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DE69518172D1 - Feinstruktur-Herstellungsverfahren - Google Patents

Feinstruktur-Herstellungsverfahren

Info

Publication number
DE69518172D1
DE69518172D1 DE69518172T DE69518172T DE69518172D1 DE 69518172 D1 DE69518172 D1 DE 69518172D1 DE 69518172 T DE69518172 T DE 69518172T DE 69518172 T DE69518172 T DE 69518172T DE 69518172 D1 DE69518172 D1 DE 69518172D1
Authority
DE
Germany
Prior art keywords
manufacturing process
fine structure
structure manufacturing
fine
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69518172T
Other languages
English (en)
Other versions
DE69518172T2 (de
Inventor
Akiko Katsuyama
Masaru Sasago
Kazuhiro Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69518172D1 publication Critical patent/DE69518172D1/de
Application granted granted Critical
Publication of DE69518172T2 publication Critical patent/DE69518172T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/949—Energy beam treating radiation resist on semiconductor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69518172T 1994-01-18 1995-01-18 Feinstruktur-Herstellungsverfahren Expired - Fee Related DE69518172T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP346394 1994-01-18

Publications (2)

Publication Number Publication Date
DE69518172D1 true DE69518172D1 (de) 2000-09-07
DE69518172T2 DE69518172T2 (de) 2001-01-11

Family

ID=11558026

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69518172T Expired - Fee Related DE69518172T2 (de) 1994-01-18 1995-01-18 Feinstruktur-Herstellungsverfahren

Country Status (3)

Country Link
US (1) US5518579A (de)
EP (1) EP0665470B1 (de)
DE (1) DE69518172T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7534752B2 (en) * 1996-07-03 2009-05-19 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US5955244A (en) * 1996-08-20 1999-09-21 Quantum Corporation Method for forming photoresist features having reentrant profiles using a basic agent
US5879863A (en) * 1997-01-22 1999-03-09 Kabushiki Kaisha Toshiba Pattern forming method
US6048672A (en) * 1998-02-20 2000-04-11 Shipley Company, L.L.C. Photoresist compositions and methods and articles of manufacture comprising same
US6462343B1 (en) 2000-10-26 2002-10-08 Advanced Micro Devices, Inc. System and method of providing improved CD-SEM pattern recognition of structures with variable contrast
DE10104577B4 (de) * 2001-02-01 2005-10-27 Infineon Technologies Ag Verfahren zum Belacken eines Photomaskenrohlings für die Chipherstellung
US6458508B1 (en) * 2001-02-23 2002-10-01 Lsi Logic Corporation Method of protecting acid-catalyzed photoresist from chip-generated basic contaminants
JP3988873B2 (ja) 2002-08-22 2007-10-10 富士通株式会社 半導体装置の製造方法
US7160665B2 (en) * 2002-12-30 2007-01-09 International Business Machines Corporation Method for employing vertical acid transport for lithographic imaging applications
JP4146755B2 (ja) * 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
KR100490680B1 (ko) * 2003-05-12 2005-05-19 주식회사 젯텍 사이드플래시에 절취홈을 갖는 반도체 패키지 및 그형성방법, 그리고 이를 이용한 디플래시 방법
JP4524774B2 (ja) * 2003-06-13 2010-08-18 株式会社半導体エネルギー研究所 半導体装置の作製方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123A (ja) * 1981-06-25 1983-01-05 Nec Corp 半導体装置の製造方法
JPS6390832A (ja) * 1986-10-03 1988-04-21 Matsushita Electric Ind Co Ltd パタ−ン形成方法
JP2603148B2 (ja) * 1990-06-08 1997-04-23 三菱電機株式会社 パターン形成方法
JP3118887B2 (ja) * 1990-11-30 2000-12-18 株式会社日立製作所 パターン形成方法
US5219788A (en) * 1991-02-25 1993-06-15 Ibm Corporation Bilayer metallization cap for photolithography
US5275689A (en) * 1991-11-14 1994-01-04 E. I. Du Pont De Nemours And Company Method and compositions for diffusion patterning

Also Published As

Publication number Publication date
EP0665470B1 (de) 2000-08-02
US5518579A (en) 1996-05-21
EP0665470A2 (de) 1995-08-02
EP0665470A3 (de) 1996-04-03
DE69518172T2 (de) 2001-01-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee