IN2014DN08606A - - Google Patents
Info
- Publication number
- IN2014DN08606A IN2014DN08606A IN8606DEN2014A IN2014DN08606A IN 2014DN08606 A IN2014DN08606 A IN 2014DN08606A IN 8606DEN2014 A IN8606DEN2014 A IN 8606DEN2014A IN 2014DN08606 A IN2014DN08606 A IN 2014DN08606A
- Authority
- IN
- India
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
- H04N25/533—Control of the integration time by using differing integration times for different sensor regions
- H04N25/535—Control of the integration time by using differing integration times for different sensor regions by dynamic region selection
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
- H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Studio Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012082312 | 2012-03-30 | ||
JP2012128092 | 2012-06-05 | ||
PCT/JP2013/002148 WO2013145765A1 (ja) | 2012-03-30 | 2013-03-28 | 撮像ユニット、撮像装置および撮像制御プログラム |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2014DN08606A true IN2014DN08606A (ru) | 2015-05-22 |
Family
ID=49259058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN8606DEN2014 IN2014DN08606A (ru) | 2012-03-30 | 2014-10-14 |
Country Status (7)
Country | Link |
---|---|
US (6) | US9571767B2 (ru) |
EP (2) | EP2833620B1 (ru) |
JP (7) | JP6277954B2 (ru) |
CN (6) | CN110299373B (ru) |
IN (1) | IN2014DN08606A (ru) |
RU (2) | RU2018130065A (ru) |
WO (1) | WO2013145765A1 (ru) |
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CN110299373B (zh) * | 2012-03-30 | 2024-10-01 | 株式会社尼康 | 拍摄装置 |
WO2013164915A1 (ja) * | 2012-05-02 | 2013-11-07 | 株式会社ニコン | 撮像装置 |
EP2975839B1 (en) | 2013-03-14 | 2020-11-25 | Nikon Corporation | Image-capturing unit, image-capturing device, and image-capture control program |
EP3018893A4 (en) | 2013-07-04 | 2016-11-30 | Nikon Corp | ELECTRONIC DEVICE, CONTROL METHOD FOR ELECTRONIC DEVICE AND CONTROL PROGRAM |
TWI539584B (zh) * | 2014-05-12 | 2016-06-21 | 原相科技股份有限公司 | 具增進的收光效率的前感光式半導體結構及其製作方法 |
JP6380986B2 (ja) * | 2015-03-12 | 2018-08-29 | 富士フイルム株式会社 | 撮影装置および方法 |
CN113099136A (zh) | 2015-09-30 | 2021-07-09 | 株式会社尼康 | 拍摄元件 |
WO2017104765A1 (ja) | 2015-12-16 | 2017-06-22 | 株式会社ニコン | 撮像装置および動き検出方法 |
JP2018019335A (ja) * | 2016-07-29 | 2018-02-01 | ソニー株式会社 | 撮像素子および撮像装置 |
KR102477352B1 (ko) * | 2017-09-29 | 2022-12-15 | 삼성전자주식회사 | 반도체 패키지 및 이미지 센서 |
KR102430496B1 (ko) | 2017-09-29 | 2022-08-08 | 삼성전자주식회사 | 이미지 센싱 장치 및 그 제조 방법 |
EP3720116A4 (en) * | 2017-11-30 | 2020-10-07 | Sony Corporation | IMAGING DEVICE, IMAGING PROCESS, AND IMAGING ELEMENT |
JP6610648B2 (ja) * | 2017-12-26 | 2019-11-27 | 株式会社ニコン | 撮像装置 |
KR102499033B1 (ko) * | 2018-01-31 | 2023-02-13 | 삼성전자주식회사 | 스택형 이미지 센서 및 스택형 이미지 센서를 포함하는 전자 장치 |
JP2018157602A (ja) * | 2018-06-14 | 2018-10-04 | 株式会社ニコン | 撮像装置 |
JP6954391B2 (ja) * | 2018-06-14 | 2021-10-27 | 株式会社ニコン | 電子機器 |
JP2020014110A (ja) * | 2018-07-18 | 2020-01-23 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子、撮像装置、および、固体撮像素子の制御方法 |
JP7245016B2 (ja) | 2018-09-21 | 2023-03-23 | キヤノン株式会社 | 光電変換装置および撮像システム |
JP7250555B2 (ja) * | 2019-02-18 | 2023-04-03 | キヤノン株式会社 | 撮像素子、および撮像装置 |
US11336854B2 (en) | 2019-03-01 | 2022-05-17 | Brookman Technology, Inc. | Distance image capturing apparatus and distance image capturing method using distance image capturing apparatus |
CN119629448A (zh) | 2019-07-26 | 2025-03-14 | 富士胶片株式会社 | 成像元件、摄像装置、成像元件的工作方法及计算机程序产品 |
JP7516031B2 (ja) * | 2019-11-19 | 2024-07-16 | キヤノン株式会社 | 撮像装置及び撮像システム |
EP4102910A4 (en) | 2020-02-05 | 2023-05-10 | Panasonic Intellectual Property Corporation of America | COMMUNICATION TERMINAL AND METHOD |
JP7660551B2 (ja) * | 2020-02-18 | 2025-04-11 | ヌヴォトンテクノロジージャパン株式会社 | 固体撮像装置、及びそれを用いる撮像装置 |
US12349495B2 (en) * | 2020-02-21 | 2025-07-01 | Canon Kabushiki Kaisha | Semiconductor device and method for manufacturing semiconductor device |
KR20220022019A (ko) * | 2020-08-14 | 2022-02-23 | 삼성디스플레이 주식회사 | 입력 감지 방법 및 이를 포함하는 입력 감지 장치 |
JP7099560B2 (ja) * | 2021-01-19 | 2022-07-12 | 株式会社ニコン | 撮像素子及び撮像装置 |
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JP2011244309A (ja) * | 2010-05-20 | 2011-12-01 | Sony Corp | 画像処理装置、画像処理方法及びプログラム |
JP5631643B2 (ja) | 2010-06-24 | 2014-11-26 | オリンパス株式会社 | 読出制御装置、読出制御方法、撮像装置、固体撮像装置およびプログラム |
JP2012010104A (ja) * | 2010-06-24 | 2012-01-12 | Sony Corp | 画像処理装置、撮像装置、画像処理方法、およびプログラム |
JP4657379B1 (ja) * | 2010-09-01 | 2011-03-23 | 株式会社ナックイメージテクノロジー | 高速度ビデオカメラ |
JP5500007B2 (ja) * | 2010-09-03 | 2014-05-21 | ソニー株式会社 | 固体撮像素子およびカメラシステム |
CN102096273B (zh) * | 2010-12-29 | 2012-08-22 | 北京空间机电研究所 | 一种基于目标特性的空间相机自动曝光方法 |
JP2012235332A (ja) * | 2011-05-02 | 2012-11-29 | Sony Corp | 撮像装置、および撮像装置制御方法、並びにプログラム |
CN110299373B (zh) * | 2012-03-30 | 2024-10-01 | 株式会社尼康 | 拍摄装置 |
-
2013
- 2013-03-28 CN CN201910490100.XA patent/CN110299373B/zh active Active
- 2013-03-28 WO PCT/JP2013/002148 patent/WO2013145765A1/ja active Application Filing
- 2013-03-28 RU RU2018130065A patent/RU2018130065A/ru not_active Application Discontinuation
- 2013-03-28 CN CN201910490111.8A patent/CN110148605A/zh active Pending
- 2013-03-28 CN CN201910490680.2A patent/CN110177227B/zh active Active
- 2013-03-28 CN CN201910490295.8A patent/CN110149485B/zh active Active
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