[go: up one dir, main page]

IN2014DN08606A - - Google Patents

Info

Publication number
IN2014DN08606A
IN2014DN08606A IN8606DEN2014A IN2014DN08606A IN 2014DN08606 A IN2014DN08606 A IN 2014DN08606A IN 8606DEN2014 A IN8606DEN2014 A IN 8606DEN2014A IN 2014DN08606 A IN2014DN08606 A IN 2014DN08606A
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Shiro Tsunai
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of IN2014DN08606A publication Critical patent/IN2014DN08606A/en

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/57Control of the dynamic range
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/53Control of the integration time
    • H04N25/533Control of the integration time by using differing integration times for different sensor regions
    • H04N25/535Control of the integration time by using differing integration times for different sensor regions by dynamic region selection
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/57Control of the dynamic range
    • H04N25/58Control of the dynamic range involving two or more exposures
    • H04N25/581Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/585Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/79Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182Colour image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/199Back-illuminated image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8053Colour filters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8063Microlenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/809Constructional details of image sensors of hybrid image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/811Interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Studio Devices (AREA)
IN8606DEN2014 2012-03-30 2014-10-14 IN2014DN08606A (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012082312 2012-03-30
JP2012128092 2012-06-05
PCT/JP2013/002148 WO2013145765A1 (ja) 2012-03-30 2013-03-28 撮像ユニット、撮像装置および撮像制御プログラム

Publications (1)

Publication Number Publication Date
IN2014DN08606A true IN2014DN08606A (ru) 2015-05-22

Family

ID=49259058

Family Applications (1)

Application Number Title Priority Date Filing Date
IN8606DEN2014 IN2014DN08606A (ru) 2012-03-30 2014-10-14

Country Status (7)

Country Link
US (6) US9571767B2 (ru)
EP (2) EP2833620B1 (ru)
JP (7) JP6277954B2 (ru)
CN (6) CN110299373B (ru)
IN (1) IN2014DN08606A (ru)
RU (2) RU2018130065A (ru)
WO (1) WO2013145765A1 (ru)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1104381B (de) * 1959-10-03 1961-04-06 Karrenberg Fa Wilhelm Tuerschloss
CN110299373B (zh) * 2012-03-30 2024-10-01 株式会社尼康 拍摄装置
WO2013164915A1 (ja) * 2012-05-02 2013-11-07 株式会社ニコン 撮像装置
EP2975839B1 (en) 2013-03-14 2020-11-25 Nikon Corporation Image-capturing unit, image-capturing device, and image-capture control program
EP3018893A4 (en) 2013-07-04 2016-11-30 Nikon Corp ELECTRONIC DEVICE, CONTROL METHOD FOR ELECTRONIC DEVICE AND CONTROL PROGRAM
TWI539584B (zh) * 2014-05-12 2016-06-21 原相科技股份有限公司 具增進的收光效率的前感光式半導體結構及其製作方法
JP6380986B2 (ja) * 2015-03-12 2018-08-29 富士フイルム株式会社 撮影装置および方法
CN113099136A (zh) 2015-09-30 2021-07-09 株式会社尼康 拍摄元件
WO2017104765A1 (ja) 2015-12-16 2017-06-22 株式会社ニコン 撮像装置および動き検出方法
JP2018019335A (ja) * 2016-07-29 2018-02-01 ソニー株式会社 撮像素子および撮像装置
KR102477352B1 (ko) * 2017-09-29 2022-12-15 삼성전자주식회사 반도체 패키지 및 이미지 센서
KR102430496B1 (ko) 2017-09-29 2022-08-08 삼성전자주식회사 이미지 센싱 장치 및 그 제조 방법
EP3720116A4 (en) * 2017-11-30 2020-10-07 Sony Corporation IMAGING DEVICE, IMAGING PROCESS, AND IMAGING ELEMENT
JP6610648B2 (ja) * 2017-12-26 2019-11-27 株式会社ニコン 撮像装置
KR102499033B1 (ko) * 2018-01-31 2023-02-13 삼성전자주식회사 스택형 이미지 센서 및 스택형 이미지 센서를 포함하는 전자 장치
JP2018157602A (ja) * 2018-06-14 2018-10-04 株式会社ニコン 撮像装置
JP6954391B2 (ja) * 2018-06-14 2021-10-27 株式会社ニコン 電子機器
JP2020014110A (ja) * 2018-07-18 2020-01-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
JP7245016B2 (ja) 2018-09-21 2023-03-23 キヤノン株式会社 光電変換装置および撮像システム
JP7250555B2 (ja) * 2019-02-18 2023-04-03 キヤノン株式会社 撮像素子、および撮像装置
US11336854B2 (en) 2019-03-01 2022-05-17 Brookman Technology, Inc. Distance image capturing apparatus and distance image capturing method using distance image capturing apparatus
CN119629448A (zh) 2019-07-26 2025-03-14 富士胶片株式会社 成像元件、摄像装置、成像元件的工作方法及计算机程序产品
JP7516031B2 (ja) * 2019-11-19 2024-07-16 キヤノン株式会社 撮像装置及び撮像システム
EP4102910A4 (en) 2020-02-05 2023-05-10 Panasonic Intellectual Property Corporation of America COMMUNICATION TERMINAL AND METHOD
JP7660551B2 (ja) * 2020-02-18 2025-04-11 ヌヴォトンテクノロジージャパン株式会社 固体撮像装置、及びそれを用いる撮像装置
US12349495B2 (en) * 2020-02-21 2025-07-01 Canon Kabushiki Kaisha Semiconductor device and method for manufacturing semiconductor device
KR20220022019A (ko) * 2020-08-14 2022-02-23 삼성디스플레이 주식회사 입력 감지 방법 및 이를 포함하는 입력 감지 장치
JP7099560B2 (ja) * 2021-01-19 2022-07-12 株式会社ニコン 撮像素子及び撮像装置

Family Cites Families (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0626410B2 (ja) * 1986-04-14 1994-04-06 富士写真フイルム株式会社 カラ−イメ−ジセンサ−
JPS6489720A (en) * 1987-09-30 1989-04-04 Toshiba Corp Line switching device
US5262871A (en) * 1989-11-13 1993-11-16 Rutgers, The State University Multiple resolution image sensor
JPH06113195A (ja) * 1992-09-29 1994-04-22 Canon Inc ビデオカメラ装置
US5452004A (en) * 1993-06-17 1995-09-19 Litton Systems, Inc. Focal plane array imaging device with random access architecture
JP2541470B2 (ja) * 1993-08-26 1996-10-09 日本電気株式会社 固体撮像素子
US5543838A (en) * 1993-08-31 1996-08-06 Xerox Corporation Signal multiplexing system for an image sensor array
JP3397469B2 (ja) * 1994-10-20 2003-04-14 キヤノン株式会社 固体撮像装置
US6977684B1 (en) * 1998-04-30 2005-12-20 Canon Kabushiki Kaisha Arrangement of circuits in pixels, each circuit shared by a plurality of pixels, in image sensing apparatus
US6693670B1 (en) * 1999-07-29 2004-02-17 Vision - Sciences, Inc. Multi-photodetector unit cell
JP2001103379A (ja) * 1999-09-28 2001-04-13 Minolta Co Ltd 固体撮像装置
JP3713418B2 (ja) * 2000-05-30 2005-11-09 光正 小柳 3次元画像処理装置の製造方法
US20030049925A1 (en) 2001-09-10 2003-03-13 Layman Paul Arthur High-density inter-die interconnect structure
CN1234234C (zh) * 2002-09-30 2005-12-28 松下电器产业株式会社 固体摄像器件及使用该固体摄像器件的设备
DE602004021985D1 (de) * 2003-03-25 2009-08-27 Panasonic Corp Bildaufnahmevorrichtung, die Detailverlust schattiger Bereiche vermeidet
US20050212936A1 (en) * 2004-03-25 2005-09-29 Eastman Kodak Company Extended dynamic range image sensor with fixed pattern noise reduction
JP4349232B2 (ja) 2004-07-30 2009-10-21 ソニー株式会社 半導体モジュール及びmos型固体撮像装置
JP4277216B2 (ja) 2005-01-13 2009-06-10 ソニー株式会社 撮像装置及び撮像結果の処理方法
TW201101476A (en) * 2005-06-02 2011-01-01 Sony Corp Semiconductor image sensor module and method of manufacturing the same
JP4792976B2 (ja) * 2006-01-10 2011-10-12 セイコーエプソン株式会社 撮像装置
JP4649623B2 (ja) 2006-01-18 2011-03-16 国立大学法人静岡大学 固体撮像装置及びその画素信号の読みだし方法
JP4487944B2 (ja) * 2006-02-09 2010-06-23 ソニー株式会社 固体撮像装置
JP2007220866A (ja) * 2006-02-16 2007-08-30 Sony Corp 半導体装置
JP2007228019A (ja) * 2006-02-21 2007-09-06 Olympus Corp 撮像装置
JP2007228460A (ja) 2006-02-27 2007-09-06 Mitsumasa Koyanagi 集積センサを搭載した積層型半導体装置
JP5043448B2 (ja) * 2006-03-10 2012-10-10 キヤノン株式会社 放射線撮像装置及び放射線撮像システム
JP3996618B1 (ja) * 2006-05-11 2007-10-24 総吉 廣津 半導体撮像素子
WO2007134473A1 (de) * 2006-05-22 2007-11-29 Waeny Martin Bildaufnehmer mit lokaler adaptiver belichtungsregelung
US7714903B2 (en) * 2006-08-29 2010-05-11 Zoran Corporation Wide dynamic range image capturing system method and apparatus
CN101174645A (zh) * 2006-11-03 2008-05-07 台湾积体电路制造股份有限公司 图像感测装置及其形成方法
JP4843461B2 (ja) * 2006-11-13 2011-12-21 株式会社東芝 固体撮像装置
US8102436B2 (en) * 2006-12-18 2012-01-24 Sony Corporation Image-capturing apparatus and method, recording apparatus and method, and reproducing apparatus and method
US8144214B2 (en) 2007-04-18 2012-03-27 Panasonic Corporation Imaging apparatus, imaging method, integrated circuit, and storage medium
JP5133085B2 (ja) * 2007-04-18 2013-01-30 パナソニック株式会社 撮像装置および撮像方法
JP4337911B2 (ja) * 2007-05-24 2009-09-30 ソニー株式会社 撮像装置、撮像回路、および撮像方法
WO2009020031A1 (en) * 2007-08-06 2009-02-12 Canon Kabushiki Kaisha Image sensing apparatus
US7969492B2 (en) 2007-08-28 2011-06-28 Sanyo Electric Co., Ltd. Image pickup apparatus
JP2009055540A (ja) * 2007-08-29 2009-03-12 Sanyo Electric Co Ltd 撮像装置
JP2009055433A (ja) * 2007-08-28 2009-03-12 Sanyo Electric Co Ltd 撮像装置
JP4693822B2 (ja) 2007-08-29 2011-06-01 キヤノン株式会社 固体撮像装置、カメラ及び情報処理装置
JP5223343B2 (ja) * 2008-01-10 2013-06-26 株式会社ニコン 固体撮像素子
TWI444040B (zh) * 2008-06-10 2014-07-01 Univ Tohoku Solid-state imaging element
JP5266916B2 (ja) * 2008-07-09 2013-08-21 ソニー株式会社 撮像素子、カメラ、撮像素子の制御方法、並びにプログラム
JP5132497B2 (ja) * 2008-09-16 2013-01-30 キヤノン株式会社 撮像装置および撮像装置の制御方法
JP2010093549A (ja) * 2008-10-08 2010-04-22 Fujifilm Corp 撮像装置及び固体撮像素子の駆動方法
JP5247397B2 (ja) * 2008-12-05 2013-07-24 キヤノン株式会社 撮像装置及び撮像方法
JP2010166304A (ja) * 2009-01-15 2010-07-29 Fujifilm Corp 撮影装置および撮影装置の制御方法並びにプログラム
JP5524495B2 (ja) * 2009-03-10 2014-06-18 富士機械製造株式会社 撮像システムおよび電子回路部品装着機
JP4835710B2 (ja) 2009-03-17 2011-12-14 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器
JP4941490B2 (ja) * 2009-03-24 2012-05-30 ソニー株式会社 固体撮像装置、及び電子機器
JP2010283787A (ja) * 2009-06-08 2010-12-16 Panasonic Corp 撮像装置
CN101931756B (zh) * 2009-06-19 2012-03-21 比亚迪股份有限公司 一种提高cmos图像传感器动态范围的装置和方法
JP5482025B2 (ja) * 2009-08-28 2014-04-23 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5521721B2 (ja) * 2009-08-28 2014-06-18 ソニー株式会社 撮像素子およびカメラシステム
JP5342969B2 (ja) * 2009-09-10 2013-11-13 富士フイルム株式会社 撮像装置及び撮像方法
JP2011091561A (ja) * 2009-10-21 2011-05-06 Panasonic Corp 固体撮像素子、その駆動方法及びカメラ
JP5721994B2 (ja) * 2009-11-27 2015-05-20 株式会社ジャパンディスプレイ 放射線撮像装置
KR101133733B1 (ko) * 2009-12-10 2012-04-09 삼성전자주식회사 전자 셔터를 이용한 다단계 노출 방법 및 이를 이용한 촬영 장치
KR20110076729A (ko) * 2009-12-18 2011-07-06 삼성전자주식회사 전자 셔터를 이용한 다단계 노출 이미지 획득 방법 및 이를 이용한 촬영 장치
JP2011243704A (ja) * 2010-05-17 2011-12-01 Panasonic Corp 固体撮像装置
JP2011244309A (ja) * 2010-05-20 2011-12-01 Sony Corp 画像処理装置、画像処理方法及びプログラム
JP5631643B2 (ja) 2010-06-24 2014-11-26 オリンパス株式会社 読出制御装置、読出制御方法、撮像装置、固体撮像装置およびプログラム
JP2012010104A (ja) * 2010-06-24 2012-01-12 Sony Corp 画像処理装置、撮像装置、画像処理方法、およびプログラム
JP4657379B1 (ja) * 2010-09-01 2011-03-23 株式会社ナックイメージテクノロジー 高速度ビデオカメラ
JP5500007B2 (ja) * 2010-09-03 2014-05-21 ソニー株式会社 固体撮像素子およびカメラシステム
CN102096273B (zh) * 2010-12-29 2012-08-22 北京空间机电研究所 一种基于目标特性的空间相机自动曝光方法
JP2012235332A (ja) * 2011-05-02 2012-11-29 Sony Corp 撮像装置、および撮像装置制御方法、並びにプログラム
CN110299373B (zh) * 2012-03-30 2024-10-01 株式会社尼康 拍摄装置

Also Published As

Publication number Publication date
JP6593468B2 (ja) 2019-10-23
JP6593470B2 (ja) 2019-10-23
EP2833620A4 (en) 2015-12-09
JP7283520B2 (ja) 2023-05-30
JP2018082495A (ja) 2018-05-24
EP2833620B1 (en) 2019-01-16
CN110299373A (zh) 2019-10-01
JP2018082494A (ja) 2018-05-24
CN110299373B (zh) 2024-10-01
EP3490247B1 (en) 2022-09-07
JP2020017987A (ja) 2020-01-30
US11743608B2 (en) 2023-08-29
CN104247401A (zh) 2014-12-24
US10652485B2 (en) 2020-05-12
CN110177227B (zh) 2022-04-05
US20150015760A1 (en) 2015-01-15
US11082646B2 (en) 2021-08-03
JP2023103373A (ja) 2023-07-26
WO2013145765A1 (ja) 2013-10-03
US20200236307A1 (en) 2020-07-23
JP6593469B2 (ja) 2019-10-23
RU2666761C2 (ru) 2018-09-12
US20230362504A1 (en) 2023-11-09
CN110177227A (zh) 2019-08-27
CN110148605A (zh) 2019-08-20
EP3490247A1 (en) 2019-05-29
US20180227512A1 (en) 2018-08-09
US9967480B2 (en) 2018-05-08
US20210337141A1 (en) 2021-10-28
CN110149485B (zh) 2022-04-19
BR112014024330A2 (pt) 2022-07-19
US9571767B2 (en) 2017-02-14
JP2022024087A (ja) 2022-02-08
CN110149485A (zh) 2019-08-20
CN104247401B (zh) 2019-07-02
EP2833620A1 (en) 2015-02-04
JP2018082496A (ja) 2018-05-24
JPWO2013145765A1 (ja) 2015-12-10
RU2018130065A (ru) 2019-03-15
JP6277954B2 (ja) 2018-02-14
US20170118422A1 (en) 2017-04-27
RU2014143824A (ru) 2016-05-27
CN110265415A (zh) 2019-09-20

Similar Documents

Publication Publication Date Title
BR112014017635A2 (ru)
IN2014DN08606A (ru)
BR112014017625A2 (ru)
BR112014017659A2 (ru)
BR112014017646A2 (ru)
BR112014017638A2 (ru)
BR112014018055A2 (ru)
AR092201A1 (ru)
BR112014018161A2 (ru)
BR112013027865A2 (ru)
BR112014017634A2 (ru)
BR112014017644A2 (ru)
BR112014017588A2 (ru)
BR112014017647A2 (ru)
BR112014013184A8 (ru)
BR112014017623A2 (ru)
BR112014017630A2 (ru)
BR112014017652A2 (ru)
BR112014017631A2 (ru)
BR112014017627A2 (ru)
BR112014017641A2 (ru)
BR112014017622A2 (ru)
BR112014017589A2 (ru)
BR112014017671A2 (ru)
BR112014017636A2 (ru)