JPH03240979A - Device for producing semiconductor - Google Patents

Abstract

PURPOSE:To prevent the deterioration of a sealing resin ring, to eliminate the rising of dust and to improve the quality of a semiconductor product in the device with its plasma chamber airtightly sealed by the ring by providing a physical obstruction between the plasma chamber and ring. CONSTITUTION:The plasma chamber 1 of this semiconductor producing device is airtightly sealed by a sealing resin ring 4. A rugged part is provided between the ring 4 and the plasma chamber 1 consisting of a base 2' and a quartz glass 3'. As a result, the arrival of the plasmanon at the ring 4 is prevented, the deterioration is reduced, the rise of dust is eliminated, and hence the semiconductor product 8 is not contaminated.

Description

[Detailed Description of the Invention] [Summary] Regarding a plasma generator, a physical barrier is provided between the plasma chamber and the sealing resin ring in order to prevent the sealing resin ring from deteriorating due to plasma. Configure.

[Industrial application field]

The present invention relates to a semiconductor manufacturing apparatus (particularly, a semiconductor manufacturing apparatus having a plasma chamber for oxygen plasma, etc. [Prior Art]) An example of a conventional plasma generating apparatus is shown in FIG.

This plasma generator is a resist ashing device, and the plasma chamber 1 is defined by a base 2 and quartz glass 3.
Alternatively, it is hermetically sealed using a sealing resin ring 4 made of resin such as silicone.

5 is an electrode, 6 is a high frequency power source, 7 is a sample stage, and 8 is a wafer to be processed.

[Problem to be solved by the invention]

In recent semiconductor manufacturing processes, fine patterning is required, and therefore it is necessary to improve the cleanliness.

However, the pyton and silicone resin of the sealing resin ring exposed to plasma non-container deteriorates, causing dust generation. Conventional plasma atmosphere gases are halogen-based, and countermeasures have been taken to prevent this, but oxygen plasma is used in the assong device shown in Figure 1, and conventional plasma generators have no countermeasures against this. It seems that dust generation cannot be avoided because the amount is not sufficient.

[Means to solve the problem]

In order to achieve the above object, the present invention provides a semiconductor manufacturing apparatus in which a plasma chamber is hermetically sealed with a sealing resin ring.
Provided is a semiconductor manufacturing apparatus characterized in that a physical barrier is provided between a plasma chamber and a sealing resin ring to prevent deterioration of the sealing resin ring due to plasma.

[For production]

By providing a physical barrier between the plasma chamber and the sealing resin ring, the sealing resin ring is less likely to be exposed to plasma particles, and dust generation is reduced.

〔Example〕

Figure 2 is an enlarged view of the sealed part (section A in the figure) with the sealing resin ring of the plasma generator shown in Figure 1. A quartz glass 3 having a bottom surface is fastened with a sealing resin ring 4 interposed therebetween. The diameter of the ring 4 is generally 5 to 10 mmφ, but a gap corresponding to the volume (thickness) of the sealing resin ring 4 is created between the quartz glass 3 and the base 2, and the plasma non-contains the sealing resin through this gap. It touches ring 4 and causes it to deteriorate.

FIG. 3 shows a device similar to that in FIG. 2 but improved in accordance with the present invention. Base 2' and quartz glass 3' plasma chamber (
An uneven portion is provided between the left side of the figure and the sealing resin ring 4 to make it difficult for plasma particles to reach the sealing resin ring 4.

It is clear that the type and number of physical obstacles to plasmanon are not limited to the example shown in FIG.

According to the present invention, dust generation is reduced compared to conventional plasma ashing equipment, and semiconductor contamination is prevented.

Note that it is clear that the present invention can be applied to various plasma generation devices.

〔Effect of the invention〕

In the semiconductor manufacturing apparatus of the present invention, the hermetic sealing ring of the plasma chamber is prevented from deteriorating and generating dust due to exposure to plasma, contributing to improving the quality of semiconductors.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram of a plasma generator, FIG. 2 is a diagram showing a conventional hermetic sealing structure, and FIG. 3 is a diagram showing an hermetic sealing structure according to the present invention. DESCRIPTION OF SYMBOLS 1... Plasma chamber, 2... Base, 3... Quartz glass, 4... Sealing resin ring, 5... Electrode,
6... High frequency power supply, 7... Sample stage,
8...Wafer. Ashing equipment No. 1 River sealing section No. 20 Sealing section Hatake Mita

Claims (1)

[Claims] 1. In semiconductor manufacturing equipment in which a plasma chamber is hermetically sealed with a sealing resin ring, a physical barrier is provided between the plasma chamber and the sealing resin ring to prevent deterioration of the sealing resin ring due to plasma. semiconductor manufacturing equipment.