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DE69030129D1 - Herstellungsverfahren einer integrierten Halbleiterschaltung - Google Patents

Herstellungsverfahren einer integrierten Halbleiterschaltung

Info

Publication number
DE69030129D1
DE69030129D1 DE69030129T DE69030129T DE69030129D1 DE 69030129 D1 DE69030129 D1 DE 69030129D1 DE 69030129 T DE69030129 T DE 69030129T DE 69030129 T DE69030129 T DE 69030129T DE 69030129 D1 DE69030129 D1 DE 69030129D1
Authority
DE
Germany
Prior art keywords
integrated circuit
manufacturing process
semiconductor integrated
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69030129T
Other languages
English (en)
Other versions
DE69030129T2 (de
Inventor
Goro Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1092691A external-priority patent/JPH02271569A/ja
Priority claimed from JP1092690A external-priority patent/JPH02271568A/ja
Priority claimed from JP1092692A external-priority patent/JPH02271570A/ja
Priority claimed from JP1104992A external-priority patent/JPH06105780B2/ja
Priority claimed from JP1104993A external-priority patent/JPH06105781B2/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69030129D1 publication Critical patent/DE69030129D1/de
Publication of DE69030129T2 publication Critical patent/DE69030129T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/103—Mask, dual function, e.g. diffusion and oxidation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69030129T 1989-04-12 1990-04-10 Herstellungsverfahren einer integrierten Halbleiterschaltung Expired - Fee Related DE69030129T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP1092691A JPH02271569A (ja) 1989-04-12 1989-04-12 集積回路の製造方法
JP1092690A JPH02271568A (ja) 1989-04-12 1989-04-12 集積回路の製造方法
JP1092692A JPH02271570A (ja) 1989-04-12 1989-04-12 集積回路の製造方法
JP1104992A JPH06105780B2 (ja) 1989-04-25 1989-04-25 集積回路の製造方法
JP1104993A JPH06105781B2 (ja) 1989-04-25 1989-04-25 集積回路の製造方法

Publications (2)

Publication Number Publication Date
DE69030129D1 true DE69030129D1 (de) 1997-04-17
DE69030129T2 DE69030129T2 (de) 1997-10-09

Family

ID=27525604

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69030129T Expired - Fee Related DE69030129T2 (de) 1989-04-12 1990-04-10 Herstellungsverfahren einer integrierten Halbleiterschaltung

Country Status (5)

Country Link
US (1) US5051372A (de)
EP (1) EP0392480B1 (de)
KR (1) KR930009595B1 (de)
CA (1) CA2014399C (de)
DE (1) DE69030129T2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192701A (en) * 1988-03-17 1993-03-09 Kabushiki Kaisha Toshiba Method of manufacturing field effect transistors having different threshold voltages
JP2873583B2 (ja) * 1989-05-10 1999-03-24 富士通株式会社 高速半導体装置
US5185272A (en) * 1990-04-16 1993-02-09 Fujitsu Limited Method of producing semiconductor device having light receiving element with capacitance
US5166083A (en) * 1991-03-28 1992-11-24 Texas Instruments Incorporated Method of integrating heterojunction bipolar transistors with heterojunction FETs and PIN diodes
US5213987A (en) * 1991-03-28 1993-05-25 Texas Instruments Incorporated Method of integrating heterojunction bipolar transistors with PIN diodes
EP0505942A1 (de) * 1991-03-28 1992-09-30 Texas Instruments Incorporated Integrationsverfahren für Heterobipolartransistoren mit Hetero-FETS und PIN-Dioden
KR940005454B1 (ko) * 1991-04-03 1994-06-18 삼성전자 주식회사 화합물반도체장치
KR950000522B1 (ko) * 1991-11-25 1995-01-24 재단법인 한국전자통신연구소 수신용 광전집적 소자 및 그 제조방법
US5268315A (en) * 1992-09-04 1993-12-07 Tektronix, Inc. Implant-free heterojunction bioplar transistor integrated circuit process
US5323020A (en) * 1992-12-22 1994-06-21 International Business Machines Corporation High performance MESFET with multiple quantum wells
US5448099A (en) * 1993-03-04 1995-09-05 Sumitomo Electric Industries, Ltd. Pin-type light receiving device, manufacture of the pin-type light receiving device and optoelectronic integrated circuit
US5355096A (en) * 1993-07-06 1994-10-11 Trw Inc. Compace HBT wide band microwave variable gain active feedback amplifier
US5576221A (en) * 1993-12-20 1996-11-19 Nec Corporation Manufacturing method of semiconductor device
US5468659A (en) * 1994-03-10 1995-11-21 Hughes Aircraft Company Reduction of base-collector junction parasitic capacitance of heterojunction bipolar transistors
EP0710984B1 (de) * 1994-11-02 2001-08-08 Trw Inc. Verfahren zum Herstellen von multifunktionellen, monolithisch-integrierten Schaltungsanordnungen
US5652435A (en) * 1995-09-01 1997-07-29 The United States Of America As Represented By The Secretary Of The Air Force Vertical structure schottky diode optical detector
US5710523A (en) * 1996-01-16 1998-01-20 Trw Inc. Low noise-low distortion hemt low noise amplifier (LNA) with monolithic tunable HBT active feedback
US5837589A (en) * 1996-12-27 1998-11-17 Raytheon Company Method for making heterojunction bipolar mixer circuitry
FR2761811B1 (fr) * 1997-04-03 1999-07-16 France Telecom Technologie sans gravure pour integration de composants
US5920773A (en) * 1997-06-16 1999-07-06 Hughes Electronics Corporation Method for making integrated heterojunction bipolar/high electron mobility transistor
KR20010079856A (ko) * 1998-09-18 2001-08-22 후지 하루노스케 반도체 수광소자
US6580139B1 (en) * 2000-07-20 2003-06-17 Emcore Corporation Monolithically integrated sensing device and method of manufacture
JP2002277656A (ja) * 2001-03-19 2002-09-25 Pioneer Electronic Corp 光集積回路およびその製造方法
US20080121866A1 (en) * 2006-11-27 2008-05-29 Ping Yuan Avalanche photodiode detector
JP2010518622A (ja) * 2007-02-07 2010-05-27 マイクロリンク デバイセズ， インク． Ｈｂｔと電界効果トランジスタとの統合
US9006707B2 (en) * 2007-02-28 2015-04-14 Intel Corporation Forming arsenide-based complementary logic on a single substrate
US8076188B2 (en) * 2009-09-28 2011-12-13 New Japan Radio Co., Ltd. Method of manufacturing a semiconductor device
US8470652B1 (en) 2011-05-11 2013-06-25 Hrl Laboratories, Llc Monolithic integration of group III nitride enhancement layers
TW201301481A (zh) * 2011-06-23 2013-01-01 Kopin Corp 雙極高電子遷移率電晶體及其形成方法
CN108417662B (zh) * 2018-05-10 2023-06-09 广东省半导体产业技术研究院 一种自带信号放大功能氮化镓基射线探测器及其制备方法
CN108878369A (zh) * 2018-06-12 2018-11-23 北京工业大学 一种基于外延生长的化合物半导体器件及其制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4396443A (en) * 1982-01-18 1983-08-02 Bell Telephone Laboratories, Incorporated Reduction of leakage current in InGaAs diodes
JPS6118169A (ja) * 1984-07-04 1986-01-27 Hitachi Ltd 半導体装置の製造方法
JPS61187363A (ja) * 1985-02-15 1986-08-21 Fujitsu Ltd 光集積回路装置
DE3712864C2 (de) * 1986-09-01 2001-05-17 Daimler Chrysler Ag Monolithisch integrierter Photoempfänger
US4868633A (en) * 1986-10-22 1989-09-19 Texas Instruments Incorporated Selective epitaxy devices and method
JPS63227053A (ja) * 1987-03-17 1988-09-21 Matsushita Electric Ind Co Ltd 半導体受光素子
FR2623664B1 (fr) * 1987-11-20 1990-03-09 Labo Electronique Physique Procede de realisation d'un photodetecteur infrarouge integre
US4800262A (en) * 1987-12-31 1989-01-24 American Telephone And Telegraph Company, At&T Bell Laboratories Tri-state optical device with quantum well absorption
US4996163A (en) * 1988-02-29 1991-02-26 Sumitomo Electric Industries, Ltd. Method for producing an opto-electronic integrated circuit

Also Published As

Publication number Publication date
EP0392480A2 (de) 1990-10-17
EP0392480A3 (de) 1990-12-27
CA2014399C (en) 1993-02-23
DE69030129T2 (de) 1997-10-09
EP0392480B1 (de) 1997-03-12
CA2014399A1 (en) 1990-10-12
KR930009595B1 (ko) 1993-10-07
US5051372A (en) 1991-09-24
KR900017194A (ko) 1990-11-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee