返すことによつて、パターンを焼付けたウエ
ハを量産する。 Furthermore, as is well known, semiconductor printing equipment repeats various work steps such as loading the wafer to the exposure stage, aligning the relative position of the mask and wafer, exposing the wafer, and transporting the wafer from the exposure stage. Then, wafers with printed patterns are mass-produced.
つまり露光工程は、ウエハに回路パターンを焼
付けるのに必要な全作業工程の一部にすぎないわ
けである。しかるに現在の半導体焼付け装置にお
いては各装置ごとに露光光源を備え、露光用光を
安定させるためにこの露光光源を常時点灯してお
き、前述したとおり位置アライメント等の露光工
程以外の工程においてはシヤツター等の遮光部材
を使用することによつて露光用光が露光ステージ
上のウエハに達するのを防いでいた。 In other words, the exposure process is only one part of the total process required to print circuit patterns onto a wafer. However, in current semiconductor printing equipment, each device is equipped with an exposure light source, and this exposure light source is always turned on to stabilize the exposure light, and as mentioned above, the shutter is turned off during processes other than the exposure process such as position alignment. By using a light shielding member such as the above, exposure light was prevented from reaching the wafer on the exposure stage.
そのため焼付け装置自体の装備が大がかりなも
のとなつてしまい、特に一般の半導体製造工場で
は焼付け装置が複数台並べて使用されていること
を考慮すれば占有する空間が大きいのは好ましく
ない。これに加えて露光光源が必要な露光工程以
外においても点灯しているためエネルギーの無駄
が大きすぎる。 Therefore, the equipment of the printing apparatus itself becomes large-scale, and it is undesirable that it occupies a large space, especially considering that in general semiconductor manufacturing factories, a plurality of printing apparatuses are used side by side. In addition to this, the exposure light source is turned on even during non-required exposure steps, resulting in a large waste of energy.
それ故本発明の目的は、半導体焼付け装置の軽
装化並びに露光用光の有効利用を可能とする露光
装置を提供することにある。 SUMMARY OF THE INVENTION Therefore, it is an object of the present invention to provide an exposure apparatus that allows a semiconductor printing apparatus to be made lighter and allows effective use of exposure light.
本発明に従うと上述した目的を達成するため
に、共通の露光光源からでた露光用光は複数の露
光ステージへ差し向けられる。このように露光光
源を複数の露光ステージに関して共有すれば、焼
付け装置ごとに別個に露光光源を備える必要はな
くなり焼付け装置の軽装化に役立つ。ここで露光
ステージは一台の焼付け装置に一台備わつている
場合に限らず、一台の焼付け装置に複数の露光ス
テージが備わつている場合も考えられる。この場
合にも複数の露光ステージに対して露光光源を共
有することになる。 According to the present invention, in order to achieve the above-mentioned object, exposure light emitted from a common exposure light source is directed to a plurality of exposure stages. If the exposure light source is shared by a plurality of exposure stages in this way, it is not necessary to provide a separate exposure light source for each printing apparatus, which helps to reduce the weight of the printing apparatus. Here, the case where one exposure stage is provided in one printing apparatus is not limited, and the case in which one printing apparatus is provided with a plurality of exposure stages is also conceivable. In this case as well, the exposure light source is shared by a plurality of exposure stages.
又露光用光を複数の露光ステージへ振り向ける
こととすれば一つの露光光源に対する露光工程時
間が全体的に増加することになるため、露光エネ
ルギーの損失を極めて減少させることも可能であ
る。更に近年半導体製造工場においては焼付け装
置の集中管理体制を進める方向にあるが、露光光
源を共有することによつて焼付け装置の集中管理
も一層容易となるのは明らかである。 Furthermore, if the exposure light is directed to a plurality of exposure stages, the overall exposure process time for one exposure light source will increase, so it is also possible to significantly reduce the loss of exposure energy. Furthermore, in recent years, there has been a trend toward centralized control of printing equipment in semiconductor manufacturing factories, and it is clear that central control of printing equipment becomes easier by sharing an exposure light source.
更に本発明の好ましい特徴に従うと、共通の露
光光源はレーザーを連続発振する。レーザーは光
束の指光性の点において水銀ランプより優れてい
るため、露光光源から露光ステージへ光を導くた
めに、簡単な光学素子を配置するだけで十分であ
る。 Further according to a preferred feature of the invention, the common exposure light source continuously oscillates a laser. Since lasers are superior to mercury lamps in terms of directivity of the light flux, it is sufficient to arrange simple optical elements to guide the light from the exposure light source to the exposure stage.
更に本発明の好ましい特徴に従うと、共通の露
光光源はレーザーをパルス状発振する。露光光源
から露光ステージへ光を導くために簡単な光学素
子を配置するだけで良いのは上述したとおりであ
る。これに加えてレーザーがパルス状発振される
ため、各露光ステージでの露光タイミングに合わ
せてパルス発振させるタイミングを調整すれば露
光エネルギーの損失を完全になくすことができ
る。 According to a further preferred feature of the invention, the common exposure light source pulses the laser. As described above, it is sufficient to simply arrange a simple optical element to guide light from the exposure light source to the exposure stage. In addition, since the laser is oscillated in a pulsed manner, loss of exposure energy can be completely eliminated by adjusting the timing of the pulse oscillation to match the exposure timing of each exposure stage.
更に本発明の好ましい特徴に従うと、露光用光
は露光ステージの各々の露光タイミングに合わせ
て選択的に差し向けられる。焼付け装置のうちの
一台が不測の事故等により焼付け作業を停止させ
る必要が生じた場合、予め設定された露光スケジ
ユールを急に変更しなければならない。このよう
なとき所望の露光ステージへ露光用光を選択的に
導くように制御できれば何ら問題はなくなる。 Further in accordance with a preferred feature of the invention, the exposure light is selectively directed to coincide with the exposure timing of each of the exposure stages. If it becomes necessary to stop the printing operation of one of the printing apparatuses due to an unexpected accident or the like, the preset exposure schedule must be suddenly changed. In such a case, if the exposure light can be controlled so as to be guided selectively to the desired exposure stage, no problem will arise.
次に本発明の好ましい実施例について説明す
る。第1図において参照番号6,7,8,9は露
光ステージを示し、参照番号1はこれらの露光ス
テージ6,7,8,9に共通の露光光源である。
露光光源1からでた光は平面ミラー等の光学素子
2,3,4,5によつて露光ステージ6,7,
8,9へそれぞれ差し向けられる。 Next, preferred embodiments of the present invention will be described. In FIG. 1, reference numbers 6, 7, 8, and 9 indicate exposure stages, and reference number 1 indicates an exposure light source common to these exposure stages 6, 7, 8, and 9.
The light emitted from the exposure light source 1 is passed through optical elements 2, 3, 4, 5 such as plane mirrors to exposure stages 6, 7,
8 and 9 respectively.
図示された光学素子のうち最後尾の光学素子5
以外の光学素子2,3,4は、露光用光を露光ス
テージ6,7,8へ差し向けるための位置と露光
用光を通過させるための位置との間を交互に移動
することができる。 The last optical element 5 among the illustrated optical elements
The other optical elements 2, 3, and 4 can be alternately moved between a position for directing the exposure light to the exposure stages 6, 7, and 8, and a position for passing the exposure light.
光学素子2,3,4の移動は、制御装置10に
よつて所望の露光ステージ6,7,8,9へ光を
導くように制御されるのが好ましい。 Preferably, the movement of the optical elements 2, 3, 4 is controlled by the control device 10 so as to guide the light to a desired exposure stage 6, 7, 8, 9.
本実施例においては最後尾に配置された光学素
子5は、光をステージ9へ差し向けるような位置
に固定してあるが他の光学素子2,3,4と同様
可動にしても良いのは明らかである。 In this embodiment, the optical element 5 placed at the rear end is fixed at a position where it directs the light to the stage 9, but it may be movable like the other optical elements 2, 3, and 4. it is obvious.
露光光源1としては水銀ランプ、レーザー等が
考えられる。水銀ランプからの光束は指向性の点
において劣るため光路を長くすると光束が広がつ
てしまう。そこで露光光源1と露光ステージ6,
7,8,9との間に適当な光学系を配置する必要
はある。この点においてレーザーの場合は光束の
指向性が良いため簡単な構成の光学系で十分であ
る。 As the exposure light source 1, a mercury lamp, a laser, etc. can be considered. The luminous flux from a mercury lamp is inferior in terms of directivity, so if the optical path is lengthened, the luminous flux will spread out. Therefore, the exposure light source 1 and the exposure stage 6,
It is necessary to arrange an appropriate optical system between the elements 7, 8, and 9. In this respect, in the case of a laser, an optical system with a simple configuration is sufficient because the directionality of the light beam is good.
更にレーザーのうちでも発振状態を選択するこ
とによつて、露光エネルギーの損失を減少させる
という本発明の効果は一層顕著なものとなる。近
年パルス状発振のレーザーとしてエキシマレーザ
ーが知られている。この場合各露光ステージにお
ける露光タイミングに合わせてパルスの発振タイ
ミングを制御すれば、露光光源1を常時作動させ
ておいても露光エネルギーを無駄にすることは全
くない。エキシマレーザーは出力が大きいので、
例えばステツプアンドリピート方式のアライナー
(いわゆるステツパー)の場合には露光はフオト
レジストの種類と諸条件にもよるが1シヨツト1
〜数パルスぐらいで十分であり露光時間が短かく
なる。 Furthermore, by selecting the oscillation state of the laser, the effect of the present invention of reducing exposure energy loss becomes even more remarkable. In recent years, excimer lasers have become known as pulsed oscillation lasers. In this case, if the pulse oscillation timing is controlled in accordance with the exposure timing of each exposure stage, no exposure energy is wasted even if the exposure light source 1 is kept operating all the time. Excimer lasers have a large output, so
For example, in the case of a step-and-repeat aligner (so-called stepper), the exposure may be 1 shot or 1, depending on the type of photoresist and various conditions.
~A few pulses are sufficient and the exposure time is shortened.
そのため一台当たりの露光に要する時間は短か
く、共通光源で多数の露光ステージに位置したウ
エハを露光することが可能である。 Therefore, the time required for exposure per device is short, and it is possible to expose wafers located on a large number of exposure stages using a common light source.
第1図は本発明を説明するための図である。
1……露光光源、2,3,4,5……光学素
子、6,7,8,9……露光ステージ、10……
制御装置。
FIG. 1 is a diagram for explaining the present invention. 1... Exposure light source, 2, 3, 4, 5... Optical element, 6, 7, 8, 9... Exposure stage, 10...
Control device.
Claims (1)
ジと、該複数個の露光ステージに共通の光源と、
該共通光源からの光を各露光ステージに向ける光
学系とを有する装置において、前記光学系は前記
共通光源からの光の光路を切り替える可動ミラー
を備え、該可動ミラーにより前記共通光源からの
光を順次各露光ステージに向けることを特徴とす
る露光装置。1 a plurality of exposure stages on which each wafer is placed; a light source common to the plurality of exposure stages;
an optical system that directs light from the common light source to each exposure stage, wherein the optical system includes a movable mirror that switches the optical path of the light from the common light source, and the movable mirror directs the light from the common light source. An exposure apparatus characterized in that it is directed to each exposure stage sequentially.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59010544A JPS60154527A (en) | 1984-01-24 | 1984-01-24 | Exposing device |
US06/690,940 US4653903A (en) | 1984-01-24 | 1985-01-14 | Exposure apparatus |
DE19853502339 DE3502339A1 (en) | 1984-01-24 | 1985-01-24 | Exposure device |
GB08501765A GB2155648B (en) | 1984-01-24 | 1985-01-24 | An exposure apparatus |
GB08723949A GB2195031A (en) | 1984-01-24 | 1987-10-12 | Exposing wafers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59010544A JPS60154527A (en) | 1984-01-24 | 1984-01-24 | Exposing device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60154527A JPS60154527A (en) | 1985-08-14 |
JPH0542806B2 true JPH0542806B2 (en) | 1993-06-29 |
Family
ID=11753198
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59010544A Granted JPS60154527A (en) | 1984-01-24 | 1984-01-24 | Exposing device |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS60154527A (en) |
DE (1) | DE3502339A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2611682B2 (en) * | 1995-02-10 | 1997-05-21 | 株式会社ニコン | Semiconductor manufacturing equipment |
KR100238377B1 (en) * | 1997-05-03 | 2000-01-15 | 김영환 | Optical alignment device and method |
JP2000260684A (en) | 1999-03-08 | 2000-09-22 | Nikon Corp | Aligner and illuminating system |
JP2002299221A (en) | 2001-04-02 | 2002-10-11 | Canon Inc | X-ray aligner |
DE102004013886A1 (en) * | 2004-03-16 | 2005-10-06 | Carl Zeiss Smt Ag | Multiple Exposure Method, Microlithography Projection Exposure System and Projection System |
DE102015212878A1 (en) * | 2015-07-09 | 2017-01-12 | Carl Zeiss Smt Gmbh | Beam control device |
CN105467779A (en) * | 2016-01-04 | 2016-04-06 | 京东方科技集团股份有限公司 | Exposure machine and exposure method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5583232A (en) * | 1978-12-20 | 1980-06-23 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Method and apparatus for x ray exposure |
JPS57169242A (en) * | 1981-04-13 | 1982-10-18 | Hitachi Ltd | X-ray transferring device |
JPS607723A (en) * | 1983-06-28 | 1985-01-16 | Nippon Telegr & Teleph Corp <Ntt> | Plasma x-ray exposing device |
JPS60110121A (en) * | 1983-08-26 | 1985-06-15 | フアインフオ−クス・レントゲンジユステ−メ・ゲ−エムベ−ハ− | X-ray lithographic device |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3732796A (en) * | 1970-07-09 | 1973-05-15 | Thomson Csf | Line tracing systems using laser energy for exposing photo-sensitive substrates |
-
1984
- 1984-01-24 JP JP59010544A patent/JPS60154527A/en active Granted
-
1985
- 1985-01-24 DE DE19853502339 patent/DE3502339A1/en active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5583232A (en) * | 1978-12-20 | 1980-06-23 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Method and apparatus for x ray exposure |
JPS57169242A (en) * | 1981-04-13 | 1982-10-18 | Hitachi Ltd | X-ray transferring device |
JPS607723A (en) * | 1983-06-28 | 1985-01-16 | Nippon Telegr & Teleph Corp <Ntt> | Plasma x-ray exposing device |
JPS60110121A (en) * | 1983-08-26 | 1985-06-15 | フアインフオ−クス・レントゲンジユステ−メ・ゲ−エムベ−ハ− | X-ray lithographic device |
Also Published As
Publication number | Publication date |
---|---|
DE3502339A1 (en) | 1985-08-14 |
JPS60154527A (en) | 1985-08-14 |
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