JP2002252376A - Surface mount type light emitting diode and method of manufacturing the same - Google Patents
Surface mount type light emitting diode and method of manufacturing the sameInfo
- Publication number
- JP2002252376A JP2002252376A JP2001048980A JP2001048980A JP2002252376A JP 2002252376 A JP2002252376 A JP 2002252376A JP 2001048980 A JP2001048980 A JP 2001048980A JP 2001048980 A JP2001048980 A JP 2001048980A JP 2002252376 A JP2002252376 A JP 2002252376A
- Authority
- JP
- Japan
- Prior art keywords
- light
- chip
- resin layer
- led
- sealing portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
(57)【要約】
【課題】 LEDチップの金属線接続部分等の信頼性を
確保することができるとともに、LEDの発光波長を均
一化することができ、LEDチップの上面からの放射光
と側面からの放射光との色調ムラを低減することができ
る表面実装型LED及びその製造方法を提供する。
【解決手段】 基板1上に配されたLEDチップ3と、
LEDチップ3を封止するチップ封止部5a、及びチッ
プ封止部5aの周囲に、溝部5bを介し、その高さをチ
ップ封止部5aの高さより高くして設けられたチップ封
止部包囲部5cを有した第1透光性樹脂層5と、蛍光剤
を含み、チップ封止部包囲部5cの内側に形成された第
2透光性樹脂層6とを備える。
(57) [Summary] [PROBLEMS] To ensure the reliability of a metal wire connection portion of an LED chip, to make uniform the emission wavelength of the LED, and to radiate light from the upper surface of the LED chip to the side surface. Provided are a surface-mounted LED capable of reducing unevenness in color tone with light emitted from the LED, and a method for manufacturing the same. SOLUTION: An LED chip 3 arranged on a substrate 1;
A chip sealing portion 5a for sealing the LED chip 3, and a chip sealing portion provided around the chip sealing portion 5a with a height higher than the height of the chip sealing portion 5a via a groove 5b. A first light-transmitting resin layer 5 having an enclosing portion 5c and a second light-transmitting resin layer 6 containing a fluorescent agent and formed inside the chip sealing portion enclosing portion 5c are provided.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、表面実装型発光ダ
イオード及びその製造方法に関する。[0001] 1. Field of the Invention [0002] The present invention relates to a surface mount type light emitting diode and a method of manufacturing the same.
【0002】[0002]
【従来の技術】発光装置である発光ダイオード(以下、
LEDという)は、小型であって、効率が良く鮮やかな
色の発光を行うことができ、駆動特性に優れ、振動及び
ON/OFF点灯の繰り返しに強いという特徴を有す
る。そのため、各種インジケータ及び種々の光源として
用いられている。2. Description of the Related Art Light emitting diodes (hereinafter, referred to as light emitting devices).
LEDs) are small in size, can emit light of a bright color with good efficiency, have excellent driving characteristics, and are resistant to vibration and repeated ON / OFF lighting. Therefore, it is used as various indicators and various light sources.
【0003】従来の表面実装型LEDの製造において
は、まず、ガラスエポキシ樹脂等の基板にLEDチップ
を銀ペースト等で実装し、そのLEDチップに備えられ
た電極と基板に備えられた電極とを金線等の金属線で接
続する。次に、LEDチップからの放射光を波長変換す
るための蛍光剤を混和したエポキシ樹脂分散媒をディッ
プする等し、硬化させてLEDチップを封止し、チップ
封止層を形成する。その後、チップ封止層より大きい凹
部が所定間隔を隔てて複数設けられた金型を、各凹部内
に各チップ封止層を入れた状態でセットし、各凹部と基
板との空間にエポキシ樹脂を注入し、硬化させて、チッ
プ封止層を覆う封止レンズ層を形成する。In manufacturing a conventional surface mount type LED, first, an LED chip is mounted on a substrate such as a glass epoxy resin using a silver paste or the like, and an electrode provided on the LED chip and an electrode provided on the substrate are connected. Connect with a metal wire such as a gold wire. Next, an epoxy resin dispersion medium mixed with a fluorescent agent for converting the wavelength of light emitted from the LED chip is dipped or the like, and cured to seal the LED chip, thereby forming a chip sealing layer. After that, a mold having a plurality of recesses larger than the chip sealing layer provided at predetermined intervals is set with each chip sealing layer placed in each recess, and epoxy resin is set in a space between each recess and the substrate. Is injected and cured to form a sealing lens layer covering the chip sealing layer.
【0004】[0004]
【発明が解決しようとする課題】しかしながら、上述の
従来の表面実装型LEDの製造方法においては、チップ
封止層を形成する際に、蛍光剤を分散させたエポキシ樹
脂分散媒をプレディップする等、各LEDチップ毎に所
定量滴下する工程が必要であるので、製造工程が煩雑で
あるという問題があった。また、蛍光剤がLEDチップ
表面を直接覆うので、LEDチップの金線接続部分等の
信頼性が必要とされる部分に蛍光剤が接触して信頼性が
損なわれるという問題があった。そして、量産時に、各
LEDのチップ封止層の形状を均一にすることが出来
ず、各チップ封止層の蛍光剤の含有量をコントロールす
ることが出来なかった。また、各チップ封止層の厚みを
均一にすることが出来ず、蛍光剤の分布が不均一である
ので、波長変換効率に差が生じ、LEDの色調にムラが
あるという問題もあった。However, in the above-mentioned conventional method of manufacturing a surface mount type LED, when forming a chip sealing layer, an epoxy resin dispersion medium in which a fluorescent agent is dispersed is pre-dip or the like. Since a step of dropping a predetermined amount for each LED chip is required, there is a problem that the manufacturing process is complicated. In addition, since the fluorescent agent directly covers the LED chip surface, there is a problem that the fluorescent agent comes into contact with a portion where reliability is required, such as a gold wire connection portion of the LED chip, and the reliability is impaired. Then, during mass production, the shape of the chip sealing layer of each LED could not be made uniform, and the content of the fluorescent agent in each chip sealing layer could not be controlled. Further, since the thickness of each chip sealing layer cannot be made uniform and the distribution of the fluorescent agent is not uniform, there is a problem that a difference occurs in the wavelength conversion efficiency and the color tone of the LED is uneven.
【0005】さらに、LEDチップを蛍光剤を含まない
透光性樹脂により封止し、チップ封止層を形成した後、
このチップ封止層の上面を蛍光剤を混合したシート状の
透光性樹脂により覆ったLEDもあるが、この場合、チ
ップ封止層の上面からのLEDチップの放射光と側面か
らの放射光とで色調にムラが生じるという問題があっ
た。[0005] Further, after the LED chip is sealed with a translucent resin containing no fluorescent agent to form a chip sealing layer,
Some LEDs have the upper surface of the chip sealing layer covered with a sheet-like translucent resin mixed with a fluorescent agent. In this case, the light emitted from the LED chip from the upper surface of the chip sealing layer and the light emitted from the side surface In this case, there is a problem that the color tone becomes uneven.
【0006】本発明は、斯かる事情に鑑みてなされたも
のであり、LEDチップに対応させて設けられたチップ
封止部と、該チップ封止部の周囲に、高さをチップ封止
部の高さより高くして設けられたチップ封止部包囲部と
を有した第1透光性樹脂層と、チップ封止部包囲部の内
側に形成した第2透光性樹脂層とを備えることにより、
LEDチップの金属線接続部分等の信頼性を確保するこ
とができるとともに、蛍光剤を含む第2透光性樹脂層の
厚みを均一にして、LEDの発光波長を均一化すること
ができ、LEDチップの上面からの放射光と側面からの
放射光との色調ムラを低減することができる表面実装型
LEDを提供することを目的とする。The present invention has been made in view of the above circumstances, and has a chip sealing portion provided corresponding to an LED chip, and a height around the chip sealing portion. A first light-transmitting resin layer having a chip sealing portion surrounding portion provided at a height higher than the height of the first light-transmitting resin layer, and a second light-transmitting resin layer formed inside the chip sealing portion surrounding portion. By
It is possible to ensure the reliability of the metal wire connection portion of the LED chip and the like, and to make the thickness of the second translucent resin layer containing the fluorescent agent uniform, thereby making the emission wavelength of the LED uniform. It is an object of the present invention to provide a surface-mounted LED that can reduce color tone unevenness between light emitted from the upper surface of a chip and light emitted from a side surface.
【0007】また、本発明は、チップ封止部に対応する
凹部を中央部に有した凸状部が所定間隔を隔てて複数設
けられた型を基板上に配し、透光性樹脂を流し込んで第
1透光性樹脂層を形成し、前記凸状部によって形成され
た第1透光性樹脂層の凹みに第2透光性樹脂層を形成す
ることにより、製造工程が簡単になり、量産性が高くな
るとともに、蛍光剤を含む第2透光性樹脂層の厚みを容
易に均一化することができ、LEDチップの上面からの
放射光の色調と側面からの放射光の色調とを均一化する
ことができる表面実装型LEDの製造方法を提供するこ
とを目的とする。Further, according to the present invention, a mold having a plurality of convex portions having a concave portion corresponding to a chip sealing portion at a central portion provided at predetermined intervals is arranged on a substrate, and a transparent resin is poured. By forming the first light-transmitting resin layer in the first light-transmitting resin layer and forming the second light-transmitting resin layer in the recess of the first light-transmitting resin layer formed by the convex portion, the manufacturing process is simplified, As the mass productivity increases, the thickness of the second light-transmitting resin layer containing the fluorescent agent can be easily made uniform, and the color tone of the light emitted from the upper surface of the LED chip and the color tone of the light emitted from the side surface can be reduced. It is an object of the present invention to provide a method for manufacturing a surface-mounted LED that can be made uniform.
【0008】[0008]
【課題を解決するための手段】第1発明の表面実装型発
光ダイオードは、基板上に配された発光ダイオードチッ
プと、前記発光ダイオードチップを封止するチップ封止
部、及び該チップ封止部の周囲に、その高さを前記チッ
プ封止部の高さより高くして設けられたチップ封止部包
囲部を有した第1透光性樹脂層と、蛍光剤を含み、前記
チップ封止部包囲部の内側に形成された第2透光性樹脂
層とを備えることを特徴とする。According to a first aspect of the present invention, there is provided a surface mount type light emitting diode, a light emitting diode chip disposed on a substrate, a chip sealing portion for sealing the light emitting diode chip, and the chip sealing portion. A first translucent resin layer having a chip sealing portion surrounding portion provided at a height higher than the height of the chip sealing portion, and a fluorescent agent, A second translucent resin layer formed inside the surrounding portion.
【0009】第1発明においては、第1透光性樹脂層が
蛍光剤を含んでいないので、LEDチップの金属線接続
部分等の信頼性を確保することができる。そして、チッ
プ封止部包囲部の内側に蛍光剤を混合した第2透光性樹
脂を形成するので、第1透光性樹脂層の形状により第2
透光性樹脂層の形状が定まる。従って、第2透光性樹脂
層の厚みを均一にすることができ、蛍光剤の分布が均一
になるので、波長変換効率が均一になり、LEDの発光
波長が均一化される。そして、LEDチップの上方だけ
でなく、側方も第2透光性樹脂層で覆われているので、
LEDチップの上面からの放射光と側面からの放射光と
の色調ムラが低減する。In the first invention, since the first light-transmitting resin layer does not contain a fluorescent agent, the reliability of the metal wire connection portion of the LED chip can be ensured. Then, since the second translucent resin mixed with the fluorescent agent is formed inside the surrounding portion of the chip sealing portion, the second translucent resin is formed depending on the shape of the first translucent resin layer.
The shape of the translucent resin layer is determined. Therefore, the thickness of the second translucent resin layer can be made uniform, and the distribution of the fluorescent agent becomes uniform, so that the wavelength conversion efficiency becomes uniform and the emission wavelength of the LED becomes uniform. Then, not only above the LED chip but also the sides are covered with the second translucent resin layer,
The color tone unevenness between the light emitted from the upper surface and the light emitted from the side surface of the LED chip is reduced.
【0010】第2発明の表面実装型発光ダイオードの製
造方法は、基板上に発光ダイオードチップを搭載する工
程と、基板上に設けられた電極と前記発光ダイオードチ
ップに備えられた電極とを金属線により接続する工程
と、前記発光ダイオードチップを透光性樹脂により封止
してチップ封止部を形成する工程と、前記チップ封止部
を蛍光剤を含む透光性樹脂により覆う工程とを含む表面
実装型発光ダイオードの製造方法において、前記チップ
封止部に対応する凹部を中央部に有した凸状部が所定間
隔を隔てて複数設けられた型を、各凹部を各発光ダイオ
ードチップに対向させた状態で、前記基板の上方に所定
間隔を隔てて配する工程と、前記型と前記基板との間に
透光性樹脂を流し込む工程と、前記透光性樹脂を硬化さ
せ、前記型を開いて第1透光性樹脂層を形成する工程
と、前記凸状部によって形成された第1透光性樹脂層の
凹みに、蛍光剤を含む透光性樹脂を注入する工程と、前
記透光性樹脂を硬化させて第2透光性樹脂層を形成する
工程とを含むことを特徴とする。According to a second aspect of the present invention, there is provided a method of manufacturing a surface mount type light emitting diode, comprising the steps of: mounting a light emitting diode chip on a substrate; and connecting an electrode provided on the substrate and an electrode provided on the light emitting diode chip to a metal wire. And a step of sealing the light emitting diode chip with a translucent resin to form a chip sealing portion, and a step of covering the chip sealing portion with a translucent resin containing a fluorescent agent. In the method for manufacturing a surface mount type light emitting diode, a mold in which a plurality of convex portions having a concave portion corresponding to the chip sealing portion in the center portion are provided at predetermined intervals, and each concave portion is opposed to each light emitting diode chip. In this state, a step of disposing a predetermined distance above the substrate, a step of pouring a translucent resin between the mold and the substrate, and curing the translucent resin, Open 1) a step of forming a light-transmitting resin layer, a step of injecting a light-transmitting resin containing a fluorescent agent into a recess of the first light-transmitting resin layer formed by the convex portion, And forming a second light-transmitting resin layer by curing the resin.
【0011】第2発明においては、型と基板との間に透
光性樹脂を流し込んで第1透光性樹脂層を形成し、この
第1透光性樹脂層の凹みに、蛍光剤を含む透光性樹脂を
注入して第2透光性樹脂層を形成するので、製造工程が
簡単になり、量産性が向上する。また、第1透光性樹脂
層の凹みに第2透光性樹脂層を形成するので、前記凹み
に基づき各LEDの第2透光性樹脂層の形状が同一にな
り、各第2透光性樹脂層の蛍光剤の含有量が均一化され
る。さらに、各第2透光性樹脂層においても、前記凹み
に基づき厚みが容易に均一化されて蛍光剤の分布が均一
になり、LEDの発光波長が均一化される。そして、前
記凹みの形状を、第2透光性樹脂層がLEDチップの側
面部を充分にカバーできる形状にすることで、LEDチ
ップの上面からの放射光の色調と側面からの放射光の色
調とを均一化することができる。従って、第2発明の表
面実装型発光ダイオードの製造方法により、品質及び性
能が向上した表面実装型発光ダイオードを得ることが出
来る。In the second invention, a first translucent resin layer is formed by pouring a translucent resin between the mold and the substrate, and the first translucent resin layer includes a fluorescent agent in a recess. Since the second translucent resin layer is formed by injecting the translucent resin, the manufacturing process is simplified and the mass productivity is improved. Further, since the second light-transmitting resin layer is formed in the depression of the first light-transmitting resin layer, the shape of the second light-transmitting resin layer of each LED becomes the same based on the depression, and each second light-transmitting resin layer becomes the same. The content of the fluorescent agent in the conductive resin layer is made uniform. Further, also in each of the second light-transmitting resin layers, the thickness is easily made uniform based on the recess, the distribution of the fluorescent agent is made uniform, and the emission wavelength of the LED is made uniform. The shape of the recess is such that the second translucent resin layer can sufficiently cover the side surface of the LED chip, so that the color tone of the light emitted from the upper surface of the LED chip and the color tone of the light emitted from the side surface of the LED chip. And can be made uniform. Therefore, by the method for manufacturing a surface-mounted light-emitting diode according to the second invention, a surface-mounted light-emitting diode having improved quality and performance can be obtained.
【0012】[0012]
【発明の実施の形態】以下、本発明をその実施の形態を
示す図面に基づいて、具体的に説明する。図1は、本発
明の実施の形態に係る表面実装型LEDの構造を示す平
面図であり、図2はそのII-II 線断面図である。図中、
1は基板である。ガラスエポキシ樹脂等からなる基板1
の両端には、外部回路に接続するための外部電極2,2
が設けられている。一方の外部電極2の中央部には、基
板1の中央側に張り出させてチップ搭載部2aが設けら
れており、その端部に、GaN系化合物半導体を発光層
として有するLEDチップ3が実装されている。他方の
外部電極2には、チップ搭載部2aに対向させて内部電
極2bが設けられている。LEDチップ3の一方の電極
は、金線4によりチップ搭載部2aと、他方の電極は金
線4により内部電極2bと接続されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to the drawings showing the embodiments. FIG. 1 is a plan view showing the structure of a surface-mounted LED according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line II-II. In the figure,
1 is a substrate. Substrate 1 made of glass epoxy resin, etc.
Are connected to external electrodes 2 and 2 for connection to an external circuit.
Is provided. A chip mounting portion 2a is provided at the center of one of the external electrodes 2 so as to protrude toward the center of the substrate 1, and an LED chip 3 having a GaN-based compound semiconductor as a light emitting layer is mounted at an end thereof. Have been. On the other external electrode 2, an internal electrode 2b is provided so as to face the chip mounting portion 2a. One electrode of the LED chip 3 is connected to the chip mounting portion 2 a by a gold wire 4, and the other electrode is connected to the internal electrode 2 b by a gold wire 4.
【0013】LEDチップ3は、エポキシ樹脂等の透光
性樹脂からなる第1透光性樹脂層5により封止されてい
る。第1透光性樹脂層5は、直接LEDチップ3を封止
するチップ封止部5aと、溝部5bを介し、チップ封止
部5aの周囲に、その高さをチップ封止部5aの高さよ
り高くして設けられたチップ封止部包囲部5cとからな
る。The LED chip 3 is sealed with a first light transmitting resin layer 5 made of a light transmitting resin such as an epoxy resin. The first translucent resin layer 5 has a height around the chip sealing portion 5a via the chip sealing portion 5a for directly sealing the LED chip 3 and the groove portion 5b, and the height of the chip sealing portion 5a. And a chip sealing portion surrounding portion 5c provided at a height higher than the height.
【0014】チップ封止部包囲部5cの内側であって、
チップ封止部5aの上方と側方とに相当する部分には、
蛍光剤を含むエポキシ樹脂等の透光性樹脂層からなる第
2透光性樹脂層6が形成されている。蛍光剤は、LED
チップ3の発光波長を他の波長に変換できる、蛍光塗
料、蛍光顔料、蛍光体等の蛍光物質である。[0014] Inside the chip enclosing portion surrounding portion 5c,
In portions corresponding to the upper side and the side of the chip sealing portion 5a,
A second light-transmitting resin layer 6 made of a light-transmitting resin layer such as an epoxy resin containing a fluorescent agent is formed. The fluorescent agent is LED
A fluorescent substance such as a fluorescent paint, a fluorescent pigment, or a fluorescent substance, which can convert the emission wavelength of the chip 3 to another wavelength.
【0015】本発明の表面実装型LEDにおいては、第
1透光性樹脂層5が蛍光剤を含んでいないので、LED
チップ3の金線4接続部分等の信頼性を確保することが
できる。そして、チップ封止部包囲部5cの内側に、蛍
光剤を混合した第2透光性樹脂6を形成するので、第1
透光性樹脂層5の形状により第2透光性樹脂層6の形状
が定まる。従って、第2透光性樹脂層6の厚みを均一に
することができ、蛍光剤の分布が均一になるので、波長
変換効率が均一になり、LEDの発光波長が均一化され
る。そして、LEDチップ3の上方だけでなく、側方も
第2透光性樹脂層6で覆われているので、LEDチップ
3の上面からの放射光と側面からの放射光との色調ムラ
が低減する。In the surface mount type LED of the present invention, since the first translucent resin layer 5 does not contain a fluorescent agent,
The reliability of the portion of the chip 3 where the gold wire 4 is connected can be ensured. Then, the second translucent resin 6 mixed with the fluorescent agent is formed inside the chip sealing portion surrounding portion 5c, so that the first
The shape of the second light-transmitting resin layer 6 is determined by the shape of the light-transmitting resin layer 5. Therefore, the thickness of the second translucent resin layer 6 can be made uniform, and the distribution of the fluorescent agent becomes uniform, so that the wavelength conversion efficiency becomes uniform and the emission wavelength of the LED becomes uniform. Further, since not only the upper side but also the side of the LED chip 3 is covered with the second translucent resin layer 6, the color tone unevenness of the radiated light from the upper surface and the radiated light from the side surface of the LED chip 3 is reduced. I do.
【0016】以下、本発明の表面実装型LEDの製造方
法について説明する。本発明の表面実装型LEDは、基
板上に複数個製造された後、カットにより個別に分離さ
れる。基板1の両端には、その延在方向を基板1の長手
方向と一致させて電極2,2が設けられており、一方の
電極2には、所定間隔を隔てて、チップ搭載部2a,2
a…が、他方の電極2にはチップ搭載部2a,2a…と
対向する内部電極2b,2b…が設けられている。基板
1上の各チップ搭載部2a,2a…にLEDチップ3,
3…を銀ペースト等で実装し、各LEDチップ3の一方
の電極をチップ搭載部2aと、他方の電極を内部電極2
bと、金線4,4により各々接続する。Hereinafter, a method of manufacturing a surface-mounted LED according to the present invention will be described. After a plurality of the surface mount LEDs of the present invention are manufactured on a substrate, they are individually separated by cutting. Electrodes 2 and 2 are provided at both ends of the substrate 1 so that the extending direction thereof coincides with the longitudinal direction of the substrate 1. One electrode 2 is provided at predetermined intervals with chip mounting portions 2 a and 2.
are provided on the other electrode 2 with internal electrodes 2b, 2b,... facing the chip mounting portions 2a, 2a,. Each of the chip mounting portions 2a, 2a,.
3 are mounted with silver paste or the like, one electrode of each LED chip 3 is a chip mounting portion 2a, and the other electrode is an internal electrode 2
b and gold wires 4 and 4, respectively.
【0017】図3は、基板1の電極2の延在方向におけ
る断面図であり、以下の製造工程を示す断面図である。
まず、チップ封止部5aに対応する凹部7aを中央部に
有した凸状部7bが所定間隔を隔てて複数設けられた金
属製又はエポキシ樹脂製の型7を、各凹部7aを各LE
Dチップ3に対向させた状態で、基板1の上方に所定間
隔を隔てて配する(図3(a))。FIG. 3 is a cross-sectional view of the substrate 1 in the direction in which the electrodes 2 extend, and is a cross-sectional view illustrating the following manufacturing process.
First, a metal or epoxy resin mold 7 in which a plurality of convex portions 7b having a concave portion 7a corresponding to the chip sealing portion 5a at a central portion are provided at predetermined intervals, and each concave portion 7a is
In a state of facing the D chip 3, it is arranged above the substrate 1 at a predetermined interval (FIG. 3A).
【0018】次に、型7と基板1との間に透光性樹脂を
流し込み、この透光性樹脂を硬化させ、型7を開いて第
1透光性樹脂層5を形成する(図3(b))。そして、
凸状部7bによって形成された第1透光性樹脂層5の凹
みに、蛍光剤を含む透光性樹脂を注入し、この透光性樹
脂を硬化させて第2透光性樹脂層6を形成する。その
後、所定の幅にカットし、個別に分離された表面実装型
LEDを得る(図3(c))。LEDチップ3の発光層
がGaN系化合物半導体であって、青色の光を発光する
場合、蛍光剤としては、銅で付活された硫化カドミ亜鉛
やセリウムで付活されたイットリウム・アルミニウム・
ガーネット系蛍光体等の青色発光を吸収して黄色系を発
光する蛍光体が挙げられる。この混色により表面実装型
LEDは白色の光を発することになる。Next, a light-transmitting resin is poured between the mold 7 and the substrate 1, the light-transmitting resin is cured, and the mold 7 is opened to form the first light-transmitting resin layer 5 (FIG. 3). (B)). And
A translucent resin containing a fluorescent agent is injected into the recess of the first translucent resin layer 5 formed by the protruding portion 7b, and the translucent resin is cured to form the second translucent resin layer 6. Form. Thereafter, the wafer is cut into a predetermined width to obtain individually separated surface-mounted LEDs (FIG. 3C). When the light emitting layer of the LED chip 3 is a GaN-based compound semiconductor and emits blue light, the fluorescent agent may be cadmium zinc sulfide activated by copper or yttrium aluminum activated by cerium.
A phosphor that absorbs blue light and emits yellow light, such as a garnet-based phosphor, may be used. Due to this color mixture, the surface-mounted LED emits white light.
【0019】以上のように、本発明の表面実装型LED
の製造方法においては、型7と基板1との間に透光性樹
脂を流し込んで第1透光性樹脂層5を形成し、この第1
透光性樹脂層5の凹みに、蛍光剤を含む透光性樹脂を注
入して第2透光性樹脂層6を形成するので、製造工程が
簡単になる。そして、前記凹みにより各LEDの第2透
光性樹脂層6の形状が同一になり、各LEDの蛍光剤の
含有量を均一にすることが出来、量産性が向上する。ま
た、第1透光性樹脂層5の凹みに第2透光性樹脂層6を
形成するので、前記凹みに基づき第2透光性樹脂層6の
厚みを容易に均一化することができ、蛍光剤の分布を均
一にして、LEDの発光波長を均一化することができ
る。さらに、前記凹みの形状を、第2透光性樹脂層6が
LEDチップ3の側面部を充分にカバーできる形状にす
ることで、LEDチップ3の上面からの放射光と側面か
らの放射光との色調ムラを低減することができる。As described above, the surface mount type LED of the present invention
In the manufacturing method of (1), a first light-transmitting resin layer 5 is formed by pouring a light-transmitting resin between the mold 7 and the substrate 1.
Since the second light-transmitting resin layer 6 is formed by injecting a light-transmitting resin containing a fluorescent agent into the recess of the light-transmitting resin layer 5, the manufacturing process is simplified. Then, the shape of the second translucent resin layer 6 of each LED becomes the same due to the recess, the content of the fluorescent agent of each LED can be made uniform, and mass productivity is improved. Further, since the second light-transmitting resin layer 6 is formed in the depression of the first light-transmitting resin layer 5, the thickness of the second light-transmitting resin layer 6 can be easily made uniform based on the depression, By making the distribution of the fluorescent agent uniform, the emission wavelength of the LED can be made uniform. Furthermore, by making the shape of the recesses such that the second translucent resin layer 6 can sufficiently cover the side surface of the LED chip 3, the light emitted from the upper surface of the LED chip 3 and the light emitted from the side surface are reduced. Can be reduced.
【0020】なお、前記実施の形態においては、GaN
系のLEDチップ3を用いた場合につき説明しているが
これに限定されるものではなく、SiC系、ZnSe
系、GaAs系、GaAlAs系及びZnO系等の他の
色の光を発するLEDチップ3を用いてもよく、この場
合、LEDチップ3の発光色に対応させて蛍光剤を選択
する。In the above embodiment, GaN
The case where the LED chip 3 of the system is used has been described, but the present invention is not limited to this.
LED chips 3 that emit light of other colors, such as GaAs, GaAs, GaAlAs, and ZnO, may be used. In this case, a fluorescent agent is selected according to the emission color of the LED chips 3.
【0021】[0021]
【発明の効果】以上、詳述したように、第1発明による
場合は、第1透光性樹脂層が蛍光剤を含んでいないの
で、LEDチップの金属線接続部分等の信頼性を確保す
ることができる。そして、チップ封止部包囲部の内側に
蛍光剤を混合した第2透光性樹脂を形成するので、第1
透光性樹脂層の形状により第2透光性樹脂層の形状が定
まる。従って、第2透光性樹脂層の厚みを均一にするこ
とができ、蛍光剤の分布が均一になるので、波長変換効
率が均一になり、LEDの発光波長が均一化される。そ
して、LEDチップの上方だけでなく、側方も第2透光
性樹脂層で覆われているので、LEDチップの上面から
の放射光と側面からの放射光との色調ムラが低減する。As described above in detail, in the case of the first invention, since the first translucent resin layer does not contain a fluorescent agent, the reliability of the metal wire connection portion of the LED chip is ensured. be able to. Then, since the second translucent resin mixed with the fluorescent agent is formed inside the surrounding portion of the chip sealing portion, the first translucent resin is formed.
The shape of the second light-transmitting resin layer is determined by the shape of the light-transmitting resin layer. Therefore, the thickness of the second translucent resin layer can be made uniform, and the distribution of the fluorescent agent becomes uniform, so that the wavelength conversion efficiency becomes uniform and the emission wavelength of the LED becomes uniform. Since not only the upper side but also the side of the LED chip is covered with the second translucent resin layer, the color tone unevenness of the light emitted from the upper surface and the light emitted from the side surface of the LED chip is reduced.
【0022】第2発明による場合は、型と基板との間に
透光性樹脂を流し込んで第1透光性樹脂層を形成し、こ
の第1透光性樹脂層の凹みに、蛍光剤を含む透光性樹脂
を注入して第2透光性樹脂層を形成するので、製造工程
が簡単になり、蛍光剤の含有量のコントロールも容易で
あり、量産性が向上する。また、第1透光性樹脂層の凹
みに第2透光性樹脂層を形成するので、前記凹みに基づ
き各LEDの第2透光性樹脂層の形状が同一になり、各
第2透光性樹脂層の蛍光剤の含有量が均一になる。さら
に、各第2透光性樹脂層においても厚みが容易に均一化
されるので、蛍光剤の分布が均一になり、LEDの発光
波長が均一化される。そして、前記凹みの形状を、第2
透光性樹脂層がLEDチップの側面部を充分にカバーで
きる形状にすることで、LEDチップの上面からの放射
光と側面からの放射光との色調ムラを低減することがで
きる。従って、第2発明の方法により、品質及び性能が
向上した表面実装型LEDを得ることが出来る。In the case of the second invention, a light-transmitting resin is poured between the mold and the substrate to form a first light-transmitting resin layer, and a fluorescent agent is filled in the recess of the first light-transmitting resin layer. Since the second translucent resin layer is formed by injecting the translucent resin containing, the manufacturing process is simplified, the content of the fluorescent agent is easily controlled, and mass productivity is improved. Further, since the second light-transmitting resin layer is formed in the depression of the first light-transmitting resin layer, the shape of the second light-transmitting resin layer of each LED becomes the same based on the depression, and each second light-transmitting resin layer becomes the same. The content of the fluorescent agent in the conductive resin layer becomes uniform. Further, since the thickness of each of the second translucent resin layers is also easily made uniform, the distribution of the fluorescent agent is made uniform, and the emission wavelength of the LED is made uniform. Then, the shape of the recess is changed to the second shape.
By forming the transparent resin layer into a shape that can sufficiently cover the side surface of the LED chip, it is possible to reduce color tone unevenness between light emitted from the upper surface of the LED chip and light emitted from the side surface. Therefore, a surface-mounted LED with improved quality and performance can be obtained by the method of the second invention.
【図1】本発明の実施の形態に係る表面実装型LEDの
構造を示す平面図である。FIG. 1 is a plan view showing a structure of a surface mount LED according to an embodiment of the present invention.
【図2】図1のII−II線断面図である。FIG. 2 is a sectional view taken along line II-II of FIG.
【図3】本発明の実施の形態に係る表面実装型LEDの
製造工程を示す断面図である。FIG. 3 is a cross-sectional view illustrating a manufacturing process of the surface-mounted LED according to the embodiment of the present invention.
1 基板 2 電極 3 LEDチップ 4 金線 5 第1透光性樹脂層 5a チップ封止部 5b 溝部 5c チップ封止部包囲部 6 第2透光性樹脂層 DESCRIPTION OF SYMBOLS 1 Substrate 2 Electrode 3 LED chip 4 Gold wire 5 First translucent resin layer 5a Chip sealing part 5b Groove part 5c Chip sealing part surrounding part 6 Second translucent resin layer
───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 4M109 AA02 BA04 CA21 DB15 GA01 5F041 AA11 AA14 AA42 AA43 CA35 DA07 DA12 DA17 DA43 DA56 DA58 DA62 DA92 5F061 AA02 BA04 CA21 FA01 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4M109 AA02 BA04 CA21 DB15 GA01 5F041 AA11 AA14 AA42 AA43 CA35 DA07 DA12 DA17 DA43 DA56 DA58 DA62 DA92 5F061 AA02 BA04 CA21 FA01
Claims (2)
と、 前記発光ダイオードチップを封止するチップ封止部、及
び該チップ封止部の周囲に、その高さを前記チップ封止
部の高さより高くして設けられたチップ封止部包囲部を
有した第1透光性樹脂層と、 蛍光剤を含み、前記チップ封止部包囲部の内側に形成さ
れた第2透光性樹脂層と を備えることを特徴とする表面実装型発光ダイオード。1. A light emitting diode chip disposed on a substrate, a chip sealing portion for sealing the light emitting diode chip, and a height around the chip sealing portion, the height of the chip sealing portion. A first light-transmitting resin layer having a chip sealing portion surrounding portion provided at a height higher than a height, and a second light-transmitting resin layer containing a fluorescent agent and formed inside the chip sealing portion surrounding portion. A surface-mounted light-emitting diode comprising:
る工程と、基板上に設けられた電極と前記発光ダイオー
ドチップに備えられた電極とを金属線により接続する工
程と、前記発光ダイオードチップを透光性樹脂により封
止してチップ封止部を形成する工程と、前記チップ封止
部を蛍光剤を含む透光性樹脂により覆う工程とを含む表
面実装型発光ダイオードの製造方法において、 前記チップ封止部に対応する凹部を中央部に有した凸状
部が所定間隔を隔てて複数設けられた型を、各凹部を各
発光ダイオードチップに対向させた状態で、前記基板の
上方に所定間隔を隔てて配する工程と、 前記型と前記基板との間に透光性樹脂を流し込む工程
と、 前記透光性樹脂を硬化させ、前記型を開いて第1透光性
樹脂層を形成する工程と、 前記凸状部によって形成された第1透光性樹脂層の凹み
に、蛍光剤を含む透光性樹脂を注入する工程と、 前記透光性樹脂を硬化させて第2透光性樹脂層を形成す
る工程とを含むことを特徴とする表面実装型発光ダイオ
ードの製造方法。2. A step of mounting a light-emitting diode chip on a substrate, a step of connecting an electrode provided on the substrate to an electrode provided on the light-emitting diode chip by a metal wire, and A step of forming a chip sealing portion by sealing with a light resin, and a step of covering the chip sealing portion with a light-transmitting resin containing a fluorescent agent; A mold provided with a plurality of convex portions having a concave portion corresponding to the sealing portion at the center at a predetermined interval is provided at a predetermined interval above the substrate with each concave portion facing each light emitting diode chip. Forming a first light-transmitting resin layer by curing the light-transmitting resin, opening the mold, and forming a first light-transmitting resin layer. A process and the convex portion A step of injecting a translucent resin containing a fluorescent agent into the recess of the first translucent resin layer thus formed; and a step of curing the translucent resin to form a second translucent resin layer. A method for manufacturing a surface-mounted light emitting diode, comprising:
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