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DE69413438D1 - Spannung-Erhöhungsschaltung - Google Patents

Spannung-Erhöhungsschaltung

Info

Publication number
DE69413438D1
DE69413438D1 DE69413438T DE69413438T DE69413438D1 DE 69413438 D1 DE69413438 D1 DE 69413438D1 DE 69413438 T DE69413438 T DE 69413438T DE 69413438 T DE69413438 T DE 69413438T DE 69413438 D1 DE69413438 D1 DE 69413438D1
Authority
DE
Germany
Prior art keywords
boost circuit
voltage boost
voltage
circuit
boost
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69413438T
Other languages
English (en)
Other versions
DE69413438T2 (de
Inventor
Hideki Arakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69413438D1 publication Critical patent/DE69413438D1/de
Application granted granted Critical
Publication of DE69413438T2 publication Critical patent/DE69413438T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H02M3/078—Charge pumps of the Schenkel-type with means for reducing the back bias effect, i.e. the effect which causes the threshold voltage of transistors to increase as more stages are added to the converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69413438T 1993-03-18 1994-03-17 Spannung-Erhöhungsschaltung Expired - Lifetime DE69413438T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5832093A JP3307453B2 (ja) 1993-03-18 1993-03-18 昇圧回路

Publications (2)

Publication Number Publication Date
DE69413438D1 true DE69413438D1 (de) 1998-10-29
DE69413438T2 DE69413438T2 (de) 1999-05-06

Family

ID=13080989

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69413438T Expired - Lifetime DE69413438T2 (de) 1993-03-18 1994-03-17 Spannung-Erhöhungsschaltung

Country Status (5)

Country Link
US (1) US5489870A (de)
EP (1) EP0616329B1 (de)
JP (1) JP3307453B2 (de)
KR (1) KR100270926B1 (de)
DE (1) DE69413438T2 (de)

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KR0157334B1 (ko) * 1993-11-17 1998-10-15 김광호 반도체 메모리 장치의 전압 승압회로
TW271011B (de) * 1994-04-20 1996-02-21 Nippon Steel Corp
JP2718375B2 (ja) * 1994-09-30 1998-02-25 日本電気株式会社 チャージポンプ回路
JP3167904B2 (ja) * 1994-12-27 2001-05-21 日本鋼管株式会社 電圧昇圧回路
KR0137437B1 (ko) * 1994-12-29 1998-06-01 김주용 챠지 펌프회로의 출력전압 조절회로
JP2738335B2 (ja) * 1995-04-20 1998-04-08 日本電気株式会社 昇圧回路
GB2301720B (en) * 1995-06-01 2000-05-24 Motorola Inc A MOS switching circuit
US5698877A (en) * 1995-10-31 1997-12-16 Gonzalez; Fernando Charge-pumping to increase electron collection efficiency
JPH09162713A (ja) * 1995-12-11 1997-06-20 Mitsubishi Electric Corp 半導体集積回路
US6218882B1 (en) * 1995-12-23 2001-04-17 Nec Corporation Diode circuit for clamping the signals on a transmission line to a predetermined potential
JPH09198887A (ja) * 1996-01-12 1997-07-31 Nec Corp 高電圧発生回路
JP3394133B2 (ja) * 1996-06-12 2003-04-07 沖電気工業株式会社 昇圧回路
US6100557A (en) * 1996-10-10 2000-08-08 Macronix International Co., Ltd. Triple well charge pump
WO1998016010A1 (en) * 1996-10-10 1998-04-16 Macronix International Co., Ltd. Triple well charge pump
DE69619112D1 (de) * 1996-10-11 2002-03-21 St Microelectronics Srl Verbesserte positive Ladungspumpe
WO1998020401A1 (en) * 1996-11-05 1998-05-14 Aplus Flash Technology, Inc. Positive/negative high voltage charge pump system
US5841703A (en) * 1996-12-31 1998-11-24 Intel Corporation Method and apparatus for removal of VT drop in the output diode of charge pumps
EP0855788B1 (de) * 1997-01-23 2005-06-22 STMicroelectronics S.r.l. NMOS, negative Ladungspumpe
RU2189686C2 (ru) * 1997-01-24 2002-09-20 Сименс Акциенгезелльшафт Схема для генерации отрицательных напряжений
US6130574A (en) * 1997-01-24 2000-10-10 Siemens Aktiengesellschaft Circuit configuration for producing negative voltages, charge pump having at least two circuit configurations and method of operating a charge pump
FR2759507B1 (fr) * 1997-02-12 1999-03-26 Sgs Thomson Microelectronics Pompe de charge dans une technologie a double caisson
JPH114575A (ja) * 1997-06-11 1999-01-06 Nec Corp 昇圧回路
US6166584A (en) * 1997-06-20 2000-12-26 Intel Corporation Forward biased MOS circuits
US6300819B1 (en) 1997-06-20 2001-10-09 Intel Corporation Circuit including forward body bias from supply voltage and ground nodes
US6218895B1 (en) 1997-06-20 2001-04-17 Intel Corporation Multiple well transistor circuits having forward body bias
AU7970898A (en) * 1997-06-20 1999-01-04 Intel Corporation Forward body bias transistor circuits
US6593799B2 (en) 1997-06-20 2003-07-15 Intel Corporation Circuit including forward body bias from supply voltage and ground nodes
US6232827B1 (en) 1997-06-20 2001-05-15 Intel Corporation Transistors providing desired threshold voltage and reduced short channel effects with forward body bias
US6100751A (en) * 1997-06-20 2000-08-08 Intel Corporation Forward body biased field effect transistor providing decoupling capacitance
US6124751A (en) * 1997-06-30 2000-09-26 Stmicroelectronics, Inc. Boost capacitor for an H-bridge integrated circuit motor controller having matching characteristics with that of the low-side switching devices of the bridge
JP3765163B2 (ja) * 1997-07-14 2006-04-12 ソニー株式会社 レベルシフト回路
US6078212A (en) * 1997-08-18 2000-06-20 Micron Technology, Inc. VT cancellation in output stage of charge pump
US5886566A (en) * 1997-08-21 1999-03-23 Integrated Silicon Solution, Inc. High voltage charge transfer stage
FR2773012B1 (fr) * 1997-12-24 2001-02-02 Sgs Thomson Microelectronics Dispositif a pompe de charges negatives
JP3385960B2 (ja) * 1998-03-16 2003-03-10 日本電気株式会社 負電圧チャージポンプ回路
JP3223504B2 (ja) * 1998-03-31 2001-10-29 日本電気株式会社 昇圧回路
KR100268887B1 (ko) * 1998-06-17 2000-10-16 김영환 차아지 펌프 회로
US5978283A (en) * 1998-07-02 1999-11-02 Aplus Flash Technology, Inc. Charge pump circuits
JP4491846B2 (ja) * 1998-09-21 2010-06-30 ソニー株式会社 不揮発性メモリのロウデコーダ
US5982224A (en) * 1998-09-22 1999-11-09 Samsung Electronics Co., Ltd. Low-power charge pump circuit having reduced body effect
JP3554497B2 (ja) * 1998-12-08 2004-08-18 シャープ株式会社 チャージポンプ回路
US6285240B1 (en) 1999-01-14 2001-09-04 Macronix International Co., Ltd. Low threshold MOS two phase negative charge pump
WO2000042483A1 (en) * 1999-01-14 2000-07-20 Macronix Internaitonal Co., Ltd. Low threshold mos two phase negative charge pump
JP3476384B2 (ja) * 1999-07-08 2003-12-10 Ｎｅｃマイクロシステム株式会社 昇圧回路とその制御方法
US6265911B1 (en) * 1999-12-02 2001-07-24 Analog Devices, Inc. Sample and hold circuit having improved linearity
IT1313877B1 (it) * 1999-12-17 2002-09-24 St Microelectronics Srl Moltiplicatore di tensione in tecnologia cmos
US6696883B1 (en) * 2000-09-20 2004-02-24 Cypress Semiconductor Corp. Negative bias charge pump
JP2003051550A (ja) * 2001-08-07 2003-02-21 Denso Corp 半導体装置
US6674317B1 (en) 2002-09-18 2004-01-06 Taiwan Semiconductor Manufacturing Company Output stage of a charge pump circuit providing relatively stable output voltage without voltage degradation
US6833753B2 (en) * 2002-11-27 2004-12-21 Texas Instruments Incorporated Method and system for signal dependent boosting in sampling circuits
US6930536B2 (en) * 2003-11-04 2005-08-16 Micron Technology, Inc. Voltage booster
US7248988B2 (en) * 2004-03-01 2007-07-24 Transmeta Corporation System and method for reducing temperature variation during burn in
JP4773746B2 (ja) * 2005-05-11 2011-09-14 シャープ株式会社 昇圧回路
JP4712519B2 (ja) * 2005-05-27 2011-06-29 フリースケール セミコンダクター インコーポレイテッド ハイサイド駆動回路用チャージポンプ回路及びドライバ駆動電圧回路
KR100851546B1 (ko) * 2006-09-22 2008-08-11 삼성전자주식회사 비휘발성 기억 장치 및 그 동작 방법
US8115597B1 (en) * 2007-03-07 2012-02-14 Impinj, Inc. RFID tags with synchronous power rectifier
US8710908B2 (en) * 2011-01-28 2014-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Charge pump and method of biasing deep N-well in charge pump
JP2012175441A (ja) * 2011-02-22 2012-09-10 Elpida Memory Inc 半導体装置
CN102624222B (zh) * 2012-03-27 2017-03-29 上海华虹宏力半导体制造有限公司 电荷泵及电荷泵系统
JP6031883B2 (ja) 2012-08-08 2016-11-24 富士通株式会社 半導体集積回路及び電源回路
US8947158B2 (en) * 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9385592B2 (en) 2013-08-21 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Charge pump circuit and semiconductor device including the same
US9343961B1 (en) * 2013-09-13 2016-05-17 Qualtre, Inc. Ultrahigh voltage charge pump apparatus implemented with low voltage technology
KR102267237B1 (ko) 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US9312280B2 (en) 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11611276B2 (en) 2014-12-04 2023-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Charge pump circuit
US11300988B2 (en) 2018-08-07 2022-04-12 Battery Savers Inc. Method and system to boost battery voltage

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JPS6038028B2 (ja) * 1979-07-23 1985-08-29 三菱電機株式会社 基板電位発生装置
IT1221261B (it) * 1988-06-28 1990-06-27 Sgs Thomson Microelectronics Moltiplicatore di tensione omos
US5081371A (en) * 1990-11-07 1992-01-14 U.S. Philips Corp. Integrated charge pump circuit with back bias voltage reduction

Also Published As

Publication number Publication date
EP0616329A3 (en) 1995-11-29
JP3307453B2 (ja) 2002-07-24
EP0616329A2 (de) 1994-09-21
KR100270926B1 (ko) 2000-11-01
JPH06276729A (ja) 1994-09-30
DE69413438T2 (de) 1999-05-06
EP0616329B1 (de) 1998-09-23
US5489870A (en) 1996-02-06
KR940022551A (ko) 1994-10-21

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