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DE60315169D1 - Optisches mikrosystem und herstellungsverfahren - Google Patents

Optisches mikrosystem und herstellungsverfahren

Info

Publication number
DE60315169D1
DE60315169D1 DE60315169T DE60315169T DE60315169D1 DE 60315169 D1 DE60315169 D1 DE 60315169D1 DE 60315169 T DE60315169 T DE 60315169T DE 60315169 T DE60315169 T DE 60315169T DE 60315169 D1 DE60315169 D1 DE 60315169D1
Authority
DE
Germany
Prior art keywords
manufacturing process
optical microsystem
microsystem
optical
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60315169T
Other languages
English (en)
Other versions
DE60315169T2 (de
Inventor
Philippe Rommeveaux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne e2v Semiconductors SAS
Original Assignee
e2v Semiconductors SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by e2v Semiconductors SAS filed Critical e2v Semiconductors SAS
Publication of DE60315169D1 publication Critical patent/DE60315169D1/de
Application granted granted Critical
Publication of DE60315169T2 publication Critical patent/DE60315169T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE60315169T 2002-09-03 2003-09-02 Optisches mikrosystem und herstellungsverfahren Expired - Lifetime DE60315169T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0210899 2002-09-03
FR0210899A FR2844098B1 (fr) 2002-09-03 2002-09-03 Microsysteme optique et procede de fabrication
PCT/FR2003/002629 WO2004023166A2 (fr) 2002-09-03 2003-09-02 Microsystem optique et procede de fabrication

Publications (2)

Publication Number Publication Date
DE60315169D1 true DE60315169D1 (de) 2007-09-06
DE60315169T2 DE60315169T2 (de) 2008-04-24

Family

ID=31503079

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60315169T Expired - Lifetime DE60315169T2 (de) 2002-09-03 2003-09-02 Optisches mikrosystem und herstellungsverfahren

Country Status (9)

Country Link
US (2) US7407825B2 (de)
EP (1) EP1543355B1 (de)
JP (1) JP2006501641A (de)
CN (1) CN1689163A (de)
AU (1) AU2003278245A1 (de)
CA (1) CA2497482A1 (de)
DE (1) DE60315169T2 (de)
FR (1) FR2844098B1 (de)
WO (1) WO2004023166A2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2844098B1 (fr) * 2002-09-03 2004-11-19 Atmel Grenoble Sa Microsysteme optique et procede de fabrication
JP4947256B2 (ja) * 2004-09-28 2012-06-06 大日本印刷株式会社 固体撮像装置およびその製造方法
JP2006128647A (ja) * 2004-09-28 2006-05-18 Dainippon Printing Co Ltd センサーチップおよびその製造方法
JP2006339189A (ja) * 2005-05-31 2006-12-14 Oki Electric Ind Co Ltd 半導体ウェハおよびそれにより形成した半導体装置
US20080181558A1 (en) * 2007-01-31 2008-07-31 Hartwell Peter G Electronic and optical circuit integration through wafer bonding
JP5123575B2 (ja) * 2007-06-14 2013-01-23 株式会社フジクラ 配線基板及びその製造方法
DE102007041892A1 (de) * 2007-09-04 2009-03-05 Robert Bosch Gmbh Elektrische Schaltanordnung mit einem MID-Schaltungsträger und einer damit verbundenen Verbindungsschnittstelle
JP5528000B2 (ja) * 2009-04-06 2014-06-25 キヤノン株式会社 半導体装置の製造方法
WO2010116694A2 (en) 2009-04-06 2010-10-14 Canon Kabushiki Kaisha Method of manufacturing semiconductor device
JP5261528B2 (ja) * 2011-04-01 2013-08-14 本田技研工業株式会社 車両用バンパ取付構造
WO2012148809A1 (en) * 2011-04-29 2012-11-01 Nestec S.A. Methods for increasing the palatability of food compositions
CN112802864A (zh) * 2021-02-07 2021-05-14 长春长光圆辰微电子技术有限公司 一种背照式图像传感器焊盘打开的方法
CN117191881B (zh) * 2023-10-24 2024-04-16 莱芜职业技术学院 用于书籍的光电同步检测芯片及方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4050786A (en) * 1971-08-31 1977-09-27 Transparent Conductors, Inc. Liquid crystal display device having particulate spacers in liquid crystal area and method of fabrication
JPS61217018A (ja) * 1985-03-23 1986-09-26 Sharp Corp 液晶表示素子の製造方法
JPS61255063A (ja) * 1985-05-08 1986-11-12 Matsushita Electric Ind Co Ltd 焦電型赤外線撮像素子
US4956687A (en) * 1986-06-26 1990-09-11 Santa Barbara Research Center Backside contact blocked impurity band detector
JP3055370B2 (ja) * 1993-08-31 2000-06-26 松下電器産業株式会社 フレキシブル液晶表示パネルの製造方法
US6091194A (en) * 1995-11-22 2000-07-18 Motorola, Inc. Active matrix display
US6051867A (en) * 1999-05-06 2000-04-18 Hewlett-Packard Company Interlayer dielectric for passivation of an elevated integrated circuit sensor structure
US6229191B1 (en) * 1999-11-19 2001-05-08 Agilent Technologies, Inc. Conductive guard rings for elevated active pixel sensors
US6396118B1 (en) * 2000-02-03 2002-05-28 Agilent Technologies, Inc. Conductive mesh bias connection for an array of elevated active pixel sensors
JP3880278B2 (ja) * 2000-03-10 2007-02-14 オリンパス株式会社 固体撮像装置及びその製造方法
JP2002094082A (ja) * 2000-07-11 2002-03-29 Seiko Epson Corp 光素子及びその製造方法並びに電子機器
JP2002231920A (ja) * 2001-02-06 2002-08-16 Olympus Optical Co Ltd 固体撮像装置及びその製造方法
FR2829292B1 (fr) * 2001-08-31 2004-09-10 Atmel Grenoble Sa Procede de fabrication de capteur d'image couleur avec substrat de support soude plot sur plot
TW560020B (en) * 2002-04-15 2003-11-01 Advanced Semiconductor Eng A wafer-level package with a cavity and fabricating method thereof
TW574537B (en) * 2002-05-17 2004-02-01 Advanced Semiconductor Eng Liquid crystal display device with bump and method for manufacturing the same
FR2844098B1 (fr) * 2002-09-03 2004-11-19 Atmel Grenoble Sa Microsysteme optique et procede de fabrication
JP2005109221A (ja) * 2003-09-30 2005-04-21 Toshiba Corp ウェーハレベルパッケージ及びその製造方法
TWI284399B (en) * 2005-06-30 2007-07-21 Advanced Semiconductor Eng Chip package process

Also Published As

Publication number Publication date
AU2003278245A1 (en) 2004-03-29
JP2006501641A (ja) 2006-01-12
FR2844098A1 (fr) 2004-03-05
CN1689163A (zh) 2005-10-26
EP1543355A2 (de) 2005-06-22
WO2004023166A3 (fr) 2004-05-13
WO2004023166A2 (fr) 2004-03-18
EP1543355B1 (de) 2007-07-25
AU2003278245A8 (en) 2004-03-29
US7737518B2 (en) 2010-06-15
US7407825B2 (en) 2008-08-05
CA2497482A1 (fr) 2004-03-18
DE60315169T2 (de) 2008-04-24
US20080151131A1 (en) 2008-06-26
FR2844098B1 (fr) 2004-11-19
US20050287690A1 (en) 2005-12-29

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Legal Events

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