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DE68909748D1 - Integriertes Schaltungsgerät auf Halbleiterscheibenskala. - Google Patents

Integriertes Schaltungsgerät auf Halbleiterscheibenskala.

Info

Publication number
DE68909748D1
DE68909748D1 DE89306855T DE68909748T DE68909748D1 DE 68909748 D1 DE68909748 D1 DE 68909748D1 DE 89306855 T DE89306855 T DE 89306855T DE 68909748 T DE68909748 T DE 68909748T DE 68909748 D1 DE68909748 D1 DE 68909748D1
Authority
DE
Germany
Prior art keywords
integrated circuit
semiconductor wafer
circuit device
wafer scale
scale
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89306855T
Other languages
English (en)
Other versions
DE68909748T2 (de
Inventor
Joe Earl Brewer
John J Buckley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of DE68909748D1 publication Critical patent/DE68909748D1/de
Application granted granted Critical
Publication of DE68909748T2 publication Critical patent/DE68909748T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90Masterslice integrated circuits
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202Integrated devices comprising a common active layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06589Thermal management, e.g. cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE89306855T 1988-11-08 1989-07-06 Integriertes Schaltungsgerät auf Halbleiterscheibenskala. Expired - Fee Related DE68909748T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/268,909 US5038201A (en) 1988-11-08 1988-11-08 Wafer scale integrated circuit apparatus

Publications (2)

Publication Number Publication Date
DE68909748D1 true DE68909748D1 (de) 1993-11-11
DE68909748T2 DE68909748T2 (de) 1994-02-03

Family

ID=23025034

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89306855T Expired - Fee Related DE68909748T2 (de) 1988-11-08 1989-07-06 Integriertes Schaltungsgerät auf Halbleiterscheibenskala.

Country Status (5)

Country Link
US (1) US5038201A (de)
EP (1) EP0370598B1 (de)
JP (1) JPH02151058A (de)
KR (1) KR900008667A (de)
DE (1) DE68909748T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523260A (en) * 1993-08-02 1996-06-04 Motorola, Inc. Method for heatsinking a controlled collapse chip connection device
IL108359A (en) * 1994-01-17 2001-04-30 Shellcase Ltd Method and device for creating integrated circular devices
USD976242S1 (en) 2019-06-03 2023-01-24 Space Exploration Technologies Corp. Antenna apparatus
USD971192S1 (en) 2019-06-03 2022-11-29 Space Exploration Technologies Corp. Antenna apparatus
USD971900S1 (en) 2019-06-03 2022-12-06 Space Exploration Technologies Corp. Antenna apparatus
USD962206S1 (en) * 2020-01-09 2022-08-30 Space Exploration Technologies Corp. Antenna apparatus

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3908155A (en) * 1974-04-19 1975-09-23 Ibm Wafer circuit package
GB1514595A (en) * 1975-03-03 1978-06-14 Hughes Aircraft Co Package for hermetically sealing electronic circuits
US4379608A (en) * 1981-03-11 1983-04-12 Amp Incorporated Flat cable to planar circuit connector
US4416497A (en) * 1981-07-27 1983-11-22 Sperry Corporation Spring clip electrical connector for strip conductor cable
JPS61111561A (ja) * 1984-10-05 1986-05-29 Fujitsu Ltd 半導体装置
JPS61288455A (ja) * 1985-06-17 1986-12-18 Fujitsu Ltd 多層半導体装置の製造方法
JP2559700B2 (ja) * 1986-03-18 1996-12-04 富士通株式会社 半導体装置の製造方法
US4715115A (en) * 1986-04-03 1987-12-29 Hewlett-Packard Company Package for water-scale semiconductor devices
US4709300A (en) * 1986-05-05 1987-11-24 Itt Gallium Arsenide Technology Center, A Division Of Itt Corporation Jumper for a semiconductor assembly
US4788627A (en) * 1986-06-06 1988-11-29 Tektronix, Inc. Heat sink device using composite metal alloy
US4867235A (en) * 1986-10-20 1989-09-19 Westinghouse Electric Corp. Composite heat transfer means
US4798541A (en) * 1987-09-02 1989-01-17 Ncr Corporation Right angle electrical connector
US4899208A (en) * 1987-12-17 1990-02-06 International Business Machines Corporation Power distribution for full wafer package
US4911643A (en) * 1988-10-11 1990-03-27 Beta Phase, Inc. High density and high signal integrity connector

Also Published As

Publication number Publication date
JPH02151058A (ja) 1990-06-11
EP0370598A1 (de) 1990-05-30
US5038201A (en) 1991-08-06
DE68909748T2 (de) 1994-02-03
KR900008667A (ko) 1990-06-04
EP0370598B1 (de) 1993-10-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee